JP4005270B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4005270B2
JP4005270B2 JP17471499A JP17471499A JP4005270B2 JP 4005270 B2 JP4005270 B2 JP 4005270B2 JP 17471499 A JP17471499 A JP 17471499A JP 17471499 A JP17471499 A JP 17471499A JP 4005270 B2 JP4005270 B2 JP 4005270B2
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JP
Japan
Prior art keywords
film
semiconductor device
manufacturing
capacitor
forming
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Expired - Fee Related
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JP17471499A
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Japanese (ja)
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JP2000031404A (ja
Inventor
奇南 金
東鎭 鄭
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2000031404A publication Critical patent/JP2000031404A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
JP17471499A 1998-06-20 1999-06-21 半導体装置の製造方法 Expired - Fee Related JP4005270B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019980023272A KR100279297B1 (ko) 1998-06-20 1998-06-20 반도체 장치 및 그의 제조 방법
KR199823272 1998-06-20

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007174271A Division JP2007294995A (ja) 1998-06-20 2007-07-02 半導体装置

Publications (2)

Publication Number Publication Date
JP2000031404A JP2000031404A (ja) 2000-01-28
JP4005270B2 true JP4005270B2 (ja) 2007-11-07

Family

ID=19540170

Family Applications (2)

Application Number Title Priority Date Filing Date
JP17471499A Expired - Fee Related JP4005270B2 (ja) 1998-06-20 1999-06-21 半導体装置の製造方法
JP2007174271A Pending JP2007294995A (ja) 1998-06-20 2007-07-02 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007174271A Pending JP2007294995A (ja) 1998-06-20 2007-07-02 半導体装置

Country Status (8)

Country Link
US (2) US6172386B1 (zh)
JP (2) JP4005270B2 (zh)
KR (1) KR100279297B1 (zh)
CN (1) CN100539013C (zh)
DE (1) DE19926711B4 (zh)
FR (1) FR2780199B1 (zh)
GB (1) GB2338595B (zh)
TW (1) TW418523B (zh)

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KR100292819B1 (ko) * 1998-07-07 2001-09-17 윤종용 커패시터및그의제조방법
US6586790B2 (en) * 1998-07-24 2003-07-01 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US6174735B1 (en) * 1998-10-23 2001-01-16 Ramtron International Corporation Method of manufacturing ferroelectric memory device useful for preventing hydrogen line degradation
JP3475100B2 (ja) * 1998-11-26 2003-12-08 シャープ株式会社 半導体装置の製造方法
US6440850B1 (en) * 1999-08-27 2002-08-27 Micron Technology, Inc. Structure for an electrical contact to a thin film in a semiconductor structure and method for making the same
JP3276351B2 (ja) * 1999-12-13 2002-04-22 松下電器産業株式会社 半導体装置の製造方法
US7262130B1 (en) * 2000-01-18 2007-08-28 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US6376370B1 (en) * 2000-01-18 2002-04-23 Micron Technology, Inc. Process for providing seed layers for using aluminum, copper, gold and silver metallurgy process for providing seed layers for using aluminum, copper, gold and silver metallurgy
US6420262B1 (en) * 2000-01-18 2002-07-16 Micron Technology, Inc. Structures and methods to enhance copper metallization
US6651658B1 (en) * 2000-08-03 2003-11-25 Sequal Technologies, Inc. Portable oxygen concentration system and method of using the same
KR100382719B1 (ko) * 2000-08-25 2003-05-09 삼성전자주식회사 강유전체 커패시터를 포함하는 반도체 장치 및 그 제조방법
US6887716B2 (en) * 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
JP2004523924A (ja) * 2001-03-21 2004-08-05 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 電子デバイス
DE10114406A1 (de) * 2001-03-23 2002-10-02 Infineon Technologies Ag Verfahren zur Herstellung ferroelektrischer Speicherzellen
JP2003059905A (ja) * 2001-07-31 2003-02-28 Applied Materials Inc エッチング方法、キャパシタの製造方法、および半導体装置
JP2003204043A (ja) * 2001-10-24 2003-07-18 Fujitsu Ltd 半導体装置及びその製造方法
JP2003152165A (ja) 2001-11-15 2003-05-23 Fujitsu Ltd 半導体装置およびその製造方法
JP4641702B2 (ja) * 2002-11-20 2011-03-02 ソニー株式会社 強誘電体型不揮発性半導体メモリ及びその製造方法
US20040153611A1 (en) * 2003-02-04 2004-08-05 Sujat Jamil Methods and apparatus for detecting an address conflict
US7287126B2 (en) * 2003-07-30 2007-10-23 Intel Corporation Methods and apparatus for maintaining cache coherency
US7220665B2 (en) * 2003-08-05 2007-05-22 Micron Technology, Inc. H2 plasma treatment
JP4308691B2 (ja) * 2004-03-19 2009-08-05 富士通マイクロエレクトロニクス株式会社 半導体基板および半導体基板の製造方法
CN100463182C (zh) * 2004-10-19 2009-02-18 精工爱普生株式会社 铁电体存储器及其制造方法
JP4257537B2 (ja) * 2005-06-02 2009-04-22 セイコーエプソン株式会社 強誘電体層の製造方法、電子機器の製造方法、強誘電体メモリ装置の製造方法、圧電素子の製造方法、およびインクジェット式記録ヘッドの製造方法
JP2007073909A (ja) * 2005-09-09 2007-03-22 Oki Electric Ind Co Ltd 半導体メモリの製造方法
US7772014B2 (en) * 2007-08-28 2010-08-10 Texas Instruments Incorporated Semiconductor device having reduced single bit fails and a method of manufacture thereof
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
JP2013120825A (ja) 2011-12-07 2013-06-17 Elpida Memory Inc 半導体装置及びその製造方法
US11621269B2 (en) * 2019-03-11 2023-04-04 Globalfoundries U.S. Inc. Multi-level ferroelectric memory cell
CN113400696B (zh) * 2021-06-26 2022-02-22 宜宾学院 大口径高压纤维增强柔性复合管连接方法

