TWI343601B - - Google Patents

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Publication number
TWI343601B
TWI343601B TW95108291A TW95108291A TWI343601B TW I343601 B TWI343601 B TW I343601B TW 95108291 A TW95108291 A TW 95108291A TW 95108291 A TW95108291 A TW 95108291A TW I343601 B TWI343601 B TW I343601B
Authority
TW
Taiwan
Prior art keywords
gas
etching
insulating film
interlayer insulating
hbr
Prior art date
Application number
TW95108291A
Other languages
English (en)
Chinese (zh)
Other versions
TW200735206A (en
Inventor
Toshio Hayashi
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to TW095108291A priority Critical patent/TW200735206A/zh
Publication of TW200735206A publication Critical patent/TW200735206A/zh
Application granted granted Critical
Publication of TWI343601B publication Critical patent/TWI343601B/zh

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  • Drying Of Semiconductors (AREA)
TW095108291A 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device TW200735206A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095108291A TW200735206A (en) 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095108291A TW200735206A (en) 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device

Publications (2)

Publication Number Publication Date
TW200735206A TW200735206A (en) 2007-09-16
TWI343601B true TWI343601B (ja) 2011-06-11

Family

ID=45074892

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095108291A TW200735206A (en) 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device

Country Status (1)

Country Link
TW (1) TW200735206A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10607850B2 (en) 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US11798811B2 (en) 2020-06-26 2023-10-24 American Air Liquide, Inc. Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10607850B2 (en) 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US11430663B2 (en) 2016-12-30 2022-08-30 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
US11798811B2 (en) 2020-06-26 2023-10-24 American Air Liquide, Inc. Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures

Also Published As

Publication number Publication date
TW200735206A (en) 2007-09-16

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