TW200735206A - Method of dry etching of interlayer insulation film and etching device - Google Patents

Method of dry etching of interlayer insulation film and etching device

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Publication number
TW200735206A
TW200735206A TW095108291A TW95108291A TW200735206A TW 200735206 A TW200735206 A TW 200735206A TW 095108291 A TW095108291 A TW 095108291A TW 95108291 A TW95108291 A TW 95108291A TW 200735206 A TW200735206 A TW 200735206A
Authority
TW
Taiwan
Prior art keywords
etching
dry etching
insulation film
interlayer insulation
gas
Prior art date
Application number
TW095108291A
Other languages
Chinese (zh)
Other versions
TWI343601B (en
Inventor
Toshio Hayashi
Original Assignee
Philtech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philtech Inc filed Critical Philtech Inc
Priority to TW095108291A priority Critical patent/TW200735206A/en
Publication of TW200735206A publication Critical patent/TW200735206A/en
Application granted granted Critical
Publication of TWI343601B publication Critical patent/TWI343601B/zh

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Abstract

The object of the present invention is to suppress the occurrence of striation and attain high etching accuracy in carrying out dry etching on an interlayer insulation film covered with a resist mask formed by ArF photolithography. In accordance with the present invention, in the microfabrication of hole and trench through dry etching in a plasma atmosphere, a halogen (F, I, Br) based gas is used as the etching gas, which consists of a gas of fluorinated carbon compound wherein at least one of I and Br is contained in an amount, in terms of atomic composition ratio, of 26% or less based on the total amount of halogens and the rest consists of F.
TW095108291A 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device TW200735206A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095108291A TW200735206A (en) 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095108291A TW200735206A (en) 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device

Publications (2)

Publication Number Publication Date
TW200735206A true TW200735206A (en) 2007-09-16
TWI343601B TWI343601B (en) 2011-06-11

Family

ID=45074892

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095108291A TW200735206A (en) 2006-03-10 2006-03-10 Method of dry etching of interlayer insulation film and etching device

Country Status (1)

Country Link
TW (1) TW200735206A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110178206A (en) * 2016-12-30 2019-08-27 乔治洛德方法研究和开发液化空气有限公司 For etch semiconductor structure containing iodine compound

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11798811B2 (en) 2020-06-26 2023-10-24 American Air Liquide, Inc. Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110178206A (en) * 2016-12-30 2019-08-27 乔治洛德方法研究和开发液化空气有限公司 For etch semiconductor structure containing iodine compound
CN110178206B (en) * 2016-12-30 2023-08-18 乔治洛德方法研究和开发液化空气有限公司 Iodine-containing compounds for etching semiconductor structures

Also Published As

Publication number Publication date
TWI343601B (en) 2011-06-11

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