NL1020634C2 - Werkwijze voor het passiveren van een halfgeleider substraat. - Google Patents
Werkwijze voor het passiveren van een halfgeleider substraat. Download PDFInfo
- Publication number
- NL1020634C2 NL1020634C2 NL1020634A NL1020634A NL1020634C2 NL 1020634 C2 NL1020634 C2 NL 1020634C2 NL 1020634 A NL1020634 A NL 1020634A NL 1020634 A NL1020634 A NL 1020634A NL 1020634 C2 NL1020634 C2 NL 1020634C2
- Authority
- NL
- Netherlands
- Prior art keywords
- substrate
- plasma
- range
- treatment chamber
- source
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 76
- 238000000034 method Methods 0.000 title claims description 54
- 239000004065 semiconductor Substances 0.000 title claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 44
- 229910004205 SiNX Inorganic materials 0.000 claims description 25
- 229910021529 ammonia Inorganic materials 0.000 claims description 22
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 20
- 229910000077 silane Inorganic materials 0.000 claims description 20
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 11
- 238000002161 passivation Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910004469 SiHx Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000003678 scratch resistant effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/958—Passivation layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1020634A NL1020634C2 (nl) | 2002-05-21 | 2002-05-21 | Werkwijze voor het passiveren van een halfgeleider substraat. |
| TW092113743A TWI252523B (en) | 2002-05-21 | 2003-05-21 | Method for passivating a semiconductor substrate |
| EP03076530A EP1365042A1 (en) | 2002-05-21 | 2003-05-21 | Method for passivating a semiconductor substrate |
| JP2003143908A JP4441607B2 (ja) | 2002-05-21 | 2003-05-21 | 半導体基板を不動態化する方法 |
| KR1020030032409A KR101056300B1 (ko) | 2002-05-21 | 2003-05-21 | 반도체 기질을 부동태화하는 방법 |
| US10/452,929 US6946404B2 (en) | 2002-05-21 | 2003-06-03 | Method for passivating a semiconductor substrate |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1020634A NL1020634C2 (nl) | 2002-05-21 | 2002-05-21 | Werkwijze voor het passiveren van een halfgeleider substraat. |
| NL1020634 | 2002-05-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL1020634C2 true NL1020634C2 (nl) | 2003-11-24 |
Family
ID=29398575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1020634A NL1020634C2 (nl) | 2002-05-21 | 2002-05-21 | Werkwijze voor het passiveren van een halfgeleider substraat. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6946404B2 (enExample) |
| EP (1) | EP1365042A1 (enExample) |
| JP (1) | JP4441607B2 (enExample) |
| KR (1) | KR101056300B1 (enExample) |
| NL (1) | NL1020634C2 (enExample) |
| TW (1) | TWI252523B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7198832B2 (en) | 1999-10-25 | 2007-04-03 | Vitex Systems, Inc. | Method for edge sealing barrier films |
| US6623861B2 (en) | 2001-04-16 | 2003-09-23 | Battelle Memorial Institute | Multilayer plastic substrates |
| US20090191342A1 (en) * | 1999-10-25 | 2009-07-30 | Vitex Systems, Inc. | Method for edge sealing barrier films |
| US20100330748A1 (en) | 1999-10-25 | 2010-12-30 | Xi Chu | Method of encapsulating an environmentally sensitive device |
| US6866901B2 (en) * | 1999-10-25 | 2005-03-15 | Vitex Systems, Inc. | Method for edge sealing barrier films |
| US6413645B1 (en) | 2000-04-20 | 2002-07-02 | Battelle Memorial Institute | Ultrabarrier substrates |
| US20070196682A1 (en) * | 1999-10-25 | 2007-08-23 | Visser Robert J | Three dimensional multilayer barrier and method of making |
| US20090208754A1 (en) * | 2001-09-28 | 2009-08-20 | Vitex Systems, Inc. | Method for edge sealing barrier films |
