JP4619461B2 - 薄膜デバイスの転写方法、及びデバイスの製造方法 - Google Patents

薄膜デバイスの転写方法、及びデバイスの製造方法 Download PDF

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Publication number
JP4619461B2
JP4619461B2 JP30037396A JP30037396A JP4619461B2 JP 4619461 B2 JP4619461 B2 JP 4619461B2 JP 30037396 A JP30037396 A JP 30037396A JP 30037396 A JP30037396 A JP 30037396A JP 4619461 B2 JP4619461 B2 JP 4619461B2
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JP
Japan
Prior art keywords
layer
thin film
transfer
substrate
separation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP30037396A
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English (en)
Japanese (ja)
Other versions
JPH10125930A (ja
JPH10125930A5 (enExample
Inventor
達也 下田
聡 井上
和加雄 宮沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP30037396A priority Critical patent/JP4619461B2/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to DE69739368T priority patent/DE69739368D1/de
Priority to DE69737086T priority patent/DE69737086T2/de
Priority to US09/051,966 priority patent/US6372608B1/en
Priority to PCT/JP1997/002972 priority patent/WO1998009333A1/ja
Priority to TW086112252A priority patent/TW360901B/zh
Priority to EP97935891A priority patent/EP0858110B1/en
Priority to EP06075225A priority patent/EP1655633A3/en
Priority to CNA031579647A priority patent/CN1495523A/zh
Priority to KR10-1998-0703007A priority patent/KR100481994B1/ko
Priority to EP06076860A priority patent/EP1758169A3/en
Priority to KR10-2004-7015277A priority patent/KR100500520B1/ko
Priority to EP06076859A priority patent/EP1744365B1/en
Priority to EP03076869A priority patent/EP1351308B1/en
Priority to CNB971911347A priority patent/CN1143394C/zh
Priority to DE69739376T priority patent/DE69739376D1/de
Publication of JPH10125930A publication Critical patent/JPH10125930A/ja
Priority to US10/091,562 priority patent/US6645830B2/en
Priority to US10/420,840 priority patent/US6818530B2/en
Priority to US10/851,202 priority patent/US7094665B2/en
Publication of JPH10125930A5 publication Critical patent/JPH10125930A5/ja
Priority to US11/242,017 priority patent/US7285476B2/en
Priority to US11/514,985 priority patent/US7468308B2/en
Application granted granted Critical
Publication of JP4619461B2 publication Critical patent/JP4619461B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP30037396A 1996-08-27 1996-11-12 薄膜デバイスの転写方法、及びデバイスの製造方法 Expired - Fee Related JP4619461B2 (ja)

Priority Applications (21)

