JP4447280B2 - 表面保護用シートおよび半導体ウエハの研削方法 - Google Patents
表面保護用シートおよび半導体ウエハの研削方法 Download PDFInfo
- Publication number
- JP4447280B2 JP4447280B2 JP2003356280A JP2003356280A JP4447280B2 JP 4447280 B2 JP4447280 B2 JP 4447280B2 JP 2003356280 A JP2003356280 A JP 2003356280A JP 2003356280 A JP2003356280 A JP 2003356280A JP 4447280 B2 JP4447280 B2 JP 4447280B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive layer
- pressure
- sensitive adhesive
- semiconductor wafer
- sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
- H10P72/7404—Wafer tapes, e.g. grinding or dicing support tapes the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
- H10P72/7404—Wafer tapes, e.g. grinding or dicing support tapes the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer
- H10P72/7406—Wafer tapes, e.g. grinding or dicing support tapes the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer the wafer tape being a laminate of four or more layers, e.g. including two or more additional layers beyond a base layer and an uppermost adhesive layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/204—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive coating being discontinuous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003356280A JP4447280B2 (ja) | 2003-10-16 | 2003-10-16 | 表面保護用シートおよび半導体ウエハの研削方法 |
| CNA2004800302222A CN1868040A (zh) | 2003-10-16 | 2004-10-14 | 表面保护用板以及半导体晶片的磨削方法 |
| PCT/JP2004/015131 WO2005038894A1 (ja) | 2003-10-16 | 2004-10-14 | 表面保護用シートおよび半導体ウエハの研削方法 |
| KR1020067009385A KR20060120113A (ko) | 2003-10-16 | 2004-10-14 | 표면보호용 시트 및 반도체 웨이퍼의 연삭방법 |
| US10/575,510 US7438631B2 (en) | 2003-10-16 | 2004-10-14 | Surface-protecting sheet and semiconductor wafer lapping method |
| EP04792363A EP1681713A4 (en) | 2003-10-16 | 2004-10-14 | SURFACE PROTECTION FILM AND SEMICONDUCTOR WAFER LAPPING METHOD |
| TW093131308A TWI349315B (en) | 2003-10-16 | 2004-10-15 | Surface protecting sheet and method of grinding semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003356280A JP4447280B2 (ja) | 2003-10-16 | 2003-10-16 | 表面保護用シートおよび半導体ウエハの研削方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005123382A JP2005123382A (ja) | 2005-05-12 |
| JP2005123382A5 JP2005123382A5 (enExample) | 2006-09-28 |
| JP4447280B2 true JP4447280B2 (ja) | 2010-04-07 |
Family
ID=34463200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003356280A Expired - Lifetime JP4447280B2 (ja) | 2003-10-16 | 2003-10-16 | 表面保護用シートおよび半導体ウエハの研削方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7438631B2 (enExample) |
| EP (1) | EP1681713A4 (enExample) |
| JP (1) | JP4447280B2 (enExample) |
| KR (1) | KR20060120113A (enExample) |
| CN (1) | CN1868040A (enExample) |
| TW (1) | TWI349315B (enExample) |
| WO (1) | WO2005038894A1 (enExample) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4647228B2 (ja) * | 2004-04-01 | 2011-03-09 | 株式会社ディスコ | ウェーハの加工方法 |
| DE102004018249B3 (de) * | 2004-04-15 | 2006-03-16 | Infineon Technologies Ag | Verfahren zum Bearbeiten eines Werkstücks an einem Werkstückträger |
| JP5063026B2 (ja) * | 2005-05-10 | 2012-10-31 | リンテック株式会社 | 半導体ウエハ加工用シートおよび半導体ウエハの加工方法 |
| JP4808458B2 (ja) * | 2005-09-28 | 2011-11-02 | 株式会社ディスコ | ウェハ加工方法 |
| JP4749849B2 (ja) * | 2005-11-28 | 2011-08-17 | 株式会社ディスコ | ウェーハの分割方法 |
