JP4451371B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP4451371B2
JP4451371B2 JP2005298361A JP2005298361A JP4451371B2 JP 4451371 B2 JP4451371 B2 JP 4451371B2 JP 2005298361 A JP2005298361 A JP 2005298361A JP 2005298361 A JP2005298361 A JP 2005298361A JP 4451371 B2 JP4451371 B2 JP 4451371B2
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JP
Japan
Prior art keywords
nitride semiconductor
face
layer
adhesion layer
semiconductor laser
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Expired - Lifetime
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JP2005298361A
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English (en)
Japanese (ja)
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JP2006203162A (ja
JP2006203162A5 (enExample
Inventor
佳伸 川口
雅文 近藤
剛 神川
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Sharp Corp
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Sharp Corp
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Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2005298361A priority Critical patent/JP4451371B2/ja
Priority to CN 200510136195 priority patent/CN1805230B/zh
Priority to CN201110082164.XA priority patent/CN102170090B/zh
Priority to US11/311,138 priority patent/US7701994B2/en
Publication of JP2006203162A publication Critical patent/JP2006203162A/ja
Publication of JP2006203162A5 publication Critical patent/JP2006203162A5/ja
Priority to US12/659,149 priority patent/US7820542B2/en
Application granted granted Critical
Publication of JP4451371B2 publication Critical patent/JP4451371B2/ja
Priority to US12/923,334 priority patent/US8129732B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Vapour Deposition (AREA)
JP2005298361A 2004-12-20 2005-10-13 窒化物半導体レーザ素子 Expired - Lifetime JP4451371B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005298361A JP4451371B2 (ja) 2004-12-20 2005-10-13 窒化物半導体レーザ素子
CN 200510136195 CN1805230B (zh) 2004-12-20 2005-12-20 氮化物半导体发光元件及其制造方法
CN201110082164.XA CN102170090B (zh) 2004-12-20 2005-12-20 氮化物半导体发光元件
US11/311,138 US7701994B2 (en) 2004-12-20 2005-12-20 Nitride semiconductor light-emitting device and method for fabrication thereof
US12/659,149 US7820542B2 (en) 2004-12-20 2010-02-26 Nitride semiconductor light-emitting device and method for fabrication thereof
US12/923,334 US8129732B2 (en) 2004-12-20 2010-09-15 Nitride semiconductor light-emitting device and method for fabrication thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004367005 2004-12-20
JP2005298361A JP4451371B2 (ja) 2004-12-20 2005-10-13 窒化物半導体レーザ素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009143037A Division JP2009206526A (ja) 2004-12-20 2009-06-16 窒化物半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2006203162A JP2006203162A (ja) 2006-08-03
JP2006203162A5 JP2006203162A5 (enExample) 2009-02-05
JP4451371B2 true JP4451371B2 (ja) 2010-04-14

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Family Applications (1)

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JP2005298361A Expired - Lifetime JP4451371B2 (ja) 2004-12-20 2005-10-13 窒化物半導体レーザ素子

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Country Link
US (3) US7701994B2 (enExample)
JP (1) JP4451371B2 (enExample)
CN (1) CN102170090B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103814A (ja) * 2005-10-07 2007-04-19 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP2012044230A (ja) * 2011-11-30 2012-03-01 Sharp Corp 窒化物半導体発光素子