| US8808457B2 (en) | 2002-04-15 | 2014-08-19 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
| US8900366B2 (en) * | 2002-04-15 | 2014-12-02 | Samsung Display Co., Ltd. | Apparatus for depositing a multilayer coating on discrete sheets |
| NL1020923C2 (nl) * | 2002-06-21 | 2003-12-23 | Otb Group Bv | Werkwijze alsmede inrichting voor het vervaardigen van een katalysator. |
| US7648925B2 (en) * | 2003-04-11 | 2010-01-19 | Vitex Systems, Inc. | Multilayer barrier stacks and methods of making multilayer barrier stacks |
| US7510913B2 (en) * | 2003-04-11 | 2009-03-31 | Vitex Systems, Inc. | Method of making an encapsulated plasma sensitive device |
| NL1025096C2 (nl) * | 2003-12-21 | 2005-06-23 | Otb Group Bv | Werkwijze alsmede inrichting voor het vervaardigen van een functionele laag bestaande uit ten minste twee componenten. |
| NL1029647C2 (nl) * | 2005-07-29 | 2007-01-30 | Otb Group Bv | Werkwijze voor het passiveren van ten minste een deel van een substraatoppervlak. |
| US7767498B2 (en) | 2005-08-25 | 2010-08-03 | Vitex Systems, Inc. | Encapsulated devices and method of making |
| DE102006043943A1 (de) * | 2006-09-14 | 2008-03-27 | Leybold Optics Gmbh | Verfahren zum Aufbringen von Schichten auf Substraten mit gekrümmten Oberflächen |
| USH2207H1 (en) * | 2007-01-05 | 2007-12-04 | Bijker Martin D | Additional post-glass-removal processes for enhanced cell efficiency in the production of solar cells |
| JP5095524B2 (ja) * | 2008-06-26 | 2012-12-12 | 株式会社ユーテック | プラズマcvd装置及び磁気記録媒体の製造方法 |
| US7915154B2 (en) | 2008-09-03 | 2011-03-29 | Piwczyk Bernhard P | Laser diffusion fabrication of solar cells |
| EP2365534A4 (en) * | 2008-12-02 | 2014-04-02 | Mitsubishi Electric Corp | METHOD FOR PRODUCING A SOLAR BATTERY CELL |
| US9184410B2 (en) * | 2008-12-22 | 2015-11-10 | Samsung Display Co., Ltd. | Encapsulated white OLEDs having enhanced optical output |
| US9337446B2 (en) * | 2008-12-22 | 2016-05-10 | Samsung Display Co., Ltd. | Encapsulated RGB OLEDs having enhanced optical output |
| US20100167002A1 (en) * | 2008-12-30 | 2010-07-01 | Vitex Systems, Inc. | Method for encapsulating environmentally sensitive devices |
| DE102009036982A1 (de) | 2009-08-12 | 2011-02-17 | Q-Cells Se | Verfahren und Vorrichtung zur plasmaunterstützten Gasphasenabscheidung für photovoltaisches Element |
| US8590338B2 (en) * | 2009-12-31 | 2013-11-26 | Samsung Mobile Display Co., Ltd. | Evaporator with internal restriction |
| US20120235274A1 (en) * | 2011-03-14 | 2012-09-20 | Doyle Brian S | Semiconductor structure having an integrated double-wall capacitor for embedded dynamic random access memory (edram) and method to form the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4664747A (en) * | 1985-03-28 | 1987-05-12 | Anelva Corporation | Surface processing apparatus utilizing local thermal equilibrium plasma and method of using same |
| EP0887437A2 (en) * | 1997-06-26 | 1998-12-30 | General Electric Company | Protective coating by high rate arc plasma deposition |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4223048A (en) * | 1978-08-07 | 1980-09-16 | Pacific Western Systems | Plasma enhanced chemical vapor processing of semiconductive wafers |
| JPH02250974A (ja) * | 1989-03-23 | 1990-10-08 | Sony Corp | 光反応装置 |
| KR930703707A (ko) * | 1991-01-30 | 1993-11-30 | 죤 죠셉 우르수 | 폴리실리콘 박막 트랜지스터 |
| JPH0555207A (ja) * | 1991-08-29 | 1993-03-05 | Nikko Kyodo Co Ltd | 半導体装置 |
| JP3211302B2 (ja) * | 1991-11-07 | 2001-09-25 | カシオ計算機株式会社 | 窒化シリコン膜 |
| JPH05190575A (ja) * | 1992-01-13 | 1993-07-30 | Murata Mfg Co Ltd | 化合物半導体mesfetにおけるldd構造の形成方法 |