Application Number Priority Date Filing Date Title
JP30037396A JP4619461B2 (ja) 1996-08-27 1996-11-12 薄膜デバイスの転写方法、及びデバイスの製造方法
EP03076869A EP1351308B1 (en) 1996-08-27 1997-08-26 Exfoliating method and transferring method of thin film device
US09/051,966 US6372608B1 (en) 1996-08-27 1997-08-26 Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method
PCT/JP1997/002972 WO1998009333A1 (fr) 1996-08-27 1997-08-26 Methode de separation, procede de transfert d'un dispositif a film mince, dispositif a film mince, dispositif a circuit integre a film mince et dispositif d'affichage a cristaux liquides obtenu par application du procede de transfert
TW086112252A TW360901B (en) 1996-08-27 1997-08-26 Method of peeling thin-film device, method of transferring thin-film device, thin-film device thereby, thin-film IC circuit device, and liquid crystal display device
EP97935891A EP0858110B1 (en) 1996-08-27 1997-08-26 Separating method, method for transferring thin film device, and liquid crystal display device manufactured by using the transferring method
EP06075225A EP1655633A3 (en) 1996-08-27 1997-08-26 Exfoliating method, transferring method of thin film device, thin film integrated circuit device, and liquid crystal display device
CNA031579647A CN1495523A (zh) 1996-08-27 1997-08-26 转移方法和有源矩阵基板的制造方法
KR10-1998-0703007A KR100481994B1 (ko) 1996-08-27 1997-08-26 박리방법,박막디바이스의전사방법,및그것을이용하여제조되는박막디바이스,박막집적회로장치및액정표시장치
DE69737086T DE69737086T2 (de) 1996-08-27 1997-08-26 Trennverfahren, verfahren zur übertragung eines dünnfilmbauelements, und unter verwendung des übertragungsverfahrens hergestelltes flüssigkristall-anzeigebauelement
KR10-2004-7015277A KR100500520B1 (ko) 1996-08-27 1997-08-26 전사 방법 및 액티브 매트릭스 기판 제조 방법
EP06076859A EP1744365B1 (en) 1996-08-27 1997-08-26 Exfoliating method and transferring method of thin film device
DE69739368T DE69739368D1 (de) 1996-08-27 1997-08-26 Trennverfahren und Verfahren zur Übertragung eines Dünnfilmbauelements
CNB971911347A CN1143394C (zh) 1996-08-27 1997-08-26 剥离方法、溥膜器件的转移方法和薄膜器件
EP06076860A EP1758169A3 (en) 1996-08-27 1997-08-26 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
DE69739376T DE69739376D1 (de) 1996-08-27 1997-08-26 Ablösungsverfahren und Verfahren zum Übertragen eines Dünnfilm-Bauelements
US10/091,562 US6645830B2 (en) 1996-08-27 2002-03-07 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same
US10/420,840 US6818530B2 (en) 1996-08-27 2003-04-23 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US10/851,202 US7094665B2 (en) 1996-08-27 2004-05-24 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US11/242,017 US7285476B2 (en) 1996-08-27 2005-10-04 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
US11/514,985 US7468308B2 (en) 1996-08-27 2006-09-05 Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP22564396 1996-08-27
JP8-225643 1996-08-27
JP30037396A JP4619461B2 (ja) 1996-08-27 1996-11-12 薄膜デバイスの転写方法、及びデバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2003382626A Division JP2004140380A (ja) 1996-08-27 2003-11-12 薄膜デバイスの転写方法、及びデバイスの製造方法

Publications (3)

Publication Number Publication Date
JPH10125930A JPH10125930A (ja) 1998-05-15
JPH10125930A5 JPH10125930A5 (enExample) 2004-11-11
JP4619461B2 true JP4619461B2 (ja) 2011-01-26

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JP30037396A Expired - Fee Related JP4619461B2 (ja) 1996-08-27 1996-11-12 薄膜デバイスの転写方法、及びデバイスの製造方法

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Country Link
JP (1) JP4619461B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102575775B1 (ko) * 2023-03-29 2023-09-08 주식회사 비플러스 플렉시블 디스플레이의 레이어 분리 방법

