WO2019101008A1 - 一种在碳化硅基片上快速生长氧化层的方法 - Google Patents

一种在碳化硅基片上快速生长氧化层的方法 Download PDF

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WO2019101008A1
WO2019101008A1 PCT/CN2018/115868 CN2018115868W WO2019101008A1 WO 2019101008 A1 WO2019101008 A1 WO 2019101008A1 CN 2018115868 W CN2018115868 W CN 2018115868W WO 2019101008 A1 WO2019101008 A1 WO 2019101008A1
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oxide layer
oxygen
ions
silicon carbide
carbide substrate
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French (fr)
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何志
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重庆伟特森电子科技有限公司
北京品捷电子科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide

Definitions

  • the invention relates to the field of semiconductor technology. More specifically, it relates to a method of rapidly growing an oxide layer on a silicon carbide substrate.
  • SiC Silicon carbide
  • SiC is a wide-bandgap semiconductor material with high critical breakdown electric field strength, high saturation electron mobility, high thermal conductivity, etc. It is especially suitable for high-power power transmission and transduction technology. Power electronic devices fabricated from SiC materials can carry high voltages, large currents, and can work stably in demanding applications such as high radiation and high temperatures. SiC materials can be used to prepare rectifier devices such as Schottky diodes and PIN tubes, and can also be used to fabricate switching devices such as MOSFETs, JFETs, and IGBTs. SiC materials are also widely used in MEMS devices.
  • the oxidation process is a commonly used preparation process in the fabrication of semiconductor devices.
  • the oxidation process can be used to grow a gate oxide layer, an isolation layer between the sacrificial oxide layer electrodes, and a masking layer for implantation or etching.
  • SiC material is another semiconductor material that can directly grow SiO 2 by thermal oxidation after Si material. This property of SiC material brings unique advantages to the preparation of SiC device.
  • the chemical properties of the SiC material itself are very stable, the oxidation rate of SiC is very slow, and a high oxidation temperature is required, which results in the growth of the oxide layer of several tens of nanometers in thickness, which takes a long time and temperature.
  • a high oxidation temperature is required, which results in the growth of the oxide layer of several tens of nanometers in thickness, which takes a long time and temperature.
  • the quality and interfacial state of the resulting silicon oxide are problematic, and the growth of thicker oxide layers for isolation or shielding purposes is very difficult.
  • 4H-SiC is an anisotropic material, and the oxidation rate of different crystal faces is different.
  • the oxidation rate of Si crystal faces is the slowest, and the C crystal faces are the slowest.
  • the oxidation rate is the fastest, and the oxidation rate of the a crystal plane and the m crystal plane is slightly lower than that of the C crystal plane.
  • the epitaxial wafer of the prior art is mainly based on the epitaxial wafer of the Si crystal plane, which results in a long time for the growth of the oxide layer when preparing the high voltage device, and the oxidation rate of different parts of the device will be different. It can have additional adverse effects on device functionality, presenting new challenges to device structure and process design.
  • the only method of the prior art is to increase the oxidation temperature of SiC.
  • the increased oxidation temperature of SiC requires expensive instruments for SiC device fabrication, extremely low throughput, and the resulting oxide layer and the interface between the oxide layer and the silicon carbide substrate have functional problems.
  • How to increase the oxidation rate of the growth oxide layer on the silicon carbide substrate has become a technical problem to be solved by those skilled in the art.
  • the technical problem to be solved by the present invention is to provide a method for rapidly growing an oxide layer on a silicon carbide substrate to increase the oxidation rate of SiC.
  • a method for rapidly growing an oxide layer on a silicon carbide substrate comprising the steps of:
  • SiC substrate after the formation of the oxygen ion implantation layer is subjected to high temperature oxidation treatment to form an oxide layer, and the oxidation layer has an oxidation depth greater than or equal to an oxygen ion implantation depth of the oxygen ion implantation layer.
  • the energy of the oxygen ions injected is 10 keV to 1000 keV.
  • the dose of the oxygen ions injected is 1 ⁇ 10 14 cm -2 to 1 ⁇ 10 18 cm -2 .
  • the temperature of the injected oxygen ions is 0-500 °C.
  • the oxygen ion implantation angle is 0-45°.
  • the temperature of the high temperature oxidation treatment is 800-2000 °C.
  • the implanted oxygen ions are oxygen ions formed by stripping electrons from oxygen atoms, or oxygen ion clusters formed by stripping electrons from oxygen molecules.
  • the accompanying ions are implanted into the region of the oxide layer to be grown simultaneously with or before the oxygen ions are implanted, and the accompanying ions It is a nitrogen ion, a silicon ion, an aluminum ion, a boron ion, and/or a phosphorus ion.