| JPH06204138A (ja) * | 1992-12-28 | 1994-07-22 | Canon Inc | 薄膜形成方法および薄膜形成装置および半導体素子 |
| JPH06216121A (ja) * | 1993-01-14 | 1994-08-05 | Nippondenso Co Ltd | 装置保護膜 |
| JPH08227834A (ja) * | 1995-02-21 | 1996-09-03 | Sony Corp | 半導体ウェーハ及びその製造方法 |
| JP3220645B2 (ja) * | 1996-09-06 | 2001-10-22 | 富士通株式会社 | 半導体装置の製造方法 |
| US6091021A (en) * | 1996-11-01 | 2000-07-18 | Sandia Corporation | Silicon cells made by self-aligned selective-emitter plasma-etchback process |
| US5871591A (en) * | 1996-11-01 | 1999-02-16 | Sandia Corporation | Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process |
| US6213049B1 (en) * | 1997-06-26 | 2001-04-10 | General Electric Company | Nozzle-injector for arc plasma deposition apparatus |
| EP0887737B1 (en) | 1997-06-26 | 2003-01-22 | Hewlett-Packard Company, A Delaware Corporation | Reversible connectors |
| KR100458842B1 (ko) * | 1997-12-01 | 2005-04-06 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 및 제조 방법 |
| TW457555B (en) * | 1998-03-09 | 2001-10-01 | Siemens Ag | Surface passivation using silicon oxynitride |
| DE19812558B4 (de) | 1998-03-21 | 2010-09-23 | Roth & Rau Ag | Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen |
| EP1097473A1 (en) * | 1998-07-10 | 2001-05-09 | Applied Materials, Inc. | Plasma process to deposit silicon nitride with high film quality and low hydrogen content |
| JP2000174019A (ja) * | 1998-12-01 | 2000-06-23 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP4496401B2 (ja) * | 2000-09-14 | 2010-07-07 | 三菱電機株式会社 | プラズマcvd装置および太陽電池の製造方法 |
| JP2002100791A (ja) * | 2000-09-21 | 2002-04-05 | Canon Inc | 太陽電池の製造方法 |
| US6641673B2 (en) * | 2000-12-20 | 2003-11-04 | General Electric Company | Fluid injector for and method of prolonged delivery and distribution of reagents into plasma |
| JP2004047634A (ja) * | 2002-07-10 | 2004-02-12 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
-
2002
- 2002-05-21 NL NL1020634A patent/NL1020634C2/nl not_active IP Right Cessation
-
2003
- 2003-05-21 JP JP2003143908A patent/JP4441607B2/ja not_active Expired - Fee Related
- 2003-05-21 TW TW092113743A patent/TWI252523B/zh not_active IP Right Cessation
- 2003-05-21 KR KR1020030032409A patent/KR101056300B1/ko not_active Expired - Fee Related
- 2003-05-21 EP EP03076530A patent/EP1365042A1/en not_active Withdrawn
- 2003-06-03 US US10/452,929 patent/US6946404B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4664747A (en) * | 1985-03-28 | 1987-05-12 | Anelva Corporation | Surface processing apparatus utilizing local thermal equilibrium plasma and method of using same |
| EP0887437A2 (en) * | 1997-06-26 | 1998-12-30 | General Electric Company | Protective coating by high rate arc plasma deposition |
Non-Patent Citations (1)
| Title |
|---|
| GRAAF DE A ET AL: "AMORPHOUS HYDROGENATED CARBON NITRIDE FILMS DEPOSITED VIA AN EXPANDING THERMAL PLASMA AT HIGH GROWTH RATES", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 333, no. 1/2, 23 November 1998 (1998-11-23), pages 29 - 34, XP000669163, ISSN: 0040-6090 * |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200400552A (en) | 2004-01-01 |
| JP4441607B2 (ja) | 2010-03-31 |
| US20040029334A1 (en) | 2004-02-12 |
| US6946404B2 (en) | 2005-09-20 |
| JP2005005280A (ja) | 2005-01-06 |
| TWI252523B (en) | 2006-04-01 |
| KR20030091733A (ko) | 2003-12-03 |
| KR101056300B1 (ko) | 2011-08-11 |
| EP1365042A1 (en) | 2003-11-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PD2B | A search report has been drawn up | ||
| SD | Assignments of patents |
Owner name: OTB SOLAR B.V. Effective date: 20091022 |
|
| MM | Lapsed because of non-payment of the annual fee |
Effective date: 20180601 |