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JP4451371B2 (ja) * 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
JP5285835B2 (ja) * 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
KR100853241B1 (ko) * 2005-12-16 2008-08-20 샤프 가부시키가이샤 질화물 반도체 발광소자 및 질화물 반도체 레이저 소자의제조방법
JP2007201412A (ja) * 2005-12-27 2007-08-09 Sanyo Electric Co Ltd 半導体レーザ装置およびその製造方法
JP5004597B2 (ja) * 2006-03-06 2012-08-22 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5430826B2 (ja) * 2006-03-08 2014-03-05 シャープ株式会社 窒化物半導体レーザ素子
JP4444304B2 (ja) * 2006-04-24 2010-03-31 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
GB2439973A (en) * 2006-07-13 2008-01-16 Sharp Kk Modifying the optical properties of a nitride optoelectronic device
JP2008060472A (ja) * 2006-09-01 2008-03-13 Sumitomo Electric Ind Ltd 半導体レーザ及びその製造方法
JP4799339B2 (ja) * 2006-09-22 2011-10-26 シャープ株式会社 窒化物半導体発光素子
JP5011942B2 (ja) * 2006-10-17 2012-08-29 ソニー株式会社 半導体レーザの製造方法
JP5042609B2 (ja) * 2006-12-08 2012-10-03 シャープ株式会社 窒化物系半導体素子
JP4978454B2 (ja) * 2006-12-28 2012-07-18 日亜化学工業株式会社 窒化物半導体レーザ素子
JP2008227002A (ja) * 2007-03-09 2008-09-25 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2008218523A (ja) * 2007-02-28 2008-09-18 Nichia Chem Ind Ltd 窒化物半導体レーザ素子及びその製造方法
JP2008205171A (ja) * 2007-02-20 2008-09-04 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP5670009B2 (ja) * 2007-02-26 2015-02-18 日亜化学工業株式会社 窒化物半導体レーザ素子
JP5681338B2 (ja) * 2007-02-28 2015-03-04 日亜化学工業株式会社 窒化物半導体レーザ素子
JP5162926B2 (ja) * 2007-03-07 2013-03-13 三菱電機株式会社 半導体レーザ装置の製造方法
JP4946524B2 (ja) * 2007-03-08 2012-06-06 三菱電機株式会社 半導体レーザ装置
JP2008235790A (ja) * 2007-03-23 2008-10-02 Mitsubishi Electric Corp 半導体光素子の製造方法
JP5004642B2 (ja) * 2007-04-19 2012-08-22 三洋電機株式会社 半導体レーザ装置
JP4986714B2 (ja) * 2007-05-30 2012-07-25 三洋電機株式会社 窒化物系半導体レーザ素子およびその製造方法
JP5572919B2 (ja) * 2007-06-07 2014-08-20 日亜化学工業株式会社 窒化物半導体レーザ素子
JP5127644B2 (ja) * 2007-09-28 2013-01-23 三洋電機株式会社 窒化物系半導体レーザ素子
JP5127642B2 (ja) * 2007-09-28 2013-01-23 三洋電機株式会社 窒化物系半導体レーザ素子
JP4598040B2 (ja) * 2007-10-04 2010-12-15 シャープ株式会社 窒化物半導体レーザ素子
DE102008012859B4 (de) * 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
JP2009170801A (ja) * 2008-01-18 2009-07-30 Mitsubishi Electric Corp 半導体レーザ
JP2009176812A (ja) * 2008-01-22 2009-08-06 Mitsubishi Electric Corp 半導体レーザ
KR101461673B1 (ko) * 2008-02-11 2014-11-13 엘지전자 주식회사 반도체 레이저 다이오드 패키지 시스템 및 그 방법
JP5183516B2 (ja) * 2008-02-15 2013-04-17 三洋電機株式会社 半導体レーザ素子
JP5443356B2 (ja) 2008-07-10 2014-03-19 株式会社東芝 半導体レーザ装置
JP5193718B2 (ja) * 2008-07-18 2013-05-08 パナソニック株式会社 窒化物半導体レーザ装置
JP2010135516A (ja) * 2008-12-03 2010-06-17 Panasonic Corp 窒化物半導体発光装置
JP5383313B2 (ja) 2009-05-20 2014-01-08 パナソニック株式会社 窒化物半導体発光装置
JP4621791B2 (ja) 2009-06-11 2011-01-26 シャープ株式会社 窒化物半導体レーザ素子
JP5707772B2 (ja) 2010-08-06 2015-04-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
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CN102545046B (zh) * 2012-01-17 2013-05-01 东南大学 回音壁模微腔激光二极管的制备方法
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JP5491679B1 (ja) * 2012-06-29 2014-05-14 パナソニック株式会社 窒化物半導体発光素子

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103814A (ja) * 2005-10-07 2007-04-19 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP2012044230A (ja) * 2011-11-30 2012-03-01 Sharp Corp 窒化物半導体発光素子

Also Published As

Publication number Publication date
CN102170090A (zh) 2011-08-31
JP2006203162A (ja) 2006-08-03
CN102170090B (zh) 2013-04-03
US20100159626A1 (en) 2010-06-24
US20110007770A1 (en) 2011-01-13
US8129732B2 (en) 2012-03-06
US7701994B2 (en) 2010-04-20
US7820542B2 (en) 2010-10-26
US20060133442A1 (en) 2006-06-22

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