JP4753413B2 - 不揮発性半導体記憶装置及びその製造方法 - Google Patents
不揮発性半導体記憶装置及びその製造方法 Download PDFInfo
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- JP4753413B2 JP4753413B2 JP2005057111A JP2005057111A JP4753413B2 JP 4753413 B2 JP4753413 B2 JP 4753413B2 JP 2005057111 A JP2005057111 A JP 2005057111A JP 2005057111 A JP2005057111 A JP 2005057111A JP 4753413 B2 JP4753413 B2 JP 4753413B2
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- 239000004065 semiconductor Substances 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000003990 capacitor Substances 0.000 claims description 85
- 239000012535 impurity Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 18
- 230000015556 catabolic process Effects 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 65
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000002513 implantation Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
- H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Description
なお、本発明に関連する技術文献としては、以下の特許文献が挙げられる。
通常、一つの半導体装置に内蔵されるOTPメモリセルの個数は少なく、半導体製品の全面積に対してOTPメモリセルが占める面積は大きくないが、一般的なOTPメモリセルが不揮発性の特性を有するためには、上述のとおり積層構造を有していた(この積層構造は一般的にポリシリコン層,絶縁層,ポリシリコン層が順次形成されているので便宜上PIP構造と称す)。
3 Pウェル領域 4 低濃度のソース領域
5 低濃度のドレイン領域 6 シリコン酸化膜、ゲート絶縁膜
7 シリコン酸化膜 7a,7b キャパシタ絶縁膜
8 埋め込み層 9 ゲート電極
10 導電層 11 スペーサ膜
12 高濃度のソース領域 13 高濃度のドレイン領域
14 層間絶縁膜 15 プラグ
16 プラグ 20 チャネル領域
S ソース領域 D ドレイン領域
FC1 第1のコンタクトホール FC2 第2のコンタクトホール
C1 第1のキャパシタ C2 第2のキャパシタ
T1 第1のセルトランジスタ T2 第2のセルトランジスタ
WLL,WLR ワード線 DL データ線
GNDL 接地線 BF 出力バッファ
VS 電圧供給回路 R1 セルトランジスタ形成領域
R2 キャパシタ形成領域
Claims (10)
- セルトランジスタとキャパシタを含むメモリセルを備えた不揮発性半導体記憶装置において、
前記セルトランジスタのゲート電極に電気的に接続されたワード線と、
前記セルトランジスタの低濃度の第1のドレイン領域内に形成され、前記低濃度の第1のドレイン領域より高濃度の第2のドレイン領域と、前記第1のドレイン領域内に形成され、前記第2のドレイン領域と接するように形成され、前記第1のドレイン領域より高濃度であり、かつ前記第2のドレイン領域より低濃度から成るキャパシタの下部電極となる埋め込み層と、
前記埋め込み層上に形成されたキャパシタ絶縁膜と、
前記キャパシタ絶縁膜上に形成され、キャパシタの上部電極となる導電層と、
前記導電層に電気的に接続されたデータ線と、
前記データ線から前記キャパシタ絶縁膜に所定の電圧を印加する電圧供給回路とを備え、前記キャパシタ絶縁膜が絶縁破壊されることによりデータが書き込まれ、
前記キャパシタ絶縁膜が絶縁破壊されているか否かによってデータを読み出すことを特徴とする不揮発性半導体記憶装置。 - 前記キャパシタ絶縁膜は前記セルトランジスタのゲート絶縁膜よりも膜厚が薄いことを特徴とする請求項1に記載の不揮発性半導体記憶装置。
- 前記埋め込み層は、前記第2の不純物濃度のドレイン領域と一部がオーバーラップして成ることを特徴とする請求項1または請求項2に記載の不揮発性半導体記憶装置。
- 前記半導体基板上の活性領域を分離する素子分離膜を有し、前記素子分離膜上に前記導電層を備えたことを特徴とする請求項1乃至請求項3のいずれかに記載の不揮発性半導体記憶装置。
- 前記埋め込み層は前記素子分離膜と隣接していることを特徴とする請求項4に記載の不揮発性半導体記憶装置。
- 前記セルトランジスタのソース領域は接地されていることを特徴とする請求項1乃至請求項5のいずれかに記載の不揮発性半導体記憶装置。
- 半導体基板上にキャパシタとセルトランジスタを含むメモリセルを備えた不揮発性半導体記憶装置の製造方法において、
