JP4516749B2 - 反射層を有するダイオードの製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000000758 substrate Substances 0.000 claims description 79
- 229910052594 sapphire Inorganic materials 0.000 claims description 44
- 239000010980 sapphire Substances 0.000 claims description 44
- 230000003746 surface roughness Effects 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 8
- 238000009616 inductively coupled plasma Methods 0.000 claims description 6
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 46
- 229910002601 GaN Inorganic materials 0.000 description 43
- 239000000463 material Substances 0.000 description 19
- 238000005498 polishing Methods 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
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- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
本発明はダイオードに関するものであり、より詳しくは、発光ダイオード(LED)に関するものである。本発明は発光ダイオードに関して記述されているが、例えば、レーザダイオードのような異なったタイプのダイオードを含む広い範囲の用途に使用できるものである。
窒化ガリウム(GaN)ベースの光子デバイス技術は研究開発段階から商業的実用化へと急速な発展をみせた。これらのデバイスが1994年に市場に登場して以来、GaNベースの光子デバイスは最も有望な半導体デバイスの一つと考えられてきた。例えば、GaN発光ダイオード(LED)の効率は白熱灯のそれを凌駕し、今や蛍光灯のそれに比肩する迄になっている。
GaNベースのデバイスの市場成長は毎年工業製品に関する市場予測を遥かに超えている。交通信号機や自動車の室内灯等の一部の応用分野においては、GaN−LEDの低維持コストと低消費電力はLEDの比較的高い製造コストを補って余りある。しかし、一般の室内灯のような他の応用分野においては、LEDの製造コストはまだ余りにも高く、単純に規模の経済の観点から、このようなデバイスがまだ解決策には至っていないことが明らかである。品質やデバイス設計に関してまだかなり多くの問題はあるが、ある程度の寿命を持った室温動作、連続波長のブルーレーザが提示された。LEDを高い生産性を持って製造することが出来るならば、巨大な潜在市場と結びついた絶え間ない開発努力は受入れ可能なレベル迄コストを引き下げるに違いない。GaNベースの高出力電子デバイスはまた、移動体通信という、もう一つの巨大なマーケットにも応用分野を見出すに違いない。現在のAIInGaNベースLEDの市場を拡大するためには、デバイスの機能を損なうこと無く、低コストの処理技術を開発することが極めて重要である。さらに、高出力光学デバイスには白熱電球灯を置き換えることが強く求められている。それ故、二つの重要な技術的課題を同時に解決することが求められる。即ち、デバイスを安価に製造することと、高出力デバイスを製造することである。
従って、本発明は、関連技術の限界や欠陥に起因する問題点の一つ以上が実質的に排除されたダイオードを目指している。
本発明の利点は、高輝度のダイオードを提供出来ることである。
本発明の他の特徴や利点は以下の説明に記述されているが、説明から明瞭になる部分、或いは、本発明の実施例を通して認識される部分が有るだろう。本発明の目的とその他の利点は、明細書、特許請求の範囲、及び、添付図面の中で特に指摘されているLEDの構造によって実現及び達成される。
別の態様において、ダイオードは、透過性基板と、透過性基板上の活性層と、光子を生成する活性層と、活性層からの光子を反射するための前記透過性基板上の反射層を備える。
別の態様において、ダイオード製造方法は、透過性基板の上方に、光子を生成する活性層を形成すること;活性層からの光子を反射するために前記透過性基板上に反射層を形成することから構成される。
添付図面は本発明を更に良く理解するために添付されており、本明細書に包含されてその一部を構成すると共に、本発明の実施例を例示し、本明細書と共に本発明の原理を説明することに役立つ。
以下に本発明を詳述する。本発明の実施例は添付図面に例示されている。
GaNベースの発光ダイオード(LED)を製造するために、サファイアは非常に安定しており比較的安価であるから、サファイア素材の基板が一般に使用されている。サファイア基板上に成長したAIInGaNのエピタキシャル層の品質は、その熱的安定性と同じ水晶構造のGaNのため、他の基板物質よりも優れている。しかし、AIInGaNベースLEDデバイスを製造するために基板物質としてサファイアを使うことには幾つかの欠点がある。サファイアは絶縁物であるので、n型の基底接触を形成することが不可能である。更に、サファイアの硬さはダイヤモンドとほぼ同じであるので、研削、研磨、スクライビング等の製造後の処理を行うことが非常に難しい。しかし、透過性サファイア基板は、GaAsやInP等の他の非透過性化合物半導体物質に比べ、光抽出に関して有益である。
RF出力:1600ワット
基板バイアス電圧:−350V
ガス混合:18%Cl2、72%BCl3、20%Ar;
基板温度:摂氏20度
エッチング時間:40分
エッチング速度:それぞれ350nm/分
本発明は、簡単で、安価な光抽出方法を既存のデバイス製造方法に適用するものである。この発明によれば、背面ラッピング処理と研磨の後に、金属化という僅か一つの処理を追加することによって顕著な発光出力の増大が可能となる。ドライエッチングを使用する微細な研磨により、製造コストの実質的な増加なしに、場合によっては発光出力を四倍にすることが出来る。