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KR100266046B1 (ko) * 1990-09-28 2000-09-15 야스카와 히데아키 반도체장치
JPH04158570A (ja) * 1990-10-22 1992-06-01 Seiko Epson Corp 半導体装置の構造及びその製造方法
EP0516031A1 (en) * 1991-05-29 1992-12-02 Ramtron International Corporation Stacked ferroelectric memory cell and method
US5206788A (en) * 1991-12-12 1993-04-27 Ramtron Corporation Series ferroelectric capacitor structure for monolithic integrated circuits and method
US5468684A (en) * 1991-12-13 1995-11-21 Symetrix Corporation Integrated circuit with layered superlattice material and method of fabricating same
US5723171A (en) * 1992-10-23 1998-03-03 Symetrix Corporation Integrated circuit electrode structure and process for fabricating same
JP3299837B2 (ja) * 1993-07-22 2002-07-08 シャープ株式会社 半導体記憶装置
JPH07111318A (ja) * 1993-10-12 1995-04-25 Olympus Optical Co Ltd 強誘電体メモリ
US5965942A (en) * 1994-09-28 1999-10-12 Sharp Kabushiki Kaisha Semiconductor memory device with amorphous diffusion barrier between capacitor and plug
JPH08191133A (ja) * 1994-11-10 1996-07-23 Sony Corp 半導体素子のキャパシタ構造及びその作製方法
US5977577A (en) * 1994-11-15 1999-11-02 Radiant Technologies, Inc Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation
CN1075243C (zh) * 1994-12-28 2001-11-21 松下电器产业株式会社 集成电路用电容元件及其制造方法
US5739049A (en) * 1995-08-21 1998-04-14 Hyundai Electronics Industries Co., Ltd. Method for fabricating semiconductor device having a capacitor and a method of forming metal wiring on a semiconductor substrate
JPH09102587A (ja) * 1995-10-05 1997-04-15 Olympus Optical Co Ltd 強誘電体薄膜素子
KR100200704B1 (ko) * 1996-06-07 1999-06-15 윤종용 강유전체 메모리 장치 및 그 제조 방법
KR100197566B1 (ko) * 1996-06-29 1999-06-15 윤종용 강유전체 메모리 장치
JPH1022463A (ja) * 1996-07-02 1998-01-23 Sony Corp 積層構造及びその製造方法、キャパシタ構造並びに不揮発性メモリ
EP0837504A3 (en) * 1996-08-20 1999-01-07 Ramtron International Corporation Partially or completely encapsulated ferroelectric device
US5990513A (en) * 1996-10-08 1999-11-23 Ramtron International Corporation Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion
KR100268453B1 (ko) * 1998-03-30 2000-11-01 윤종용 반도체 장치 및 그것의 제조 방법
KR100279297B1 (ko) * 1998-06-20 2001-02-01 윤종용 반도체 장치 및 그의 제조 방법

Also Published As

Publication number Publication date
KR20000002485A (ko) 2000-01-15
JP2000031404A (ja) 2000-01-28
CN100539013C (zh) 2009-09-09
FR2780199A1 (fr) 1999-12-24
JP2007294995A (ja) 2007-11-08
TW418523B (en) 2001-01-11
US6515323B1 (en) 2003-02-04
CN1239828A (zh) 1999-12-29
DE19926711A1 (de) 1999-12-23
US6172386B1 (en) 2001-01-09
GB9909488D0 (en) 1999-06-23
KR100279297B1 (ko) 2001-02-01
GB2338595A (en) 1999-12-22
GB2338595B (en) 2000-08-23
FR2780199B1 (fr) 2005-04-15
DE19926711B4 (de) 2006-08-24

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