JP4202502B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4202502B2
JP4202502B2 JP37487898A JP37487898A JP4202502B2 JP 4202502 B2 JP4202502 B2 JP 4202502B2 JP 37487898 A JP37487898 A JP 37487898A JP 37487898 A JP37487898 A JP 37487898A JP 4202502 B2 JP4202502 B2 JP 4202502B2
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Japan
Prior art keywords
wiring
film
insulating layer
circuit
semiconductor
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Expired - Fee Related
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JP37487898A
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English (en)
Japanese (ja)
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JP2000194014A5 (enExample
JP2000194014A (ja
Inventor
舜平 山崎
優 山崎
潤 小山
隆之 池田
寛 柴田
英人 北角
健司 福永
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP37487898A priority Critical patent/JP4202502B2/ja
Publication of JP2000194014A publication Critical patent/JP2000194014A/ja
Priority to US09/837,877 priority patent/US7276730B2/en
Publication of JP2000194014A5 publication Critical patent/JP2000194014A5/ja
Application granted granted Critical
Publication of JP4202502B2 publication Critical patent/JP4202502B2/ja
Priority to US13/443,585 priority patent/US8643015B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/01—Head-up displays
    • G02B27/017—Head mounted
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP37487898A 1998-12-28 1998-12-28 半導体装置 Expired - Fee Related JP4202502B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP37487898A JP4202502B2 (ja) 1998-12-28 1998-12-28 半導体装置
US09/837,877 US7276730B2 (en) 1998-12-28 2001-04-19 Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US13/443,585 US8643015B2 (en) 1998-12-28 2012-04-10 Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37487898A JP4202502B2 (ja) 1998-12-28 1998-12-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2000194014A JP2000194014A (ja) 2000-07-14
JP2000194014A5 JP2000194014A5 (enExample) 2006-04-27
JP4202502B2 true JP4202502B2 (ja) 2008-12-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP37487898A Expired - Fee Related JP4202502B2 (ja) 1998-12-28 1998-12-28 半導体装置

Country Status (2)

Country Link
US (1) US7276730B2 (enExample)
JP (1) JP4202502B2 (enExample)

Families Citing this family (43)

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JP4076648B2 (ja) 1998-12-18 2008-04-16 株式会社半導体エネルギー研究所 半導体装置
JP4008133B2 (ja) 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
JP4202502B2 (ja) 1998-12-28 2008-12-24 株式会社半導体エネルギー研究所 半導体装置
US8158980B2 (en) 2001-04-19 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a pixel matrix circuit that includes a pixel TFT and a storage capacitor
US6590229B1 (en) 1999-01-21 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for production thereof
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
US7474002B2 (en) * 2001-10-30 2009-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having dielectric film having aperture portion
CN1186822C (zh) * 2002-09-23 2005-01-26 中国科学院长春应用化学研究所 有机薄膜晶体管及制备方法
CN100449779C (zh) * 2002-10-07 2009-01-07 株式会社半导体能源研究所 半导体器件及其制造方法
KR100542986B1 (ko) * 2003-04-29 2006-01-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터 제조 방법 및 이를 이용한 표시장치
KR100543004B1 (ko) * 2003-09-18 2006-01-20 삼성에스디아이 주식회사 평판표시장치
KR100601370B1 (ko) * 2004-04-28 2006-07-13 삼성에스디아이 주식회사 박막 트랜지스터 및 그를 이용한 유기 전계 발광 표시 장치
KR100675636B1 (ko) 2004-05-31 2007-02-02 엘지.필립스 엘시디 주식회사 Ｇｏｌｄｄ구조 및 ｌｄｄ구조의 ｔｆｔ를 동시에포함하는 구동회로부 일체형 액정표시장치
JP5152448B2 (ja) * 2004-09-21 2013-02-27 カシオ計算機株式会社 画素駆動回路及び画像表示装置
KR100731750B1 (ko) * 2005-06-23 2007-06-22 삼성에스디아이 주식회사 박막트랜지스터 및 이를 이용한 유기전계발광표시장치의제조방법
KR100741976B1 (ko) * 2005-08-25 2007-07-23 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
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US7495258B2 (en) * 2006-05-17 2009-02-24 Tpo Displays Corp. N-channel TFT and OLED display apparatus and electronic device using the same
KR101261609B1 (ko) * 2006-07-06 2013-05-06 삼성디스플레이 주식회사 박막 트랜지스터, 표시판 및 그 제조 방법
KR100878284B1 (ko) * 2007-03-09 2009-01-12 삼성모바일디스플레이주식회사 박막트랜지스터와 그 제조 방법 및 이를 구비한유기전계발광표시장치
KR101404439B1 (ko) 2007-06-29 2014-06-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치 및 전자 기기
US9041202B2 (en) * 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
KR20180137606A (ko) 2008-10-24 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
TWI529942B (zh) * 2009-03-27 2016-04-11 半導體能源研究所股份有限公司 半導體裝置
KR101476817B1 (ko) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
KR101843558B1 (ko) 2009-10-09 2018-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 시프트 레지스터, 표시 장치, 및 그 구동 방법
WO2011046048A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101862808B1 (ko) * 2010-06-18 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2012073862A1 (ja) * 2010-12-01 2012-06-07 シャープ株式会社 半導体装置、ｔｆｔ基板、ならびに半導体装置およびｔｆｔ基板の製造方法
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
KR101899477B1 (ko) 2011-11-18 2018-09-18 삼성디스플레이 주식회사 박막 트랜지스터, 그 제조방법 및 이를 포함하는 유기 발광 표시장치
US10004259B2 (en) * 2012-06-28 2018-06-26 Rai Strategic Holdings, Inc. Reservoir and heater system for controllable delivery of multiple aerosolizable materials in an electronic smoking article
JP5909198B2 (ja) 2013-01-21 2016-04-26 株式会社ジャパンディスプレイ 液晶表示パネル及び電子機器
JP6400961B2 (ja) 2013-07-12 2018-10-03 株式会社半導体エネルギー研究所 表示装置
JP5779690B2 (ja) * 2014-05-02 2015-09-16 株式会社半導体エネルギー研究所 表示装置及び電子機器
US10490475B2 (en) * 2015-06-03 2019-11-26 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation after oxide removal
CN107403804B (zh) * 2016-05-17 2020-10-30 群创光电股份有限公司 显示设备
JP2017142537A (ja) * 2017-05-11 2017-08-17 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP6782211B2 (ja) * 2017-09-08 2020-11-11 株式会社東芝 透明電極、それを用いた素子、および素子の製造方法
JP6853770B2 (ja) * 2017-11-30 2021-03-31 株式会社Ｊｏｌｅｄ 半導体装置および表示装置
JP2019050394A (ja) * 2018-10-31 2019-03-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器

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