JP2006108484A5 - - Google Patents

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Publication number
JP2006108484A5
JP2006108484A5 JP2004294882A JP2004294882A JP2006108484A5 JP 2006108484 A5 JP2006108484 A5 JP 2006108484A5 JP 2004294882 A JP2004294882 A JP 2004294882A JP 2004294882 A JP2004294882 A JP 2004294882A JP 2006108484 A5 JP2006108484 A5 JP 2006108484A5
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JP
Japan
Prior art keywords
gas
etching
insulating film
interlayer insulating
fluorocarbon compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004294882A
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English (en)
Japanese (ja)
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JP2006108484A (ja
JP4761502B2 (ja
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Priority to JP2004294882A priority Critical patent/JP4761502B2/ja
Priority claimed from JP2004294882A external-priority patent/JP4761502B2/ja
Publication of JP2006108484A publication Critical patent/JP2006108484A/ja
Publication of JP2006108484A5 publication Critical patent/JP2006108484A5/ja
Application granted granted Critical
Publication of JP4761502B2 publication Critical patent/JP4761502B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004294882A 2004-10-07 2004-10-07 層間絶縁膜のドライエッチング方法 Expired - Fee Related JP4761502B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004294882A JP4761502B2 (ja) 2004-10-07 2004-10-07 層間絶縁膜のドライエッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004294882A JP4761502B2 (ja) 2004-10-07 2004-10-07 層間絶縁膜のドライエッチング方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008182928A Division JP4982443B2 (ja) 2008-07-14 2008-07-14 層間絶縁膜のドライエッチング方法

Publications (3)

Publication Number Publication Date
JP2006108484A JP2006108484A (ja) 2006-04-20
JP2006108484A5 true JP2006108484A5 (OSRAM) 2007-04-26
JP4761502B2 JP4761502B2 (ja) 2011-08-31

Family

ID=36377830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004294882A Expired - Fee Related JP4761502B2 (ja) 2004-10-07 2004-10-07 層間絶縁膜のドライエッチング方法

Country Status (1)

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JP (1) JP4761502B2 (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009193988A (ja) * 2008-02-12 2009-08-27 Tokyo Electron Ltd プラズマエッチング方法及びコンピュータ記憶媒体
JP2012028431A (ja) 2010-07-21 2012-02-09 Toshiba Corp 半導体装置の製造方法
JP5537324B2 (ja) * 2010-08-05 2014-07-02 株式会社東芝 半導体装置の製造方法
US9368363B2 (en) 2011-03-17 2016-06-14 Zeon Corporation Etching gas and etching method
US10607850B2 (en) 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
WO2018225661A1 (ja) * 2017-06-08 2018-12-13 昭和電工株式会社 エッチング方法
CN113614891A (zh) 2019-03-22 2021-11-05 中央硝子株式会社 干蚀刻方法及半导体装置的制造方法
US11798811B2 (en) 2020-06-26 2023-10-24 American Air Liquide, Inc. Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3611729B2 (ja) * 1998-08-26 2005-01-19 セントラル硝子株式会社 エッチングガス
JP3336975B2 (ja) * 1998-03-27 2002-10-21 日本電気株式会社 基板処理方法
WO1999052135A1 (en) * 1998-04-02 1999-10-14 Applied Materials, Inc. Method for etching low k dielectrics
JP3383939B2 (ja) * 2000-01-26 2003-03-10 日本電気株式会社 ドライエッチング方法
JP4839506B2 (ja) * 2000-04-28 2011-12-21 ダイキン工業株式会社 ドライエッチング方法
JP4186045B2 (ja) * 2000-11-08 2008-11-26 ダイキン工業株式会社 ドライエッチングガスおよびドライエッチング方法
JP4568444B2 (ja) * 2001-03-27 2010-10-27 株式会社アルバック 基板上に堆積したポーラスシリカを含有する材料の薄膜のエッチング法
JP4016765B2 (ja) * 2001-08-24 2007-12-05 Ｊｓｒ株式会社 パターン形成方法およびパターン形成用多層膜
JP2004249285A (ja) * 2003-01-29 2004-09-09 Showa Denko Kk フッ素化合物の分解方法
JP3981030B2 (ja) * 2003-03-07 2007-09-26 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
JP4538209B2 (ja) * 2003-08-28 2010-09-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法

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