  • the atmosphere of the high temperature oxidation treatment is a dry oxygen atmosphere or a wet oxygen atmosphere.
  • the dry oxygen atmosphere is a dry oxygen atmosphere carrying H, NO, N 2 O, NO 2 , or POCL 3 gas;
  • the wet oxygen atmosphere is carrying H, NO, N 2 O, NO 2 , or a wet oxygen atmosphere of POCL 3 gas.
  • Any range recited in the present invention includes any value between the end value and the end value, and any subrange of any value between the end value or the end value.
  • each of the raw materials in the present invention can be obtained by commercially available purchase, and the apparatus used in the present invention can be carried out by using conventional equipment in the art or by referring to the prior art in the related art.
  • the present invention has the following beneficial effects:
  • the method for rapidly growing an oxide layer on a silicon carbide substrate of the present invention can effectively increase the oxidation rate of SiC by more than one order of magnitude, and can artificially control the oxidation rate of SiC by changing oxygen ion implantation conditions, thereby getting rid of SiC.
  • Different oxidation planes have different oxidation rates.
  • the SiC lattice is effectively disrupted by oxygen ion implantation, and becomes amorphous, and the bond energy of the Si-C bond is lowered, thereby effectively increasing The reaction rate of Si with oxygen.
  • the injected oxygen ions can supplement the oxygen demand in the oxidation process of SiC, increase the growth rate of the oxide layer, and avoid introducing unintentionally doped impurities in the oxidation process.
  • FIG. 1 is a flow chart of a method for rapidly growing an oxide layer on a silicon carbide substrate according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of injection of oxygen ions in a method for rapidly growing an oxide layer on a silicon carbide substrate according to an embodiment of the present invention
  • FIG. 3 is a second schematic view of implanting oxygen ions in a method for rapidly growing an oxide layer on a silicon carbide substrate according to an embodiment of the present invention
  • FIG. 4 is a schematic diagram of forming an oxide layer in a method of rapidly growing an oxide layer on a silicon carbide substrate according to an embodiment of the present invention.
  • the method for rapidly growing an oxide layer on a silicon carbide substrate includes the following steps:
  • the SiC substrate 1 after the formation of the oxygen ion implantation layer 3 is subjected to high temperature oxidation treatment to form an oxide layer 4, and the oxidation layer 4 has an oxidation depth greater than or equal to that of the oxygen ion implantation layer 3. Injection depth.
  • the energy of the injected oxygen ions 2 is from 10 keV to 1000 keV.
  • the dose of the oxygen ions 2 to be implanted is 1 ⁇ 10 14 cm -2 to 1 ⁇ 10 18 cm -2 .
  • the temperature of the injected oxygen ions 2 is 0 to 500 °C.
  • the implantation angle of the oxygen ions 2 is 0-45° to achieve different oxygen ion implantation depths and different bombardment effects on the SiC lattice.
  • the injection angle here refers to the angle between the injection direction of the oxygen ions 2 and the surface normal of the SiC substrate 1. For example, the injection angle shown in Fig. 2 is 0; the injection angle shown in Fig. 2 is 30°.
  • the implanted oxygen ions 2 are oxygen ions formed by stripping electrons from oxygen atoms, or oxygen ion clusters formed by stripping electrons from oxygen molecules.
  • the accompanying ions are implanted into the region of the oxide layer to be grown simultaneously or after the oxygen ions 2 are implanted, or before the oxygen ions 2 are implanted, to obtain a plurality of implants.
  • the accompanying ions are nitrogen ions, silicon ions, aluminum ions, boron ions, and/or phosphorus ions.
  • the temperature of the high temperature oxidation treatment is 800 to 2000 °C.
  • the atmosphere of the high temperature oxidation treatment is a dry oxygen atmosphere or a wet oxygen atmosphere.
  • the dry oxygen atmosphere is a dry oxygen atmosphere carrying H, NO, N 2 O, NO 2 , or POCL 3 gas
  • the wet oxygen atmosphere is carrying H, NO, and N 2 .
  • the SiC lattice is effectively disturbed by oxygen ion implantation, and becomes amorphous, and the bond energy of the Si-C bond is lowered, thereby effectively increasing Si.
  • the rate of reaction with oxygen can supplement the oxygen demand in the oxidation process of SiC, increase the growth rate of the oxide layer, and avoid introducing unintentionally doped impurities during the oxidation process.
  • the oxidation rate of SiC can be effectively increased by more than one order of magnitude, and the artificial oxidation of the SiC oxidation rate can be realized by changing the oxygen ion implantation condition, thereby getting rid of SiC.
  • Different oxidation planes have different oxidation rates.
  • the method of rapidly growing an oxide layer on a silicon carbide substrate of the present embodiment can be applied to all semiconductor device fabrication processes for changing an oxidation site, an oxidation mechanism, an oxidation rate, an oxide film, and an interface property by oxygen ion implantation.

