JP2015103631A - 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置および炭化珪素半導体装置の製造方法 Download PDFInfo
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Abstract
Description
実施の形態にかかる炭化珪素半導体装置の製造方法によって作製(製造)される炭化珪素半導体装置の構造について、ショットバリアダイオード(以下、SiC−SBD)を例に説明する。図1は、実施の形態にかかる炭化珪素半導体装置の製造方法により製造される炭化珪素半導体装置の一例を示す断面図である。図1に示すように、実施の形態にかかる炭化珪素半導体装置において、炭化珪素(SiC)からなるn型半導体基板(以下、n型SiC基板とする)1のおもて面上には、n-型ドリフト領域となるn-型SiCエピタキシャル層2が設けられている。以下、n型SiC基板1およびn-型SiCエピタキシャル層2からなるn型SiCエピタキシャル基板の、n-型SiCエピタキシャル層2側の面をおもて面とし、n型SiC基板1側の面を裏面とする。
次に、n+型半導体領域7の不純物濃度および厚さと裏面電極(オーミック電極8および外部接続用電極層9)の剥離の有無との関係について説明する。図9は、実施例1にかかる炭化珪素半導体装置の裏面電極に対する剥離試験の結果を示す説明図である。まず、上述した実施の形態にかかる炭化珪素半導体装置の製造方法にしたがい、上記諸条件で図1に示すSiC−SBDを作製した(以下、実施例1−1,1−2とする)。具体的には、実施例1−1においては、製品完成後のn+型半導体領域7のボックスプロファイルの不純物濃度および厚さ(以降、単にn+型半導体領域7の不純物濃度および厚さとする)がそれぞれ8×1020/cm3および200nmとなるように、上記加速エネルギーで第2イオン注入を行った。
次に、n+型半導体領域7の厚さと裏面電極の剥離の有無との関係について説明する。図10は、実施例2にかかる炭化珪素半導体装置の裏面電極に対する剥離試験の結果を示す説明図である。実施例2としてn+型半導体領域7(図10においては高濃度不純物層と記載)の厚さの異なる第1〜5試料を作製した。第1〜5試料において、n+型半導体領域7の厚さは、それぞれ500nm、400nm、300nm、200nmおよび150nmとした。実施例2の、n+型半導体領域7の厚さ以外の条件は実施例1−1と同様である。実施例2において、第2イオン注入の加速エネルギーは実施例1−1と同様であり、第2イオン注入の多段注入数を増減させてn+型半導体領域7の厚さを変えている。すなわち、第2イオン注入の多段注入数を増やすことでn+型半導体領域7の厚さを厚くしており、第2イオン注入の多段注入数は、n+型半導体領域7の厚さの厚さが最も厚い第1試料が最も多く、n+型半導体領域7の厚さが最も薄い第5試料が最も少ない。第4試料は、実施例1−1に相当する。
2 n-型SiCエピタキシャル層
3 p+型半導体領域
4 層間絶縁膜
4a コンタクトホール
5 ショットキー電極
6 電極パッド
7 n+型半導体領域
8 オーミック電極
9 外部接続用電極層
11 カーボン保護膜
Claims (10)
- 炭化珪素からなる半導体基板の裏面に不純物を注入し、前記半導体基板の裏面の表面層に、前記半導体基板よりも不純物濃度が高い高濃度半導体領域を形成する第1工程と、
前記高濃度半導体領域の表面に金属電極を形成する第2工程と、
熱処理により、前記高濃度半導体領域と前記金属電極とのオーミックコンタクトを形成する第3工程と、
を含み、
前記高濃度半導体領域の不純物濃度を1×1019/cm3以上8×1020/cm3以下とし、
前記高濃度半導体領域の厚さを200nm以下とすることを特徴とする炭化珪素半導体装置の製造方法。 - 前記高濃度半導体領域の不純物濃度を4×1020/cm3以下とすることを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記第1工程では、前記不純物として、アルミニウム、リン、砒素、窒素、ボロン、マグネシウムまたはガリウムを注入することを特徴とする請求項1または2に記載の炭化珪素半導体装置の製造方法。
- 前記第1工程では、150keV以下の加速エネルギーで前記不純物を注入することを特徴とする請求項1〜3のいずれか一つに記載の炭化珪素半導体装置の製造方法。
- 前記第2工程では、前記高濃度半導体領域の表面にニッケル層およびチタン層を順に形成し、
前記第3工程では、熱処理により前記ニッケル層と前記高濃度半導体領域とを反応させて、前記金属電極としてニッケルシリサイド層を形成することを特徴とする請求項1〜4のいずれか一つに記載の炭化珪素半導体装置の製造方法。 - 前記第2工程前に、前記半導体基板のおもて面側に、おもて面素子構造を形成する工程をさらに含むことを特徴とする請求項1〜4のいずれか一つに記載の炭化珪素半導体装置の製造方法。
- 炭化珪素からなる半導体基板の裏面の表面層に設けられた、前記半導体基板よりも不純物濃度が高い高濃度半導体領域と、
前記高濃度半導体領域の表面に設けられ、前記高濃度半導体領域とのオーミックコンタクトを形成する金属電極と、
を備え、
前記高濃度半導体領域の不純物濃度は、1×1019/cm3以上8×1020/cm3以下であり、
前記高濃度半導体領域の厚さは、200nm以下であることを特徴とする炭化珪素半導体装置。 - 前記高濃度半導体領域の不純物濃度は、4×1020/cm3以下であることを特徴とする請求項7に記載の炭化珪素半導体装置。
- 前記金属電極は、ニッケルシリサイド層であることを特徴とする請求項7または8に記載の炭化珪素半導体装置。
- 前記半導体基板のおもて面側に設けられたおもて面素子構造をさらに備えることを特徴とする請求項7〜9のいずれか一つに記載の炭化珪素半導体装置。
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