JP4428187B2 - 誘電体磁器組成物及び電子部品 - Google Patents
誘電体磁器組成物及び電子部品 Download PDFInfo
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- JP4428187B2 JP4428187B2 JP2004297874A JP2004297874A JP4428187B2 JP 4428187 B2 JP4428187 B2 JP 4428187B2 JP 2004297874 A JP2004297874 A JP 2004297874A JP 2004297874 A JP2004297874 A JP 2004297874A JP 4428187 B2 JP4428187 B2 JP 4428187B2
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Description
実質的に主成分で構成されたコアの周囲に、副成分が主成分に拡散されたシェルを持つ複数の誘電体粒子を有する誘電体磁器組成物であって、
平均粒径の値を示す誘電体粒子を対象とした場合に、前記シェルの最大厚みt1と最小厚みt2の差(t1−t2)が、前記誘電体粒子の半径Rの6〜60%に制御されていることを特徴とする誘電体磁器組成物が提供される。
第1副成分としてMgO,CaO,BaO及びSrOから選択される少なくとも1種と、
第2副成分として酸化シリコンと、
第3副成分としてV2 O5 ,MoO3 及びWO3 から選択される少なくとも1種と、
第4副成分としてR1の酸化物(但し、R1はSc,Er,Tm,Yb及びLuから選択される少なくとも1種)と、
第5副成分としてCaZrO3 またはCaO+ZrO2 と、
第6副成分としてR2の酸化物(但し、R2はY、Dy、Ho、Tb、Gd及びEuから選択される少なくとも1種)と、
第7副成分としてMnOとを含有し、
前記主成分100モルに対する各副成分の比率が、
第1副成分:0.1〜3モル、
第2副成分:2〜10モル、
第3副成分:0.01〜0.5モル、
第4副成分:0.5〜7モル(但し、第4副成分のモル数は、R1単独での比率である)、
第5副成分:0<第5副成分≦5モル、
第6副成分:9モル以下(但し、第6副成分のモル数は、R2単独での比率である)、
第7副成分:0.5モル以下、である。
第1副成分としてAEの酸化物(但し、AEはMg、Ca、Ba及びSrから選択される少なくとも1種)と、
第2副成分としてRの酸化物(但し、RはY、Dy、Tm、Ho及びErから選択される少なくとも1種)と、
第3副成分としてMxSiO3 (但し、Mは、Ba、Ca、Sr、Li、Bから選択される少なくとも1種であり、M=Baの場合にはx=1、M=Caの場合にはx=1、M=Srの場合にはx=1、M=Liの場合にはx=2、M=Bの場合にはx=2/3である)と、
第4副成分としてMnOと、
第5副成分としてV2 O5 、MoO3 及びWO3 から選択される少なくとも1種と、
第6副成分としてCaZrO3 またはCaO+ZrO2 とを含有し、
前記主成分100モルに対する各副成分の比率が、
第1副成分:0〜0.1モル(但し、0モルと0.1モルを除く)、
第2副成分:1〜7モル(但し、1モルと7モルを除く)、
第3副成分:2〜10モル、
第4副成分:0〜0.5モル(但し、0モルを除く)、
第5副成分:0.01〜0.5モル、
第6副成分:0〜5モル(但し、0モルと5モルを除く)、である。
