JP2007234870A5 - - Google Patents
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- Publication number
- JP2007234870A5 JP2007234870A5 JP2006054914A JP2006054914A JP2007234870A5 JP 2007234870 A5 JP2007234870 A5 JP 2007234870A5 JP 2006054914 A JP2006054914 A JP 2006054914A JP 2006054914 A JP2006054914 A JP 2006054914A JP 2007234870 A5 JP2007234870 A5 JP 2007234870A5
- Authority
- JP
- Japan
- Prior art keywords
- dry etching
- etched
- gas
- etching method
- mask pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims 17
- 238000001312 dry etching Methods 0.000 claims 14
- 238000000034 method Methods 0.000 claims 12
- 239000000463 material Substances 0.000 claims 9
- 238000005530 etching Methods 0.000 claims 7
- 229910004541 SiN Inorganic materials 0.000 claims 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 6
- 229920002120 photoresistant polymer Polymers 0.000 claims 5
- 238000001020 plasma etching Methods 0.000 claims 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 3
- 229910052731 fluorine Inorganic materials 0.000 claims 3
- 239000011737 fluorine Substances 0.000 claims 3
- 239000000460 chlorine Substances 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229920005591 polysilicon Polymers 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000013077 target material Substances 0.000 claims 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims 2
- 229910021342 tungsten silicide Inorganic materials 0.000 claims 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 1
- 229910052794 bromium Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006054914A JP4865361B2 (ja) | 2006-03-01 | 2006-03-01 | ドライエッチング方法 |
| US11/505,292 US20070207618A1 (en) | 2006-03-01 | 2006-08-17 | Dry etching method |
| KR1020060078748A KR100894300B1 (ko) | 2006-03-01 | 2006-08-21 | 드라이에칭방법 |
| TW095131155A TW200735208A (en) | 2006-03-01 | 2006-08-24 | Dry etching method |
| US12/435,787 US8143175B2 (en) | 2006-03-01 | 2009-05-05 | Dry etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006054914A JP4865361B2 (ja) | 2006-03-01 | 2006-03-01 | ドライエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007234870A JP2007234870A (ja) | 2007-09-13 |
| JP2007234870A5 true JP2007234870A5 (OSRAM) | 2009-02-19 |
| JP4865361B2 JP4865361B2 (ja) | 2012-02-01 |
Family
ID=38471971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006054914A Expired - Fee Related JP4865361B2 (ja) | 2006-03-01 | 2006-03-01 | ドライエッチング方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20070207618A1 (OSRAM) |
| JP (1) | JP4865361B2 (OSRAM) |
| KR (1) | KR100894300B1 (OSRAM) |
| TW (1) | TW200735208A (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013258244A (ja) | 2012-06-12 | 2013-12-26 | Tokyo Electron Ltd | エッチング方法及びプラズマ処理装置 |
| JP2014003085A (ja) * | 2012-06-15 | 2014-01-09 | Tokyo Electron Ltd | プラズマエッチング方法及びプラズマ処理装置 |
| CN104425228B (zh) * | 2013-08-28 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | 多晶硅栅极的形成方法 |
| JP7478059B2 (ja) * | 2020-08-05 | 2024-05-02 | 株式会社アルバック | シリコンのドライエッチング方法 |
| JPWO2025027769A1 (OSRAM) | 2023-07-31 | 2025-02-06 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56100421A (en) * | 1980-01-17 | 1981-08-12 | Toshiba Corp | Plasma etching method |
| JPS56144542A (en) * | 1980-03-17 | 1981-11-10 | Ibm | Method of selectively reactively ion etching polycrystalline silicon for monocrsytalline silicon |
| DE3879186D1 (de) | 1988-04-19 | 1993-04-15 | Ibm | Verfahren zur herstellung von integrierten halbleiterstrukturen welche feldeffekttransistoren mit kanallaengen im submikrometerbereich enthalten. |
| JPH07263415A (ja) | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP3438313B2 (ja) * | 1994-05-12 | 2003-08-18 | 富士通株式会社 | パターン形成方法 |
| KR100434133B1 (ko) | 1995-07-14 | 2004-08-09 | 텍사스 인스트루먼츠 인코포레이티드 | 중간층리쏘그래피 |
| JP2935346B2 (ja) * | 1996-07-30 | 1999-08-16 | 日本電気株式会社 | 半導体装置およびその製造方法 |
| US5818110A (en) * | 1996-11-22 | 1998-10-06 | International Business Machines Corporation | Integrated circuit chip wiring structure with crossover capability and method of manufacturing the same |
| KR100291585B1 (ko) | 1997-07-25 | 2001-11-30 | 윤종용 | 반도체장치의금속막식각방법 |
| KR20010003257A (ko) | 1999-06-22 | 2001-01-15 | 김영환 | 반도체소자의 제조방법 |
| JP2001035808A (ja) * | 1999-07-22 | 2001-02-09 | Semiconductor Energy Lab Co Ltd | 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法 |
| TW452971B (en) | 1999-12-28 | 2001-09-01 | Promos Technologies Inc | Manufacturing method of bottle-shaped deep trench |
| KR20010083476A (ko) | 2000-02-15 | 2001-09-01 | 박종섭 | 미세패턴 형성방법 |
| JP2002151470A (ja) * | 2000-11-09 | 2002-05-24 | Mitsubishi Electric Corp | ハードマスクの形成方法および半導体装置の製造方法 |
| JP2002343798A (ja) * | 2001-05-18 | 2002-11-29 | Mitsubishi Electric Corp | 配線層のドライエッチング方法、半導体装置の製造方法および該方法によって得られた半導体装置 |
| JP4257051B2 (ja) * | 2001-08-10 | 2009-04-22 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JP2003163349A (ja) * | 2001-11-28 | 2003-06-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US6900139B1 (en) | 2002-04-30 | 2005-05-31 | Advanced Micro Devices, Inc. | Method for photoresist trim endpoint detection |
| US6762130B2 (en) | 2002-05-31 | 2004-07-13 | Texas Instruments Incorporated | Method of photolithographically forming extremely narrow transistor gate elements |
| KR200291154Y1 (ko) * | 2002-07-09 | 2002-10-11 | 박성준 | 전기ㆍ전자기기의 전선 정리용 기구 |
-
2006
- 2006-03-01 JP JP2006054914A patent/JP4865361B2/ja not_active Expired - Fee Related
- 2006-08-17 US US11/505,292 patent/US20070207618A1/en not_active Abandoned
- 2006-08-21 KR KR1020060078748A patent/KR100894300B1/ko not_active Expired - Fee Related
- 2006-08-24 TW TW095131155A patent/TW200735208A/zh not_active IP Right Cessation
-
2009
- 2009-05-05 US US12/435,787 patent/US8143175B2/en not_active Expired - Fee Related
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