| JP4749851B2 (ja) * | 2005-11-29 | 2011-08-17 | 株式会社ディスコ | ウェーハの分割方法 |
| DE102006000687B4 (de) | 2006-01-03 | 2010-09-09 | Thallner, Erich, Dipl.-Ing. | Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers |
| JP4836827B2 (ja) * | 2007-02-22 | 2011-12-14 | 日東電工株式会社 | 粘着テープ貼付け装置 |
| SG147330A1 (en) * | 2007-04-19 | 2008-11-28 | Micron Technology Inc | Semiconductor workpiece carriers and methods for processing semiconductor workpieces |
| JP5379377B2 (ja) * | 2007-12-10 | 2013-12-25 | リンテック株式会社 | 表面保護用シートおよび半導体ウエハの研削方法 |
| WO2009094558A2 (en) * | 2008-01-24 | 2009-07-30 | Brewer Science Inc. | Method for reversibly mounting a device wafer to a carrier substrate |
| JP5361200B2 (ja) * | 2008-01-30 | 2013-12-04 | 株式会社東京精密 | バンプが形成されたウェーハを処理するウェーハ処理方法 |
| JP5197037B2 (ja) * | 2008-01-30 | 2013-05-15 | 株式会社東京精密 | バンプが形成されたウェーハを処理するウェーハ処理方法 |
| JP5399648B2 (ja) * | 2008-03-31 | 2014-01-29 | リンテック株式会社 | 接着シート及びこれを用いた半導体ウエハの処理方法 |
| JP2010027686A (ja) * | 2008-07-15 | 2010-02-04 | Lintec Corp | 表面保護用シートおよび半導体ウエハの研削方法 |
| EP2230683B1 (de) | 2009-03-18 | 2016-03-16 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Wafers von einem Träger |
| EP2706561B1 (de) | 2009-09-01 | 2017-04-05 | EV Group GmbH | Verfahren zum konzentrischen Ablösen eines Produktsubstrats (z.B. eines Halbleiterwafers) von einem Trägersubstrat durch Verformung eines auf einem Filmrahmen montierten flexiblen Films |
| EP2381464B1 (de) | 2010-04-23 | 2012-09-05 | EV Group GmbH | Vorrichtung und Verfahren zum Ablösen eines Produktsubstrats von einem Trägersubstrat |
| US8852391B2 (en) | 2010-06-21 | 2014-10-07 | Brewer Science Inc. | Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate |
| US9263314B2 (en) * | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
| JP5586093B2 (ja) * | 2010-09-09 | 2014-09-10 | リンテック株式会社 | シート貼付装置及び貼付方法 |
| JP5572045B2 (ja) * | 2010-09-09 | 2014-08-13 | リンテック株式会社 | シート貼付装置及び貼付方法 |
| JP2012074659A (ja) * | 2010-09-30 | 2012-04-12 | Disco Abrasive Syst Ltd | 研削方法 |
| JP5762781B2 (ja) | 2011-03-22 | 2015-08-12 | リンテック株式会社 | 基材フィルムおよび該基材フィルムを備えた粘着シート |
| JP5282113B2 (ja) | 2011-03-22 | 2013-09-04 | リンテック株式会社 | 基材フィルムおよび該基材フィルムを備えた粘着シート |
| US9390968B2 (en) * | 2011-09-29 | 2016-07-12 | Intel Corporation | Low temperature thin wafer backside vacuum process with backgrinding tape |
| US9580776B2 (en) | 2011-09-30 | 2017-02-28 | Intel Corporation | Tungsten gates for non-planar transistors |
| KR20170106657A (ko) | 2011-09-30 | 2017-09-21 | 인텔 코포레이션 | 집적회로 구조 및 집적회로 구조의 제조 방법 |
| KR101735976B1 (ko) | 2011-09-30 | 2017-05-15 | 인텔 코포레이션 | 트랜지스터 게이트용 캡핑 유전체 구조를 형성하는 방법 |
| DE112011105702T5 (de) | 2011-10-01 | 2014-07-17 | Intel Corporation | Source-/Drain-Kontakte für nicht planare Transistoren |
| WO2013095527A1 (en) * | 2011-12-22 | 2013-06-27 | Intel Corporation | Electrostatic discharge compliant patterned adhesive tape |
| DE102012101237A1 (de) | 2012-02-16 | 2013-08-22 | Ev Group E. Thallner Gmbh | Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat |
| JP5591859B2 (ja) * | 2012-03-23 | 2014-09-17 | 株式会社東芝 | 基板の分離方法及び分離装置 |
| JP5997477B2 (ja) * | 2012-03-30 | 2016-09-28 | リンテック株式会社 | 表面保護用シート |
| JP2013235911A (ja) * | 2012-05-08 | 2013-11-21 | Disco Abrasive Syst Ltd | 保護部材 |
| JP2013235910A (ja) * | 2012-05-08 | 2013-11-21 | Disco Abrasive Syst Ltd | 保護部材 |
