JP4772787B2 - 液浸フォトリソグラフィのための真空システム - Google Patents

液浸フォトリソグラフィのための真空システム Download PDF

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Publication number
JP4772787B2
JP4772787B2 JP2007516020A JP2007516020A JP4772787B2 JP 4772787 B2 JP4772787 B2 JP 4772787B2 JP 2007516020 A JP2007516020 A JP 2007516020A JP 2007516020 A JP2007516020 A JP 2007516020A JP 4772787 B2 JP4772787 B2 JP 4772787B2
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gas
liquid
pressure
control
tool
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Expired - Fee Related
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Japanese (ja)
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JP2008503079A (ja
Inventor
アンドリュー ジョン ハーパム
ポール ジョン シェクター
ポール アラン ストックマン
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エーエスエムエル ネザーランズ ビー．ブイ．
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D57/00—Separation, other than separation of solids, not fully covered by a single other group or subclass, e.g. B03C
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Degasification And Air Bubble Elimination (AREA)
JP2007516020A 2004-06-16 2005-06-06 液浸フォトリソグラフィのための真空システム Expired - Fee Related JP4772787B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/869,191 US7481867B2 (en) 2004-06-16 2004-06-16 Vacuum system for immersion photolithography
US10/869,191 2004-06-16
PCT/GB2005/002205 WO2005124464A2 (en) 2004-06-16 2005-06-06 Vacuum system for immersion photolithography

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010063578A Division JP5226025B2 (ja) 2004-06-16 2010-03-19 液浸フォトリソグラフィのための真空システム
JP2011102691A Division JP5226101B2 (ja) 2004-06-16 2011-05-02 液浸フォトリソグラフィのための真空システム

Publications (2)

Publication Number Publication Date
JP2008503079A JP2008503079A (ja) 2008-01-31
JP4772787B2 true JP4772787B2 (ja) 2011-09-14

Family

ID=32851367

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2007516020A Expired - Fee Related JP4772787B2 (ja) 2004-06-16 2005-06-06 液浸フォトリソグラフィのための真空システム
JP2010063578A Expired - Fee Related JP5226025B2 (ja) 2004-06-16 2010-03-19 液浸フォトリソグラフィのための真空システム
JP2011102691A Expired - Fee Related JP5226101B2 (ja) 2004-06-16 2011-05-02 液浸フォトリソグラフィのための真空システム

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2010063578A Expired - Fee Related JP5226025B2 (ja) 2004-06-16 2010-03-19 液浸フォトリソグラフィのための真空システム
JP2011102691A Expired - Fee Related JP5226101B2 (ja) 2004-06-16 2011-05-02 液浸フォトリソグラフィのための真空システム

Country Status (10)

Country Link
US (7) US7481867B2 (enExample)
EP (1) EP1756672B1 (enExample)
JP (3) JP4772787B2 (enExample)
KR (2) KR101341923B1 (enExample)
CN (2) CN101794081B (enExample)
AT (1) ATE464589T1 (enExample)
DE (1) DE602005020619D1 (enExample)
GB (1) GB0414967D0 (enExample)
TW (1) TWI339131B (enExample)
WO (1) WO2005124464A2 (enExample)

Cited By (1)

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JP2010141363A (ja) * 2004-06-16 2010-06-24 Asml Netherlands Bv 液浸フォトリソグラフィのための真空システム

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CN102323724B (zh) * 2003-07-28 2014-08-13 株式会社尼康 液浸曝光装置及其制造方法、曝光装置、器件制造方法
KR101748923B1 (ko) 2003-09-03 2017-06-19 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
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US8717533B2 (en) * 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101178755B1 (ko) 2004-06-10 2012-08-31 가부시키가이샤 니콘 엔지니어링 노광 장치, 노광 방법 및 디바이스 제조 방법
US8508713B2 (en) * 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070139628A1 (en) * 2004-06-10 2007-06-21 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8373843B2 (en) * 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
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US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US8018573B2 (en) * 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7433016B2 (en) * 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8514365B2 (en) * 2007-06-01 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7924404B2 (en) * 2007-08-16 2011-04-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
NL1036306A1 (nl) * 2007-12-20 2009-06-23 Asml Netherlands Bv Lithographic apparatus and in-line cleaning apparatus.
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JP2010098172A (ja) * 2008-10-17 2010-04-30 Canon Inc 液体回収装置、露光装置及びデバイス製造方法
JP5001343B2 (ja) * 2008-12-11 2012-08-15 エーエスエムエル ネザーランズ ビー．ブイ． 流体抽出システム、液浸リソグラフィ装置、及び液浸リソグラフィ装置で使用される液浸液の圧力変動を低減する方法
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CA2733042A1 (en) * 2010-03-01 2011-09-01 Wavefront Technology Solutions Inc. Method and apparatus for enhancing multiphase extraction of contaminants
US20120012191A1 (en) * 2010-07-16 2012-01-19 Nikon Corporation Liquid recovery apparatus, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
NL2009899A (en) * 2011-12-20 2013-06-24 Asml Netherlands Bv A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method.
CN104035288A (zh) * 2014-06-05 2014-09-10 浙江大学 用于浸没式光刻机中的负压环境下的连续气液分离装置
KR102407018B1 (ko) * 2014-07-31 2022-06-08 가부시키가이샤 시겐 가이하츠 겐큐죠 세정 장치
JP6535649B2 (ja) * 2016-12-12 2019-06-26 株式会社荏原製作所 基板処理装置、排出方法およびプログラム
CN112684675B (zh) * 2020-12-30 2023-02-21 浙江启尔机电技术有限公司 真空系统及使用该真空系统的浸没式光刻机
TW202439039A (zh) * 2023-03-21 2024-10-01 聯華電子股份有限公司 微影機台系統及其液體儲存槽的漏液檢測方法
WO2024208512A1 (en) 2023-04-04 2024-10-10 Asml Netherlands B.V. Fluid handling system and method, and method of manufacturing devices

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