JP6850099B2 - 半導体装置の製造方法及び半導体製造装置 - Google Patents
半導体装置の製造方法及び半導体製造装置 Download PDFInfo
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/002—Machines or devices using grinding or polishing belts; Accessories therefor for grinding edges or bevels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/008—Machines comprising two or more tools or having several working posts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
- B24B55/08—Dust extraction equipment on grinding or polishing machines specially designed for belt grinding machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02005—Preparing bulk and homogeneous wafers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
図1は、本発明の実施形態に係る半導体装置の製造工程を示すフローチャートであり、詳しくは、表面10a(図5(A)参照)に回路が形成された半導体ウエハ10(図5(A)参照)を薄化する工程に関するフローチャートである。本実施形態に係る半導体装置の製造方法は、特に、表面10aに凸形状が形成された半導体ウエハ10の裏面10b(図5(A)参照)を研削する場合に適している。
図4(A)は、接着剤研削装置120の概略構成を示す正面図であり、図4(B)は、同平面図である。なお、図4では、既に説明した実施形態と同一若しくは同様の作用、効果を奏する構成要素については、同一の符号を付している。
図5(A)は、表面10aに回路が形成された半導体ウエハ10の概略図であり、図5(B)は、表面10aに接着剤12が塗布された半導体ウエハ10の概略図であり、図5(C)は、接着剤12が研削される状態を示す半導体ウエハ10の概略図である。また、図6(A)は、端部がトリミングされる状態を示す半導体ウエハ10の概略図であり、図6(B)は、サポート基板13が貼り付けられた半導体ウエハ10の概略図であり、図6(C)は、裏面10bが研削される状態を示す半導体ウエハ10の概略図である。
そして、接着剤12が塗布された後、使用している接着剤12の種類に応じた所定の方法によって、接着剤12を硬化させる処理が行われる。
具体的には、半導体ウエハ10の裏面10bのシリコン面より露出した貫通電極の頭面にのみ選択的にキャップ層を形成するニッケル(Ni)無電解メッキが行われても良い。ニッケル無電解メッキ液は、ニッケル(Ni)の他に硼素(B)、燐(P)またはコバルト(Co)等を含有していても良い。
そして、貫通電極の第二次頭出し加工が行われた半導体ウエハ10の裏面10bに絶縁膜(insulator)を堆積する処理が行われ、その後に、CMP組成物、研磨バフを用いて研磨加工が行われ、貫通電極の頭面の前記絶縁膜が除去されても良い。
10a 表面
10b 裏面
11 バンプ
12 接着剤
13 サポート基板
20 接着剤研削装置
21 研削ヘッド
22 といし
27 洗浄液噴射装置
28 噴射ノズル
40 エッジトリミング装置
41 トリミングヘッド
42 研磨テープ
120 接着剤研削装置
Claims (6)
- 凸形状が形成された半導体ウエハの表面に接着剤を塗布する工程と、
前記半導体ウエハを回転させ、前記半導体ウエハに塗布された前記接着剤の表面を回転するカップホイール型研削といしで研削する接着剤研削工程と、
前記接着剤が塗布された前記半導体ウエハの周囲端部を前記接着剤と共にトリミングする端部トリミング工程と、
前記接着剤の表面が研削されて前記周囲端部がトリミングされた前記半導体ウエハを、前記接着剤を介してサポート基板に貼付する工程と、
前記サポート基板に貼付された前記半導体ウエハの裏面を研削する工程と、を具備し、
前記接着剤研削工程及び前記端部トリミング工程は、共用する1つのチャックテーブルに前記半導体ウエハが吸着保持された状態で実行されることを特徴とする半導体装置の製造方法。 - 前記接着剤研削工程では、前記接着剤の表面を研削する前記カップホイール型研削といしに洗浄水を吹き付けながら前記接着剤の表面を研削することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記洗浄水は、前記カップホイール型研削といしの研削加工に供していないといしの刃先に吹き付けられることを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記半導体ウエハは、貫通電極を有し、
前記半導体ウエハの裏面を研削する工程では、前記半導体ウエハの裏面を研削するウエハ研削工具に洗浄水を吹き付けながら前記半導体ウエハと前記貫通電極を同時に研削することを特徴とする請求項1ないし請求項3の何れか1項に記載の半導体装置の製造方法。 - 表面に凸形状を有し前記表面に接着剤が塗布された半導体ウエハを吸着保持して回転するチャックテーブルと、
前記半導体ウエハが前記チャックテーブルに吸着保持され回転する状態で前記接着剤の表面を回転しながら研削するカップホイール型研削といしと、
前記半導体ウエハが前記チャックテーブルに吸着保持された状態で前記半導体ウエハの周囲端部を前記接着剤と共にトリミングする研磨テープと、を備え、
前記研磨テープは、前記接着剤の表面を研削している前記カップホイール型研削といしの回転領域外側の前記半導体ウエハの周囲端部に摺擦可能な位置に設けられていることを特徴とする半導体製造装置。 - 前記カップホイール型研削といしに洗浄水を吹き付ける洗浄液噴射装置を備えることを特徴とする請求項5に記載の半導体製造装置。
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