| JP2013243195A (ja) * | 2012-05-18 | 2013-12-05 | Disco Abrasive Syst Ltd | 保護テープ |
| JP2013243286A (ja) * | 2012-05-22 | 2013-12-05 | Disco Abrasive Syst Ltd | 粘着テープ |
| JP6045817B2 (ja) * | 2012-05-28 | 2016-12-14 | 株式会社ディスコ | 貼着方法 |
| JP6061590B2 (ja) * | 2012-09-27 | 2017-01-18 | 株式会社ディスコ | 表面保護部材および加工方法 |
| TWI500090B (zh) * | 2012-11-13 | 2015-09-11 | 矽品精密工業股份有限公司 | 半導體封裝件之製法 |
| CN102962762A (zh) * | 2012-12-07 | 2013-03-13 | 日月光半导体制造股份有限公司 | 晶圆研磨用承载盘组件 |
| US9335367B2 (en) | 2013-08-27 | 2016-05-10 | International Business Machines Corporation | Implementing low temperature wafer test |
| JP6230354B2 (ja) * | 2013-09-26 | 2017-11-15 | 株式会社ディスコ | デバイスウェーハの加工方法 |
| US9539699B2 (en) * | 2014-08-28 | 2017-01-10 | Ebara Corporation | Polishing method |
| JP6648907B2 (ja) * | 2014-10-20 | 2020-02-14 | リンテック株式会社 | 表面保護シート用基材及び表面保護シート |
| WO2016076414A1 (ja) * | 2014-11-14 | 2016-05-19 | 東レエンジニアリング株式会社 | 半導体チップ実装方法および半導体チップ実装用保護シート |
| WO2016107630A1 (en) * | 2014-12-29 | 2016-07-07 | Karl Heinz Priewasser | Protective sheeting for use in processing a semiconductor-sized wafer and semiconductor-sized wafer processing method |
| JP6747696B2 (ja) * | 2015-05-13 | 2020-08-26 | リンテック株式会社 | 表面保護フィルム |
| KR101676025B1 (ko) | 2016-06-30 | 2016-11-15 | (주) 화인테크놀리지 | 반도체 웨이퍼의 하프커팅 후 이면 연삭 가공용 자외선 경화형 점착시트 |
| US10096460B2 (en) | 2016-08-02 | 2018-10-09 | Semiconductor Components Industries, Llc | Semiconductor wafer and method of wafer thinning using grinding phase and separation phase |
| JP6850099B2 (ja) * | 2016-09-23 | 2021-03-31 | 株式会社岡本工作機械製作所 | 半導体装置の製造方法及び半導体製造装置 |
| US10809293B2 (en) * | 2016-10-27 | 2020-10-20 | Mitsui Chemicals Tochello, Inc. | Method for manufacturing electronic apparatus, adhesive film for manufacturing electronic apparatus, and electronic component testing apparatus |
| KR102345923B1 (ko) * | 2017-05-18 | 2022-01-03 | 가부시기가이샤 디스코 | 웨이퍼를 프로세싱하는데 사용하기 위한 보호 시팅, 웨이퍼에 대한 핸들링 시스템, 및 웨이퍼 및 보호 시팅의 조합체 |
| JP2019212803A (ja) * | 2018-06-06 | 2019-12-12 | 信越ポリマー株式会社 | ウェーハ用スペーサ |
| JP2020035918A (ja) * | 2018-08-30 | 2020-03-05 | 株式会社ディスコ | 被加工物の加工方法 |
| WO2020196795A1 (ja) * | 2019-03-27 | 2020-10-01 | 三井化学東セロ株式会社 | 貼着装置 |
| JP7451028B2 (ja) | 2019-12-27 | 2024-03-18 | 株式会社ディスコ | 保護シートの配設方法 |
| JP7455470B2 (ja) * | 2020-03-13 | 2024-03-26 | 株式会社ディスコ | ウェーハの加工方法 |
| JP7582798B2 (ja) * | 2020-06-09 | 2024-11-13 | 株式会社東京精密 | 加工装置及び方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0228924A (ja) * | 1988-07-19 | 1990-01-31 | Oki Electric Ind Co Ltd | 半導体装置の製造方法およびそれに用いる保護具 |
| JPH0562950A (ja) * | 1991-08-29 | 1993-03-12 | Nitto Denko Corp | 半導体ウエハへの保護テープ貼り付けおよび剥離方法 |
| JP2000071170A (ja) | 1998-08-28 | 2000-03-07 | Nitta Ind Corp | 研磨用ウエハ保持部材及びそのウエハ保持部材の研磨機定盤への脱着方法 |
| US6688948B2 (en) * | 1999-07-07 | 2004-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer surface protection method |
| JP2001196404A (ja) | 2000-01-11 | 2001-07-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP3768069B2 (ja) | 2000-05-16 | 2006-04-19 | 信越半導体株式会社 | 半導体ウエーハの薄型化方法 |
| US7059942B2 (en) * | 2000-09-27 | 2006-06-13 | Strasbaugh | Method of backgrinding wafers while leaving backgrinding tape on a chuck |
| JP2003051473A (ja) * | 2001-08-03 | 2003-02-21 | Disco Abrasive Syst Ltd | 半導体ウェーハの裏面研削方法 |