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  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

本发明公开一种在碳化硅基片上快速生长氧化层的方法，该方法包括如下步骤：S1：在SiC基片(1)上选取待生长氧化层的区域；S2：通过离子注入的方式对所述待生长氧化层的区域注入氧离子(2)，形成氧离子注入层(3)；S3：将形成所述氧离子注入层(3)后的SiC基片(1)进行高温氧化处理，形成氧化层(4)，且所述氧化层(4)的氧化深度大于或等于所述氧离子注入层(3)的氧离子注入深度。本发明的方法可以将SiC的氧化速度有效提高一个数量级以上，并且可以通过改变氧离子注入条件实现对SiC氧化速度的人为调控，由此摆脱SiC不同晶面的氧化速度不同的制约，并改变和控制形成的氧化膜的性质。

Description

一种在碳化硅基片上快速生长氧化层的方法 技术领域
本发明涉及半导体技术领域。更具体地，涉及一种在碳化硅基片上快速生长氧化层的方法。
背景技术
碳化硅(SiC)是一种宽禁带半导体材料，具有高临界击穿电场强度、高饱和电子迁移率、高热导率等优点，特别适合应用于大功率电力传输和换能技术领域。用SiC材料制备的电力电子器件可以承载高电压、大电流，并且可以在高辐射、高温等苛刻应用环境下稳定工作。SiC材料可以用于制备肖特基二极管、PIN管等整流器件，亦可以用于制备MOSFET、JFET、IGBT等开关器件。SiC材料在MEMS器件中也有广泛应用。
在半导体器件制备过程中，氧化工艺是一种常用的制备工艺。氧化工艺可以用来生长栅极氧化层、牺牲氧化层电极之间的隔离层、以及用于注入或刻蚀等用途的掩蔽层。SiC材料是继Si材料后另一种可以直接通过热氧化生长SiO 2的半导体材料，SiC材料的这一特性给SiC器件的制备带来了得天独厚的优势。
但是，SiC材料本身的化学性质非常稳定，SiC的氧化速度非常缓慢，并且需要很高的氧化温度，这导致几十纳米厚度的氧化层的生长都很缓慢，需要的时间和温度都要远远高于常见的Si的氧化，生成的氧化硅的质量和界面状态都有问题，而用于隔离或屏蔽用途的更厚的氧化层的生长则非常困难。同时，作为SiC材料中最常用的一种异型体，4H-SiC是一种各向异性材料，其不同晶面的氧化速度差异较大，其中Si晶面的氧化速度最慢，C晶面的氧化速度最快，a晶面和m晶面的氧化速度略低于C晶面。鉴于Si晶面的外延技术较为成熟，现有技术的外延片主要是基于Si晶面的外延片，这导致制备高压器件时氧化层的生长需要很长时间，并且器件不同部位的氧化速率不同将会对器件功能产生额外的不利影响，给器件结构以及工艺设计带来新的挑战。
为解决上述问题，现有技术的唯一方法是提高SiC的氧化温度。SiC的氧化温度提高使得SiC器件制备需要昂贵的仪器，产能极低，并且制备得到的氧化层、以及氧化层与碳化硅基片的界面在功能上也有诸多问题。如何提高在碳化硅基片上生 长氧化层的氧化速度已经成为本领域技术人员亟待解决的技术难题。
因此，需要提供一种在碳化硅基片上快速生长氧化层的方法，以提高SiC的氧化速度。
发明内容
