JP4459064B2 - 固体撮像装置、その制御方法及びカメラ - Google Patents

固体撮像装置、その制御方法及びカメラ Download PDF

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Publication number
JP4459064B2
JP4459064B2 JP2005008123A JP2005008123A JP4459064B2 JP 4459064 B2 JP4459064 B2 JP 4459064B2 JP 2005008123 A JP2005008123 A JP 2005008123A JP 2005008123 A JP2005008123 A JP 2005008123A JP 4459064 B2 JP4459064 B2 JP 4459064B2
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Japan
Prior art keywords
photoelectric conversion
conversion unit
transfer transistor
charge
floating diffusion
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Expired - Fee Related
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JP2005008123A
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English (en)
Japanese (ja)
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JP2006197382A (ja
JP2006197382A5 (enExample
Inventor
彰 沖田
徹 小泉
勇武 上野
克仁 櫻井
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005008123A priority Critical patent/JP4459064B2/ja
Priority to US11/326,416 priority patent/US7872286B2/en
Priority to CNB2006100051210A priority patent/CN100518254C/zh
Priority to EP06100267A priority patent/EP1681856A3/en
Publication of JP2006197382A publication Critical patent/JP2006197382A/ja
Publication of JP2006197382A5 publication Critical patent/JP2006197382A5/ja
Application granted granted Critical
Publication of JP4459064B2 publication Critical patent/JP4459064B2/ja
Priority to US12/960,701 priority patent/US8883526B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/741—Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Computer Vision & Pattern Recognition (AREA)
JP2005008123A 2005-01-14 2005-01-14 固体撮像装置、その制御方法及びカメラ Expired - Fee Related JP4459064B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005008123A JP4459064B2 (ja) 2005-01-14 2005-01-14 固体撮像装置、その制御方法及びカメラ
US11/326,416 US7872286B2 (en) 2005-01-14 2006-01-06 Image pickup device, its control method, and camera
CNB2006100051210A CN100518254C (zh) 2005-01-14 2006-01-12 图像拾取装置、其控制方法和照相机
EP06100267A EP1681856A3 (en) 2005-01-14 2006-01-12 Image pickup device, its control method, and camera
US12/960,701 US8883526B2 (en) 2005-01-14 2010-12-06 Image pickup device, its control method, and camera

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005008123A JP4459064B2 (ja) 2005-01-14 2005-01-14 固体撮像装置、その制御方法及びカメラ

Publications (3)

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JP2006197382A JP2006197382A (ja) 2006-07-27
JP2006197382A5 JP2006197382A5 (enExample) 2008-02-28
JP4459064B2 true JP4459064B2 (ja) 2010-04-28

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US (2) US7872286B2 (enExample)
EP (1) EP1681856A3 (enExample)
JP (1) JP4459064B2 (enExample)
CN (1) CN100518254C (enExample)

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