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* Cited by examiner, † Cited by third party
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US7034775B2 (en) 2001-03-26 2006-04-25 Seiko Epson Corporation Display device and method for manufacturing the same
JP4019305B2 (ja) * 2001-07-13 2007-12-12 セイコーエプソン株式会社 薄膜装置の製造方法
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4567282B2 (ja) * 2001-07-16 2010-10-20 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4527068B2 (ja) * 2001-07-16 2010-08-18 株式会社半導体エネルギー研究所 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法
JP4027740B2 (ja) * 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6814832B2 (en) 2001-07-24 2004-11-09 Seiko Epson Corporation Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance
JP2003142666A (ja) * 2001-07-24 2003-05-16 Seiko Epson Corp 素子の転写方法、素子の製造方法、集積回路、回路基板、電気光学装置、ｉｃカード、及び電子機器
EP2565924B1 (en) 2001-07-24 2018-01-10 Samsung Electronics Co., Ltd. Transfer method
JP2003109773A (ja) 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP5057619B2 (ja) 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP4602261B2 (ja) * 2001-08-10 2010-12-22 株式会社半導体エネルギー研究所 剥離方法および半導体装置の作製方法
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TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
JP4166455B2 (ja) 2001-10-01 2008-10-15 株式会社半導体エネルギー研究所 偏光フィルム及び発光装置
KR100944886B1 (ko) 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
JP2003229548A (ja) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 乗物、表示装置、および半導体装置の作製方法
TWI264121B (en) 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
JP4567941B2 (ja) * 2001-12-28 2010-10-27 株式会社半導体エネルギー研究所 半導体装置の作製方法及び表示装置の作製方法
US6953735B2 (en) 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
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TWI330269B (en) 2002-12-27 2010-09-11 Semiconductor Energy Lab Separating method
US7230316B2 (en) 2002-12-27 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transferred integrated circuit
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US7436050B2 (en) 2003-01-22 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a flexible printed circuit
JP4151420B2 (ja) 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
JP4524992B2 (ja) * 2003-01-28 2010-08-18 セイコーエプソン株式会社 薄膜トランジスタ型表示装置、薄膜素子の製造方法、薄膜トランジスタ回路基板、電気光学装置および電子機器
JP2004247373A (ja) 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd 半導体装置
US7973313B2 (en) 2003-02-24 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container
JP4526771B2 (ja) 2003-03-14 2010-08-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004349513A (ja) * 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器
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JP2005085705A (ja) * 2003-09-10 2005-03-31 Seiko Epson Corp 電気デバイス及びその製造方法、電子機器
TWI372462B (en) 2003-10-28 2012-09-11 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP4689249B2 (ja) * 2003-11-28 2011-05-25 株式会社半導体エネルギー研究所 表示装置の作製方法
JP4836445B2 (ja) * 2003-12-12 2011-12-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI406690B (zh) 2004-02-26 2013-09-01 Semiconductor Energy Lab 運動器具，娛樂工具，和訓練工具
JP2006049800A (ja) 2004-03-10 2006-02-16 Seiko Epson Corp 薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器
JP4225238B2 (ja) 2004-04-21 2009-02-18 セイコーエプソン株式会社 有機ｅｌ装置の製造方法及び有機ｅｌ装置並びに電子機器
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KR101223197B1 (ko) * 2004-09-24 2013-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제조방법
JP4940402B2 (ja) * 2004-10-19 2012-05-30 セイコーエプソン株式会社 薄膜装置の製造方法
JP2006120726A (ja) 2004-10-19 2006-05-11 Seiko Epson Corp 薄膜装置の製造方法、電気光学装置、及び電子機器
JP4945726B2 (ja) * 2004-11-05 2012-06-06 セイコーエプソン株式会社 薄膜装置の製造方法