図1は本発明の一実施形態に係る積層セラミックコンデンサの概略断面図、図2は図1に示す誘電体層2の要部拡大断面図、図3はシェル厚が不均一な本発明の実施例(試料4)に相当する結晶粒の微細構造をTEMにより観察した写真、図4はシェルの一部が欠け、コアが剥き出しになっている本発明の比較例(試料9)に相当する結晶粒の微細構造をTEMにより観察した写真、図5はシェル厚が均一な本発明の比較例(試料8)に相当する結晶粒の微細構造をTEMにより観察した写真、図6は図3のTEM写真を模式的に表した図、図7は図4のTEM写真を模式的に表した図、図8は図5のTEM写真を模式的に表した図、図9は実施例においてシェルの最大厚みt1と最小厚みt2の差(t1−t2)の算出方法を説明する概念図、である。
図1に示すように、本発明の一実施形態に係る電子部品としての積層セラミックコンデンサ1は、誘電体層2と内部電極層3とが交互に積層されたコンデンサ素子本体10を有する。コンデンサ素子本体10の両端部には、素子本体10の内部で交互に配置された内部電極層3と各々導通する一対の外部電極4が形成してある。内部電極層3は、各端面がコンデンサ素子本体10の対向する2端部の表面に交互に露出するように積層してある。一対の外部電極4は、コンデンサ素子本体10の両端部に形成され、交互に配置された内部電極層3の露出端面に接続されて、コンデンサ回路を構成する。
誘電体層2の組成は、本発明では特に限定されないが、たとえば以下の誘電体磁器組成物で構成される。
その組成は、主成分として組成式(BaO)m ・TiO2 で表され、前記式中のモル比mがm=0.990〜1.035のチタン酸バリウムを含有し、
第1副成分としてMgO,CaO,BaO及びSrOから選択される少なくとも1種と、
第2副成分として酸化シリコンと、
第3副成分としてV2 O5 ,MoO3 及びWO3 から選択される少なくとも1種と、
第4副成分としてR1の酸化物(但し、R1はSc,Er,Tm,Yb及びLuから選択される少なくとも1種)と、
第5副成分としてCaZrO3 またはCaO+ZrO2 と、
第6副成分としてR2の酸化物(但し、R2はY、Dy、Ho、Tb、Gd及びEuから選択される少なくとも1種)と、
第7副成分としてMnOとを含有するものである。そして、チタン酸バリウムを[(BaO)0.990〜1.035 ・TiO2 ]に換算したとき、[(BaO)0.990〜1.035 ・TiO2 ]100モルに対する比率が、
第1副成分:0.1〜3モル、
第2副成分:2〜10モル、
第3副成分:0.01〜0.5モル、
第4副成分:0.5〜7モル(但し、第4副成分のモル数は、R1単独での比率である)、
第5副成分:0<第5副成分≦5モル、
第6副成分:9モル以下(但し、第6副成分のモル数は、R2単独での比率である)、
第7副成分:0.5モル以下、である。
第1副成分としてAEの酸化物(但し、AEはMg、Ca、Ba及びSrから選択される少なくとも1種)と、
第2副成分としてRの酸化物(但し、RはY、Dy、Tm、Ho及びErから選択される少なくとも1種)と、
第3副成分としてMxSiO3 (但し、Mは、Ba、Ca、Sr、Li、Bから選択される少なくとも1種であり、M=Baの場合にはx=1、M=Caの場合にはx=1、M=Srの場合にはx=1、M=Liの場合にはx=2、M=Bの場合にはx=2/3である)と、
第4副成分としてMnOと、
第5副成分としてV2 O5 、MoO3 及びWO3 から選択される少なくとも1種と、
第6副成分としてCaZrO3 またはCaO+ZrO2 とを含有するものである。そして、チタン酸バリウムを[(BaO)0.990〜1.035 ・TiO2 ]に換算したとき、[(BaO)0.990〜1.035 ・TiO2 ]100モルに対する比率が、
第1副成分:0〜0.1モル(但し、0モルと0.1モルを除く)、
第2副成分:1〜7モル(但し、1モルと7モルを除く)、
第3副成分:2〜10モル、
第4副成分:0〜0.5モル(但し、0モルを除く)、
第5副成分:0.01〜0.5モル、
