JP4959568B2 - 不動態化された金属層を形成する方法及びシステム - Google Patents
不動態化された金属層を形成する方法及びシステム Download PDFInfo
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- JP4959568B2 JP4959568B2 JP2007534678A JP2007534678A JP4959568B2 JP 4959568 B2 JP4959568 B2 JP 4959568B2 JP 2007534678 A JP2007534678 A JP 2007534678A JP 2007534678 A JP2007534678 A JP 2007534678A JP 4959568 B2 JP4959568 B2 JP 4959568B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 213
- 239000002184 metal Substances 0.000 title claims description 213
- 238000000034 method Methods 0.000 title claims description 57
- 239000007789 gas Substances 0.000 claims description 117
- 238000012545 processing Methods 0.000 claims description 99
- 239000000758 substrate Substances 0.000 claims description 77
- 239000002243 precursor Substances 0.000 claims description 73
- 238000002161 passivation Methods 0.000 claims description 67
- 229910052702 rhenium Inorganic materials 0.000 claims description 43
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 229910052760 oxygen Inorganic materials 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- 229910052799 carbon Inorganic materials 0.000 claims description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 21
- 238000007740 vapor deposition Methods 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 229910052721 tungsten Inorganic materials 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- ZIZHEHXAMPQGEK-UHFFFAOYSA-N dirhenium decacarbonyl Chemical group [Re].[Re].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] ZIZHEHXAMPQGEK-UHFFFAOYSA-N 0.000 claims 6
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 claims 1
- 229910003449 rhenium oxide Inorganic materials 0.000 claims 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 1
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 38
- 238000004891 communication Methods 0.000 description 18
- 239000012159 carrier gas Substances 0.000 description 15
- 239000006227 byproduct Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 230000024121 nodulation Effects 0.000 description 9
- 239000012080 ambient air Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 6
- 238000010790 dilution Methods 0.000 description 6
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- 239000002826 coolant Substances 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
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- 230000004888 barrier function Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
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- 229910052703 rhodium Inorganic materials 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
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- 238000009792 diffusion process Methods 0.000 description 2
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- 238000004377 microelectronic Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910052762 osmium Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011819 refractory material Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000010952 in-situ formation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SJLOMQIUPFZJAN-UHFFFAOYSA-N oxorhodium Chemical compound [Rh]=O SJLOMQIUPFZJAN-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910003450 rhodium oxide Inorganic materials 0.000 description 1
