JP4580633B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP4580633B2
JP4580633B2 JP2003385645A JP2003385645A JP4580633B2 JP 4580633 B2 JP4580633 B2 JP 4580633B2 JP 2003385645 A JP2003385645 A JP 2003385645A JP 2003385645 A JP2003385645 A JP 2003385645A JP 4580633 B2 JP4580633 B2 JP 4580633B2
Authority
JP
Japan
Prior art keywords
electrode
opening
connecting member
layer
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003385645A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005150386A (ja
JP2005150386A5 (https=
Inventor
正彦 土谷
直史 堀尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP2003385645A priority Critical patent/JP4580633B2/ja
Priority to US10/962,109 priority patent/US7285858B2/en
Priority to EP04026606.6A priority patent/EP1531492A3/en
Publication of JP2005150386A publication Critical patent/JP2005150386A/ja
Publication of JP2005150386A5 publication Critical patent/JP2005150386A5/ja
Priority to US11/681,124 priority patent/US7470987B2/en
Application granted granted Critical
Publication of JP4580633B2 publication Critical patent/JP4580633B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07221—Aligning
    • H10W72/07227—Aligning involving guiding structures, e.g. spacers or supporting members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07254—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/227—Multiple bumps having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/237—Multiple bump connectors having different shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/283—Reinforcing structures, e.g. bump collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/285—Alignment aids, e.g. alignment marks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/287—Flow barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/985—Alignment aids, e.g. alignment marks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/987—Flow barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Led Devices (AREA)
  • Wire Bonding (AREA)
  • Led Device Packages (AREA)
JP2003385645A 2003-11-14 2003-11-14 半導体装置及びその製造方法 Expired - Fee Related JP4580633B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003385645A JP4580633B2 (ja) 2003-11-14 2003-11-14 半導体装置及びその製造方法
US10/962,109 US7285858B2 (en) 2003-11-14 2004-10-08 Semiconductor device and its manufacture method capable of preventing short circuit of electrodes when semiconductor device is mounted on sub-mount substrate
EP04026606.6A EP1531492A3 (en) 2003-11-14 2004-11-09 Semiconductor device and its manufacturing method capable of preventing short circuit of electrodes when semiconductor device is mounted on sub-mount substrate
US11/681,124 US7470987B2 (en) 2003-11-14 2007-03-01 Semiconductor device and its manufacture method capable of preventing short circuit of electrodes when semiconductor device is mounted on sub-mount substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003385645A JP4580633B2 (ja) 2003-11-14 2003-11-14 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2005150386A JP2005150386A (ja) 2005-06-09
JP2005150386A5 JP2005150386A5 (https=) 2006-12-28
JP4580633B2 true JP4580633B2 (ja) 2010-11-17

Family

ID=34431512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003385645A Expired - Fee Related JP4580633B2 (ja) 2003-11-14 2003-11-14 半導体装置及びその製造方法

Country Status (3)