第6副成分:0〜5モル(但し、0モルと5モルを除く)、である。
図2に示すように、誘電体層2は、複数の誘電体粒子(結晶粒)2aと、隣接する複数の誘電体粒子2a間に形成された粒界相2bとを含んで構成される。
図1に示す内部電極層3は、実質的に電極として作用する卑金属の導電材で構成される。導電材として用いる卑金属としては、NiまたはNi合金が好ましい。Ni合金としては、Mn、Cr、Co、Al、Ru、Rh、Ta、Re、Os、Ir、Pt及びWなどから選ばれる1種以上とNiとの合金が好ましく、合金中のNi含有量は95重量%以上であることが好ましい。なお、NiまたはNi合金中には、P、C、Nb、Fe、Cl、B、Li、Na、K、F、S等の各種微量成分が0.1重量%以下程度含まれていてもよい。本実施形態では、内部電極層3の厚さは、好ましくは2μm未満、より好ましくは1.5μm以下と薄層化されている。
図1に示す外部電極4としては、通常Ni,Pd,Ag,Au,Cu,Pt,Rh,Ru,Ir等の少なくとも1種又はそれらの合金を用いることができる。通常は、Cu,Cu合金、Ni又はNi合金等や、Ag,Ag−Pd合金、In−Ga合金等が使用される。外部電極4の厚さは用途に応じて適時決定されればよいが、通常10〜200μm程度であることが好ましい。
次に、本実施形態に係る積層セラミックコンデンサ1を製造する方法の一例を説明する。
誘電体原料の作製
まず、チタン酸バリウム原料及び副成分原料を用意した。チタン酸バリウム原料としては、平均粒径0.25μmのBaTiO3 (以下、BTともいう)を用いた。副成分原料としては、平均粒径が0.01〜0.1μmの、MgOと、MnOと、V2 O5 と、(Ba0.6 Ca0.4 )SiO3 (以下、BCGともいう)と、Y2 O3 と、Yb2 O3 と、CaZrO3 とを用いた。BCGは、BaCO3 ,CaCO3 及びSiO2 をボールミルにより16時間湿式混合し、乾燥後、1150℃で空気中で焼成し、さらに、ボールミルにより100時間湿式粉砕することにより製造した。CaZrO3 は、CaCO3 及びZrO3 をボールミルにより16時間湿式混合し、乾燥後、1150℃で空気中で焼成し、さらに、ボールミルにより24時間湿式粉砕することにより製造した。
次に、得られた誘電体原料にポリビニルブチラール樹脂およびエタノール系の有機溶媒を添加し、再度ボールミルで混合し、ペースト化して誘電体層用ペーストを得た。
得られた誘電体層用ペーストを用いてドクターブレード法により、PETフィルム上にグリーンシートを形成した。この上に内部電極用ペーストをスクリーン印刷法により印刷した。その後、ふたとなるグリーンシートをPETフィルムから剥離し、厚さが約300μmとなるように複数枚積層し、その上に内部電極用ペーストを印刷したシートをPETフィルムから剥離しつつ所望の枚数(この場合は5枚)積層し、更に再びふたとなるグリーンシートを積層し、圧着して、グリーンチップを得た。なお、このとき、グリーン状態の誘電体層の厚みは3.5μmとした。
得られた焼結体を厚み10μmまで加工した後、イオンミリングにより試料をさらに薄片化した。その後、走査型透過電子顕微鏡(TEM)にて観察を行い、結晶粒(グレイン)2aと粒界相2bにより構成されていることを確認した。
得られた焼結体を研磨し、エッチングを施した後、走査型電子顕微鏡(SEM)にて研磨面の観察を行い、コード法によって、結晶粒2aの形状を球と仮定して、該結晶粒の平均粒径を測定した。平均粒径は、測定点数250点の平均値とした。その結果、0.32μmであった。
上記平均粒径が0.32μmの結晶粒の微細構造を透過型電子顕微鏡(TEM)により観察した写真を図3〜5に、これらを模式的に表したものを図6〜8に示す。
