TW490807B - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW490807B
TW490807B TW090107363A TW90107363A TW490807B TW 490807 B TW490807 B TW 490807B TW 090107363 A TW090107363 A TW 090107363A TW 90107363 A TW90107363 A TW 90107363A TW 490807 B TW490807 B TW 490807B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
gate
gate electrodes
contributing
semiconductor
Prior art date
Application number
TW090107363A
Other languages
English (en)
Inventor
Hiroshi Makino
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW490807B publication Critical patent/TW490807B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Description

490807 案號 90107363 六、申請專利範圍 一構件構成 11 ·如申請專利範圍第1項之半導體裝置，其中，所選 擇之該閘極（ΙΑ、1B、2A、2B)之自該第二方向之一端至另 一端分割成2以上。 1 2·如申請專利範圍第1項之半導體裝置，其中，設成 相鄰之該主動區域（1U〜114)在該第一方向之間隔大致相 同0 13. 如申請專利範圍第1項之半導體裝置，其中 電晶體形成區域（101)構成一個一個標準單元（21) < 14. 一種半導體裝置，包括：電晶體形成區域（1〇1)， 有在半導體基板形成之複數源極/汲極區域（8〜丨4)和沿 ，第一方向排列且各自之閘寬方向和與該第一方向垂直之 第一方向一致之複數閘極；及複數電場效應電晶體，各自 由該複數閘極（1〜4)之中之一個和該複數源極/汲極區域 (8 = 4)之中之2個構成；其特徵在於：在列方向及 配置該^電場效應電晶體包括2種以上之係該複數源極/ 没極區域（8〜14)沿著第二方向之長度之主動區域寬（5~?) 不同的、該複數閘極（Η)各自之閘寬 域寬(5〜7)以上之積體電路，構成半導體積體
TW090107363A 2000-07-10 2001-03-28 Semiconductor device TW490807B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000207911A JP4794030B2 (ja) 2000-07-10 2000-07-10 半導体装置

Publications (1)

Publication Number Publication Date
TW490807B true TW490807B (en) 2002-06-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW090107363A TW490807B (en) 2000-07-10 2001-03-28 Semiconductor device

Country Status (5)

Country Link
US (1) US6635935B2 (zh)
JP (1) JP4794030B2 (zh)
KR (1) KR100392715B1 (zh)
CN (1) CN1199285C (zh)
TW (1) TW490807B (zh)

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Also Published As

Publication number Publication date
JP2002026125A (ja) 2002-01-25
JP4794030B2 (ja) 2011-10-12
CN1199285C (zh) 2005-04-27
KR20020005956A (ko) 2002-01-18
KR100392715B1 (ko) 2003-07-28
US6635935B2 (en) 2003-10-21
CN1333567A (zh) 2002-01-30
US20020003270A1 (en) 2002-01-10

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