JP3788037B2 - ＧａＮ単結晶基板 - Google Patents

ＧａＮ単結晶基板 Download PDF

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Publication number
JP3788037B2
JP3788037B2 JP17127698A JP17127698A JP3788037B2 JP 3788037 B2 JP3788037 B2 JP 3788037B2 JP 17127698 A JP17127698 A JP 17127698A JP 17127698 A JP17127698 A JP 17127698A JP 3788037 B2 JP3788037 B2 JP 3788037B2
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Prior art keywords
gan
substrate
mask
gaas
single crystal
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JP17127698A
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JP2000012900A (ja
JP2000012900A5 (enExample
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健作 元木
達也 西本
拓司 岡久
直樹 松本
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP17127698A priority Critical patent/JP3788037B2/ja
Priority to TW088109629A priority patent/TW417315B/zh
Priority to US09/333,879 priority patent/US6413627B1/en
Priority to DE69943012T priority patent/DE69943012D1/de
Priority to EP99111739A priority patent/EP0966047B1/en
Priority to CNB991086449A priority patent/CN1196176C/zh
Priority to KR1019990023075A priority patent/KR100348175B1/ko
Publication of JP2000012900A publication Critical patent/JP2000012900A/ja
Priority to HK00103240.2A priority patent/HK1024099B/xx
Publication of JP2000012900A5 publication Critical patent/JP2000012900A5/ja
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Publication of JP3788037B2 publication Critical patent/JP3788037B2/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP17127698A 1998-06-18 1998-06-18 ＧａＮ単結晶基板 Expired - Lifetime JP3788037B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP17127698A JP3788037B2 (ja) 1998-06-18 1998-06-18 ＧａＮ単結晶基板
TW088109629A TW417315B (en) 1998-06-18 1999-06-09 GaN single crystal substrate and its manufacture method of the same
US09/333,879 US6413627B1 (en) 1998-06-18 1999-06-15 GaN single crystal substrate and method of producing same
EP99111739A EP0966047B1 (en) 1998-06-18 1999-06-17 GaN single crystal substrate and method of producing same
DE69943012T DE69943012D1 (de) 1998-06-18 1999-06-17 GaN-Einkristallinessubstrat und Herstellungsverfahren
CNB991086449A CN1196176C (zh) 1998-06-18 1999-06-18 GaN单晶衬底
KR1019990023075A KR100348175B1 (ko) 1998-06-18 1999-06-18 ＧａＮ단결정기판 및 그 제조방법
HK00103240.2A HK1024099B (en) 1998-06-18 2000-05-31 Gan single crystal substrate

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JP17127698A JP3788037B2 (ja) 1998-06-18 1998-06-18 ＧａＮ単結晶基板

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JP2006034698A Division JP4089730B2 (ja) 2006-02-13 2006-02-13 ＧａＮ単結晶基板の製造方法

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JP2000012900A JP2000012900A (ja) 2000-01-14
JP2000012900A5 JP2000012900A5 (enExample) 2006-03-23
JP3788037B2 true JP3788037B2 (ja) 2006-06-21

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Cited By (5)

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EP1916321A1 (en) 2006-10-02 2008-04-30 Ricoh Company, Ltd. Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
EP2055811A2 (en) 2007-10-24 2009-05-06 Sumitomo Electric Industries, Ltd. Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor
US7718002B2 (en) 2007-03-07 2010-05-18 Ricoh Company, Ltd. Crystal manufacturing apparatus
US8110484B1 (en) 2010-11-19 2012-02-07 Sumitomo Electric Industries, Ltd. Conductive nitride semiconductor substrate and method for producing the same
US8129082B2 (en) 2007-03-06 2012-03-06 Ricoh Company, Ltd. Electrophotographic photoreceptor, image forming method using electrophotographic photoreceptor, image forming apparatus, and process cartridge for image forming apparatus

