CN104862663B - 一种提高硼掺杂纳米金刚石薄膜p型导电性能的方法 - Google Patents
一种提高硼掺杂纳米金刚石薄膜p型导电性能的方法 Download PDFInfo
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- CN104862663B CN104862663B CN201510248811.8A CN201510248811A CN104862663B CN 104862663 B CN104862663 B CN 104862663B CN 201510248811 A CN201510248811 A CN 201510248811A CN 104862663 B CN104862663 B CN 104862663B
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 85
- 239000002113 nanodiamond Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 22
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 32
- 239000010432 diamond Substances 0.000 claims abstract description 32
- 239000000126 substance Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 238000005498 polishing Methods 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000005587 bubbling Effects 0.000 claims description 5
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims description 2
- 230000037230 mobility Effects 0.000 abstract description 26
- 239000010409 thin film Substances 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 abstract description 3
- 238000010348 incorporation Methods 0.000 abstract description 3
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- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 59
- 230000003647 oxidation Effects 0.000 description 16
- 238000007254 oxidation reaction Methods 0.000 description 16
- 239000013078 crystal Substances 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 238000001237 Raman spectrum Methods 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
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- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- OJURWUUOVGOHJZ-UHFFFAOYSA-N methyl 2-[(2-acetyloxyphenyl)methyl-[2-[(2-acetyloxyphenyl)methyl-(2-methoxy-2-oxoethyl)amino]ethyl]amino]acetate Chemical compound C=1C=CC=C(OC(C)=O)C=1CN(CC(=O)OC)CCN(CC(=O)OC)CC1=CC=CC=C1OC(C)=O OJURWUUOVGOHJZ-UHFFFAOYSA-N 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 238000003795 desorption Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000001424 field-emission electron microscopy Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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CN106435518B (zh) * | 2016-10-21 | 2018-07-17 | 中南大学 | 一种高比表面积硼掺杂金刚石电极及其制备方法和应用 |
US20200357578A1 (en) * | 2017-11-16 | 2020-11-12 | Daicel Corporation | Electrode material for capacitor |
CN111304690B (zh) * | 2018-12-11 | 2022-04-12 | 深圳先进技术研究院 | 一种硼硅共掺杂金刚石电极及其制备方法与应用 |
AT525593A1 (de) | 2021-10-22 | 2023-05-15 | Carboncompetence Gmbh | Vorrichtung und Verfahren zur Herstellung dotierter Diamantschichten |
CN114959632A (zh) * | 2022-05-13 | 2022-08-30 | 中国科学院金属研究所 | 一种二维金刚石纳米片材料的制备方法 |
CN115376631B (zh) * | 2022-08-16 | 2023-06-23 | 江苏科技大学 | 一种p型透明导电薄膜介电函数和电子关联度的获取方法 |
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CN101235485A (zh) * | 2008-02-29 | 2008-08-06 | 上海大学 | 纳米金刚石薄膜窗口的制备方法 |
CN101956178A (zh) * | 2010-09-28 | 2011-01-26 | 浙江工业大学 | 一种硼掺杂纳米金刚石薄膜及制备方法 |
CN102251231A (zh) * | 2011-07-29 | 2011-11-23 | 广州市德百顺电气科技有限公司 | 一种纳米金刚石薄膜的制备方法 |
CN104060237B (zh) * | 2014-06-10 | 2016-09-21 | 浙江工业大学 | 一种具有Si-V发光的纳米金刚石薄膜及制备方法 |
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Effective date of registration: 20240524 Address after: Room 4-1/5-1, Building 16, Wanyang (Zhouxiang) Zhongchuang City, Zhouxiang Town, Cixi City, Ningbo City, Zhejiang Province, 315300 Patentee after: Zhejiang Lanti Semiconductor Technology Co.,Ltd. Country or region after: China Address before: The city Zhaohui six districts Chao Wang Road Hangzhou City, Zhejiang province 310014 18 Patentee before: JIANG University OF TECHNOLOGY Country or region before: China |