JP4538830B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4538830B2 JP4538830B2 JP2004098440A JP2004098440A JP4538830B2 JP 4538830 B2 JP4538830 B2 JP 4538830B2 JP 2004098440 A JP2004098440 A JP 2004098440A JP 2004098440 A JP2004098440 A JP 2004098440A JP 4538830 B2 JP4538830 B2 JP 4538830B2
- Authority
- JP
- Japan
- Prior art keywords
- chip
- semiconductor
- semiconductor chip
- dram
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H10W72/90—
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- H10W70/611—
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- H10W70/65—
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- H10W90/00—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H10W46/101—
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- H10W46/601—
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- H10W72/29—
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- H10W72/5522—
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- H10W72/5525—
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- H10W72/932—
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- H10W74/00—
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- H10W74/15—
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- H10W90/20—
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- H10W90/24—
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- H10W90/701—
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- H10W90/724—
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- H10W90/732—
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- H10W90/734—
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- H10W90/754—
Landscapes
- Wire Bonding (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004098440A JP4538830B2 (ja) | 2004-03-30 | 2004-03-30 | 半導体装置 |
| US11/049,993 US7355272B2 (en) | 2004-03-30 | 2005-02-04 | Semiconductor device with stacked semiconductor chips of the same type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004098440A JP4538830B2 (ja) | 2004-03-30 | 2004-03-30 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005286126A JP2005286126A (ja) | 2005-10-13 |
| JP2005286126A5 JP2005286126A5 (cg-RX-API-DMAC10.html) | 2007-05-24 |
| JP4538830B2 true JP4538830B2 (ja) | 2010-09-08 |
Family
ID=35095439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004098440A Expired - Fee Related JP4538830B2 (ja) | 2004-03-30 | 2004-03-30 | 半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7355272B2 (cg-RX-API-DMAC10.html) |
| JP (1) | JP4538830B2 (cg-RX-API-DMAC10.html) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179442A (ja) * | 2002-11-28 | 2004-06-24 | Renesas Technology Corp | マルチチップモジュール |
| JP2007142128A (ja) * | 2005-11-18 | 2007-06-07 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| JP4900661B2 (ja) * | 2006-02-22 | 2012-03-21 | ルネサスエレクトロニクス株式会社 | 不揮発性記憶装置 |
| JP2008166430A (ja) | 2006-12-27 | 2008-07-17 | Toshiba Microelectronics Corp | 半導体装置 |
| US7872340B2 (en) * | 2007-08-31 | 2011-01-18 | Stats Chippac Ltd. | Integrated circuit package system employing an offset stacked configuration |
| US7812435B2 (en) * | 2007-08-31 | 2010-10-12 | Stats Chippac Ltd. | Integrated circuit package-in-package system with side-by-side and offset stacking |
| JP5183186B2 (ja) * | 2007-12-14 | 2013-04-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US8067828B2 (en) * | 2008-03-11 | 2011-11-29 | Stats Chippac Ltd. | System for solder ball inner stacking module connection |
| JP2011249582A (ja) * | 2010-05-27 | 2011-12-08 | Elpida Memory Inc | 半導体装置 |
| US8697457B1 (en) | 2011-06-22 | 2014-04-15 | Bae Systems Information And Electronic Systems Integration Inc. | Devices and methods for stacking individually tested devices to form multi-chip electronic modules |
| KR20130019290A (ko) * | 2011-08-16 | 2013-02-26 | 삼성전자주식회사 | 유니버설 인쇄 회로 기판 및 그것을 포함하는 메모리 카드 |
| CN103681639B (zh) * | 2012-09-25 | 2017-02-08 | 格科微电子(上海)有限公司 | 系统级封装结构及其封装方法 |
| TWI747308B (zh) * | 2019-06-14 | 2021-11-21 | 日商索尼半導體解決方案公司 | 半導體裝置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2670322B1 (fr) | 1990-12-05 | 1997-07-04 | Matra Espace | Modules de memoire a l'etat solide et dispositifs de memoire comportant de tels modules |
| JPH06177322A (ja) * | 1992-12-04 | 1994-06-24 | Matsushita Electric Ind Co Ltd | メモリ素子 |
| JP3481444B2 (ja) * | 1998-01-14 | 2003-12-22 | シャープ株式会社 | 半導体装置及びその製造方法 |
| JPH11354713A (ja) * | 1998-06-05 | 1999-12-24 | Sony Corp | 半導体装置及び実装方法 |
| JP2000164796A (ja) * | 1998-11-27 | 2000-06-16 | Nec Corp | マルチチップモジュール |
| JP3581086B2 (ja) * | 2000-09-07 | 2004-10-27 | 松下電器産業株式会社 | 半導体装置 |
| JP3744825B2 (ja) * | 2000-09-08 | 2006-02-15 | セイコーエプソン株式会社 | 半導体装置 |
| JP2002237566A (ja) * | 2001-02-09 | 2002-08-23 | Matsushita Electric Ind Co Ltd | 半導体装置の3次元実装構造体とその製造方法 |
| JP2002280516A (ja) * | 2001-03-19 | 2002-09-27 | Toshiba Corp | 半導体モジュール |
| JP3839323B2 (ja) * | 2001-04-06 | 2006-11-01 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| CN101303984B (zh) * | 2001-06-07 | 2012-02-15 | 瑞萨电子株式会社 | 半导体装置的制造方法 |
| JP4126891B2 (ja) * | 2001-08-03 | 2008-07-30 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| US6737750B1 (en) * | 2001-12-07 | 2004-05-18 | Amkor Technology, Inc. | Structures for improving heat dissipation in stacked semiconductor packages |
| JP3558070B2 (ja) * | 2002-06-05 | 2004-08-25 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
| TW556961U (en) * | 2002-12-31 | 2003-10-01 | Advanced Semiconductor Eng | Multi-chip stack flip-chip package |
| TW588446B (en) * | 2003-03-21 | 2004-05-21 | Advanced Semiconductor Eng | Multi-chips stacked package |
| JP4381779B2 (ja) * | 2003-11-17 | 2009-12-09 | 株式会社ルネサステクノロジ | マルチチップモジュール |
| JP4260617B2 (ja) * | 2003-12-24 | 2009-04-30 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US20050173807A1 (en) * | 2004-02-05 | 2005-08-11 | Jianbai Zhu | High density vertically stacked semiconductor device |
-
2004
- 2004-03-30 JP JP2004098440A patent/JP4538830B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-04 US US11/049,993 patent/US7355272B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7355272B2 (en) | 2008-04-08 |
| US20050230801A1 (en) | 2005-10-20 |
| JP2005286126A (ja) | 2005-10-13 |
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