前記半導体基板の表面に第1の不純物濃度のドレイン領域を形成する工程と、
前記第1の不純物濃度のドレイン領域上にキャパシタ絶縁膜を形成する工程と、
前記第1の不純物濃度のドレイン領域内に当該第1の不純物濃度のドレイン領域より高濃度の前記キャパシタの下部電極となる埋め込み層を形成する工程と、
前記キャパシタ絶縁膜上に前記キャパシタの上部電極となる導電層を形成する工程と、
前記埋め込み層に接するように、当該埋め込み層より高濃度な第2の不純物濃度のドレイン領域を形成する工程とを含むことを特徴とする不揮発性半導体記憶装置の製造方法。 - 前記キャパシタ絶縁膜は前記セルトランジスタのゲート絶縁膜の膜厚よりも膜厚が薄いことを特徴とする請求項7に記載の不揮発性半導体記憶装置の製造方法。
- 前記第2の不純物濃度のドレイン領域を形成する工程は、前記埋め込み層と一部がオーバーラップするようにイオン注入して形成すること特徴とする請求項7または請求項8に記載の不揮発性半導体記憶装置の製造方法。
- 前記第1の不純物濃度のドレイン領域を形成する工程の前に、前記メモリセルを素子分離する素子分離膜を形成する工程を有し、その後、
前記素子分離膜に隣接して前記第1の不純物濃度のドレイン領域を形成する工程と、
前記素子分離膜上に前記導電層を形成する工程を含むことを特徴とする請求項7乃至請求項9のいずれかに記載の不揮発性半導体記憶装置の製造方法。
Priority Applications (6)
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JP2005057111A JP4753413B2 (ja) | 2005-03-02 | 2005-03-02 | 不揮発性半導体記憶装置及びその製造方法 |
TW095104518A TWI303877B (en) | 2005-03-02 | 2006-02-10 | Nonvolatile semiconductor memory device and method for producing the same |
CN2006100094998A CN1828774B (zh) | 2005-03-02 | 2006-02-23 | 非易失性半导体存储装置 |
MYPI20060830A MY141489A (en) | 2005-03-02 | 2006-02-27 | Nonvolatile semiconductor memory device and manufacturing method of the same |
US11/363,507 US7459747B2 (en) | 2005-03-02 | 2006-02-28 | Nonvolatile semiconductor memory device and manufacturing method of the same |
KR1020060019090A KR100721490B1 (ko) | 2005-03-02 | 2006-02-28 | 불휘발성 반도체 기억 장치 및 그 제조 방법 |
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JP4753413B2 true JP4753413B2 (ja) | 2011-08-24 |
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US (1) | US7459747B2 (ja) |
JP (1) | JP4753413B2 (ja) |
KR (1) | KR100721490B1 (ja) |
CN (1) | CN1828774B (ja) |
MY (1) | MY141489A (ja) |
TW (1) | TWI303877B (ja) |
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KR100518577B1 (ko) | 2003-05-26 | 2005-10-04 | 삼성전자주식회사 | 원 타임 프로그래머블 메모리 소자 및 이를 포함하는반도체 집적회로와 그 제조방법 |
JP4098208B2 (ja) * | 2003-10-01 | 2008-06-11 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
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CN1828774B (zh) | 2010-05-12 |
CN1828774A (zh) | 2006-09-06 |
JP2006245177A (ja) | 2006-09-14 |
US20060221698A1 (en) | 2006-10-05 |
TW200636978A (en) | 2006-10-16 |
US7459747B2 (en) | 2008-12-02 |
MY141489A (en) | 2010-04-30 |
KR100721490B1 (ko) | 2007-05-23 |
KR20060096303A (ko) | 2006-09-11 |
TWI303877B (en) | 2008-12-01 |
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