JP2005079191A - 層間絶縁膜のドライエッチング方法 - Google Patents
層間絶縁膜のドライエッチング方法 Download PDFInfo
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- JP2005079191A JP2005079191A JP2003305146A JP2003305146A JP2005079191A JP 2005079191 A JP2005079191 A JP 2005079191A JP 2003305146 A JP2003305146 A JP 2003305146A JP 2003305146 A JP2003305146 A JP 2003305146A JP 2005079191 A JP2005079191 A JP 2005079191A
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- insulating film
- interlayer insulating
- etching
- gas
- sacrificial layer
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- 239000011229 interlayer Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims description 29
- 238000001312 dry etching Methods 0.000 title claims description 15
- 238000005530 etching Methods 0.000 claims abstract description 94
- 239000010410 layer Substances 0.000 claims abstract description 55
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 18
- 239000011737 fluorine Substances 0.000 claims abstract description 18
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000009977 dual effect Effects 0.000 claims description 8
- 239000011368 organic material Substances 0.000 claims description 2
- 239000000049 pigment Substances 0.000 abstract description 3
- 229920000642 polymer Polymers 0.000 abstract description 3
- 229920002994 synthetic fiber Polymers 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 50
- 239000000758 substrate Substances 0.000 description 15
- 238000000206 photolithography Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000009413 insulation Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000002305 electric material Substances 0.000 description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000012776 electronic material Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- MDAXKAUIABOHTD-UHFFFAOYSA-N 1,4,8,11-tetraazacyclotetradecane Chemical compound C1CNCCNCCCNCCNC1 MDAXKAUIABOHTD-UHFFFAOYSA-N 0.000 description 1
- 101100072643 Arabidopsis thaliana IPS2 gene Proteins 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
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- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】 エッチングガスとして、炭素結合のないフッ素生成ガスを用い、このエッチングガスを1.7Pa以下の作動圧力下で導入してエッチングを行う。
【選択図】 図2
Description
31 ストップ層
32 低誘電率層間絶縁膜
34 ビアホール
35 犠牲層
Claims (5)
- デュアルダマシン構造形成の際に、ビアホールに犠牲層を形成した比誘電率の低い層間絶縁膜をエッチングし、配線用のホール、トレンチを微細加工する層間絶縁膜のドライエッチング方法であって、
エッチングガスとして、炭素結合のないフッ素生成ガスを用い、このエッチングガスを1.7Pa以下の作動圧力下で導入してエッチングを行うことを特徴とする層間絶縁膜のドライエッチング方法。 - 前記エッチングガスに添加するガス種として、エッチング速度制御ガスを用いることを特徴とする請求項1記載の層間絶縁膜のドライエッチング方法。
- 前記フッ素生成ガスの混合比として、エッチングガスの総流量に対してフッ素生成ガスの比率を10%以下としたことを特徴とする請求項1または請求項2記載の層間絶縁膜のドライエッチング方法。
- 前記フッ素生成ガスを、NF3、F2N2、F4N2、SF6、F2、XeF2、SiF4の中から選択することを特徴とする請求項1乃至請求項3のいずれかに記載の層間絶縁膜のドライエッチング方法。
- 前記犠牲層は、シロキサンベースの有機材料を含むことを特徴とする請求項1乃至請求項3のいずれかに記載の層間絶縁膜のドライエッチング方法。
Priority Applications (1)
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JP2003305146A JP4681217B2 (ja) | 2003-08-28 | 2003-08-28 | 層間絶縁膜のドライエッチング方法 |
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JP2003305146A JP4681217B2 (ja) | 2003-08-28 | 2003-08-28 | 層間絶縁膜のドライエッチング方法 |
Publications (2)
Publication Number | Publication Date |
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JP2005079191A true JP2005079191A (ja) | 2005-03-24 |
JP4681217B2 JP4681217B2 (ja) | 2011-05-11 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006295171A (ja) * | 2005-04-11 | 2006-10-26 | Interuniv Micro Electronica Centrum Vzw | デュアル・ダマシン・パターニング・アプローチ |
JP2007250873A (ja) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体 |
JP2007250874A (ja) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体 |
JP2008060565A (ja) * | 2006-08-21 | 2008-03-13 | Lam Res Corp | 三層レジストによる有機層エッチング |
WO2008103705A2 (en) * | 2007-02-22 | 2008-08-28 | Intel Corporation | Methods of forming transistor contacts and via openings |
JP2008536305A (ja) * | 2005-03-29 | 2008-09-04 | ラム リサーチ コーポレーション | フォトレジストマスクを用いたエッチング |
KR20140058733A (ko) * | 2012-11-05 | 2014-05-15 | 엘지디스플레이 주식회사 | 플렉시블 디스플레이 장치의 제조방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11307629A (ja) * | 1998-04-16 | 1999-11-05 | Toshiba Corp | 半導体装置の製造方法 |
JPH11307630A (ja) * | 1998-04-17 | 1999-11-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2000188330A (ja) * | 1998-12-21 | 2000-07-04 | Nec Corp | デュアルダマシン配線の形成方法 |
-
2003
- 2003-08-28 JP JP2003305146A patent/JP4681217B2/ja not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11307629A (ja) * | 1998-04-16 | 1999-11-05 | Toshiba Corp | 半導体装置の製造方法 |
JPH11307630A (ja) * | 1998-04-17 | 1999-11-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2000188330A (ja) * | 1998-12-21 | 2000-07-04 | Nec Corp | デュアルダマシン配線の形成方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008536305A (ja) * | 2005-03-29 | 2008-09-04 | ラム リサーチ コーポレーション | フォトレジストマスクを用いたエッチング |
KR101252878B1 (ko) * | 2005-03-29 | 2013-04-09 | 램 리써치 코포레이션 | 포토레지스트 마스크를 이용한 에칭 |
JP2006295171A (ja) * | 2005-04-11 | 2006-10-26 | Interuniv Micro Electronica Centrum Vzw | デュアル・ダマシン・パターニング・アプローチ |
JP2007250873A (ja) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体 |
JP2007250874A (ja) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体 |
JP2008060565A (ja) * | 2006-08-21 | 2008-03-13 | Lam Res Corp | 三層レジストによる有機層エッチング |
WO2008103705A2 (en) * | 2007-02-22 | 2008-08-28 | Intel Corporation | Methods of forming transistor contacts and via openings |
WO2008103705A3 (en) * | 2007-02-22 | 2008-11-27 | Intel Corp | Methods of forming transistor contacts and via openings |
KR20140058733A (ko) * | 2012-11-05 | 2014-05-15 | 엘지디스플레이 주식회사 | 플렉시블 디스플레이 장치의 제조방법 |
KR101993389B1 (ko) * | 2012-11-05 | 2019-06-27 | 엘지디스플레이 주식회사 | 플렉시블 디스플레이 장치의 제조방법 |
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