本发明要解决的技术问题是提供一种在碳化硅基片上快速生长氧化层的方法，以提高SiC的氧化速度。
为解决上述技术问题，发明采用如下的技术方案：
本发明。一种在碳化硅基片上快速生长氧化层的方法，该方法包括如下步骤：
S1：在SiC基片上选取待生长氧化层的区域；
S2：通过离子注入的方式对所述待生长氧化层的区域注入氧离子，形成氧离子注入层；
S3：将形成所述氧离子注入层后的SiC基片进行高温氧化处理，形成氧化层，且所述氧化层的氧化深度大于或等于所述氧离子注入层的氧离子注入深度。
作为技术方案的进一步改进，所述步骤S2中，注入的所述氧离子的能量为10keV至1000keV。
作为技术方案的进一步改进，所述步骤S2中，注入的所述氧离子的剂量为1×10 14cm -2至1×10 18cm -2。
作为技术方案的进一步改进，所述步骤S2中，注入的所述氧离子的温度为0-500℃。
作为技术方案的进一步改进，所述步骤S2中，所述氧离子的注入角度为0-45°。
作为技术方案的进一步改进，所述步骤S3中，所述高温氧化处理的温度为800-2000℃。
作为技术方案的进一步改进，所述步骤S2中，注入的所述氧离子为由氧原子剥离电子后形成的氧离子，或者为由氧分子剥离电子后形成的氧离子团。
作为技术方案的进一步改进，所述步骤S2中，在所述注入氧离子的同时、或者在所述注入氧离子之前或之后对所述待生长氧化层的区域注入伴随离子，且所述伴随离子为氮离子、硅离子、铝离子、硼离子和/或磷离子。
作为技术方案的进一步改进，所述步骤S3中，所述高温氧化处理的气氛为干氧气氛或湿氧气氛。
作为技术方案的进一步改进，所述干氧气氛为携带H、NO、N 2O、NO 2、或POCL 3气体的干氧气氛；所述湿氧气氛为携带H、NO、N 2O、NO 2、或POCL 3气体的湿氧气氛。
本发明所记载的任何范围包括端值以及端值之间的任何数值以及端值或者端值之间的任意数值所构成的任意子范围。
如无特殊说明，本发明中的各原料均可通过市售购买获得，本发明中所用的设备可采用所属领域中的常规设备或参照所属领域的现有技术进行。
与现有技术相比较，本发明具有如下有益效果：
1)本发明的在碳化硅基片上快速生长氧化层的方法，可以将SiC的氧化速度有效提高一个数量级以上，并且可以通过改变氧离子注入条件实现对SiC氧化速度的人为调控，由此摆脱SiC不同晶面的氧化速度不同的制约。
2)采用本发明的在碳化硅基片上快速生长氧化层的方法，通过氧离子注入，SiC晶格会被有效打乱，成为非晶态，Si-C键的键能降低，从而有效增加了Si与氧的反应速度。同时，注入的氧离子可以补充SiC氧化过程中对氧气的需求，增加了氧化层的生长速度，避免在氧化过程中引入非故意掺杂的杂质。
附图说明
下面结合附图对本发明的具体实施方式作进一步详细的说明
图1为本发明实施例提供的在碳化硅基片上快速生长氧化层的方法的流程图；
图2为本发明实施例提供的在碳化硅基片上快速生长氧化层的方法的注入氧离子的示意图之一；
图3为本发明实施例提供的在碳化硅基片上快速生长氧化层的方法的注入氧离子的示意图之二；
图4为本发明实施例提供的在碳化硅基片上快速生长氧化层的方法的形成氧化层的示意图。
具体实施方式
