JP4865361B2 - ドライエッチング方法 - Google Patents

ドライエッチング方法 Download PDF

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Publication number
JP4865361B2
JP4865361B2 JP2006054914A JP2006054914A JP4865361B2 JP 4865361 B2 JP4865361 B2 JP 4865361B2 JP 2006054914 A JP2006054914 A JP 2006054914A JP 2006054914 A JP2006054914 A JP 2006054914A JP 4865361 B2 JP4865361 B2 JP 4865361B2
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JP
Japan
Prior art keywords
gas
etched
etching
dry etching
mask pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006054914A
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English (en)
Japanese (ja)
Other versions
JP2007234870A (ja
JP2007234870A5 (OSRAM
Inventor
聡 宇根
正道 坂口
謙一 桑原
朋祥 市丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2006054914A priority Critical patent/JP4865361B2/ja
Priority to US11/505,292 priority patent/US20070207618A1/en
Priority to KR1020060078748A priority patent/KR100894300B1/ko
Priority to TW095131155A priority patent/TW200735208A/zh
Publication of JP2007234870A publication Critical patent/JP2007234870A/ja
Publication of JP2007234870A5 publication Critical patent/JP2007234870A5/ja
Priority to US12/435,787 priority patent/US8143175B2/en
Application granted granted Critical
Publication of JP4865361B2 publication Critical patent/JP4865361B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006054914A 2006-03-01 2006-03-01 ドライエッチング方法 Expired - Fee Related JP4865361B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2006054914A JP4865361B2 (ja) 2006-03-01 2006-03-01 ドライエッチング方法
US11/505,292 US20070207618A1 (en) 2006-03-01 2006-08-17 Dry etching method
KR1020060078748A KR100894300B1 (ko) 2006-03-01 2006-08-21 드라이에칭방법
TW095131155A TW200735208A (en) 2006-03-01 2006-08-24 Dry etching method
US12/435,787 US8143175B2 (en) 2006-03-01 2009-05-05 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006054914A JP4865361B2 (ja) 2006-03-01 2006-03-01 ドライエッチング方法

Publications (3)

Publication Number Publication Date
JP2007234870A JP2007234870A (ja) 2007-09-13
JP2007234870A5 JP2007234870A5 (OSRAM) 2009-02-19
JP4865361B2 true JP4865361B2 (ja) 2012-02-01

Family

ID=38471971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006054914A Expired - Fee Related JP4865361B2 (ja) 2006-03-01 2006-03-01 ドライエッチング方法

Country Status (4)

Country Link
US (2) US20070207618A1 (OSRAM)
JP (1) JP4865361B2 (OSRAM)
KR (1) KR100894300B1 (OSRAM)
TW (1) TW200735208A (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013258244A (ja) * 2012-06-12 2013-12-26 Tokyo Electron Ltd エッチング方法及びプラズマ処理装置
JP2014003085A (ja) * 2012-06-15 2014-01-09 Tokyo Electron Ltd プラズマエッチング方法及びプラズマ処理装置
CN104425228B (zh) * 2013-08-28 2017-06-16 中芯国际集成电路制造(上海)有限公司 多晶硅栅极的形成方法
JP7478059B2 (ja) * 2020-08-05 2024-05-02 株式会社アルバック シリコンのドライエッチング方法
KR20250019607A (ko) 2023-07-31 2025-02-10 주식회사 히타치하이테크 플라스마 처리 방법

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100421A (en) * 1980-01-17 1981-08-12 Toshiba Corp Plasma etching method
JPS56144542A (en) * 1980-03-17 1981-11-10 Ibm Method of selectively reactively ion etching polycrystalline silicon for monocrsytalline silicon
EP0338102B1 (de) 1988-04-19 1993-03-10 International Business Machines Corporation Verfahren zur Herstellung von integrierten Halbleiterstrukturen welche Feldeffekttransistoren mit Kanallängen im Submikrometerbereich enthalten
JPH07263415A (ja) 1994-03-18 1995-10-13 Fujitsu Ltd 半導体装置の製造方法
JP3438313B2 (ja) * 1994-05-12 2003-08-18 富士通株式会社 パターン形成方法
KR100434133B1 (ko) 1995-07-14 2004-08-09 텍사스 인스트루먼츠 인코포레이티드 중간층리쏘그래피
JP2935346B2 (ja) * 1996-07-30 1999-08-16 日本電気株式会社 半導体装置およびその製造方法
US5818110A (en) * 1996-11-22 1998-10-06 International Business Machines Corporation Integrated circuit chip wiring structure with crossover capability and method of manufacturing the same
KR100291585B1 (ko) 1997-07-25 2001-11-30 윤종용 반도체장치의금속막식각방법
KR20010003257A (ko) 1999-06-22 2001-01-15 김영환 반도체소자의 제조방법
JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
TW452971B (en) 1999-12-28 2001-09-01 Promos Technologies Inc Manufacturing method of bottle-shaped deep trench
KR20010083476A (ko) 2000-02-15 2001-09-01 박종섭 미세패턴 형성방법
JP2002151470A (ja) * 2000-11-09 2002-05-24 Mitsubishi Electric Corp ハードマスクの形成方法および半導体装置の製造方法
JP2002343798A (ja) * 2001-05-18 2002-11-29 Mitsubishi Electric Corp 配線層のドライエッチング方法、半導体装置の製造方法および該方法によって得られた半導体装置
JP4257051B2 (ja) * 2001-08-10 2009-04-22 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2003163349A (ja) * 2001-11-28 2003-06-06 Mitsubishi Electric Corp 半導体装置の製造方法
US6900139B1 (en) 2002-04-30 2005-05-31 Advanced Micro Devices, Inc. Method for photoresist trim endpoint detection
US6762130B2 (en) 2002-05-31 2004-07-13 Texas Instruments Incorporated Method of photolithographically forming extremely narrow transistor gate elements
KR200291154Y1 (ko) * 2002-07-09 2002-10-11 박성준 전기ㆍ전자기기의 전선 정리용 기구

Also Published As

Publication number Publication date
KR20070090063A (ko) 2007-09-05
KR100894300B1 (ko) 2009-04-24
TW200735208A (en) 2007-09-16
US8143175B2 (en) 2012-03-27
US20070207618A1 (en) 2007-09-06
US20090280651A1 (en) 2009-11-12
JP2007234870A (ja) 2007-09-13
TWI334174B (OSRAM) 2010-12-01

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