Country Link
US (2) US7285858B2 (https=)
EP (1) EP1531492A3 (https=)
JP (1) JP4580633B2 (https=)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4580633B2 (ja) * 2003-11-14 2010-11-17 スタンレー電気株式会社 半導体装置及びその製造方法
US7179670B2 (en) * 2004-03-05 2007-02-20 Gelcore, Llc Flip-chip light emitting diode device without sub-mount
US20060108672A1 (en) * 2004-11-24 2006-05-25 Brennan John M Die bonded device and method for transistor packages
JP4621049B2 (ja) * 2005-03-25 2011-01-26 富士通株式会社 配線基板の製造方法
KR100597166B1 (ko) * 2005-05-03 2006-07-04 삼성전기주식회사 플립 칩 발광다이오드 및 그 제조방법
KR101065076B1 (ko) * 2005-05-07 2011-09-15 삼성전자주식회사 발광소자 패키지용 서브마운트
KR100598357B1 (ko) 2005-05-24 2006-07-06 엘지전자 주식회사 발광소자용 서브마운트 기판
KR100674857B1 (ko) 2005-07-04 2007-01-29 삼성전기주식회사 정전기 방전(ｅｓｄ)을 강화한 엘이디 패키지 및 그제조방법
CN1893043A (zh) * 2005-07-08 2007-01-10 鸿富锦精密工业（深圳）有限公司 散热性基板及光源装置
JP2007096090A (ja) * 2005-09-29 2007-04-12 Sanyo Electric Co Ltd 半導体発光素子及び半導体発光素子の製造方法
US7671468B2 (en) * 2005-09-30 2010-03-02 Tdk Corporation Light emitting apparatus
JP4916715B2 (ja) * 2005-12-21 2012-04-18 富士通株式会社 電子部品
US7928462B2 (en) 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
JP2007221029A (ja) * 2006-02-20 2007-08-30 Sony Corp 半導体発光素子およびその製造方法
US9443903B2 (en) * 2006-06-30 2016-09-13 Cree, Inc. Low temperature high strength metal stack for die attachment
JP2009054892A (ja) * 2007-08-28 2009-03-12 Panasonic Electric Works Co Ltd Ｌｅｄチップの実装方法
JP5426124B2 (ja) * 2008-08-28 2014-02-26 株式会社東芝 半導体発光装置の製造方法及び半導体発光装置
JP2010067889A (ja) * 2008-09-12 2010-03-25 Hitachi Cable Ltd 発光素子
JP5375041B2 (ja) 2008-11-13 2013-12-25 日亜化学工業株式会社 発光装置およびその製造方法
JP2011165799A (ja) * 2010-02-08 2011-08-25 Showa Denko Kk フリップチップ型発光ダイオード及びその製造方法、並びに発光ダイオードランプ
KR100999736B1 (ko) * 2010-02-17 2010-12-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 라이트 유닛
JP5659966B2 (ja) * 2010-06-29 2015-01-28 日亜化学工業株式会社 半導体素子及びその製造方法
JP4778107B1 (ja) * 2010-10-19 2011-09-21 有限会社ナプラ 発光デバイス、及び、その製造方法
KR101803014B1 (ko) 2011-08-24 2017-12-01 서울바이오시스 주식회사 발광다이오드
US8754424B2 (en) 2011-08-29 2014-06-17 Micron Technology, Inc. Discontinuous patterned bonds for semiconductor devices and associated systems and methods
KR20130027903A (ko) * 2011-09-08 2013-03-18 엘지이노텍 주식회사 발광소자
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
KR101596386B1 (ko) * 2011-11-18 2016-02-22 애플 인크. 전기 절연 층을 갖는 마이크로 led 구조체 및 마이크로 led 구조체들의 어레이를 형성하는 방법
US8426227B1 (en) * 2011-11-18 2013-04-23 LuxVue Technology Corporation Method of forming a micro light emitting diode array
US9620478B2 (en) 2011-11-18 2017-04-11 Apple Inc. Method of fabricating a micro device transfer head
TWI484674B (zh) * 2011-12-08 2015-05-11 新世紀光電股份有限公司 電子元件
CN109994586B (zh) * 2012-03-30 2022-06-03 亮锐控股有限公司 密封的半导体发光器件
CN103378244A (zh) * 2012-04-27 2013-10-30 无锡华润华晶微电子有限公司 发光二极管器件及其制造方法
DE102012104494A1 (de) * 2012-05-24 2013-11-28 Epcos Ag Leuchtdiodenvorrichtung
JP6123215B2 (ja) * 2012-10-05 2017-05-10 日亜化学工業株式会社 発光装置
JP5433798B2 (ja) * 2013-01-10 2014-03-05 株式会社東芝 半導体発光素子及び半導体発光装置
JP6082282B2 (ja) * 2013-03-12 2017-02-15 スタンレー電気株式会社 半導体発光装置
JP5712368B2 (ja) * 2013-09-05 2015-05-07 パナソニックＩｐマネジメント株式会社 発光装置
EP3043395B1 (en) 2013-09-05 2018-11-07 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device
EP3051598A4 (en) * 2013-09-26 2017-06-28 Dexerials Corporation Light emitting device, anisotropic conductive adhesive and method for manufacturing light emitting device
JP6107680B2 (ja) * 2014-01-22 2017-04-05 豊田合成株式会社 発光装置およびその製造方法
JP6334945B2 (ja) * 2014-02-17 2018-05-30 スタンレー電気株式会社 半導体発光装置、半導体発光素子、及び、半導体発光装置の製造方法
EP2942815B1 (en) * 2014-05-08 2020-11-18 Nexperia B.V. Semiconductor device and manufacturing method
JP6287624B2 (ja) * 2014-06-24 2018-03-07 日亜化学工業株式会社 発光装置及び発光装置の製造方法
TWI625868B (zh) * 2014-07-03 2018-06-01 晶元光電股份有限公司 光電元件及其製造方法
TWI883921B (zh) * 2014-07-03 2025-05-11 晶元光電股份有限公司 光電元件
DE102014115375A1 (de) * 2014-08-08 2016-02-11 Epcos Ag Träger für eine LED
JP6508601B2 (ja) * 2014-08-11 2019-05-08 パナソニックＩｐマネジメント株式会社 半導体装置
TWI710144B (zh) * 2015-02-17 2020-11-11 新世紀光電股份有限公司 具布拉格反射鏡之發光二極體及其製造方法
JP6362016B2 (ja) * 2015-05-12 2018-07-25 パナソニックＩｐマネジメント株式会社 半導体発光素子及びその製造方法
US10062820B2 (en) 2015-05-15 2018-08-28 Panasonic Intellectual Property Management Co., Ltd. Interposer
