JP4810746B2 - Ｉｉｉ族窒化物系化合物半導体素子 - Google Patents

Ｉｉｉ族窒化物系化合物半導体素子 Download PDF

Info

Publication number
JP4810746B2
JP4810746B2 JP2001101990A JP2001101990A JP4810746B2 JP 4810746 B2 JP4810746 B2 JP 4810746B2 JP 2001101990 A JP2001101990 A JP 2001101990A JP 2001101990 A JP2001101990 A JP 2001101990A JP 4810746 B2 JP4810746 B2 JP 4810746B2
Authority
JP
Japan
Prior art keywords
electrode
seat
auxiliary
auxiliary electrode
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001101990A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001345480A5 (enExample
JP2001345480A (ja
Inventor
俊也 上村
敦雄 平野
光一 太田
尚久 長坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2001101990A priority Critical patent/JP4810746B2/ja
Publication of JP2001345480A publication Critical patent/JP2001345480A/ja
Publication of JP2001345480A5 publication Critical patent/JP2001345480A5/ja
Application granted granted Critical
Publication of JP4810746B2 publication Critical patent/JP4810746B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Led Devices (AREA)
JP2001101990A 2000-03-31 2001-03-30 Ｉｉｉ族窒化物系化合物半導体素子 Expired - Fee Related JP4810746B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001101990A JP4810746B2 (ja) 2000-03-31 2001-03-30 Ｉｉｉ族窒化物系化合物半導体素子

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-96865 2000-03-31
JP2000096865 2000-03-31
JP2000096865 2000-03-31
JP2001101990A JP4810746B2 (ja) 2000-03-31 2001-03-30 Ｉｉｉ族窒化物系化合物半導体素子

Publications (3)

Publication Number Publication Date
JP2001345480A JP2001345480A (ja) 2001-12-14
JP2001345480A5 JP2001345480A5 (enExample) 2008-04-17
JP4810746B2 true JP4810746B2 (ja) 2011-11-09

Family

ID=26589066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001101990A Expired - Fee Related JP4810746B2 (ja) 2000-03-31 2001-03-30 Ｉｉｉ族窒化物系化合物半導体素子

Country Status (1)

