JP4834897B2 - 不揮発性半導体記憶装置およびその動作方法 - Google Patents

不揮発性半導体記憶装置およびその動作方法 Download PDF

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Publication number
JP4834897B2
JP4834897B2 JP2000180763A JP2000180763A JP4834897B2 JP 4834897 B2 JP4834897 B2 JP 4834897B2 JP 2000180763 A JP2000180763 A JP 2000180763A JP 2000180763 A JP2000180763 A JP 2000180763A JP 4834897 B2 JP4834897 B2 JP 4834897B2
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region
insulating film
gate
memory device
nonvolatile semiconductor
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JP2002026149A (ja
JP2002026149A5 (enExample
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一郎 藤原
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Sony Corp
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Sony Corp
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Priority to JP2000180763A priority Critical patent/JP4834897B2/ja
Priority to US09/842,795 priority patent/US6674120B2/en
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Publication of JP2002026149A5 publication Critical patent/JP2002026149A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP2000180763A 2000-05-02 2000-06-12 不揮発性半導体記憶装置およびその動作方法 Expired - Lifetime JP4834897B2 (ja)

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Application Number Priority Date Filing Date Title
JP2000180763A JP4834897B2 (ja) 2000-05-02 2000-06-12 不揮発性半導体記憶装置およびその動作方法
US09/842,795 US6674120B2 (en) 2000-05-02 2001-04-27 Nonvolatile semiconductor memory device and method of operation thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000138251 2000-05-02
JP2000-138251 2000-05-02
JP2000138251 2000-05-02
JP2000180763A JP4834897B2 (ja) 2000-05-02 2000-06-12 不揮発性半導体記憶装置およびその動作方法

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JP2002026149A JP2002026149A (ja) 2002-01-25
JP2002026149A5 JP2002026149A5 (enExample) 2007-02-01
JP4834897B2 true JP4834897B2 (ja) 2011-12-14

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US (1) US6674120B2 (enExample)
JP (1) JP4834897B2 (enExample)

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JP2002026149A (ja) 2002-01-25
US6674120B2 (en) 2004-01-06

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