- 238000013515 script Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- Chemical Vapour Deposition (AREA)
Description
Claims (16)
- 集積回路のゲート積層体に不動態化された金属層を形成する方法であって:
酸化物、窒化物、又は酸窒化物の界面層上に形成された高誘電率誘電体層を含む半導体基板を、処理システムの処理チャンバー内に設置する工程;
熱化学的気相堆積法にて前記高誘電率誘電体層上にレニウム金属層を堆積するために、レニウム−カルボニル前駆体を含有する処理ガスに前記基板を晒す工程;及び
前記レニウム金属層の表面でのレニウム含有ノジュールの酸素誘起成長を抑制するのに有効なシリコン含有パッシベーション層、又は炭素含有パッシベーション層を前記レニウム金属層上に形成する工程;
を有する方法。 - 不動態化された金属層を形成する方法であって:
処理システムの処理チャンバー内に基板を設置する工程;
熱化学的気相堆積法にて前記基板上にレニウム金属層を堆積するために、レニウム−カルボニル前駆体を含有する処理ガスに前記基板を晒す工程;及び
シリコン、炭素、酸素若しくはホウ素、又はこれらの2つ以上の組み合わせを含有するガスに前記レニウム金属層を晒し、且つそれぞれシリコン、炭素、酸素又はホウ素を前記レニウム金属層の少なくとも表面部分に拡散させて、前記表面部分を、前記レニウム金属層の表面でのレニウム含有ノジュールの酸素誘起成長を抑制するのに有効な、それぞれレニウムケイ化物、レニウム炭化物、レニウム酸化物又はレニウムホウ化物のパッシベーション層に変化させるために、前記基板をアニールする工程;
を有する方法。 - 前記ガスはSiH4、Si2H6、SiCl2H2、Si2Cl6、CH4、C2H6、C2H4、C2H2、C3H6、C2H5OH、CH3CH2CH2OH、CH3COCH3、C4H8O、O2、BH4若しくはB2H6、又はこれらの2つ以上の組み合わせを有する、請求項2に記載の方法。
- 不動態化された金属層を形成する方法であって:
処理システムの処理チャンバー内に基板を設置する工程;
熱化学的気相堆積法にて前記基板上にレニウム金属層を堆積するために、レニウム−カルボニル前駆体を含有する処理ガスに前記基板を晒す工程;及び
金属−カルボニル前駆体ガス、及びシリコン含有ガス、炭素含有ガス、酸素含有ガス若しくはホウ素含有ガス又はこれらの2つ以上の組み合わせに前記レニウム金属層を晒すことによって前記レニウム金属層上にパッシベーション層を形成する工程であり、前記パッシベーション層は、金属ケイ化物層、金属炭化物層、金属酸化物層若しくは金属ホウ化物層、又はこれらの組み合わせの少なくとも1つであり、且つ前記レニウム金属層の表面でのレニウム含有ノジュールの酸素誘起成長を抑制するのに有効である形成工程;
を有する方法。 - 前記金属−カルボニル前駆体はW(CO)6、Ru3(CO)12、Ni(CO)4、Mo(CO)6、Co2(CO)8、Rh4(CO)12、Re2(CO)10、Os3(CO)12若しくはCr(CO)6、又はこれらの2つ以上の組み合わせを有し、前記シリコン含有ガスはSiH4、Si2H6、SiCl2H2若しくはSi2Cl6、又はこれらの2つ以上の組み合わせを有し、前記炭素含有ガスはCH4、C2H6、C2H4、C2H2、C3H6、C2H5OH、CH3CH2CH2OH、CH3COCH3若しくはC4H8O、又はこれらの2つ以上の組み合わせを有し、前記酸素含有ガスはO2を有し、前記ホウ素含有ガスはBH4若しくはB2H6、又はこれらの双方を有する、請求項4に記載の方法。
- シリコン又は炭素を前記レニウム金属層の少なくとも表面部分に拡散させて、前記表面部分をレニウムケイ化物又はレニウム炭化物のパッシベーション層に変化させるために、前記シリコン含有パッシベーション層又は前記炭素含有パッシベーション層をアニールする工程を更に有する請求項1に記載の方法。
- 前記レニウム金属層及び前記パッシベーション層が同一処理システム内で形成される、請求項1に記載の方法。
- 前記レニウム金属層及び前記パッシベーション層が相異なる処理システム内で形成される、請求項1に記載の方法。
- 不動態化されたレニウム層を形成する方法であって:
処理システムの処理チャンバー内に基板を設置する工程;
化学的気相堆積法にて前記基板上にレニウム層を堆積するために、レニウムカルボニル前駆体を含有する処理ガスに前記基板を晒す工程;
前記レニウム層上にタングステンパッシベーション層を形成する工程;及び
前記タングステンパッシベーション層上にシリコンパッシベーション層を形成する工程であり、前記タングステンパッシベーション層及びシリコンパッシベーション層は、前記レニウム層の表面でのレニウム含有ノジュールの酸素誘起成長を抑制するのに有効である形成工程;
を有する方法。 - 前記タングステンパッシベーション層は、前記レニウム層をW(CO)6に晒すことによって化学的気相堆積法にて形成される、請求項9に記載の方法。
- 前記シリコンパッシベーション層は、前記タングステンパッシベーション層をSiH4、Si2H6、SiCl2H2若しくはSi2Cl6、又はこれらの2つ以上の組み合わせに晒すことによって化学的気相堆積法にて形成される、請求項9に記載の方法。
- 前記レニウム層、並びに前記タングステンパッシベーション層及び前記シリコンパッシベーション層が同一処理システム内で形成される、請求項9に記載の方法。
- 前記レニウム層、並びに前記タングステンパッシベーション層及び前記シリコンパッシベーション層が相異なる処理システム内で形成される、請求項9に記載の方法。
- 前記レニウムカルボニル前駆体はRe 2 (CO) 10 を有する、請求項9に記載の方法。
- 前記タングステンパッシベーション層及び前記シリコンパッシベーション層の少なくとも一部をタングステンケイ化物パッシベーション層に変化させるために、前記基板をアニールする工程を更に有する請求項9に記載の方法。
- 不動態化された金属層を形成する方法であって:
処理システムの処理チャンバー内に基板を設置する工程;
熱化学的気相堆積法にて前記基板上にレニウム金属層を堆積するために、レニウムカルボニル前駆体を含有する処理ガスに前記基板を晒す工程;及び
前記レニウム金属層上にパッシベーション層を形成する工程であって:
第1に、前記レニウム金属層上に金属層を形成し、
第2に、シリコン含有ガス、炭素含有ガス、窒素含有ガス、酸素含有ガス若しくはホウ素含有ガス、又はこれらの2つ以上の組み合わせに前記金属層を晒し、且つ
第3に、シリコン、炭素、窒素、酸素及び/又はホウ素を前記金属層に拡散させて、前記金属層を金属ケイ化物、金属炭化物、金属窒化物、金属酸化物及び/又は金属ホウ化物に変化させる、
ことによる形成工程;
を有し、
前記パッシベーション層は、前記レニウム金属層の表面でのレニウム含有ノジュールの酸素誘起成長を抑制するのに有効である、方法。
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CN101032000A (zh) | 2007-09-05 |
WO2006039219A1 (en) | 2006-04-13 |
CN100481334C (zh) | 2009-04-22 |
JP2008515234A (ja) | 2008-05-08 |
KR20070058497A (ko) | 2007-06-08 |
KR101178663B1 (ko) | 2012-08-30 |
US7189431B2 (en) | 2007-03-13 |
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