Claims (15)
- サファイア基板を持つ発光ダイオードの製造方法であって:
前記サファイア基板の第一の面上に第一のエピタキシャル層を形成すること;
前記第一のエピタキシャル層上に活性層を形成すること;
前記活性層上に第二のエピタキシャル層を形成すること;
前記第一のエピタキシャル層を部分的に露出させること;
前記第二のエピタキシャル層上に第一の電極を形成すること;
前記第一のエピタキシャル層の露出された面上に第二の電極を形成すること;
誘導結合プラズマ(ICP)反応性イオンビームエッチング(RIE)を使用して、表面粗さが5nm未満となるように、前記サファイア基板の第二の面の表面粗さを減らすこと;
前記サファイア基板の前記第二の面上に反射層を形成すること;及び
誘導結合プラズマ(ICP)反応性イオンビームエッチング(RIE)を使用して、前記サファイア基板上にスクライブ線を形成することを含む方法。 - スクライブ線がサファイア基板の第一の面上に形成される、請求項1に記載の方法。
- スクライブ線はサファイア基板の表面上に窪みを形成する、請求項2に記載の方法。
- 前記窪みは三角形形状を有する、請求項3に記載の方法。
- サファイア基板と第一のエピタキシャル層との間に緩衝層を形成することをさらに含む、請求項1に記載の方法。
- スクライブ線が緩衝層を貫き、サファイア基板の表面上に窪みを形成する、請求項5に記載の方法。
- スクライブ線がサファイア基板の第二の面上に形成される、請求項1に記載の方法。
- スクライブ線は反射層を貫き、サファイア基板の表面上に窪みを形成する、請求項7に記載の方法。
- 前記窪みは三角形形状を有する、請求項8に記載の方法。
- それぞれのダイオードが、少なくとも一対のスクライブ線により、10μm以下の間隙を有して他のダイオードから分離される、請求項1に記載の方法。
- ラッピング処理により、サファイア基板を薄板化することをさらに含む、請求項1に記載の方法。
- サファイア基板の第二の面の少なくとも一部分は、1nm(10オングストローム)未満の表面粗さを有している、請求項1に記載の方法。
- 第一のエピタキシャル層がn型層であり、第二のエピタキシャル層がp型層である、請求項1に記載の方法。
- 第一のエピタキシャル層、第二のエピタキシャル層及び活性層が、GaNをベースとした層である、請求項1に記載の方法。
- 活性層がInGaN層を含む、請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/982,980 US6949395B2 (en) | 2001-10-22 | 2001-10-22 | Method of making diode having reflective layer |
PCT/US2002/033357 WO2003036691A2 (en) | 2001-10-22 | 2002-10-21 | Method of making diode having reflective layer |
Publications (2)
Publication Number | Publication Date |
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JP2006507654A JP2006507654A (ja) | 2006-03-02 |
JP4516749B2 true JP4516749B2 (ja) | 2010-08-04 |
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JP2003539082A Expired - Fee Related JP4516749B2 (ja) | 2001-10-22 | 2002-10-21 | 反射層を有するダイオードの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (6) | US6949395B2 (ja) |
EP (2) | EP1459357A4 (ja) |
JP (1) | JP4516749B2 (ja) |
KR (1) | KR100902894B1 (ja) |
WO (1) | WO2003036691A2 (ja) |
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US20030077847A1 (en) | 2003-04-24 |
US20140273322A1 (en) | 2014-09-18 |
US9406837B2 (en) | 2016-08-02 |
US8236585B2 (en) | 2012-08-07 |
WO2003036691A3 (en) | 2003-06-05 |
US7785908B2 (en) | 2010-08-31 |
EP2197022A2 (en) | 2010-06-16 |
US20120322176A1 (en) | 2012-12-20 |
JP2006507654A (ja) | 2006-03-02 |
US6949395B2 (en) | 2005-09-27 |
US20070172973A1 (en) | 2007-07-26 |
US20100285621A1 (en) | 2010-11-11 |
US8759129B2 (en) | 2014-06-24 |
EP1459357A2 (en) | 2004-09-22 |
EP1459357A4 (en) | 2006-10-25 |
US7682854B2 (en) | 2010-03-23 |
WO2003036691A2 (en) | 2003-05-01 |
KR20040063128A (ko) | 2004-07-12 |
US20060006400A1 (en) | 2006-01-12 |
EP2197022A3 (en) | 2010-09-29 |
KR100902894B1 (ko) | 2009-06-16 |
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