TW200511446A - Liquid for removing degenerated metal layer, and method for removing degenerated metal layer - Google Patents

Liquid for removing degenerated metal layer, and method for removing degenerated metal layer

Info

Publication number
TW200511446A
TW200511446A TW093125031A TW93125031A TW200511446A TW 200511446 A TW200511446 A TW 200511446A TW 093125031 A TW093125031 A TW 093125031A TW 93125031 A TW93125031 A TW 93125031A TW 200511446 A TW200511446 A TW 200511446A
Authority
TW
Taiwan
Prior art keywords
metal layer
degenerated
liquid
removing degenerated
water
Prior art date
Application number
TW093125031A
Other languages
Chinese (zh)
Inventor
Shingo Nakamura
Shinichi Minami
Takashi Kanemura
Mitsushi Itano
Takehiko Kezuka
Fumihiro Kamiya
Original Assignee
Daikin Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Ind Ltd filed Critical Daikin Ind Ltd
Publication of TW200511446A publication Critical patent/TW200511446A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to a liquid for removing a degenerated metal layer formed on a conductive metal, which contains hydrogen fluoride organic solvent and water such that the weight ratio of hydrogen fluoride : organic solvent : water is 0.001-10 wt% : 70-99.998 wt% : 0.001-20 wt%.
TW093125031A 2003-08-20 2004-08-19 Liquid for removing degenerated metal layer, and method for removing degenerated metal layer TW200511446A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003296355 2003-08-20

Publications (1)

Publication Number Publication Date
TW200511446A true TW200511446A (en) 2005-03-16

Family

ID=34213589

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093125031A TW200511446A (en) 2003-08-20 2004-08-19 Liquid for removing degenerated metal layer, and method for removing degenerated metal layer

Country Status (3)

Country Link
JP (1) JPWO2005019499A1 (en)
TW (1) TW200511446A (en)
WO (1) WO2005019499A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI575596B (en) * 2015-01-29 2017-03-21 台灣積體電路製造股份有限公司 Method for forming semiconductor structure
CN107210215A (en) * 2015-02-12 2017-09-26 富士胶片株式会社 The treatment fluid and the manufacture method of semiconductor-based panel products that remove liquid and minimizing technology, the treatment fluid of the compound of III V group elements, the oxidation resistance liquid of III V group elements and semiconductor substrate of the oxide of III V group elements
US10056472B2 (en) 2014-08-29 2018-08-21 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming semiconductor structure with contact over source/drain structure
CN112111741A (en) * 2020-09-25 2020-12-22 深圳市祺鑫环保科技有限公司 Tin stripping liquid copper protecting agent and tin stripping liquid
TWI818893B (en) * 2015-07-14 2023-10-21 美商富士軟片電子材料美國股份有限公司 Cleaning compositions and methods of use therefor

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US20060255315A1 (en) * 2004-11-19 2006-11-16 Yellowaga Deborah L Selective removal chemistries for semiconductor applications, methods of production and uses thereof
EP1946358A4 (en) * 2005-11-09 2009-03-04 Advanced Tech Materials Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon
JP4812405B2 (en) * 2005-11-11 2011-11-09 朝日化学工業株式会社 Pickling accelerator and method for pickling steel materials using the same
JP4826235B2 (en) * 2005-12-01 2011-11-30 三菱瓦斯化学株式会社 Semiconductor surface treatment agent
JP4828451B2 (en) * 2006-03-27 2011-11-30 東京エレクトロン株式会社 Substrate processing method, semiconductor device manufacturing method, and substrate processing apparatus
GB2467357B (en) * 2009-01-30 2011-09-21 Cambridge Display Tech Ltd Organic thin film transistors
US20110076623A1 (en) * 2009-09-29 2011-03-31 Tokyo Electron Limited Method for reworking silicon-containing arc layers on a substrate
JP2012208993A (en) * 2011-03-30 2012-10-25 Konica Minolta Advanced Layers Inc Manufacturing method of glass substrate for magnetic disks
JP6353636B2 (en) * 2013-06-21 2018-07-04 東京エレクトロン株式会社 Method and apparatus for removing titanium oxide film
US10889757B2 (en) * 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
JP2018121077A (en) * 2018-04-19 2018-08-02 東京エレクトロン株式会社 Method and device for removing titanium oxide film
JP7267015B2 (en) * 2019-01-09 2023-05-01 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
JP7202230B2 (en) * 2019-03-20 2023-01-11 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing method and substrate processing apparatus
CN110885979B (en) * 2019-12-13 2021-12-03 湖北兴福电子材料有限公司 Slow-release silicon spot etching agent
WO2021166571A1 (en) * 2020-02-18 2021-08-26 富士フイルム株式会社 Treatment method and treatment solution for object of interest
WO2024048382A1 (en) * 2022-08-31 2024-03-07 富士フイルム株式会社 Method for processing object to be processed, processing liquid, and method for producing electronic device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167632A (en) * 1997-08-18 1999-03-09 Mitsubishi Gas Chem Co Inc Cleaner for semiconductor device
JP2002353443A (en) * 2001-05-23 2002-12-06 Matsushita Electric Ind Co Ltd Method of manufacturing semiconductor device
JP4319445B2 (en) * 2002-06-20 2009-08-26 大日本スクリーン製造株式会社 Substrate processing equipment

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10056472B2 (en) 2014-08-29 2018-08-21 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming semiconductor structure with contact over source/drain structure
US10854736B2 (en) 2014-08-29 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure with contact over source/drain structure
US11600716B2 (en) 2014-08-29 2023-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming semiconductor structure with contact over source/drain structure
TWI575596B (en) * 2015-01-29 2017-03-21 台灣積體電路製造股份有限公司 Method for forming semiconductor structure
CN107210215A (en) * 2015-02-12 2017-09-26 富士胶片株式会社 The treatment fluid and the manufacture method of semiconductor-based panel products that remove liquid and minimizing technology, the treatment fluid of the compound of III V group elements, the oxidation resistance liquid of III V group elements and semiconductor substrate of the oxide of III V group elements
US11145514B2 (en) 2015-02-12 2021-10-12 Fujifilm Corporation Removal liquid and method for removing oxide of group III-V element, treatment liquid for treating compound of group III-V element, oxidation prevention liquid for preventing oxidation of group III-V element, treatment liquid for treating semiconductor substrate, and method for producing semiconductor substrate product
CN107210215B (en) * 2015-02-12 2022-01-11 富士胶片株式会社 III-V group element antioxidant solution, treatment solution, oxide removing solution and method, semiconductor substrate treatment solution and method for manufacturing semiconductor substrate
TWI818893B (en) * 2015-07-14 2023-10-21 美商富士軟片電子材料美國股份有限公司 Cleaning compositions and methods of use therefor
TWI819694B (en) * 2015-07-14 2023-10-21 美商富士軟片電子材料美國股份有限公司 Cleaning compositions and methods of use therefor
CN112111741A (en) * 2020-09-25 2020-12-22 深圳市祺鑫环保科技有限公司 Tin stripping liquid copper protecting agent and tin stripping liquid

Also Published As

Publication number Publication date
JPWO2005019499A1 (en) 2006-10-19
WO2005019499A1 (en) 2005-03-03

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