JP4794030B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4794030B2
JP4794030B2 JP2000207911A JP2000207911A JP4794030B2 JP 4794030 B2 JP4794030 B2 JP 4794030B2 JP 2000207911 A JP2000207911 A JP 2000207911A JP 2000207911 A JP2000207911 A JP 2000207911A JP 4794030 B2 JP4794030 B2 JP 4794030B2
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JP
Japan
Prior art keywords
gate
region
gate electrode
transistor
electrode
Prior art date
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Expired - Fee Related
Application number
JP2000207911A
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English (en)
Japanese (ja)
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JP2002026125A5 (enExample
JP2002026125A (ja
Inventor
博之 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2000207911A priority Critical patent/JP4794030B2/ja
Priority to US09/818,907 priority patent/US6635935B2/en
Priority to TW090107363A priority patent/TW490807B/zh
Priority to CNB011174986A priority patent/CN1199285C/zh
Priority to KR10-2001-0025384A priority patent/KR100392715B1/ko
Publication of JP2002026125A publication Critical patent/JP2002026125A/ja
Publication of JP2002026125A5 publication Critical patent/JP2002026125A5/ja
Application granted granted Critical
Publication of JP4794030B2 publication Critical patent/JP4794030B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions

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  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2000207911A 2000-07-10 2000-07-10 半導体装置 Expired - Fee Related JP4794030B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000207911A JP4794030B2 (ja) 2000-07-10 2000-07-10 半導体装置
US09/818,907 US6635935B2 (en) 2000-07-10 2001-03-28 Semiconductor device cell having regularly sized and arranged features
TW090107363A TW490807B (en) 2000-07-10 2001-03-28 Semiconductor device
CNB011174986A CN1199285C (zh) 2000-07-10 2001-05-10 半导体装置
KR10-2001-0025384A KR100392715B1 (ko) 2000-07-10 2001-05-10 반도체 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000207911A JP4794030B2 (ja) 2000-07-10 2000-07-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2002026125A JP2002026125A (ja) 2002-01-25
JP2002026125A5 JP2002026125A5 (enExample) 2008-07-31
JP4794030B2 true JP4794030B2 (ja) 2011-10-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000207911A Expired - Fee Related JP4794030B2 (ja) 2000-07-10 2000-07-10 半導体装置

Country Status (5)

Country Link
US (1) US6635935B2 (enExample)
JP (1) JP4794030B2 (enExample)
KR (1) KR100392715B1 (enExample)
CN (1) CN1199285C (enExample)
TW (1) TW490807B (enExample)

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JP4599048B2 (ja) * 2003-10-02 2010-12-15 川崎マイクロエレクトロニクス株式会社 半導体集積回路のレイアウト構造、半導体集積回路のレイアウト方法、およびフォトマスク
JP2005243928A (ja) * 2004-02-26 2005-09-08 Fujitsu Ltd トレンチアイソレーションで分離されたトランジスタ対を有する半導体装置
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JP4248451B2 (ja) 2004-06-11 2009-04-02 パナソニック株式会社 半導体装置およびそのレイアウト設計方法
JP4778689B2 (ja) 2004-06-16 2011-09-21 パナソニック株式会社 標準セル、標準セルライブラリおよび半導体集積回路
JP4175649B2 (ja) 2004-07-22 2008-11-05 松下電器産業株式会社 半導体装置
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US7321139B2 (en) * 2006-05-26 2008-01-22 Taiwan Semiconductor Manufacturing Co., Ltd. Transistor layout for standard cell with optimized mechanical stress effect
US7873929B2 (en) * 2006-08-14 2011-01-18 The Regents Of The University Of California Method, apparatus and system for designing an integrated circuit including generating at least one auxiliary pattern for cell-based optical proximity correction
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KR101739709B1 (ko) 2008-07-16 2017-05-24 텔라 이노베이션스, 인코포레이티드 동적 어레이 아키텍쳐에서의 셀 페이징과 배치를 위한 방법 및 그 구현
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JP5147654B2 (ja) * 2008-11-18 2013-02-20 パナソニック株式会社 半導体装置
JP4947064B2 (ja) * 2009-01-09 2012-06-06 セイコーエプソン株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
CN1199285C (zh) 2005-04-27
US6635935B2 (en) 2003-10-21
US20020003270A1 (en) 2002-01-10
KR100392715B1 (ko) 2003-07-28
CN1333567A (zh) 2002-01-30
KR20020005956A (ko) 2002-01-18
JP2002026125A (ja) 2002-01-25
TW490807B (en) 2002-06-11

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