JP4550580B2 - モノリシック集積回路用の支持装置 - Google Patents
モノリシック集積回路用の支持装置 Download PDFInfo
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- JP4550580B2 JP4550580B2 JP2004544075A JP2004544075A JP4550580B2 JP 4550580 B2 JP4550580 B2 JP 4550580B2 JP 2004544075 A JP2004544075 A JP 2004544075A JP 2004544075 A JP2004544075 A JP 2004544075A JP 4550580 B2 JP4550580 B2 JP 4550580B2
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- support
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 33
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 230000032798 delamination Effects 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 13
- 239000004033 plastic Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Description
図1は、一段高くされたペデスタル2を備えた支持装置1の一部分の概略的な断面図である。この断面は、フレームの製造中にパンチツールによって形成された一段高くされたペデスタル2を通るような断面である。示されている例において、ペデスタルの高さhpは120マイクロメートルであり、これは、約250マイクロメートルである支持体の高さhの1/3である。ペデスタルの最適な高さhpの範囲は、支持装置1の材料の厚さhのほぼ1/5乃至2倍である。約300マイクロメートルの現在一般的なチップの高さと比較すると、これは、このチップの高さの1/10乃至1.5倍の範囲にほぼ一致する。複数のボンディングに適したものであるために、一段高いペデスタルは十分な長さと幅を有していなければならない。これは、各パッド直径に対してほぼ35マイクロメートルプラス必要なパッド間隔が必要とされるためである。
Claims (4)
- 支持体(1) のチップ接続領域の表面よりも上方に突出して高くされている複数のペデスタル(2,2')がこのチップ接続領域の外側に形成されている支持体(1) を有するモノリシック集積回路用の支持装置において、
複数の前記ペデスタルの上部表面は支持体(1) のチップ接続領域の表面に平行な平面を有しており、
前記支持体(1) のチップ接続領域の長手方向の両側にはそれぞれ複数の前記ペデスタル(2,2')が配置されており、
前記ペデスタル(2,2')の側面(3) が支持体(1) の表面の平面に関して45°より大きい角度(α)を有しており、
前記複数のペデスタル(2) の上部表面にはそれぞれボンディング接続部が設けられているが、前記複数のペデスタルの少なくとも1つ(2')の上部表面にはボンディング接続部は設けられていないことを特徴とするモノリシック集積回路用の支持装置。 - 前記ペデスタル(2,2')は、ボンディング接続のために機能し、および、または剥離に関連した固定された地点を形成していることを特徴とする請求項1記載の支持装置。
- ペデスタル(2、2 ’) の高さ(hp)は、支持体の厚さの1/10から支持体自身の厚さまでの範囲内であることを特徴とする請求項1または2項記載の支持装置。
- 支持装置(1) はボンディング性を良好にするためにペデスタルの領域内のみに対して銀または金による仕上げが行われていることを特徴とする請求項1乃至3のいずれか1項記載の支持装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10247075A DE10247075A1 (de) | 2002-10-09 | 2002-10-09 | Trägereinrichtung für monolithisch integrierte Schaltungen |
PCT/EP2003/011006 WO2004036646A1 (de) | 2002-10-09 | 2003-10-06 | Trägereinrichtung für monolithisch integrierte schaltungen |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006503427A JP2006503427A (ja) | 2006-01-26 |
JP4550580B2 true JP4550580B2 (ja) | 2010-09-22 |
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ID=32038391
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004544075A Expired - Lifetime JP4550580B2 (ja) | 2002-10-09 | 2003-10-06 | モノリシック集積回路用の支持装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20060151772A1 (ja) |
EP (1) | EP1552558A1 (ja) |
JP (1) | JP4550580B2 (ja) |
KR (1) | KR101003061B1 (ja) |
DE (1) | DE10247075A1 (ja) |
WO (1) | WO2004036646A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US7602050B2 (en) * | 2005-07-18 | 2009-10-13 | Qualcomm Incorporated | Integrated circuit packaging |
JP2010073830A (ja) * | 2008-09-17 | 2010-04-02 | Sumitomo Metal Mining Co Ltd | リードフレーム及びリードフレームの製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS5647967Y2 (ja) * | 1976-05-11 | 1981-11-10 | ||
JPS59104148A (ja) * | 1982-12-06 | 1984-06-15 | Nec Corp | 半導体装置 |
JPS63202948A (ja) * | 1987-02-18 | 1988-08-22 | Mitsubishi Electric Corp | リ−ドフレ−ム |
JPS647626A (en) * | 1987-06-30 | 1989-01-11 | Nec Corp | Semiconductor device |
JPH02285665A (ja) * | 1989-04-26 | 1990-11-22 | Nec Corp | リードフレーム |
JPH04107961A (ja) * | 1990-08-29 | 1992-04-09 | Sumitomo Metal Mining Co Ltd | 多層リードフレーム |
JPH04280664A (ja) * | 1990-10-18 | 1992-10-06 | Texas Instr Inc <Ti> | 半導体装置用リードフレーム |
IT1252197B (it) * | 1991-12-12 | 1995-06-05 | Sgs Thomson Microelectronics | Dispositivo di protezione di circuiti integrati associati a relativi supporti. |
JPH0621132A (ja) * | 1992-07-06 | 1994-01-28 | Seiko Epson Corp | 半導体装置とその製造方法 |
US5365409A (en) * | 1993-02-20 | 1994-11-15 | Vlsi Technology, Inc. | Integrated circuit package design having an intermediate die-attach substrate bonded to a leadframe |
JPH0778926A (ja) * | 1993-09-07 | 1995-03-20 | Nec Kyushu Ltd | 樹脂封止型半導体装置 |
US5859387A (en) * | 1996-11-29 | 1999-01-12 | Allegro Microsystems, Inc. | Semiconductor device leadframe die attach pad having a raised bond pad |
JPH10247701A (ja) * | 1997-03-05 | 1998-09-14 | Hitachi Ltd | 半導体装置およびその製造に用いるリードフレーム |
JPH11163024A (ja) * | 1997-11-28 | 1999-06-18 | Sumitomo Metal Mining Co Ltd | 半導体装置とこれを組み立てるためのリードフレーム、及び半導体装置の製造方法 |
US6365976B1 (en) * | 1999-02-25 | 2002-04-02 | Texas Instruments Incorporated | Integrated circuit device with depressions for receiving solder balls and method of fabrication |
WO2001009953A1 (en) | 1999-07-30 | 2001-02-08 | Amkor Technology, Inc. | Lead frame with downset die pad |
JP2002076228A (ja) * | 2000-09-04 | 2002-03-15 | Dainippon Printing Co Ltd | 樹脂封止型半導体装置 |
-
2002
- 2002-10-09 DE DE10247075A patent/DE10247075A1/de not_active Withdrawn
-
2003
- 2003-10-06 US US10/531,141 patent/US20060151772A1/en not_active Abandoned
- 2003-10-06 EP EP03775171A patent/EP1552558A1/de not_active Withdrawn
- 2003-10-06 WO PCT/EP2003/011006 patent/WO2004036646A1/de active Application Filing
- 2003-10-06 KR KR1020057006068A patent/KR101003061B1/ko active IP Right Grant
- 2003-10-06 JP JP2004544075A patent/JP4550580B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR101003061B1 (ko) | 2010-12-22 |
KR20050053747A (ko) | 2005-06-08 |
EP1552558A1 (de) | 2005-07-13 |
WO2004036646A1 (de) | 2004-04-29 |
DE10247075A1 (de) | 2004-04-22 |
JP2006503427A (ja) | 2006-01-26 |
US20060151772A1 (en) | 2006-07-13 |
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