为了更清楚地说明本发明，下面结合优选实施例对本发明做进一步的说明。本领域技术人员应当理解，下面所具体描述的内容是说明性的而非限制性的，不应以此限制本发明的保护范围。
如图1所示，本实施例提供的在碳化硅基片上快速生长氧化层的方法包括如下步骤：
S1：在SiC基片1上选取待生长氧化层的区域；
S2：如图2和3所示，通过离子注入的方式对上述待生长氧化层的区域注入氧 离子2，形成氧离子注入层3；
S3：如图4所示，将形成上述氧离子注入层3后的SiC基片1进行高温氧化处理，形成氧化层4，且氧化层4的氧化深度大于或等于氧离子注入层3的氧离子注入深度。
在本实施例的一种优选实施方式中，上述步骤S2中，注入的氧离子2的能量为10keV至1000keV。
在本实施例的一种优选实施方式中，上述步骤S2中，注入的氧离子2的剂量为1×10 14cm -2至1×10 18cm -2。
在本实施例的一种优选实施方式中，上述步骤S2中，注入的氧离子2的温度为0-500℃。
在本实施例的一种优选实施方式中，上述步骤S2中，氧离子2的注入角度为0-45°，以实现不同的氧离子注入深度和对SiC晶格的不同轰击效果。此处的注入角度指的是氧离子2的注入方向与SiC基片1表面法线之间的夹角。例如，图2所示的注入角度为0；图2所示的注入角度为30°。
在本实施例的一种优选实施方式中，上述步骤S2中，注入的氧离子2为由氧原子剥离电子后形成的氧离子，或者为由氧分子剥离电子后形成的氧离子团。
在本实施例的一种优选实施方式中，上述步骤S2中，在注入氧离子2的同时、或者在注入氧离子2之前或之后对上述待生长氧化层的区域注入伴随离子，以获得注入多种元素离子的综合效果。上述伴随离子为氮离子、硅离子、铝离子、硼离子和/或磷离子。
在本实施例的一种优选实施方式中，上述步骤S3中，高温氧化处理的温度为800-2000℃。
在本实施例的一种优选实施方式中，上述步骤S3中，高温氧化处理的气氛为干氧气氛或湿氧气氛。
在本实施例的一种优选实施方式中，上述干氧气氛为携带H、NO、N 2O、NO 2、或POCL 3气体的干氧气氛，上述湿氧气氛为携带H、NO、N 2O、NO 2、或POCL 3气体的湿氧气氛。
采用本实施例的在碳化硅基片上快速生长氧化层的方法，通过氧离子注入，SiC晶格会被有效打乱，成为非晶态，Si-C键的键能降低，从而有效增加了Si与氧的反应速度。同时，注入的氧离子可以补充SiC氧化过程中对氧气的需求，增加了氧化 层的生长速度，避免在氧化过程中引入非故意掺杂的杂质。
采用本实施例的在碳化硅基片上快速生长氧化层的方法，可以将SiC的氧化速度有效提高一个数量级以上，并且可以通过改变氧离子注入条件实现对SiC氧化速度的人为调控，由此摆脱SiC不同晶面的氧化速度不同的制约。
本实施例的在碳化硅基片上快速生长氧化层的方法，可以适用于通过氧离子注入来改变氧化场所、氧化机制、氧化速率和氧化膜以及界面性质的所有半导体器件制备工艺。
显然，本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无法对所有的实施方式予以穷举。凡是属于本发明的技术方案所引伸出的显而易见的变化或变动仍处于本发明的保护范围之列。

Claims (10)

  1. 一种在碳化硅基片上快速生长氧化层的方法，其特征在于，该方法包括如下步骤：
    S1：在SiC基片(1)上选取待生长氧化层的区域；
    S2：通过离子注入的方式对所述待生长氧化层的区域注入氧离子(2)，形成氧离子注入层(3)；
    S3：将形成所述氧离子注入层(3)后的SiC基片(1)进行高温氧化处理，形成氧化层(4)，且所述氧化层(4)的氧化深度大于或等于所述氧离子注入层(3)的氧离子注入深度。
  2. 根据权利要求1所述的在碳化硅基片上快速生长氧化层的方法，其特征在于，所述步骤S2中，注入的所述氧离子(2)的能量为10keV至1000keV。
  3. 根据权利要求1所述的在碳化硅基片上快速生长氧化层的方法，其特征在于，所述步骤S2中，注入的所述氧离子(2)的剂量为1×10 14cm -2至1×10 18cm -2。
  4. 根据权利要求1所述的在碳化硅基片上快速生长氧化层的方法，其特征在于，所述步骤S2中，注入的所述氧离子(2)的温度为0-500℃。
  5. 根据权利要求1所述的在碳化硅基片上快速生长氧化层的方法，其特征在于，所述步骤S2中，所述氧离子(2)的注入角度为0-45°。
  6. 根据权利要求1所述的在碳化硅基片上快速生长氧化层的方法，其特征在于，所述步骤S3中，所述高温氧化处理的温度为800-2000℃。
  7. 根据权利要求1所述的在碳化硅基片上快速生长氧化层的方法，其特征在于，所述步骤S2中，注入的所述氧离子(2)为由氧原子剥离电子后形成的氧离子，或者为由氧分子剥离电子后形成的氧离子团。
  8. 根据权利要求1所述的在碳化硅基片上快速生长氧化层的方法，其特征在于，所述步骤S2中，在所述注入氧离子(2)的同时、或者在所述注入氧离子(2)之前或之后对所述待生长氧化层的区域注入伴随离子，且所述伴随离子为氮离子、硅离子、铝离子、硼离子和/或磷离子。
  9. 根据权利要求1所述的在碳化硅基片上快速生长氧化层的方法，其特征在于，所述步骤S3中，所述高温氧化处理的气氛为干氧气氛或湿氧气氛。
  10. 根据权利要求9所述的在碳化硅基片上快速生长氧化层的方法，其特征在 于，所述干氧气氛为携带H、NO、N 2O、NO 2、或POCL 3气体的干氧气氛；所述湿氧气氛为携带H、NO、N 2O、NO 2、或POCL 3气体的湿氧气氛。
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CN108847384A (zh) * 2018-06-11 2018-11-20 重庆伟特森电子科技有限公司 一种在碳化硅基片上生长氧化层的方法
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610411A (en) * 1991-09-24 1997-03-11 Rohm Co., Ltd. Silicon carbide bipolar semiconductor device with birdsbeak isolation structure
CN102420130A (zh) * 2011-07-01 2012-04-18 上海华力微电子有限公司 通过离子注入工艺来控制氧化膜厚度的方法
CN103472533A (zh) * 2013-09-26 2013-12-25 山东建筑大学 一种离子注入制备掺铒碳化硅光波导的方法
CN105810722A (zh) * 2016-03-16 2016-07-27 中国科学院半导体研究所 一种碳化硅mosfet器件及其制备方法
CN107946180A (zh) * 2017-11-27 2018-04-20 北京品捷电子科技有限公司 一种在碳化硅基片上快速生长氧化层的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003282845A (ja) * 2002-03-20 2003-10-03 Mitsubishi Electric Corp 炭化ケイ素基板の製造方法およびその製造方法により製造された炭化ケイ素基板、ならびに、ショットキーバリアダイオードおよび炭化ケイ素薄膜の製造方法
JP3808814B2 (ja) * 2002-08-26 2006-08-16 株式会社ルネサステクノロジ 半導体装置の製造方法
CN102347265B (zh) * 2010-07-28 2014-07-02 中芯国际集成电路制造(上海)有限公司 防止存储器穿通电压降低的方法及存储器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5610411A (en) * 1991-09-24 1997-03-11 Rohm Co., Ltd. Silicon carbide bipolar semiconductor device with birdsbeak isolation structure
CN102420130A (zh) * 2011-07-01 2012-04-18 上海华力微电子有限公司 通过离子注入工艺来控制氧化膜厚度的方法
CN103472533A (zh) * 2013-09-26 2013-12-25 山东建筑大学 一种离子注入制备掺铒碳化硅光波导的方法
CN105810722A (zh) * 2016-03-16 2016-07-27 中国科学院半导体研究所 一种碳化硅mosfet器件及其制备方法
CN107946180A (zh) * 2017-11-27 2018-04-20 北京品捷电子科技有限公司 一种在碳化硅基片上快速生长氧化层的方法

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