Country Link
JP (1) JP4810746B2 (enExample)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6825501B2 (en) * 1997-08-29 2004-11-30 Cree, Inc. Robust Group III light emitting diode for high reliability in standard packaging applications
JP3956918B2 (ja) * 2002-10-03 2007-08-08 日亜化学工業株式会社 発光ダイオード
CN100461467C (zh) * 2002-10-03 2009-02-11 日亚化学工业株式会社 发光二极管
JP4635985B2 (ja) * 2002-10-03 2011-02-23 日亜化学工業株式会社 発光ダイオード
JP2004363572A (ja) * 2003-05-12 2004-12-24 Showa Denko Kk 半導体発光素子および発光ダイオード
US6869812B1 (en) 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
JP4581540B2 (ja) * 2003-06-30 2010-11-17 日亜化学工業株式会社 半導体発光素子とそれを用いた発光装置
JP4572604B2 (ja) * 2003-06-30 2010-11-04 日亜化学工業株式会社 半導体発光素子及びそれを用いた発光装置
JP4438492B2 (ja) * 2003-09-11 2010-03-24 日亜化学工業株式会社 半導体装置およびその製造方法
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
DE102004025610A1 (de) * 2004-04-30 2005-11-17 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit mehreren Stromaufweitungsschichten und Verfahren zu dessen Herstellung
JP4632690B2 (ja) * 2004-05-11 2011-02-16 スタンレー電気株式会社 半導体発光装置とその製造方法
WO2005122288A1 (en) * 2004-06-09 2005-12-22 Showa Denko K.K. Trnsparent positive electrode for gallium nitride-based compound semiconductor light-emitting device and light-emitting device
US7582905B2 (en) * 2004-09-08 2009-09-01 Rohm Co., Ltd. Semiconductor light emitting device
TWI291243B (en) * 2005-06-24 2007-12-11 Epistar Corp A semiconductor light-emitting device
WO2007010793A1 (ja) * 2005-07-15 2007-01-25 Matsushita Electric Industrial Co., Ltd. 半導体発光素子及び半導体発光素子実装済み基板
KR100616693B1 (ko) 2005-08-09 2006-08-28 삼성전기주식회사 질화물 반도체 발광 소자
KR100661614B1 (ko) * 2005-10-07 2006-12-26 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
KR100706944B1 (ko) * 2005-10-17 2007-04-12 삼성전기주식회사 질화물계 반도체 발광소자
KR100730082B1 (ko) * 2005-10-17 2007-06-19 삼성전기주식회사 질화물계 반도체 발광소자
JP2007123517A (ja) * 2005-10-27 2007-05-17 Toshiba Corp 半導体発光素子及び半導体発光装置
KR100833309B1 (ko) * 2006-04-04 2008-05-28 삼성전기주식회사 질화물계 반도체 발광소자
JP5056082B2 (ja) 2006-04-17 2012-10-24 日亜化学工業株式会社 半導体発光素子
JP4823866B2 (ja) * 2006-11-13 2011-11-24 株式会社小糸製作所 車両用灯具の発光モジュール
KR100814464B1 (ko) 2006-11-24 2008-03-17 삼성전기주식회사 질화물계 반도체 발광소자
JP5023691B2 (ja) * 2006-12-26 2012-09-12 日亜化学工業株式会社 半導体発光素子
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP5141086B2 (ja) * 2007-04-25 2013-02-13 日亜化学工業株式会社 半導体発光素子
KR101354981B1 (ko) 2007-11-14 2014-01-27 삼성전자주식회사 질화물 반도체 발광 다이오드
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
US8115222B2 (en) 2008-01-16 2012-02-14 Rohm Co., Ltd. Semiconductor light emitting device and fabrication method for the semiconductor light emitting device
CN101499510B (zh) * 2008-01-30 2011-06-22 富士迈半导体精密工业（上海）有限公司 半导体发光元件
KR100988041B1 (ko) 2008-05-15 2010-10-18 주식회사 에피밸리 반도체 발광소자
KR101000277B1 (ko) 2008-12-04 2010-12-10 주식회사 에피밸리 반도체 발광소자
JP5614938B2 (ja) * 2009-02-26 2014-10-29 日亜化学工業株式会社 半導体発光素子
JP2010225771A (ja) 2009-03-23 2010-10-07 Toyoda Gosei Co Ltd 半導体発光素子
KR101021974B1 (ko) 2009-04-08 2011-03-16 (주)더리즈 자기조립 패키지용 반도체 칩
JP5392611B2 (ja) 2009-09-14 2014-01-22 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
US9324691B2 (en) 2009-10-20 2016-04-26 Epistar Corporation Optoelectronic device
JP5560674B2 (ja) * 2009-11-27 2014-07-30 日亜化学工業株式会社 半導体発光素子
JP2011119519A (ja) 2009-12-04 2011-06-16 Showa Denko Kk 半導体発光素子及び半導体発光装置
KR101055768B1 (ko) * 2009-12-14 2011-08-11 서울옵토디바이스주식회사 전극패드들을 갖는 발광 다이오드
US9236532B2 (en) 2009-12-14 2016-01-12 Seoul Viosys Co., Ltd. Light emitting diode having electrode pads
JP5443286B2 (ja) * 2009-12-24 2014-03-19 スタンレー電気株式会社 フェイスアップ型光半導体装置
KR101625125B1 (ko) * 2009-12-29 2016-05-27 서울바이오시스 주식회사 전극 연장부들을 갖는 발광 다이오드