US10074624B2 (en) 2015-08-07 2018-09-11 Analog Devices, Inc. Bond pads with differently sized openings
JP6729025B2 (ja) * 2016-06-14 2020-07-22 日亜化学工業株式会社 発光装置
JP6783648B2 (ja) * 2016-12-26 2020-11-11 新光電気工業株式会社 配線基板、半導体装置
CN108666343B (zh) * 2017-03-31 2019-08-30 京东方科技集团股份有限公司 显示基板和显示面板
CN110116983B (zh) * 2018-02-06 2022-02-15 中芯国际集成电路制造(上海)有限公司 Mems器件及其制备方法
JP7107692B2 (ja) * 2018-02-13 2022-07-27 スタンレー電気株式会社 光源用パッケージ及び光源用パッケージの製造方法
JP7218048B2 (ja) * 2018-05-24 2023-02-06 スタンレー電気株式会社 半導体発光装置及びその製造方法
JP7021625B2 (ja) * 2018-09-28 2022-02-17 豊田合成株式会社 発光装置
US10886208B2 (en) 2018-10-12 2021-01-05 Advanced Semiconductor Engineering, Inc. Semiconductor device package, electronic assembly and method for manufacturing the same
US10804176B2 (en) * 2019-02-21 2020-10-13 Win Semiconductors Corp. Low stress moisture resistant structure of semiconductor device
CN111916550B (zh) * 2019-05-09 2023-02-03 群创光电股份有限公司 电子装置
JP7291537B2 (ja) * 2019-05-21 2023-06-15 スタンレー電気株式会社 半導体発光装置
JP7517917B2 (ja) * 2020-09-07 2024-07-17 スタンレー電気株式会社 半導体発光装置
JP7398036B2 (ja) * 2021-06-23 2023-12-14 日亜化学工業株式会社 発光モジュール及びその製造方法
JP7381937B2 (ja) 2021-12-24 2023-11-16 日亜化学工業株式会社 発光モジュールおよび発光モジュールの製造方法
US12402444B2 (en) * 2022-04-25 2025-08-26 PlayNitride Display Co., Ltd. Micro light emitting diode structure and micro light emitting diode display device
TWI806571B (zh) * 2022-04-25 2023-06-21 錼創顯示科技股份有限公司 微型發光二極體結構與微型發光二極體顯示裝置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945399A (en) * 1986-09-30 1990-07-31 International Business Machines Corporation Electronic package with integrated distributed decoupling capacitors
US5227812A (en) * 1990-02-26 1993-07-13 Canon Kabushiki Kaisha Liquid jet recording head with bump connector wiring
JPH0493145U (https=) * 1990-12-25 1992-08-13
US5197654A (en) * 1991-11-15 1993-03-30 Avishay Katz Bonding method using solder composed of multiple alternating gold and tin layers
JP2914065B2 (ja) * 1992-12-08 1999-06-28 日亜化学工業株式会社 青色発光素子及びその製造方法
JP2770717B2 (ja) * 1993-09-21 1998-07-02 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
US5796591A (en) * 1995-06-07 1998-08-18 International Business Machines Corporation Direct chip attach circuit card
JP2994235B2 (ja) * 1995-08-04 1999-12-27 古河電気工業株式会社 光受発光素子モジュール及びその製作方法
JP3292044B2 (ja) * 1996-05-31 2002-06-17 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極パッド及びそれを有した素子及び素子の製造方法
JP3523418B2 (ja) * 1996-06-26 2004-04-26 京セラ株式会社 配線基板
US5990560A (en) * 1997-10-22 1999-11-23 Lucent Technologies Inc. Method and compositions for achieving a kinetically controlled solder bond
JP3255281B2 (ja) * 1997-11-14 2002-02-12 日亜化学工業株式会社 窒化物半導体素子
JPH11340277A (ja) * 1998-05-22 1999-12-10 Nec Corp 半導体チップ搭載基板、半導体装置及び前記半導体チップ搭載基板への半導体チップ搭載方法
US6169294B1 (en) * 1998-09-08 2001-01-02 Epistar Co. Inverted light emitting diode
JP2000135814A (ja) * 1998-10-30 2000-05-16 Kyocera Corp 光プリンタヘッド
US7212556B1 (en) * 1999-02-17 2007-05-01 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device optical disk apparatus and optical integrated unit
JP4897133B2 (ja) * 1999-12-09 2012-03-14 ソニー株式会社 半導体発光素子、その製造方法および配設基板
JP3968554B2 (ja) * 2000-05-01 2007-08-29 セイコーエプソン株式会社 バンプの形成方法及び半導体装置の製造方法
JP2002057373A (ja) * 2000-08-08 2002-02-22 Matsushita Electric Ind Co Ltd 半導体発光装置
WO2002018574A2 (en) * 2000-08-25 2002-03-07 North Shore-Long Island Jewish Research Institute Human interleukin-four induced protein
JP3822040B2 (ja) * 2000-08-31 2006-09-13 株式会社ルネサステクノロジ 電子装置及びその製造方法
JP2002094123A (ja) * 2000-09-14 2002-03-29 Citizen Electronics Co Ltd 表面実装型発光ダイオード及びその製造方法
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill
JP4122784B2 (ja) * 2001-09-19 2008-07-23 松下電工株式会社 発光装置
JP4447806B2 (ja) * 2001-09-26 2010-04-07 スタンレー電気株式会社 発光装置
JP3938337B2 (ja) * 2002-07-01 2007-06-27 ローム株式会社 半導体発光素子、およびその製造方法
TWI303909B (en) * 2002-11-25 2008-12-01 Nichia Corp Ridge waveguide semiconductor laser diode
JP4580633B2 (ja) * 2003-11-14 2010-11-17 スタンレー電気株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20070145554A1 (en) 2007-06-28
JP2005150386A (ja) 2005-06-09
US7470987B2 (en) 2008-12-30
EP1531492A2 (en) 2005-05-18
EP1531492A3 (en) 2018-07-11
US7285858B2 (en) 2007-10-23
US20050104220A1 (en) 2005-05-19

