JP3919398B2 - 半導体モジュール - Google Patents

半導体モジュール Download PDF

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Publication number
JP3919398B2
JP3919398B2 JP30532799A JP30532799A JP3919398B2 JP 3919398 B2 JP3919398 B2 JP 3919398B2 JP 30532799 A JP30532799 A JP 30532799A JP 30532799 A JP30532799 A JP 30532799A JP 3919398 B2 JP3919398 B2 JP 3919398B2
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JP
Japan
Prior art keywords
semiconductor module
external heat
insulating substrate
conductive pattern
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP30532799A
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English (en)
Japanese (ja)
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JP2001127238A5 (https=
JP2001127238A (ja
Inventor
利彰 篠原
晃 藤田
貴信 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP30532799A priority Critical patent/JP3919398B2/ja
Priority to US09/534,043 priority patent/US6787900B2/en
Publication of JP2001127238A publication Critical patent/JP2001127238A/ja
Publication of JP2001127238A5 publication Critical patent/JP2001127238A5/ja
Application granted granted Critical
Publication of JP3919398B2 publication Critical patent/JP3919398B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP30532799A 1999-10-27 1999-10-27 半導体モジュール Expired - Lifetime JP3919398B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP30532799A JP3919398B2 (ja) 1999-10-27 1999-10-27 半導体モジュール
US09/534,043 US6787900B2 (en) 1999-10-27 2000-03-24 Semiconductor module and insulating substrate thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30532799A JP3919398B2 (ja) 1999-10-27 1999-10-27 半導体モジュール

Publications (3)

Publication Number Publication Date
JP2001127238A JP2001127238A (ja) 2001-05-11
JP2001127238A5 JP2001127238A5 (https=) 2005-08-04
JP3919398B2 true JP3919398B2 (ja) 2007-05-23

Family

ID=17943788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30532799A Expired - Lifetime JP3919398B2 (ja) 1999-10-27 1999-10-27 半導体モジュール

Country Status (2)

Country Link
US (1) US6787900B2 (https=)
JP (1) JP3919398B2 (https=)

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CN1331217C (zh) * 2003-11-10 2007-08-08 乾坤科技股份有限公司 晶片封装结构及其基板
DE10361696B4 (de) * 2003-12-30 2016-03-10 Infineon Technologies Ag Verfahren zum Herstellen einer integrierten Halbleiterschaltungsanordnung
JP4715283B2 (ja) * 2005-04-25 2011-07-06 日産自動車株式会社 電力変換装置及びその製造方法
US7508067B2 (en) * 2005-10-13 2009-03-24 Denso Corporation Semiconductor insulation structure
US8174114B2 (en) * 2005-12-15 2012-05-08 Taiwan Semiconductor Manufacturing Go. Ltd. Semiconductor package structure with constraint stiffener for cleaning and underfilling efficiency
US8829661B2 (en) * 2006-03-10 2014-09-09 Freescale Semiconductor, Inc. Warp compensated package and method
JP4967447B2 (ja) * 2006-05-17 2012-07-04 株式会社日立製作所 パワー半導体モジュール
EP2149903B1 (en) * 2007-05-18 2019-10-30 Sansha Electric Manufacturing Company, Limited Semiconductor module for electric power
JP5061717B2 (ja) * 2007-05-18 2012-10-31 富士電機株式会社 半導体モジュール及び半導体モジュールの製造方法
SI2149902T1 (sl) * 2007-05-18 2019-03-29 Sansha Electric Manufacturing Company, Limited Močnostni polprevodniški moduli in naprava za električni oblok, ki le-tega uporablja
DE102008009510B3 (de) * 2008-02-15 2009-07-16 Danfoss Silicon Power Gmbh Verfahren zum Niedertemperatur-Drucksintern
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US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate
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US8314487B2 (en) * 2009-12-18 2012-11-20 Infineon Technologies Ag Flange for semiconductor die
JP5601384B2 (ja) * 2011-02-08 2014-10-08 富士電機株式会社 半導体モジュール用放熱板の製造方法、その放熱板およびその放熱板を用いた半導体モジュール
JP5737080B2 (ja) * 2011-08-31 2015-06-17 サンケン電気株式会社 半導体装置およびその製造方法
JP5716637B2 (ja) * 2011-11-04 2015-05-13 住友電気工業株式会社 半導体モジュール及び半導体モジュールの製造方法
JP5766354B2 (ja) 2012-07-13 2015-08-19 三菱電機株式会社 半導体装置
KR20150053874A (ko) * 2012-09-13 2015-05-19 후지 덴키 가부시키가이샤 반도체 장치, 반도체 장치에 대한 방열 부재의 부착 방법 및 반도체 장치의 제조 방법
KR20150060036A (ko) * 2013-11-25 2015-06-03 삼성전기주식회사 전력 반도체 모듈 및 그 제조 방법
US9620877B2 (en) 2014-06-17 2017-04-11 Semiconductor Components Industries, Llc Flexible press fit pins for semiconductor packages and related methods
JP6356550B2 (ja) * 2014-09-10 2018-07-11 三菱電機株式会社 半導体装置およびその製造方法
US9431311B1 (en) 2015-02-19 2016-08-30 Semiconductor Components Industries, Llc Semiconductor package with elastic coupler and related methods
JP6515694B2 (ja) 2015-06-12 2019-05-22 富士電機株式会社 半導体装置
JP6485257B2 (ja) * 2015-07-01 2019-03-20 富士電機株式会社 半導体装置及び半導体装置の製造方法
DE102015115122B4 (de) * 2015-09-09 2022-05-19 Infineon Technologies Ag Leistungshalbleitermodul mit zweiteiligem Gehäuse
JP6065089B2 (ja) * 2015-11-05 2017-01-25 住友電気工業株式会社 半導体モジュール
CN115172290B (zh) 2016-07-14 2024-12-13 株式会社东芝 陶瓷电路基板及半导体模块
JP6743916B2 (ja) * 2017-02-13 2020-08-19 富士電機株式会社 半導体装置及び半導体装置の製造方法
WO2018166878A1 (en) * 2017-03-15 2018-09-20 Abb Schweiz Ag A solid state switching device
JP6972622B2 (ja) * 2017-04-03 2021-11-24 富士電機株式会社 半導体装置および半導体装置の製造方法
JP7014012B2 (ja) * 2018-03-30 2022-02-01 三菱電機株式会社 半導体装置、半導体装置の製造方法および電力変換装置
JP2018133598A (ja) * 2018-06-05 2018-08-23 三菱電機株式会社 半導体装置およびその製造方法
JP6906654B2 (ja) * 2018-06-05 2021-07-21 三菱電機株式会社 半導体装置およびその製造方法
JP7045978B2 (ja) 2018-12-07 2022-04-01 三菱電機株式会社 半導体装置および電力変換装置
JP7193730B2 (ja) 2019-03-26 2022-12-21 三菱電機株式会社 半導体装置
EP3872854A1 (en) * 2020-02-27 2021-09-01 Littelfuse, Inc. Power module housing with improved protrusion design
CN112420636B (zh) * 2020-11-19 2022-09-06 四川长虹空调有限公司 芯片散热结构
JP7790024B2 (ja) * 2021-03-01 2025-12-23 富士電機株式会社 半導体装置及び半導体装置の製造方法
EP4432345B1 (en) * 2023-03-16 2025-05-07 Hitachi Energy Ltd Insulated metal substrate and method for producing an insulated metal substrate

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US6787900B2 (en) 2004-09-07
US20030094682A1 (en) 2003-05-22
JP2001127238A (ja) 2001-05-11

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