WO2011083923A2 (en) * 2010-01-07 2011-07-14 Seoul Opto Device Co., Ltd. Light emitting diode having electrode pads
KR101625122B1 (ko) * 2010-01-18 2016-05-27 서울바이오시스 주식회사 전극패드들을 갖는 발광 다이오드
KR101636034B1 (ko) * 2010-02-12 2016-07-05 서울바이오시스 주식회사 전극패드들을 갖는 발광 다이오드
JP5494005B2 (ja) 2010-02-26 2014-05-14 豊田合成株式会社 半導体発光素子
JP5087097B2 (ja) 2010-03-08 2012-11-28 株式会社東芝 半導体発光素子
KR101021988B1 (ko) * 2010-06-24 2011-03-16 (주)더리즈 반도체 발광 소자
TWI466284B (zh) * 2010-07-02 2014-12-21 晶元光電股份有限公司 光電元件
JP2012028749A (ja) * 2010-07-22 2012-02-09 Seoul Opto Devices Co Ltd 発光ダイオード
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
JP5170325B2 (ja) * 2010-07-23 2013-03-27 日亜化学工業株式会社 発光素子
JP2012054525A (ja) * 2010-08-04 2012-03-15 Toshiba Corp 半導体発光素子
JP5095785B2 (ja) 2010-08-09 2012-12-12 株式会社東芝 半導体発光素子及びその製造方法
US20120037946A1 (en) * 2010-08-12 2012-02-16 Chi Mei Lighting Technology Corporation Light emitting devices
JP5737066B2 (ja) 2010-08-26 2015-06-17 日亜化学工業株式会社 半導体発光素子
WO2012057469A2 (ko) * 2010-10-25 2012-05-03 주식회사 세미콘라이트 반도체 발광소자
KR101087970B1 (ko) 2010-10-25 2011-12-01 주식회사 세미콘라이트 반도체 발광소자
JP5605189B2 (ja) * 2010-11-26 2014-10-15 豊田合成株式会社 半導体発光素子
USD674356S1 (en) 2011-02-01 2013-01-15 Nichia Corporation Light emitting diode chip
JP5652234B2 (ja) 2011-02-07 2015-01-14 日亜化学工業株式会社 半導体発光素子
KR101786094B1 (ko) * 2011-06-23 2017-10-16 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지, 및 라이트 유닛
JP4970611B2 (ja) * 2011-07-29 2012-07-11 株式会社東芝 半導体発光素子
CN103797592A (zh) 2011-08-17 2014-05-14 三星电子株式会社 半导体发光器件
JP5766095B2 (ja) * 2011-11-07 2015-08-19 シチズンホールディングス株式会社 半導体発光素子
KR101901589B1 (ko) * 2011-11-14 2018-09-27 엘지이노텍 주식회사 발광소자
KR101954204B1 (ko) * 2012-08-28 2019-06-12 엘지이노텍 주식회사 발광소자
KR101973765B1 (ko) * 2012-09-14 2019-04-30 포항공과대학교 산학협력단 발광 효율이 개선된 반도체 발광 소자
JP6102677B2 (ja) * 2012-12-28 2017-03-29 日亜化学工業株式会社 発光素子
KR101986720B1 (ko) * 2013-01-03 2019-06-10 엘지이노텍 주식회사 발광 소자 및 그를 포함하는 발광소자 패키지
JP6331906B2 (ja) * 2013-09-13 2018-05-30 日亜化学工業株式会社 発光素子
JP2015109332A (ja) * 2013-12-04 2015-06-11 シャープ株式会社 半導体発光素子
JP6458463B2 (ja) * 2013-12-09 2019-01-30 日亜化学工業株式会社 発光素子
KR101625131B1 (ko) 2013-12-17 2016-05-27 서울바이오시스 주식회사 전극패드들을 갖는 발광 다이오드
US20150364651A1 (en) * 2014-06-12 2015-12-17 Toshiba Corporation Flip-Chip Light Emitting Diode Assembly With Relief Channel
KR102407827B1 (ko) * 2015-01-27 2022-06-13 서울바이오시스 주식회사 발광 소자
KR102288376B1 (ko) * 2014-09-30 2021-08-11 서울바이오시스 주식회사 발광 다이오드
KR101539430B1 (ko) * 2014-09-02 2015-07-27 서울바이오시스 주식회사 발광 다이오드 및 그 제조 방법
EP3062354B1 (en) 2015-02-26 2020-10-14 Nichia Corporation Light emitting element
JP6428467B2 (ja) * 2015-04-24 2018-11-28 日亜化学工業株式会社 発光素子
KR101662198B1 (ko) * 2015-12-30 2016-10-05 서울바이오시스 주식회사 전극 연장부들을 갖는 발광 다이오드
KR102059974B1 (ko) * 2019-04-26 2019-12-27 에피스타 코포레이션 광전소자
KR102053426B1 (ko) * 2019-05-29 2019-12-06 엘지이노텍 주식회사 발광 소자 및 그를 포함하는 발광소자 패키지
KR102544373B1 (ko) * 2020-12-22 2023-06-15 중앙대학교 산학협력단 C2 대칭성 led 소자
KR20220090092A (ko) * 2020-12-22 2022-06-29 중앙대학교 산학협력단 파동 에너지를 이용한 c2 대칭성 led 소자의 배열을 이용한 디스플레이 모듈의 제작 방법
KR20250132051A (ko) * 2024-02-28 2025-09-04 엘지디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0373185A (ja) * 1989-01-01 1991-03-28 Hiromitsu Saito カッターガイド
JP3234993B2 (ja) * 1992-09-24 2001-12-04 ローム株式会社 発光ダイオードチップ、およびこれを用いた発光ダイオードチップアレイ
DE19517697A1 (de) * 1995-05-13 1996-11-14 Telefunken Microelectron Strahlungsemittierende Diode
JP3960636B2 (ja) * 1995-09-29 2007-08-15 三洋電機株式会社 発光素子
JPH10294493A (ja) * 1997-02-21 1998-11-04 Toshiba Corp 半導体発光デバイス
JP3369089B2 (ja) * 1997-11-13 2003-01-20 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
US6346771B1 (en) * 1997-11-19 2002-02-12 Unisplay S.A. High power led lamp
US6307218B1 (en) * 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices

Also Published As

Publication number Publication date
JP2001345480A (ja) 2001-12-14

Similar Documents

Publication Publication Date Title
JP4810746B2 (ja) Ｉｉｉ族窒化物系化合物半導体素子
US7042089B2 (en) Group III nitride compound semiconductor device
KR100558890B1 (ko) 반도체 소자
US6316792B1 (en) Compound semiconductor light emitter and a method for manufacturing the same
US6847052B2 (en) Light-emitting diode device geometry
US8679869B2 (en) Contact for a semiconductor light emitting device
USRE45217E1 (en) Semiconductor light emitting device with transparent electrode having holes
JP3207773B2 (ja) 化合物半導体発光素子及びその製造方法
US7196348B2 (en) GaN system semiconductor light emitting device excellent in light emission efficiency and light extracting efficiency
US6486500B1 (en) Led structure having a schottky contact and manufacturing method
EP1530242B1 (en) Semiconductor light emitting device
JP2006080469A (ja) 窒化物半導体発光素子
US7095059B2 (en) Group III nitride compound semiconductor device
JP2003524901A (ja) 電磁線を放出するための半導体構造素子およびその製造方法
JP4255710B2 (ja) 半導体発光素子
JP3717284B2 (ja) 発光素子、発光素子アレイ及び発光素子の製造方法
JP4376361B2 (ja) ＡｌＧａＩｎＰ発光ダイオード
JP7751053B2 (ja) 半導体素子
JP2002016288A (ja) Ｉｉｉ族窒化物系化合物半導体発光素子
JP3624781B2 (ja) Ｉｉｉ族窒化物系化合物半導体素子
JP2003258304A (ja) 半導体発光素子及びその製造方法
JPS60170983A (ja) 半導体発光装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080218

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100803

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100803

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100928

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110124

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110405

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110414

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110726

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110808

R150 Certificate of patent or registration of utility model

Ref document number: 4810746

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140902

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees