JP4441607B2 - 半導体基板を不動態化する方法 - Google Patents

半導体基板を不動態化する方法 Download PDF

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Publication number
JP4441607B2
JP4441607B2 JP2003143908A JP2003143908A JP4441607B2 JP 4441607 B2 JP4441607 B2 JP 4441607B2 JP 2003143908 A JP2003143908 A JP 2003143908A JP 2003143908 A JP2003143908 A JP 2003143908A JP 4441607 B2 JP4441607 B2 JP 4441607B2
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JP
Japan
Prior art keywords
substrate
plasma
layer
silane
ammonia
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Expired - Fee Related
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JP2003143908A
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English (en)
Japanese (ja)
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JP2005005280A (ja
JP2005005280A5 (enExample
Inventor
マルチン、ディナント、ビーカー
フランシスカス、コルネリウス、ディングス
マウリティウス、コルネリス、マリア、バン、デ、サンデン
ミカエル、アドリアヌス、テオドルス、ホムプス
ウイルヘルムス、マティース、マリエ、ケセルス
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OTB Solar BV
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OTB Solar BV
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Publication of JP2005005280A publication Critical patent/JP2005005280A/ja
Publication of JP2005005280A5 publication Critical patent/JP2005005280A5/ja
Application granted granted Critical
Publication of JP4441607B2 publication Critical patent/JP4441607B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP2003143908A 2002-05-21 2003-05-21 半導体基板を不動態化する方法 Expired - Fee Related JP4441607B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL1020634A NL1020634C2 (nl) 2002-05-21 2002-05-21 Werkwijze voor het passiveren van een halfgeleider substraat.

Publications (3)

Publication Number Publication Date
JP2005005280A JP2005005280A (ja) 2005-01-06
JP2005005280A5 JP2005005280A5 (enExample) 2009-11-19
JP4441607B2 true JP4441607B2 (ja) 2010-03-31

Family

ID=29398575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003143908A Expired - Fee Related JP4441607B2 (ja) 2002-05-21 2003-05-21 半導体基板を不動態化する方法

Country Status (6)

Country Link
US (1) US6946404B2 (enExample)
EP (1) EP1365042A1 (enExample)
JP (1) JP4441607B2 (enExample)
KR (1) KR101056300B1 (enExample)
NL (1) NL1020634C2 (enExample)
TW (1) TWI252523B (enExample)

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US7198832B2 (en) 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
US6623861B2 (en) 2001-04-16 2003-09-23 Battelle Memorial Institute Multilayer plastic substrates
US20090191342A1 (en) * 1999-10-25 2009-07-30 Vitex Systems, Inc. Method for edge sealing barrier films
US20100330748A1 (en) 1999-10-25 2010-12-30 Xi Chu Method of encapsulating an environmentally sensitive device
US6866901B2 (en) * 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US6413645B1 (en) 2000-04-20 2002-07-02 Battelle Memorial Institute Ultrabarrier substrates
US20070196682A1 (en) * 1999-10-25 2007-08-23 Visser Robert J Three dimensional multilayer barrier and method of making
US20090208754A1 (en) * 2001-09-28 2009-08-20 Vitex Systems, Inc. Method for edge sealing barrier films
US8808457B2 (en) 2002-04-15 2014-08-19 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US8900366B2 (en) * 2002-04-15 2014-12-02 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
NL1020923C2 (nl) * 2002-06-21 2003-12-23 Otb Group Bv Werkwijze alsmede inrichting voor het vervaardigen van een katalysator.
US7648925B2 (en) * 2003-04-11 2010-01-19 Vitex Systems, Inc. Multilayer barrier stacks and methods of making multilayer barrier stacks
US7510913B2 (en) * 2003-04-11 2009-03-31 Vitex Systems, Inc. Method of making an encapsulated plasma sensitive device
NL1025096C2 (nl) * 2003-12-21 2005-06-23 Otb Group Bv Werkwijze alsmede inrichting voor het vervaardigen van een functionele laag bestaande uit ten minste twee componenten.
NL1029647C2 (nl) * 2005-07-29 2007-01-30 Otb Group Bv Werkwijze voor het passiveren van ten minste een deel van een substraatoppervlak.
US7767498B2 (en) 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
DE102006043943A1 (de) * 2006-09-14 2008-03-27 Leybold Optics Gmbh Verfahren zum Aufbringen von Schichten auf Substraten mit gekrümmten Oberflächen
USH2207H1 (en) * 2007-01-05 2007-12-04 Bijker Martin D Additional post-glass-removal processes for enhanced cell efficiency in the production of solar cells
JP5095524B2 (ja) * 2008-06-26 2012-12-12 株式会社ユーテック プラズマｃｖｄ装置及び磁気記録媒体の製造方法
US7915154B2 (en) 2008-09-03 2011-03-29 Piwczyk Bernhard P Laser diffusion fabrication of solar cells
EP2365534A4 (en) * 2008-12-02 2014-04-02 Mitsubishi Electric Corp METHOD FOR PRODUCING A SOLAR BATTERY CELL
US9184410B2 (en) * 2008-12-22 2015-11-10 Samsung Display Co., Ltd. Encapsulated white OLEDs having enhanced optical output
US9337446B2 (en) * 2008-12-22 2016-05-10 Samsung Display Co., Ltd. Encapsulated RGB OLEDs having enhanced optical output
US20100167002A1 (en) * 2008-12-30 2010-07-01 Vitex Systems, Inc. Method for encapsulating environmentally sensitive devices
DE102009036982A1 (de) 2009-08-12 2011-02-17 Q-Cells Se Verfahren und Vorrichtung zur plasmaunterstützten Gasphasenabscheidung für photovoltaisches Element
US8590338B2 (en) * 2009-12-31 2013-11-26 Samsung Mobile Display Co., Ltd. Evaporator with internal restriction
US20120235274A1 (en) * 2011-03-14 2012-09-20 Doyle Brian S Semiconductor structure having an integrated double-wall capacitor for embedded dynamic random access memory (edram) and method to form the same

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Also Published As

Publication number Publication date
TW200400552A (en) 2004-01-01
US20040029334A1 (en) 2004-02-12
US6946404B2 (en) 2005-09-20
NL1020634C2 (nl) 2003-11-24
JP2005005280A (ja) 2005-01-06
TWI252523B (en) 2006-04-01
KR20030091733A (ko) 2003-12-03
KR101056300B1 (ko) 2011-08-11
EP1365042A1 (en) 2003-11-26

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