| SG120887A1 (en) * | 2001-12-03 | 2006-04-26 | Disco Corp | Method of processing a semiconductor wafer and substrate for semiconductor wafers used in the same |
| JP2004079951A (ja) * | 2002-08-22 | 2004-03-11 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
| JP2004288725A (ja) | 2003-03-19 | 2004-10-14 | Citizen Watch Co Ltd | 半導体装置の製造方法,この製造方法に用いるシール部材及びこのシール部材の供給装置 |
| US7135124B2 (en) * | 2003-11-13 | 2006-11-14 | International Business Machines Corporation | Method for thinning wafers that have contact bumps |
-
2003
- 2003-10-16 JP JP2003356280A patent/JP4447280B2/ja not_active Expired - Lifetime
-
2004
- 2004-10-14 KR KR1020067009385A patent/KR20060120113A/ko not_active Withdrawn
- 2004-10-14 WO PCT/JP2004/015131 patent/WO2005038894A1/ja not_active Ceased
- 2004-10-14 US US10/575,510 patent/US7438631B2/en not_active Expired - Lifetime
- 2004-10-14 CN CNA2004800302222A patent/CN1868040A/zh active Pending
- 2004-10-14 EP EP04792363A patent/EP1681713A4/en not_active Withdrawn
- 2004-10-15 TW TW093131308A patent/TWI349315B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI349315B (en) | 2011-09-21 |
| EP1681713A1 (en) | 2006-07-19 |
| EP1681713A4 (en) | 2007-10-10 |
| US7438631B2 (en) | 2008-10-21 |
| US20070066184A1 (en) | 2007-03-22 |
| WO2005038894A1 (ja) | 2005-04-28 |
| TW200524057A (en) | 2005-07-16 |
| CN1868040A (zh) | 2006-11-22 |
| KR20060120113A (ko) | 2006-11-24 |
| JP2005123382A (ja) | 2005-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4447280B2 (ja) | 表面保護用シートおよび半導体ウエハの研削方法 | |
| JP4312419B2 (ja) | 半導体ウエハの加工方法 | |
| JP5379377B2 (ja) | 表面保護用シートおよび半導体ウエハの研削方法 | |
| JP4219605B2 (ja) | 半導体ウエハ加工用粘着シートおよびその使用方法 | |
| JP3553551B2 (ja) | 半導体ウェハを用いた半導体装置の製造方法 | |
| KR20110087302A (ko) | 다이싱용 표면 보호 테이프 및 다이싱용 표면 보호 테이프의 박리 제거 방법 | |
| JP2010027685A (ja) | 半導体ウエハの研削方法 | |
| JP2009188010A (ja) | 脆質部材用支持体および脆質部材の処理方法 | |
| JP2005116610A (ja) | 半導体ウエハの加工方法および半導体ウエハ加工用粘着シート | |
| KR20170008756A (ko) | 다이본드 다이싱 시트 | |
| JP4904432B1 (ja) | ウエハ加工用テープ | |
| JP4307825B2 (ja) | 半導体ウエハの保護構造、半導体ウエハの保護方法、これらに用いる積層保護シートおよび半導体ウエハの加工方法 | |
| JP2008311513A (ja) | 表面保護用シートの支持構造および半導体ウエハの研削方法 | |
| JP2010027686A (ja) | 表面保護用シートおよび半導体ウエハの研削方法 | |
| WO2021251420A1 (ja) | 電子装置の製造方法 | |
| WO2021251422A1 (ja) | 電子装置の製造方法 | |
| JP5323331B2 (ja) | ウェハ加工用シート | |
| JP2009130333A (ja) | 半導体装置の製造方法 | |
| JP3535968B2 (ja) | チップ体の製造方法およびチップ体製造用粘着シート | |
| JP5598865B2 (ja) | ウエハ加工用テープ | |
| WO2015046069A1 (ja) | ダイシング-ダイボンディングテープ及び粘接着剤層付き半導体チップの製造方法 | |
| JP7556963B2 (ja) | バックグラインド用粘着性フィルムおよび電子装置の製造方法 | |
| WO2022019166A1 (ja) | 電子装置の製造方法 | |
| WO2022019160A1 (ja) | 電子装置の製造方法 | |
| KR20240005910A (ko) | 전자 장치의 제조 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060811 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060811 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090929 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091126 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100112 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100120 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130129 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4447280 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130129 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140129 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |