JP4761502B2 - 層間絶縁膜のドライエッチング方法 - Google Patents
層間絶縁膜のドライエッチング方法 Download PDFInfo
- Publication number
- JP4761502B2 JP4761502B2 JP2004294882A JP2004294882A JP4761502B2 JP 4761502 B2 JP4761502 B2 JP 4761502B2 JP 2004294882 A JP2004294882 A JP 2004294882A JP 2004294882 A JP2004294882 A JP 2004294882A JP 4761502 B2 JP4761502 B2 JP 4761502B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- insulating film
- interlayer insulating
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011229 interlayer Substances 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 25
- 238000001312 dry etching Methods 0.000 title claims description 14
- 239000007789 gas Substances 0.000 claims description 70
- 238000005530 etching Methods 0.000 claims description 69
- 238000000206 photolithography Methods 0.000 claims description 15
- 125000001153 fluoro group Chemical group F* 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims 1
- -1 fluorocarbon compound Chemical class 0.000 description 20
- 229910052794 bromium Inorganic materials 0.000 description 13
- 229910052740 iodine Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 10
- 238000001020 plasma etching Methods 0.000 description 8
- 230000007935 neutral effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 6
- 150000002367 halogens Chemical class 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000002305 electric material Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 241000894007 species Species 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000031709 bromination Effects 0.000 description 1
- 238000005893 bromination reaction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004294882A JP4761502B2 (ja) | 2004-10-07 | 2004-10-07 | 層間絶縁膜のドライエッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004294882A JP4761502B2 (ja) | 2004-10-07 | 2004-10-07 | 層間絶縁膜のドライエッチング方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008182928A Division JP4982443B2 (ja) | 2008-07-14 | 2008-07-14 | 層間絶縁膜のドライエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006108484A JP2006108484A (ja) | 2006-04-20 |
| JP2006108484A5 JP2006108484A5 (OSRAM) | 2007-04-26 |
| JP4761502B2 true JP4761502B2 (ja) | 2011-08-31 |
Family
ID=36377830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004294882A Expired - Fee Related JP4761502B2 (ja) | 2004-10-07 | 2004-10-07 | 層間絶縁膜のドライエッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4761502B2 (OSRAM) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009193988A (ja) * | 2008-02-12 | 2009-08-27 | Tokyo Electron Ltd | プラズマエッチング方法及びコンピュータ記憶媒体 |
| JP2012028431A (ja) | 2010-07-21 | 2012-02-09 | Toshiba Corp | 半導体装置の製造方法 |
| JP5537324B2 (ja) * | 2010-08-05 | 2014-07-02 | 株式会社東芝 | 半導体装置の製造方法 |
| US9368363B2 (en) | 2011-03-17 | 2016-06-14 | Zeon Corporation | Etching gas and etching method |
| US10607850B2 (en) | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
| WO2018225661A1 (ja) * | 2017-06-08 | 2018-12-13 | 昭和電工株式会社 | エッチング方法 |
| CN113614891A (zh) | 2019-03-22 | 2021-11-05 | 中央硝子株式会社 | 干蚀刻方法及半导体装置的制造方法 |
| US11798811B2 (en) | 2020-06-26 | 2023-10-24 | American Air Liquide, Inc. | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3611729B2 (ja) * | 1998-08-26 | 2005-01-19 | セントラル硝子株式会社 | エッチングガス |
| JP3336975B2 (ja) * | 1998-03-27 | 2002-10-21 | 日本電気株式会社 | 基板処理方法 |
| WO1999052135A1 (en) * | 1998-04-02 | 1999-10-14 | Applied Materials, Inc. | Method for etching low k dielectrics |
| JP3383939B2 (ja) * | 2000-01-26 | 2003-03-10 | 日本電気株式会社 | ドライエッチング方法 |
| JP4839506B2 (ja) * | 2000-04-28 | 2011-12-21 | ダイキン工業株式会社 | ドライエッチング方法 |
| JP4186045B2 (ja) * | 2000-11-08 | 2008-11-26 | ダイキン工業株式会社 | ドライエッチングガスおよびドライエッチング方法 |
| JP4568444B2 (ja) * | 2001-03-27 | 2010-10-27 | 株式会社アルバック | 基板上に堆積したポーラスシリカを含有する材料の薄膜のエッチング法 |
| JP4016765B2 (ja) * | 2001-08-24 | 2007-12-05 | Ｊｓｒ株式会社 | パターン形成方法およびパターン形成用多層膜 |
| JP2004249285A (ja) * | 2003-01-29 | 2004-09-09 | Showa Denko Kk | フッ素化合物の分解方法 |
| JP3981030B2 (ja) * | 2003-03-07 | 2007-09-26 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
| JP4538209B2 (ja) * | 2003-08-28 | 2010-09-08 | 株式会社日立ハイテクノロジーズ | 半導体装置の製造方法 |
-
2004
- 2004-10-07 JP JP2004294882A patent/JP4761502B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006108484A (ja) | 2006-04-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102846291B1 (ko) | 루테늄 하드 마스크 공정 | |
| CN1331198C (zh) | 将氨用于刻蚀有机低k电介质 | |
| KR100778260B1 (ko) | 수소로 포토레지스트를 포스트 에칭 박리하기 위한 프로세스 | |
| TWI284370B (en) | Use of hypofluorites, fluoroperoxides, and/or fluorotrioxides as oxidizing agent in fluorocarbon etch plasmas | |
| US20040035825A1 (en) | Dry etching gas and method for dry etching | |
| JP4761502B2 (ja) | 層間絶縁膜のドライエッチング方法 | |
| JP2002313777A (ja) | 集積回路構造を製造する方法 | |
| JP2004505464A (ja) | 半導体構造物から有機残留物を除去する方法 | |
| CN100423182C (zh) | 在等离子体加工系统中蚀刻时减少光致抗蚀剂变形的方法 | |
| US7183220B1 (en) | Plasma etching methods | |
| US20090191715A1 (en) | Method for etching interlayer dielectric film | |
| JP4651956B2 (ja) | 層間絶縁膜のドライエッチング方法 | |
| JP4982443B2 (ja) | 層間絶縁膜のドライエッチング方法 | |
| JP4681217B2 (ja) | 層間絶縁膜のドライエッチング方法 | |
| JP4643916B2 (ja) | 層間絶縁膜のドライエッチング方法及びその装置 | |
| KR100859308B1 (ko) | 층간 절연막의 건식 에칭 방법 | |
| JP4144795B2 (ja) | 低誘電率層間絶縁膜のドライエッチング方法 | |
| JP4889199B2 (ja) | 低誘電率層間絶縁膜のドライエッチング方法 | |
| WO2007105261A1 (ja) | 層間絶縁膜のドライエッチング方法 | |
| TWI343601B (OSRAM) | ||
| JP4071064B2 (ja) | エッチング方法 | |
| JP2004071731A (ja) | エッチング方法 | |
| JP4500029B2 (ja) | 低誘電率層間絶縁膜のドライエッチング方法 | |
| JP4500023B2 (ja) | 層間絶縁膜のドライエッチング方法 | |
| JP4316322B2 (ja) | 層間絶縁膜のドライエッチング方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20061016 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20061016 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061219 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070309 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20070309 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20070323 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070629 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070710 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20070801 |
|
| RD05 | Notification of revocation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7425 Effective date: 20070903 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070910 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070903 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080116 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080314 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080514 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080714 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20080722 |
|
| A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20081003 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20101022 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20101022 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110131 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110414 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110606 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140617 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4761502 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |