JP4453138B2 - 化学増幅型ポジ型レジスト組成物 - Google Patents

化学増幅型ポジ型レジスト組成物 Download PDF

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Publication number
JP4453138B2
JP4453138B2 JP36472699A JP36472699A JP4453138B2 JP 4453138 B2 JP4453138 B2 JP 4453138B2 JP 36472699 A JP36472699 A JP 36472699A JP 36472699 A JP36472699 A JP 36472699A JP 4453138 B2 JP4453138 B2 JP 4453138B2
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JP
Japan
Prior art keywords
adamantyl
meth
acrylate
resin
alkyl
Prior art date
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Expired - Fee Related
Application number
JP36472699A
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English (en)
Japanese (ja)
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JP2001183836A (ja
JP2001183836A5 (enExample
Inventor
保則 上谷
浩晃 藤島
佳幸 高田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Priority to JP36472699A priority Critical patent/JP4453138B2/ja
Priority to DE10063064A priority patent/DE10063064A1/de
Priority to TW089127065A priority patent/TWI227378B/zh
Priority to KR1020000079000A priority patent/KR100750815B1/ko
Priority to GB0031072A priority patent/GB2358256B/en
Priority to US09/741,438 priority patent/US6495306B2/en
Publication of JP2001183836A publication Critical patent/JP2001183836A/ja
Publication of JP2001183836A5 publication Critical patent/JP2001183836A5/ja
Application granted granted Critical
Publication of JP4453138B2 publication Critical patent/JP4453138B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP36472699A 1999-12-22 1999-12-22 化学増幅型ポジ型レジスト組成物 Expired - Fee Related JP4453138B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP36472699A JP4453138B2 (ja) 1999-12-22 1999-12-22 化学増幅型ポジ型レジスト組成物
TW089127065A TWI227378B (en) 1999-12-22 2000-12-18 Chemically amplified positive resist composition
DE10063064A DE10063064A1 (de) 1999-12-22 2000-12-18 Chemisch verstärkte positiv arbeitende Resistzusammensetzung
GB0031072A GB2358256B (en) 1999-12-22 2000-12-20 Chemically amplified positive resist composition
KR1020000079000A KR100750815B1 (ko) 1999-12-22 2000-12-20 화학 증폭형 포지티브 레지스트 조성물
US09/741,438 US6495306B2 (en) 1999-12-22 2000-12-21 Chemically amplified positive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36472699A JP4453138B2 (ja) 1999-12-22 1999-12-22 化学増幅型ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2001183836A JP2001183836A (ja) 2001-07-06
JP2001183836A5 JP2001183836A5 (enExample) 2006-12-14
JP4453138B2 true JP4453138B2 (ja) 2010-04-21

Family

ID=18482519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36472699A Expired - Fee Related JP4453138B2 (ja) 1999-12-22 1999-12-22 化学増幅型ポジ型レジスト組成物

Country Status (6)

