JP2005005280A5 - - Google Patents

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Publication number
JP2005005280A5
JP2005005280A5 JP2003143908A JP2003143908A JP2005005280A5 JP 2005005280 A5 JP2005005280 A5 JP 2005005280A5 JP 2003143908 A JP2003143908 A JP 2003143908A JP 2003143908 A JP2003143908 A JP 2003143908A JP 2005005280 A5 JP2005005280 A5 JP 2005005280A5
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JP
Japan
Prior art keywords
substrate
layer
sin
time
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003143908A
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English (en)
Japanese (ja)
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JP4441607B2 (ja
JP2005005280A (ja
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Publication date
Priority claimed from NL1020634A external-priority patent/NL1020634C2/nl
Application filed filed Critical
Publication of JP2005005280A publication Critical patent/JP2005005280A/ja
Publication of JP2005005280A5 publication Critical patent/JP2005005280A5/ja
Application granted granted Critical
Publication of JP4441607B2 publication Critical patent/JP4441607B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003143908A 2002-05-21 2003-05-21 半導体基板を不動態化する方法 Expired - Fee Related JP4441607B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL1020634A NL1020634C2 (nl) 2002-05-21 2002-05-21 Werkwijze voor het passiveren van een halfgeleider substraat.

Publications (3)

Publication Number Publication Date
JP2005005280A JP2005005280A (ja) 2005-01-06
JP2005005280A5 true JP2005005280A5 (enExample) 2009-11-19
JP4441607B2 JP4441607B2 (ja) 2010-03-31

Family

ID=29398575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003143908A Expired - Fee Related JP4441607B2 (ja) 2002-05-21 2003-05-21 半導体基板を不動態化する方法

Country Status (6)