図3,6及び図5,8を見ると、いずれも、誘電体粒子(結晶粒)は、実質的に主成分としてのチタン酸バリウムで構成されたコアの周囲に、副成分がチタン酸バリウムに拡散されたシェル(副成分拡散層)を持つコアシェル構造を有することが確認できるが、図3,6では、シェル厚が不均一になっているのに対し、図5,8ではシェル厚が均一になっている。一方、図4,7を見ると、シェルの一部が欠け、コアが部分的に剥き出しになっていることが確認できる。
なお、本実施例では、シェル24aの最大厚みt1と最小厚みt2の差(t1−t2)を次のようにして算出した。図9に示すように、上記平均粒径を持つ結晶粒に対して、該結晶粒の略中心を通るように粒の端から端まで一直線になるようにTEMで線分析を行い、その後45度ずらして同一粒径において線分析を行い、拡散領域の差を求め、拡散領域の差の最大値をその粒径での拡散領域の差とした。これをn=10の粒で行い、平均値を算出した(図9参照)。
得られたチップ焼結体の端面をサンドブラストにて研磨した後、外部電極としてIn−Gaを塗布し、図1に示す積層セラミックコンデンサの試料を得た。
得られた各コンデンサ試料について、比誘電率ε、静電容量の温度特性(TC)、TCバイアス及び信頼性を評価した。結果を表1に示す。
これに対し、拡散領域の差が本発明の範囲内(6〜60%)である場合には、誘電率が高く、温度特性がX8Rを満足し、しかもTCバイアス特性に優れることが確認できた。
第1仮焼時に添加する副成分原料の量(添加量)を、それぞれの副成分原料の最終的な添加量の10%、20%、40%と変化させた以外は、実施例1の試料4と同様にして、実施例1と同様の評価を行った。結果を表2に示す。
第1仮焼の保持温度を、400℃、600℃、800℃と変化させた以外は、実施例1の試料4と同様にして、実施例1と同様の評価を行った。結果を表3に示す。
10… コンデンサ素子本体
2… 誘電体層
2a… 誘電体粒子(結晶粒)
22a… コア
24a… シェル
2b… 粒界相
3… 内部電極層
4… 外部電極
Claims (10)
- 実質的に主成分で構成されたコアの周囲に、副成分が主成分に拡散されたシェルを持つ複数の誘電体粒子を有する誘電体磁器組成物であって、
前記主成分は、チタン酸バリウムを含み、
前記副成分は、
第1副成分としてMgO,CaO,BaO及びSrOから選択される少なくとも1種と、
第2副成分としてBaO、CaOおよびSiO 2 からなる複合酸化物と、第3副成分としてV 2 O 5 ,MoO 3 及びWO 3 から選択される少なくとも1種と、
第4副成分としてR1の酸化物(但し、R1はSc,Er,Tm,Yb及びLuから選択される少なくとも1種)と、
第5副成分としてCaZrO 3 またはCaO+ZrO 2 と、
第6副成分としてR2の酸化物(但し、R2はY、Dy、Ho、Tb、Gd及びEuから選択される少なくとも1種)と、
第7副成分としてMnOとを含有し、
前記主成分100モルに対する各副成分の比率が、
第1副成分:0.1〜3モル、
第2副成分:2〜10モル、
第3副成分:0.01〜0.5モル、
第4副成分:0.5〜7モル(但し、第4副成分のモル数は、R1単独での比率である)、
第5副成分:0<第5副成分≦5モル、
第6副成分:9モル以下(但し、第6副成分のモル数は、R2単独での比率である)、
第7副成分:0.5モル以下、であり、
平均粒径の値を示す誘電体粒子を対象とした場合に、前記シェルの最大厚みt1と最小厚みt2の差(t1−t2)が、前記誘電体粒子の半径Rの6〜60%に制御されていることを特徴とする誘電体磁器組成物。 - 実質的に主成分で構成されたコアの周囲に、副成分が主成分に拡散されたシェルを持つ複数の誘電体粒子を有する誘電体磁器組成物であって、
前記主成分は、チタン酸バリウムを含み、