Country Link
US (1) US6495306B2 (enExample)
JP (1) JP4453138B2 (enExample)
KR (1) KR100750815B1 (enExample)
DE (1) DE10063064A1 (enExample)
GB (1) GB2358256B (enExample)
TW (1) TWI227378B (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100498440B1 (ko) * 1999-11-23 2005-07-01 삼성전자주식회사 백본이 환상 구조를 가지는 감광성 폴리머와 이를포함하는 레지스트 조성물
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4329214B2 (ja) * 2000-03-28 2009-09-09 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4576737B2 (ja) * 2000-06-09 2010-11-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2002030118A (ja) * 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
US6727039B2 (en) * 2000-09-25 2004-04-27 Fuji Photo Film Co., Ltd. Positive photoresist composition
TW538316B (en) * 2001-01-19 2003-06-21 Sumitomo Chemical Co Chemical amplifying type positive resist composition
JP2002357905A (ja) * 2001-03-28 2002-12-13 Sumitomo Chem Co Ltd レジスト組成物
EP1267210B1 (en) 2001-06-12 2018-02-21 FUJIFILM Corporation Positive resist composition
US6844133B2 (en) * 2001-08-31 2005-01-18 Shin-Etsu Chemical Co., Ltd. Polymer, resist composition and patterning process
JP3841399B2 (ja) 2002-02-21 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
US7160669B2 (en) * 2002-10-16 2007-01-09 Sumitomo Chemical Company, Limited Chemical amplification type resist composition
KR20050094828A (ko) * 2002-12-26 2005-09-28 도오꾜오까고오교 가부시끼가이샤 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
JP4434762B2 (ja) 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
JP2005099646A (ja) 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
JP2004333548A (ja) * 2003-04-30 2004-11-25 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物およびレジストパターン形成方法
JP4772288B2 (ja) 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP2005010488A (ja) * 2003-06-19 2005-01-13 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
JP4092571B2 (ja) * 2003-08-05 2008-05-28 信越化学工業株式会社 レジスト材料及びパターン形成方法
US20060240355A1 (en) * 2003-09-25 2006-10-26 Tomoyuki Ando Positive resist composition and resist laminate for low-acceleration electron beam and mehod of pattern formation
US7488565B2 (en) * 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
JP4188265B2 (ja) * 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP2005164633A (ja) * 2003-11-28 2005-06-23 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物及びレジストパターン形成方法
JP4279237B2 (ja) * 2004-05-28 2009-06-17 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP2005344009A (ja) * 2004-06-03 2005-12-15 Shin Etsu Chem Co Ltd レジスト材料用高分子化合物及びその製造方法並びに化学増幅ポジ型レジスト材料
JP2007003619A (ja) * 2005-06-21 2007-01-11 Fujifilm Holdings Corp 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いる化合物
US7927779B2 (en) * 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
JP4695941B2 (ja) * 2005-08-19 2011-06-08 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7776510B2 (en) * 2007-06-13 2010-08-17 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, compound and acid generator
JP5523854B2 (ja) * 2009-02-06 2014-06-18 住友化学株式会社 化学増幅型フォトレジスト組成物及びパターン形成方法
JP5884728B2 (ja) * 2010-04-01 2016-03-15 三菱瓦斯化学株式会社 アダマンチル（メタ）アクリル系モノマー及びそれを繰り返し単位に含む（メタ）アクリル系重合体

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3546679B2 (ja) * 1997-01-29 2004-07-28 住友化学工業株式会社 化学増幅型ポジ型レジスト組成物
KR100538968B1 (ko) * 1997-02-18 2006-07-11 후지 샤신 필름 가부시기가이샤 포지티브감광성조성물
JP3948795B2 (ja) * 1997-09-30 2007-07-25 ダイセル化学工業株式会社 放射線感光材料及びそれを用いたパターン形成方法
JP3972438B2 (ja) * 1998-01-26 2007-09-05 住友化学株式会社 化学増幅型のポジ型レジスト組成物
JP3738562B2 (ja) * 1998-02-19 2006-01-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
EP1000924A4 (en) * 1998-05-25 2005-01-05 Daicel Chem ACID SENSITIVE COMPOUND AND RESIN COMPOSITION FOR PHOTORESIN
JP4434358B2 (ja) * 1998-05-25 2010-03-17 ダイセル化学工業株式会社 フォトレジスト用化合物およびフォトレジスト用樹脂組成物
EP1443363B1 (en) * 1998-05-25 2013-07-10 Daicel Chemical Industries, Ltd. Photoresist composition
JP3810957B2 (ja) * 1998-08-06 2006-08-16 株式会社東芝 レジスト用樹脂、レジスト組成物およびそれを用いたパターン形成方法
JP3876571B2 (ja) * 1998-08-26 2007-01-31 住友化学株式会社 化学増幅型ポジ型レジスト組成物
CN1190706C (zh) * 1998-08-26 2005-02-23 住友化学工业株式会社 一种化学增强型正光刻胶组合物
US6303266B1 (en) * 1998-09-24 2001-10-16 Kabushiki Kaisha Toshiba Resin useful for resist, resist composition and pattern forming process using the same
JP3890380B2 (ja) * 1999-05-28 2007-03-07 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP4585636B2 (ja) * 1999-09-30 2010-11-24 ダイセル化学工業株式会社 アクリル系単量体の重合方法
JP2002006501A (ja) * 1999-11-09 2002-01-09 Sumitomo Chem Co Ltd 化学増幅型レジスト組成物

Also Published As

Publication number Publication date
JP2001183836A (ja) 2001-07-06
US6495306B2 (en) 2002-12-17
GB0031072D0 (en) 2001-01-31
DE10063064A1 (de) 2001-06-28
TWI227378B (en) 2005-02-01
GB2358256B (en) 2001-12-12
US20010014428A1 (en) 2001-08-16
KR100750815B1 (ko) 2007-08-22
KR20010062537A (ko) 2001-07-07
GB2358256A (en) 2001-07-18

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