JP4761502B2 - 層間絶縁膜のドライエッチング方法 - Google Patents
層間絶縁膜のドライエッチング方法 Download PDFInfo
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- JP4761502B2 JP4761502B2 JP2004294882A JP2004294882A JP4761502B2 JP 4761502 B2 JP4761502 B2 JP 4761502B2 JP 2004294882 A JP2004294882 A JP 2004294882A JP 2004294882 A JP2004294882 A JP 2004294882A JP 4761502 B2 JP4761502 B2 JP 4761502B2
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- etching
- gas
- insulating film
- interlayer insulating
- plasma
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[参考例1]
(比較例1)
11 チャンバ
11a プラズマ発生室
11b 基板電極室
31 レジストマスク
32 エッジ部
33 エッジ荒れ
34 層間絶縁膜
35 ホール、トレンチ
36 ストリエーション
S 処理基板
Claims (2)
- ArFフォトリソグラフィ法を用いて形成したレジストマスクによって覆われたSiO2層間絶縁膜を、エッチングガスとして、C3F7Iガス、Ar及び酸素を導入しつつ、エッチャントのF原子数密度の減少したプラズマ雰囲気中で、レジストマスクのパターニングされた領域のエッジ部の荒れを抑制してドライエッチングし、ストリエーションの発生を抑制しながらホール、トレンチを微細加工することを特徴とする層間絶縁膜のドライエッチング方法。
- 前記酸素が、エッチングガスの総流量に対して3〜15%の範囲の量で添加されることを特徴とする請求項1に記載の層間絶縁膜のドライエッチング方法。
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JP2004294882A JP4761502B2 (ja) | 2004-10-07 | 2004-10-07 | 層間絶縁膜のドライエッチング方法 |
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JP2004294882A JP4761502B2 (ja) | 2004-10-07 | 2004-10-07 | 層間絶縁膜のドライエッチング方法 |
Related Child Applications (1)
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JP2008182928A Division JP4982443B2 (ja) | 2008-07-14 | 2008-07-14 | 層間絶縁膜のドライエッチング方法 |
Publications (3)
Publication Number | Publication Date |
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JP2006108484A JP2006108484A (ja) | 2006-04-20 |
JP2006108484A5 JP2006108484A5 (ja) | 2007-04-26 |
JP4761502B2 true JP4761502B2 (ja) | 2011-08-31 |
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JP2004294882A Active JP4761502B2 (ja) | 2004-10-07 | 2004-10-07 | 層間絶縁膜のドライエッチング方法 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009193988A (ja) * | 2008-02-12 | 2009-08-27 | Tokyo Electron Ltd | プラズマエッチング方法及びコンピュータ記憶媒体 |
JP2012028431A (ja) | 2010-07-21 | 2012-02-09 | Toshiba Corp | 半導体装置の製造方法 |
JP5537324B2 (ja) * | 2010-08-05 | 2014-07-02 | 株式会社東芝 | 半導体装置の製造方法 |
US9368363B2 (en) | 2011-03-17 | 2016-06-14 | Zeon Corporation | Etching gas and etching method |
US10607850B2 (en) | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
CN110546743B (zh) * | 2017-06-08 | 2023-03-24 | 昭和电工株式会社 | 蚀刻方法 |
KR20210136102A (ko) | 2019-03-22 | 2021-11-16 | 샌트랄 글래스 컴퍼니 리미티드 | 드라이 에칭 방법 및 반도체 디바이스의 제조 방법 |
US11798811B2 (en) | 2020-06-26 | 2023-10-24 | American Air Liquide, Inc. | Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3611729B2 (ja) * | 1998-08-26 | 2005-01-19 | セントラル硝子株式会社 | エッチングガス |
JP3336975B2 (ja) * | 1998-03-27 | 2002-10-21 | 日本電気株式会社 | 基板処理方法 |
EP1070346A1 (en) * | 1998-04-02 | 2001-01-24 | Applied Materials, Inc. | Method for etching low k dielectrics |
JP3383939B2 (ja) * | 2000-01-26 | 2003-03-10 | 日本電気株式会社 | ドライエッチング方法 |
JP4839506B2 (ja) * | 2000-04-28 | 2011-12-21 | ダイキン工業株式会社 | ドライエッチング方法 |
US20040035825A1 (en) * | 2000-11-08 | 2004-02-26 | Shingo Nakamura | Dry etching gas and method for dry etching |
JP4568444B2 (ja) * | 2001-03-27 | 2010-10-27 | 株式会社アルバック | 基板上に堆積したポーラスシリカを含有する材料の薄膜のエッチング法 |
JP4016765B2 (ja) * | 2001-08-24 | 2007-12-05 | Jsr株式会社 | パターン形成方法およびパターン形成用多層膜 |
JP2004249285A (ja) * | 2003-01-29 | 2004-09-09 | Showa Denko Kk | フッ素化合物の分解方法 |
JP3981030B2 (ja) * | 2003-03-07 | 2007-09-26 | 信越化学工業株式会社 | レジスト下層膜材料ならびにパターン形成方法 |
JP4538209B2 (ja) * | 2003-08-28 | 2010-09-08 | 株式会社日立ハイテクノロジーズ | 半導体装置の製造方法 |
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