CN107946180A - 一种在碳化硅基片上快速生长氧化层的方法 - Google Patents
一种在碳化硅基片上快速生长氧化层的方法 Download PDFInfo
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- CN107946180A CN107946180A CN201711203679.4A CN201711203679A CN107946180A CN 107946180 A CN107946180 A CN 107946180A CN 201711203679 A CN201711203679 A CN 201711203679A CN 107946180 A CN107946180 A CN 107946180A
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- oxide layer
- ion
- silicon carbide
- piece fast
- injection
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 70
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 49
- -1 oxonium ion Chemical class 0.000 claims abstract description 54
- 230000003647 oxidation Effects 0.000 claims abstract description 38
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 38
- 150000002500 ions Chemical class 0.000 claims abstract description 33
- 238000002347 injection Methods 0.000 claims abstract description 26
- 239000007924 injection Substances 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 6
- 239000007943 implant Substances 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 11
- 239000000463 material Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 230000001590 oxidative effect Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910018540 Si C Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711203679.4A CN107946180B (zh) | 2017-11-27 | 2017-11-27 | 一种在碳化硅基片上快速生长氧化层的方法 |
PCT/CN2018/115868 WO2019101008A1 (zh) | 2017-11-27 | 2018-11-16 | 一种在碳化硅基片上快速生长氧化层的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711203679.4A CN107946180B (zh) | 2017-11-27 | 2017-11-27 | 一种在碳化硅基片上快速生长氧化层的方法 |
Publications (2)
Publication Number | Publication Date |
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CN107946180A true CN107946180A (zh) | 2018-04-20 |
CN107946180B CN107946180B (zh) | 2020-05-29 |
Family
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CN201711203679.4A Active CN107946180B (zh) | 2017-11-27 | 2017-11-27 | 一种在碳化硅基片上快速生长氧化层的方法 |
Country Status (2)
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CN (1) | CN107946180B (zh) |
WO (1) | WO2019101008A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108847384A (zh) * | 2018-06-11 | 2018-11-20 | 重庆伟特森电子科技有限公司 | 一种在碳化硅基片上生长氧化层的方法 |
WO2019101008A1 (zh) * | 2017-11-27 | 2019-05-31 | 重庆伟特森电子科技有限公司 | 一种在碳化硅基片上快速生长氧化层的方法 |
CN111129155A (zh) * | 2019-12-25 | 2020-05-08 | 重庆伟特森电子科技有限公司 | 一种低栅漏电容碳化硅di-mosfet制备方法 |
CN113130298A (zh) * | 2021-04-12 | 2021-07-16 | 中国科学院微电子研究所 | 一种半导体器件的制造方法 |
CN113497140A (zh) * | 2020-03-20 | 2021-10-12 | 江苏中科汉韵半导体有限公司 | 碳化硅场效应晶体管及其制备方法、碳化硅功率器件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003133304A (ja) * | 2002-08-26 | 2003-05-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2003282845A (ja) * | 2002-03-20 | 2003-10-03 | Mitsubishi Electric Corp | 炭化ケイ素基板の製造方法およびその製造方法により製造された炭化ケイ素基板、ならびに、ショットキーバリアダイオードおよび炭化ケイ素薄膜の製造方法 |
CN102347265A (zh) * | 2010-07-28 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | 防止存储器穿通电压降低的方法及存储器 |
CN102420130A (zh) * | 2011-07-01 | 2012-04-18 | 上海华力微电子有限公司 | 通过离子注入工艺来控制氧化膜厚度的方法 |
CN103472533A (zh) * | 2013-09-26 | 2013-12-25 | 山东建筑大学 | 一种离子注入制备掺铒碳化硅光波导的方法 |
CN105810722A (zh) * | 2016-03-16 | 2016-07-27 | 中国科学院半导体研究所 | 一种碳化硅mosfet器件及其制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2989051B2 (ja) * | 1991-09-24 | 1999-12-13 | ローム株式会社 | 炭化シリコンバイポーラ半導体装置およびその製造方法 |
CN107946180B (zh) * | 2017-11-27 | 2020-05-29 | 北京品捷电子科技有限公司 | 一种在碳化硅基片上快速生长氧化层的方法 |
-
2017
- 2017-11-27 CN CN201711203679.4A patent/CN107946180B/zh active Active
-
2018
- 2018-11-16 WO PCT/CN2018/115868 patent/WO2019101008A1/zh active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003282845A (ja) * | 2002-03-20 | 2003-10-03 | Mitsubishi Electric Corp | 炭化ケイ素基板の製造方法およびその製造方法により製造された炭化ケイ素基板、ならびに、ショットキーバリアダイオードおよび炭化ケイ素薄膜の製造方法 |
JP2003133304A (ja) * | 2002-08-26 | 2003-05-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
CN102347265A (zh) * | 2010-07-28 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | 防止存储器穿通电压降低的方法及存储器 |
CN102420130A (zh) * | 2011-07-01 | 2012-04-18 | 上海华力微电子有限公司 | 通过离子注入工艺来控制氧化膜厚度的方法 |
CN103472533A (zh) * | 2013-09-26 | 2013-12-25 | 山东建筑大学 | 一种离子注入制备掺铒碳化硅光波导的方法 |
CN105810722A (zh) * | 2016-03-16 | 2016-07-27 | 中国科学院半导体研究所 | 一种碳化硅mosfet器件及其制备方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019101008A1 (zh) * | 2017-11-27 | 2019-05-31 | 重庆伟特森电子科技有限公司 | 一种在碳化硅基片上快速生长氧化层的方法 |
CN108847384A (zh) * | 2018-06-11 | 2018-11-20 | 重庆伟特森电子科技有限公司 | 一种在碳化硅基片上生长氧化层的方法 |
CN111129155A (zh) * | 2019-12-25 | 2020-05-08 | 重庆伟特森电子科技有限公司 | 一种低栅漏电容碳化硅di-mosfet制备方法 |
CN113497140A (zh) * | 2020-03-20 | 2021-10-12 | 江苏中科汉韵半导体有限公司 | 碳化硅场效应晶体管及其制备方法、碳化硅功率器件 |
CN113130298A (zh) * | 2021-04-12 | 2021-07-16 | 中国科学院微电子研究所 | 一种半导体器件的制造方法 |
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Publication number | Publication date |
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WO2019101008A1 (zh) | 2019-05-31 |
CN107946180B (zh) | 2020-05-29 |
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