前記副成分は、
第1副成分としてAEの酸化物(但し、AEはMg、Ca、Ba及びSrから選択される少なくとも1種)と、
第2副成分としてRの酸化物(但し、RはY、Dy、Tm、Ho及びErから選択される少なくとも1種)と、
第3副成分としてMxSiO 3 (但し、Mは、Ba、Ca、Sr、Li、Bから選択される少なくとも1種であり、M=Baの場合にはx=1、M=Caの場合にはx=1、M=Srの場合にはx=1、M=Liの場合にはx=2、M=Bの場合にはx=2/3である)と、
第4副成分としてMnOと、
第5副成分としてV 2 O 5 、MoO 3 及びWO 3 から選択される少なくとも1種と、
第6副成分としてCaZrO 3 またはCaO+ZrO 2 とを含有し、
前記主成分100モルに対する各副成分の比率が、
第1副成分:0〜0.1モル(但し、0モルと0.1モルを除く)、
第2副成分:1〜7モル(但し、1モルと7モルを除く)、
第3副成分:2〜10モル、
第4副成分:0〜0.5モル(但し、0モルを除く)、
第5副成分:0.01〜0.5モル、
第6副成分:0〜5モル(但し、0モルと5モルを除く)、であり、
平均粒径の値を示す誘電体粒子を対象とした場合に、前記シェルの最大厚みt1と最小厚みt2の差(t1−t2)が、前記誘電体粒子の半径Rの6〜60%に制御されていることを特徴とする誘電体磁器組成物。 - 誘電体磁器組成物で構成してある誘電体層を有する電子部品であって、
前記誘電体磁器組成物が、請求項1または2に記載の誘電体磁器組成物で構成されていることを特徴とする電子部品。 - 誘電体磁器組成物で構成してある誘電体層と、内部電極層とが交互に積層してあるコンデンサ素子本体を有する積層セラミックコンデンサであって、
前記誘電体磁器組成物が、請求項1〜3のいずれかに記載の誘電体磁器組成物で構成されていることを特徴とする積層セラミックコンデンサ。 - 実質的に主成分で構成されたコアの周囲に、副成分が主成分に拡散されたシェルを持つ複数の誘電体粒子を有する誘電体磁器組成物を製造する方法であって、
前記主成分は、チタン酸バリウムを含み、
前記副成分は、
第1副成分としてMgO,CaO,BaO及びSrOから選択される少なくとも1種と、
第2副成分としてBaO、CaOおよびSiO 2 からなる複合酸化物と、第3副成分としてV 2 O 5 ,MoO 3 及びWO 3 から選択される少なくとも1種と、
第4副成分としてR1の酸化物(但し、R1はSc,Er,Tm,Yb及びLuから選択される少なくとも1種)と、
第5副成分としてCaZrO 3 またはCaO+ZrO 2 と、
第6副成分としてR2の酸化物(但し、R2はY、Dy、Ho、Tb、Gd及びEuから選択される少なくとも1種)と、
第7副成分としてMnOとを含有し、
前記主成分100モルに対する各副成分の比率が、
第1副成分:0.1〜3モル、
第2副成分:2〜10モル、
第3副成分:0.01〜0.5モル、
第4副成分:0.5〜7モル(但し、第4副成分のモル数は、R1単独での比率である)、
第5副成分:0<第5副成分≦5モル、
第6副成分:9モル以下(但し、第6副成分のモル数は、R2単独での比率である)、
第7副成分:0.5モル以下、であり、
前記主成分の原料に対して、前記各副成分の原料の一部を添加して第1仮焼を行い、第1仮焼済み粉体を得る工程と、
前記第1仮焼済み粉体に対して、残りの前記各副成分の原料を添加して第2仮焼を行い、第2仮焼済み粉体を得る工程と、
前記第2仮焼済み粉体を焼成する工程と、を有し、
平均粒径の値を示す誘電体粒子を対象とした場合に、前記シェルの最大厚みt1と最小厚みt2の差(t1−t2)が、前記誘電体粒子の半径Rの6〜60%に制御されていることを特徴とする誘電体磁器組成物の製造方法。 - 実質的に主成分で構成されたコアの周囲に、副成分が主成分に拡散されたシェルを持つ複数の誘電体粒子を有する誘電体磁器組成物を製造する方法であって、
前記主成分は、チタン酸バリウムを含み、
前記副成分は、
第1副成分としてAEの酸化物(但し、AEはMg、Ca、Ba及びSrから選択される少なくとも1種)と、
第2副成分としてRの酸化物(但し、RはY、Dy、Tm、Ho及びErから選択される少なくとも1種)と、
第3副成分としてMxSiO 3 (但し、Mは、Ba、Ca、Sr、Li、Bから選択される少なくとも1種であり、M=Baの場合にはx=1、M=Caの場合にはx=1、M=Srの場合にはx=1、M=Liの場合にはx=2、M=Bの場合にはx=2/3である)と、
第4副成分としてMnOと、
第5副成分としてV 2 O 5 、MoO 3 及びWO 3 から選択される少なくとも1種と、
第6副成分としてCaZrO 3 またはCaO+ZrO 2 とを含有し、
前記主成分100モルに対する各副成分の比率が、
第1副成分:0〜0.1モル(但し、0モルと0.1モルを除く)、
第2副成分:1〜7モル(但し、1モルと7モルを除く)、
第3副成分:2〜10モル、
第4副成分:0〜0.5モル(但し、0モルを除く)、
第5副成分:0.01〜0.5モル、
第6副成分:0〜5モル(但し、0モルと5モルを除く)、であり、
前記主成分の原料に対して、前記各副成分の原料の一部を添加して第1仮焼を行い、第1仮焼済み粉体を得る工程と、
前記第1仮焼済み粉体に対して、残りの前記各副成分の原料を添加して第2仮焼を行い、第2仮焼済み粉体を得る工程と、
前記第2仮焼済み粉体を焼成する工程と、を有し、
平均粒径の値を示す誘電体粒子を対象とした場合に、前記シェルの最大厚みt1と最小厚みt2の差(t1−t2)が、前記誘電体粒子の半径Rの6〜60%に制御されていることを特徴とする誘電体磁器組成物の製造方法。 - 前記第2仮焼の保持温度が450〜550℃である請求項5または6に記載の誘電体磁器組成物の製造方法。
- 前記第1仮焼済み粉体を得る工程において、前記主成分の原料に対して添加される前記各副成分の原料の割合が、前記各副成分の原料の最終的な添加量の40%以下(但し、0%は含まない)である請求項5〜7のいずれかに記載の誘電体磁器組成物の製造方法。
- 前記第1仮焼の保持温度が400〜800℃である請求項5〜8のいずれかに記載の誘電体磁器組成物の製造方法。
- 前記第2仮焼済み粉体を焼成する工程において、焼成時間が0.5〜4時間である請求項5〜9のいずれかに記載の誘電体磁器組成物の製造方法。
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KR100731867B1 (ko) | 2007-06-25 |
ATE423387T1 (de) | 2009-03-15 |
US7297403B2 (en) | 2007-11-20 |
CN1776844B (zh) | 2010-06-23 |
DE602005012769D1 (de) | 2009-04-02 |
EP1648004A1 (en) | 2006-04-19 |
TWI270902B (en) | 2007-01-11 |
KR20060052218A (ko) | 2006-05-19 |
EP1648004B1 (en) | 2009-02-18 |
CN1776844A (zh) | 2006-05-24 |
US20060088709A1 (en) | 2006-04-27 |
TW200620348A (en) | 2006-06-16 |
JP2006111466A (ja) | 2006-04-27 |
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