Similar Documents

Publication Publication Date Title
JP4580633B2 (ja) 半導体装置及びその製造方法
JP4946195B2 (ja) 半導体発光素子及びその製造方法
US9142729B2 (en) Light emitting element
US9893240B2 (en) Light emitting diode and LED module having the same
USRE44163E1 (en) Semiconductor light emitting device and method for manufacturing the same
JP5162909B2 (ja) 半導体発光素子
US8124999B2 (en) Light emitting element and method of making the same
JP4330476B2 (ja) 半導体発光素子
JP5235878B2 (ja) 半導体発光素子
US9368687B2 (en) Group-III nitride semiconductor light-emitting element and manufacturing method therefor
TWI795512B (zh) 發光元件
KR102256591B1 (ko) 고효율 발광 장치
JP6041341B2 (ja) 発光素子、発光素子ユニットおよび発光素子パッケージ
JP2014150245A (ja) 発光素子および発光素子パッケージ
JP5326957B2 (ja) 発光素子の製造方法及び発光素子
JP2003110139A (ja) 窒化物系半導体発光素子
US20090184336A1 (en) Semiconductor light emitting device and manufacturing method therefor
JP5950257B2 (ja) 発光素子、発光素子ユニットおよび発光素子パッケージ
JP6016014B2 (ja) 発光素子、発光素子ユニットおよび発光素子パッケージ
JP5151764B2 (ja) 発光素子及び発光素子の製造方法
JP4901241B2 (ja) 半導体発光素子及びその製造方法
JP7846123B2 (ja) 導電層構造及び発光装置
CN112802939B (zh) 一种易于焊接的倒装led芯片
JP4662006B2 (ja) マルチビーム半導体発光装置
JP2007317686A (ja) 光素子チップ、並びに、光モジュールおよびその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061113

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061113

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090402

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100209

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100330

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100608

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100625

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20100817

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20100830

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130903

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4580633

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees