JP4791110B2 - 真空チャンバおよび真空処理装置 - Google Patents

真空チャンバおよび真空処理装置 Download PDF

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Publication number
JP4791110B2
JP4791110B2 JP2005255294A JP2005255294A JP4791110B2 JP 4791110 B2 JP4791110 B2 JP 4791110B2 JP 2005255294 A JP2005255294 A JP 2005255294A JP 2005255294 A JP2005255294 A JP 2005255294A JP 4791110 B2 JP4791110 B2 JP 4791110B2
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JP
Japan
Prior art keywords
main frame
vacuum chamber
reinforcing
substrate
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005255294A
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English (en)
Japanese (ja)
Other versions
JP2007073542A (ja
JP2007073542A5 (enExample
Inventor
星児 岡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2005255294A priority Critical patent/JP4791110B2/ja
Priority to KR1020060083845A priority patent/KR100856145B1/ko
Priority to TW095132454A priority patent/TWI406332B/zh
Priority to CNB2006101289226A priority patent/CN100421212C/zh
Publication of JP2007073542A publication Critical patent/JP2007073542A/ja
Publication of JP2007073542A5 publication Critical patent/JP2007073542A5/ja
Application granted granted Critical
Publication of JP4791110B2 publication Critical patent/JP4791110B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2005255294A 2005-09-02 2005-09-02 真空チャンバおよび真空処理装置 Expired - Fee Related JP4791110B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005255294A JP4791110B2 (ja) 2005-09-02 2005-09-02 真空チャンバおよび真空処理装置
KR1020060083845A KR100856145B1 (ko) 2005-09-02 2006-08-31 진공 챔버 및 진공 처리 장치
TW095132454A TWI406332B (zh) 2005-09-02 2006-09-01 Vacuum chamber and vacuum treatment device
CNB2006101289226A CN100421212C (zh) 2005-09-02 2006-09-04 真空腔室和真空处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005255294A JP4791110B2 (ja) 2005-09-02 2005-09-02 真空チャンバおよび真空処理装置

Publications (3)

Publication Number Publication Date
JP2007073542A JP2007073542A (ja) 2007-03-22
JP2007073542A5 JP2007073542A5 (enExample) 2008-10-02
JP4791110B2 true JP4791110B2 (ja) 2011-10-12

Family

ID=37817679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005255294A Expired - Fee Related JP4791110B2 (ja) 2005-09-02 2005-09-02 真空チャンバおよび真空処理装置

Country Status (4)

Country Link
JP (1) JP4791110B2 (enExample)
KR (1) KR100856145B1 (enExample)
CN (1) CN100421212C (enExample)
TW (1) TWI406332B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100423179C (zh) 2002-06-21 2008-10-01 应用材料股份有限公司 用于真空处理系统的传送处理室
KR101101757B1 (ko) * 2005-11-07 2012-01-05 주성엔지니어링(주) 제조비용을 절감한 진공챔버
WO2009078351A1 (ja) * 2007-12-14 2009-06-25 Ulvac, Inc. チャンバ及び成膜装置
JP5551346B2 (ja) * 2008-06-10 2014-07-16 東京エレクトロン株式会社 チャンバ及び処理装置
CN102272350B (zh) * 2009-01-14 2014-12-24 株式会社爱发科 等离子cvd装置
FI122940B (fi) * 2009-02-09 2012-09-14 Beneq Oy Reaktiokammio
KR20110067939A (ko) * 2009-12-15 2011-06-22 주식회사 테스 로드락 챔버
KR101598176B1 (ko) * 2010-03-30 2016-02-26 주식회사 원익아이피에스 진공챔버
JP5526988B2 (ja) * 2010-04-28 2014-06-18 東京エレクトロン株式会社 基板処理装置及び基板処理システム
KR101363064B1 (ko) * 2012-05-22 2014-02-14 박종민 진공 챔버 구조
US9717147B2 (en) 2013-09-26 2017-07-25 Applied Materials, Inc. Electronic device manufacturing system
JP7023097B2 (ja) * 2016-12-28 2022-02-21 東京エレクトロン株式会社 真空チャンバおよび真空チャンバの扉の施錠方法
JP6625597B2 (ja) * 2017-11-13 2019-12-25 平田機工株式会社 搬送チャンバ
JP7277137B2 (ja) * 2018-12-28 2023-05-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、および搬送モジュール
KR102193096B1 (ko) 2019-01-31 2020-12-21 (주)에프티엘 진공챔버의 리브를 용접하기 위한 용접지그장치
KR102720200B1 (ko) * 2019-10-10 2024-10-21 주성엔지니어링(주) 클러스터형 기판처리장치
WO2025047616A1 (ja) * 2023-08-31 2025-03-06 キヤノントッキ株式会社 真空チャンバ及び成膜装置
KR102785110B1 (ko) 2024-08-30 2025-03-26 주식회사 창하이앤지 용접용 지그
KR102785109B1 (ko) 2024-08-30 2025-03-26 주식회사 창하이앤지 리브를 용접하기 위한 용접 테이블 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3608065B2 (ja) * 1996-10-31 2005-01-05 東京エレクトロン株式会社 縦型熱処理装置およびそのボートと保温筒のメンテナンス方法
US5914493A (en) * 1997-02-21 1999-06-22 Nikon Corporation Charged-particle-beam exposure apparatus and methods with substrate-temperature control
US6241117B1 (en) * 1997-11-26 2001-06-05 Steven R. Wickins Pressure differential containment structure
JP4253107B2 (ja) * 2000-08-24 2009-04-08 キヤノンアネルバ株式会社 基板処理装置及びその増設方法
JP4003412B2 (ja) * 2001-06-20 2007-11-07 株式会社島津製作所 真空チャンバ及びその真空チャンバを用いた液晶注入装置
JP2003077974A (ja) * 2001-08-31 2003-03-14 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2003188226A (ja) * 2001-12-18 2003-07-04 Anelva Corp 真空搬送処理装置
JP2004089872A (ja) * 2002-08-30 2004-03-25 Tsukishima Kikai Co Ltd 真空装置
JP2004311640A (ja) * 2003-04-04 2004-11-04 Tokyo Electron Ltd 処理容器
SG115678A1 (en) * 2003-04-22 2005-10-28 Asml Netherlands Bv Substrate carrier and method for making a substrate carrier
JP2004335743A (ja) * 2003-05-08 2004-11-25 Ulvac Japan Ltd 真空処理装置用真空チャンバー
KR100441875B1 (ko) * 2003-06-02 2004-07-27 주성엔지니어링(주) 분리형 이송 챔버
JP4833512B2 (ja) * 2003-06-24 2011-12-07 東京エレクトロン株式会社 被処理体処理装置、被処理体処理方法及び被処理体搬送方法
JP4767574B2 (ja) * 2005-03-31 2011-09-07 東京エレクトロン株式会社 処理チャンバおよび処理装置
JP4079157B2 (ja) * 2005-04-12 2008-04-23 東京エレクトロン株式会社 ゲートバルブ装置及び処理システム

Also Published As

Publication number Publication date
CN1925111A (zh) 2007-03-07
JP2007073542A (ja) 2007-03-22
TWI406332B (zh) 2013-08-21
CN100421212C (zh) 2008-09-24
KR100856145B1 (ko) 2008-09-03
KR20070026215A (ko) 2007-03-08
TW200731391A (en) 2007-08-16

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