US8030132B2 (en) 2005-05-31 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including peeling step
JP4916680B2 (ja) 2005-06-30 2012-04-18 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法
CN100375236C (zh) * 2005-11-30 2008-03-12 董玟昌 形成可分离界面的方法及使用此方法制作微机电薄膜
JP4610515B2 (ja) * 2006-04-21 2011-01-12 株式会社半導体エネルギー研究所 剥離方法
JP2010027767A (ja) 2008-07-17 2010-02-04 Seiko Epson Corp 薄膜デバイス、薄膜デバイスの製造方法及び電子機器
JP4928529B2 (ja) * 2008-11-12 2012-05-09 日東電工株式会社 偏光板の製造方法、偏光板、光学フィルムおよび画像表示装置
KR100913124B1 (ko) * 2009-01-05 2009-08-19 학교법인 포항공과대학교 레이저를 이용한 플렉서블 소자의 제조방법
US7927975B2 (en) * 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
JP5147794B2 (ja) * 2009-08-04 2013-02-20 株式会社半導体エネルギー研究所 表示装置の作製方法及び電子書籍の作製方法
JP5132722B2 (ja) * 2010-06-16 2013-01-30 株式会社半導体エネルギー研究所 剥離方法
TWI445118B (zh) * 2012-02-09 2014-07-11 Subtron Technology Co Ltd 分邊設備及其操作方法
JP6197369B2 (ja) * 2013-05-24 2017-09-20 富士通株式会社 配線基板の製造方法および配線基板製造用の型
CN106663391B (zh) 2013-12-02 2019-09-03 株式会社半导体能源研究所 显示装置及其制造方法
JP5978199B2 (ja) * 2013-12-25 2016-08-24 株式会社半導体エネルギー研究所 発光装置
CN106133062B (zh) 2014-03-31 2019-02-19 日产化学工业株式会社 剥离层形成用组合物
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EP3172762B1 (en) * 2014-07-22 2021-04-21 Brewer Science, Inc. Temporary substrate bonding method using a polyimide release layer and substrate stack including said polyimide release layer
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JP6705444B2 (ja) 2015-03-31 2020-06-03 日産化学株式会社 剥離層
JP6524972B2 (ja) * 2015-09-28 2019-06-05 Jsr株式会社 対象物の処理方法、仮固定用組成物、半導体装置及びその製造方法
KR102386514B1 (ko) 2016-05-23 2022-04-14 닛산 가가쿠 가부시키가이샤 박리층 형성용 조성물 및 박리층
US20200317963A1 (en) 2016-05-23 2020-10-08 Nissan Chemical Corporation Detachable layer-forming composition and detachable layer
KR20190013838A (ko) 2016-05-23 2019-02-11 닛산 가가쿠 가부시키가이샤 박리층 형성용 조성물 및 박리층
US10957722B2 (en) 2016-05-26 2021-03-23 Joled Inc. Method of manufacturing flexible device using multidirectional oblique irradiation of an interface between a support substrate and a flexible substrate
TWI757319B (zh) 2016-08-03 2022-03-11 日商日產化學工業股份有限公司 剝離層形成用組成物
JP7135857B2 (ja) 2016-08-03 2022-09-13 日産化学株式会社 剥離層形成用組成物
KR102365302B1 (ko) 2016-08-03 2022-02-22 닛산 가가쿠 가부시키가이샤 투명 수지 기판용 박리층 형성용 조성물
JP7063266B2 (ja) 2016-08-03 2022-05-09 日産化学株式会社 剥離層形成用組成物及び剥離層
JP6297654B2 (ja) * 2016-09-29 2018-03-20 株式会社半導体エネルギー研究所 発光装置
CN110050013B (zh) 2016-12-08 2022-11-29 日产化学株式会社 剥离层的制造方法
WO2018105676A1 (ja) 2016-12-08 2018-06-14 日産化学工業株式会社 剥離層の製造方法
KR102439472B1 (ko) 2016-12-08 2022-09-05 닛산 가가쿠 가부시키가이샤 박리층의 제조 방법
CN110099974B (zh) 2016-12-27 2022-02-25 日产化学株式会社 基板保护层形成用组合物
JP7092114B2 (ja) 2017-03-30 2022-06-28 日産化学株式会社 剥離層形成用組成物及び剥離層
FR3079657B1 (fr) * 2018-03-29 2024-03-15 Soitec Silicon On Insulator Structure composite demontable par application d'un flux lumineux, et procede de separation d'une telle structure
JP7771956B2 (ja) 2020-07-29 2025-11-18 東洋紡株式会社 フレキシブル電子デバイスの製造方法
CN116130370B (zh) * 2023-02-28 2025-11-04 深圳市矩阵多元科技有限公司 封装结构制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4752455A (en) * 1986-05-27 1988-06-21 Kms Fusion, Inc. Pulsed laser microfabrication
JP2929704B2 (ja) * 1990-11-01 1999-08-03 松下電器産業株式会社 液晶表示用基板の製造方法
JP3091883B2 (ja) * 1991-04-11 2000-09-25 セイコーインスツルメンツ株式会社 光弁装置および半導体装置
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JPH06118441A (ja) * 1991-11-05 1994-04-28 Tadanobu Kato 表示セル
JP2581427B2 (ja) * 1993-12-16 1997-02-12 日本電気株式会社 ポリイミド多層配線基板の製造方法
JP2581431B2 (ja) * 1993-12-28 1997-02-12 日本電気株式会社 多層配線基板の製造方法
JP3257580B2 (ja) * 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
JP3381443B2 (ja) * 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102575775B1 (ko) * 2023-03-29 2023-09-08 주식회사 비플러스 플렉시블 디스플레이의 레이어 분리 방법

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