JP4982443B2 - 層間絶縁膜のドライエッチング方法 - Google Patents
層間絶縁膜のドライエッチング方法 Download PDFInfo
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- JP4982443B2 JP4982443B2 JP2008182928A JP2008182928A JP4982443B2 JP 4982443 B2 JP4982443 B2 JP 4982443B2 JP 2008182928 A JP2008182928 A JP 2008182928A JP 2008182928 A JP2008182928 A JP 2008182928A JP 4982443 B2 JP4982443 B2 JP 4982443B2
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- Japan
- Prior art keywords
- etching
- gas
- insulating film
- interlayer insulating
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011229 interlayer Substances 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 25
- 238000001312 dry etching Methods 0.000 title claims description 15
- 238000005530 etching Methods 0.000 claims description 58
- 239000007789 gas Substances 0.000 claims description 49
- 238000000206 photolithography Methods 0.000 claims description 15
- 125000001153 fluoro group Chemical group F* 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000007788 roughening Methods 0.000 claims description 3
- 229960001716 benzalkonium Drugs 0.000 claims description 2
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 description 14
- -1 fluorocarbon compound Chemical class 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 229910052794 bromium Inorganic materials 0.000 description 10
- 229910052740 iodine Inorganic materials 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 8
- 230000007935 neutral effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 6
- 150000002367 halogens Chemical class 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000002305 electric material Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 241000894007 species Species 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 244000132059 Carica parviflora Species 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000031709 bromination Effects 0.000 description 1
- 238000005893 bromination reaction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QLOAVXSYZAJECW-UHFFFAOYSA-N methane;molecular fluorine Chemical compound C.FF QLOAVXSYZAJECW-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
入してエッチングを行うことが知られている(特許文献1)。
(比較例1)
11a プラズマ発生室 11b 基板電極室
31 レジストマスク 32 エッジ部
33 エッジ荒れ 34 層間絶縁膜
35 ホール、トレンチ 36 ストリエーション
S 処理基板
Claims (2)
- ArFフォトリソグラフィ法を用いて形成したレジストマスクによって覆われたSiO 2 層間絶縁膜を、エッチングガスとして、C 3 F 7 Brガス、Ar及び酸素を導入しつつ、エッチャントのF原子数密度の減少したプラズマ雰囲気中で、レジストマスクのパターニングされた領域のエッジ部の荒れを抑制してドライエッチングし、ストリエーションの発生を抑制しながらホール、トレンチを微細加工することを特徴とする層間絶縁膜のドライエッチング方法。
- 前記酸素が、エッチングガスの総流量に対して3〜15%の範囲の量で添加されることを特徴とする請求項1に記載の層間絶縁膜のドライエッチング方法。
Priority Applications (1)
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JP2008182928A JP4982443B2 (ja) | 2008-07-14 | 2008-07-14 | 層間絶縁膜のドライエッチング方法 |
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JP2008182928A JP4982443B2 (ja) | 2008-07-14 | 2008-07-14 | 層間絶縁膜のドライエッチング方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004294882A Division JP4761502B2 (ja) | 2004-10-07 | 2004-10-07 | 層間絶縁膜のドライエッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008252139A JP2008252139A (ja) | 2008-10-16 |
JP4982443B2 true JP4982443B2 (ja) | 2012-07-25 |
Family
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Family Applications (1)
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JP2008182928A Active JP4982443B2 (ja) | 2008-07-14 | 2008-07-14 | 層間絶縁膜のドライエッチング方法 |
Country Status (1)
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JP (1) | JP4982443B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10607850B2 (en) * | 2016-12-30 | 2020-03-31 | American Air Liquide, Inc. | Iodine-containing compounds for etching semiconductor structures |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3160961B2 (ja) * | 1991-10-02 | 2001-04-25 | ソニー株式会社 | ドライエッチング方法 |
JP3559691B2 (ja) * | 1997-09-04 | 2004-09-02 | 株式会社日立製作所 | 半導体装置の製造方法 |
JP4839506B2 (ja) * | 2000-04-28 | 2011-12-21 | ダイキン工業株式会社 | ドライエッチング方法 |
JP4568444B2 (ja) * | 2001-03-27 | 2010-10-27 | 株式会社アルバック | 基板上に堆積したポーラスシリカを含有する材料の薄膜のエッチング法 |
JP2002296791A (ja) * | 2001-04-02 | 2002-10-09 | Toshiba Corp | パターン形成方法 |
JP4067357B2 (ja) * | 2002-08-05 | 2008-03-26 | 株式会社アルバック | エッチング方法 |
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2008
- 2008-07-14 JP JP2008182928A patent/JP4982443B2/ja active Active
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