JP5966556B2 - 半導体デバイスの製造方法 - Google Patents
半導体デバイスの製造方法 Download PDFInfo
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- JP5966556B2 JP5966556B2 JP2012095159A JP2012095159A JP5966556B2 JP 5966556 B2 JP5966556 B2 JP 5966556B2 JP 2012095159 A JP2012095159 A JP 2012095159A JP 2012095159 A JP2012095159 A JP 2012095159A JP 5966556 B2 JP5966556 B2 JP 5966556B2
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- 239000004065 semiconductor Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 67
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 53
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 26
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 26
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 24
- 229910052719 titanium Inorganic materials 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 34
- 230000004888 barrier function Effects 0.000 description 28
- 229910052759 nickel Inorganic materials 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
Description
つぎに、図1〜9に示した製造工程により製造したショットキーバリアダイオードの実施例について説明する。図10は、本発明の実施例によるフィールドリミッティングリング(FLR)構造を持つショットキーバリアダイオード(SBD)を示す断面図である。このFLR−SBD20の製造工程について説明する。
上記の実施例と対比するための比較対象として、上記製造工程の手順と同様に、SiC半導体デバイスを製造した。製造工程のうち、表面電極の形成については、アルミニウムを室温で形成して異ならせた。得られた比較対象のSiC半導体デバイスについて、表面電極17断面をTEM観察したところ、この表面電極17の内部に鬆(ボイド)が認められた。すなわち、ショットキー電極16のパターン凹凸に対して、表面電極17が密に被覆していない箇所が生じ、ショットキー電極16と表面電極17からなる表面電極構造が良質ではないSiC半導体デバイスが製造された。また、表面電極17の反射率は82%となり、自動ワイヤボンディング装置により表面電極17を認識することができなかった。
11 SiC基板
12 ガードリング
13 絶縁層
14 チタンカーバイドを包含したニッケルシリサイド層
15 炭素層
16 ショットキー電極
17 表面電極
18 裏面電極
21 オーミック電極
22 高濃度n型基板
23 低濃度n型ドリフト層
24 p型不純物イオン注入領域
25 ショットキー電極
26 FLR構造
27 JBS構造
Claims (1)
- 炭化珪素半導体基板に電極構造を形成する半導体デバイスの製造方法であって、
前記炭化珪素半導体基板の裏面側に、チタンカーバイドを含むニッケルシリサイド層のオーミック電極と、金属層の裏面電極とからなる裏面電極構造を形成し、
前記炭化珪素半導体基板のおもて面に、チタン、タングステン、モリブデン、クロムのいずれか一つの金属を含むショットキー層を形成し、
前記ショットキー層を加熱することにより、前記炭化珪素半導体基板とのショットキーコンタクトを有するショットキー電極を形成し、
アルミニウムまたは珪素を含むアルミニウムにより、前記ショットキー電極の表面に表面電極を形成するものであり、
前記表面電極の形成時には、当該表面電極が前記ショットキー電極の凹凸を被覆し且つ前記表面電極が認識装置で認識可能な所定の反射率以下となる条件に適合した温度範囲(スパッタ法による圧力が0.1Pa以上1Pa以下であり、前記炭化珪素半導体基板の温度が100℃以上500℃以下)を有して加熱し、
前記加熱により前記炭化珪素半導体基板の裏面に析出した炭素層を除去する、
工程を含むことを特徴とする半導体デバイスの製造方法。
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JP2012095159A JP5966556B2 (ja) | 2012-04-18 | 2012-04-18 | 半導体デバイスの製造方法 |
DE112013002109.9T DE112013002109T5 (de) | 2012-04-18 | 2013-03-14 | Verfahren zum Herstellen einer Halbleitervorrichtung |
KR1020147028270A KR20140145588A (ko) | 2012-04-18 | 2013-03-14 | 반도체 디바이스의 제조 방법 |
CN201380018966.1A CN104272442B (zh) | 2012-04-18 | 2013-03-14 | 半导体器件的制造方法 |
PCT/JP2013/057312 WO2013157335A1 (ja) | 2012-04-18 | 2013-03-14 | 半導体デバイスの製造方法 |
US14/511,151 US9263543B2 (en) | 2012-04-18 | 2014-10-09 | Method for manufacturing a semiconductor device |
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JP6112699B2 (ja) * | 2012-03-30 | 2017-04-12 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法及び該方法により製造された炭化珪素半導体装置 |
JP6164062B2 (ja) * | 2013-11-22 | 2017-07-19 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
JP6222771B2 (ja) * | 2013-11-22 | 2017-11-01 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体装置の製造方法 |
US9552993B2 (en) * | 2014-02-27 | 2017-01-24 | Semiconductor Components Industries, Llc | Semiconductor device and manufacturing method thereof |
CN106256024B (zh) * | 2014-04-30 | 2019-11-26 | 三菱电机株式会社 | 碳化硅半导体装置 |
DE102015102055A1 (de) * | 2015-01-16 | 2016-07-21 | Infineon Technologies Ag | Verfahren zum Bearbeiten einer Halbleiteroberfläche |
CN107785250B (zh) * | 2016-08-31 | 2020-12-11 | 株洲中车时代半导体有限公司 | 碳化硅基肖特基接触制作方法及肖特基二极管制造方法 |
JP6724685B2 (ja) * | 2016-09-23 | 2020-07-15 | 住友電気工業株式会社 | 半導体装置 |
WO2018092129A1 (en) | 2016-11-15 | 2018-05-24 | The Medical Research,Infrastructure, And Health Services Fund Of The Tel-Aviv Medical Center | Tissue repair device and method |
JP6922202B2 (ja) * | 2016-12-07 | 2021-08-18 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN108321213A (zh) * | 2017-12-21 | 2018-07-24 | 秦皇岛京河科学技术研究院有限公司 | SiC功率二极管器件的制备方法及其结构 |
JP7135443B2 (ja) * | 2018-05-29 | 2022-09-13 | 富士電機株式会社 | 炭化ケイ素半導体装置及びその製造方法 |
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