Country Link
US (1) US6946404B2 (enExample)
EP (1) EP1365042A1 (enExample)
JP (1) JP4441607B2 (enExample)
KR (1) KR101056300B1 (enExample)
NL (1) NL1020634C2 (enExample)
TW (1) TWI252523B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7198832B2 (en) 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
US6623861B2 (en) 2001-04-16 2003-09-23 Battelle Memorial Institute Multilayer plastic substrates
US20090191342A1 (en) * 1999-10-25 2009-07-30 Vitex Systems, Inc. Method for edge sealing barrier films
US20100330748A1 (en) 1999-10-25 2010-12-30 Xi Chu Method of encapsulating an environmentally sensitive device
US6866901B2 (en) * 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US6413645B1 (en) 2000-04-20 2002-07-02 Battelle Memorial Institute Ultrabarrier substrates
US20070196682A1 (en) * 1999-10-25 2007-08-23 Visser Robert J Three dimensional multilayer barrier and method of making
US20090208754A1 (en) * 2001-09-28 2009-08-20 Vitex Systems, Inc. Method for edge sealing barrier films
US8808457B2 (en) 2002-04-15 2014-08-19 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US8900366B2 (en) * 2002-04-15 2014-12-02 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
NL1020923C2 (nl) * 2002-06-21 2003-12-23 Otb Group Bv Werkwijze alsmede inrichting voor het vervaardigen van een katalysator.
US7648925B2 (en) * 2003-04-11 2010-01-19 Vitex Systems, Inc. Multilayer barrier stacks and methods of making multilayer barrier stacks
US7510913B2 (en) * 2003-04-11 2009-03-31 Vitex Systems, Inc. Method of making an encapsulated plasma sensitive device
NL1025096C2 (nl) * 2003-12-21 2005-06-23 Otb Group Bv Werkwijze alsmede inrichting voor het vervaardigen van een functionele laag bestaande uit ten minste twee componenten.
NL1029647C2 (nl) * 2005-07-29 2007-01-30 Otb Group Bv Werkwijze voor het passiveren van ten minste een deel van een substraatoppervlak.
US7767498B2 (en) 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
DE102006043943A1 (de) * 2006-09-14 2008-03-27 Leybold Optics Gmbh Verfahren zum Aufbringen von Schichten auf Substraten mit gekrümmten Oberflächen
USH2207H1 (en) * 2007-01-05 2007-12-04 Bijker Martin D Additional post-glass-removal processes for enhanced cell efficiency in the production of solar cells
JP5095524B2 (ja) * 2008-06-26 2012-12-12 株式会社ユーテック プラズマｃｖｄ装置及び磁気記録媒体の製造方法
US7915154B2 (en) 2008-09-03 2011-03-29 Piwczyk Bernhard P Laser diffusion fabrication of solar cells
EP2365534A4 (en) * 2008-12-02 2014-04-02 Mitsubishi Electric Corp METHOD FOR PRODUCING A SOLAR BATTERY CELL
US9184410B2 (en) * 2008-12-22 2015-11-10 Samsung Display Co., Ltd. Encapsulated white OLEDs having enhanced optical output
US9337446B2 (en) * 2008-12-22 2016-05-10 Samsung Display Co., Ltd. Encapsulated RGB OLEDs having enhanced optical output
US20100167002A1 (en) * 2008-12-30 2010-07-01 Vitex Systems, Inc. Method for encapsulating environmentally sensitive devices
DE102009036982A1 (de) 2009-08-12 2011-02-17 Q-Cells Se Verfahren und Vorrichtung zur plasmaunterstützten Gasphasenabscheidung für photovoltaisches Element
US8590338B2 (en) * 2009-12-31 2013-11-26 Samsung Mobile Display Co., Ltd. Evaporator with internal restriction
US20120235274A1 (en) * 2011-03-14 2012-09-20 Doyle Brian S Semiconductor structure having an integrated double-wall capacitor for embedded dynamic random access memory (edram) and method to form the same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
JPS61222534A (ja) * 1985-03-28 1986-10-03 Anelva Corp 表面処理方法および装置
JPH02250974A (ja) * 1989-03-23 1990-10-08 Sony Corp 光反応装置
KR930703707A (ko) * 1991-01-30 1993-11-30 죤 죠셉 우르수 폴리실리콘 박막 트랜지스터
JPH0555207A (ja) * 1991-08-29 1993-03-05 Nikko Kyodo Co Ltd 半導体装置
JP3211302B2 (ja) * 1991-11-07 2001-09-25 カシオ計算機株式会社 窒化シリコン膜
JPH05190575A (ja) * 1992-01-13 1993-07-30 Murata Mfg Co Ltd 化合物半導体ｍｅｓｆｅｔにおけるｌｄｄ構造の形成方法
JPH06204138A (ja) * 1992-12-28 1994-07-22 Canon Inc 薄膜形成方法および薄膜形成装置および半導体素子
JPH06216121A (ja) * 1993-01-14 1994-08-05 Nippondenso Co Ltd 装置保護膜
JPH08227834A (ja) * 1995-02-21 1996-09-03 Sony Corp 半導体ウェーハ及びその製造方法
JP3220645B2 (ja) * 1996-09-06 2001-10-22 富士通株式会社 半導体装置の製造方法
US6091021A (en) * 1996-11-01 2000-07-18 Sandia Corporation Silicon cells made by self-aligned selective-emitter plasma-etchback process
US5871591A (en) * 1996-11-01 1999-02-16 Sandia Corporation Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
US6213049B1 (en) * 1997-06-26 2001-04-10 General Electric Company Nozzle-injector for arc plasma deposition apparatus
EP0887737B1 (en) 1997-06-26 2003-01-22 Hewlett-Packard Company, A Delaware Corporation Reversible connectors
US6110544A (en) * 1997-06-26 2000-08-29 General Electric Company Protective coating by high rate arc plasma deposition
KR100458842B1 (ko) * 1997-12-01 2005-04-06 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 및 제조 방법
TW457555B (en) * 1998-03-09 2001-10-01 Siemens Ag Surface passivation using silicon oxynitride
DE19812558B4 (de) 1998-03-21 2010-09-23 Roth & Rau Ag Vorrichtung zur Erzeugung linear ausgedehnter ECR-Plasmen
EP1097473A1 (en) * 1998-07-10 2001-05-09 Applied Materials, Inc. Plasma process to deposit silicon nitride with high film quality and low hydrogen content
JP2000174019A (ja) * 1998-12-01 2000-06-23 Fujitsu Ltd 半導体装置及びその製造方法
JP4496401B2 (ja) * 2000-09-14 2010-07-07 三菱電機株式会社 プラズマｃｖｄ装置および太陽電池の製造方法
JP2002100791A (ja) * 2000-09-21 2002-04-05 Canon Inc 太陽電池の製造方法
US6641673B2 (en) * 2000-12-20 2003-11-04 General Electric Company Fluid injector for and method of prolonged delivery and distribution of reagents into plasma
JP2004047634A (ja) * 2002-07-10 2004-02-12 Tokyo Electron Ltd 成膜方法及び成膜装置

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