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JP3283802B2 (ja) 1997-09-29 2002-05-20 日本電気株式会社 選択成長法を用いた半導体層及びその成長方法、選択成長法を用いた窒化物系半導体層及びその成長方法、窒化物系半導体発光素子とその製造方法
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP4623799B2 (ja) * 2000-06-23 2011-02-02 ローム株式会社 半導体発光素子の製法および半導体レーザ
US6562644B2 (en) 2000-08-08 2003-05-13 Matsushita Electric Industrial Co., Ltd. Semiconductor substrate, method of manufacturing the semiconductor substrate, semiconductor device and pattern forming method
US6780239B2 (en) 2000-10-19 2004-08-24 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
JP3679720B2 (ja) * 2001-02-27 2005-08-03 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP3790677B2 (ja) * 2001-03-19 2006-06-28 株式会社東芝 半導体発光装置及びその製造方法
US6589857B2 (en) 2001-03-23 2003-07-08 Matsushita Electric Industrial Co., Ltd. Manufacturing method of semiconductor film
JP2002284600A (ja) 2001-03-26 2002-10-03 Hitachi Cable Ltd 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
JP3631724B2 (ja) 2001-03-27 2005-03-23 日本電気株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
US8633093B2 (en) 2001-04-12 2014-01-21 Sumitomo Electric Industries Ltd. Oxygen doping method to gallium nitride single crystal substrate
US6773504B2 (en) 2001-04-12 2004-08-10 Sumitomo Electric Industries, Ltd. Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped N-type gallium nitride freestanding single crystal substrate
US7001457B2 (en) 2001-05-01 2006-02-21 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
JP3801125B2 (ja) * 2001-10-09 2006-07-26 住友電気工業株式会社 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法
US7473315B2 (en) 2001-10-09 2009-01-06 Sumitomo Electric Industries, Ltd. AlxInyGa1-x-yN mixture crystal substrate, method of growing AlxInyGa1-x-yN mixture crystal substrate and method of producing AlxInyGa1-x-yN mixture crystal substrate
US6949140B2 (en) 2001-12-05 2005-09-27 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
JP4932121B2 (ja) 2002-03-26 2012-05-16 日本電気株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法
JP3997827B2 (ja) 2002-04-30 2007-10-24 住友電気工業株式会社 窒化ガリウム成長用基板及び窒化ガリウム成長用基板の製造方法並びに窒化ガリウム基板の製造方法
JP4117156B2 (ja) 2002-07-02 2008-07-16 日本電気株式会社 Ｉｉｉ族窒化物半導体基板の製造方法
US7220658B2 (en) * 2002-12-16 2007-05-22 The Regents Of The University Of California Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
US7427555B2 (en) 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
WO2004061923A1 (en) * 2002-12-27 2004-07-22 General Electric Company Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same
US9279193B2 (en) 2002-12-27 2016-03-08 Momentive Performance Materials Inc. Method of making a gallium nitride crystalline composition having a low dislocation density
KR100550491B1 (ko) 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법
JP4969765B2 (ja) * 2003-08-21 2012-07-04 古河電気工業株式会社 面発光レーザ、その面発光レーザを用いた面発光レーザアレイと面発光レーザモジュール、および面発光半導体レーザの製造方法
JP3841092B2 (ja) 2003-08-26 2006-11-01 住友電気工業株式会社 発光装置
JP2005112641A (ja) 2003-10-03 2005-04-28 Sumitomo Electric Ind Ltd 窒化物半導体基板および窒化物半導体基板の製造方法
JP4396816B2 (ja) 2003-10-17 2010-01-13 日立電線株式会社 Ｉｉｉ族窒化物半導体基板およびその製造方法
JP4232605B2 (ja) 2003-10-30 2009-03-04 住友電気工業株式会社 窒化物半導体基板の製造方法と窒化物半導体基板
JP2005191530A (ja) 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
JP2005298269A (ja) * 2004-04-12 2005-10-27 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶基板およびその製造方法ならびにｉｉｉ族窒化物半導体デバイス
CN100413102C (zh) * 2004-04-30 2008-08-20 住友电气工业株式会社 半导体发光装置
JP4714143B2 (ja) * 2004-05-19 2011-06-29 住友電気工業株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法
JP4513480B2 (ja) * 2004-09-28 2010-07-28 住友電気工業株式会社 窒化ガリウム結晶体を製造する方法および窒化ガリウム基板を製造する方法
JP2006179511A (ja) 2004-12-20 2006-07-06 Sumitomo Electric Ind Ltd 発光装置
JP4525353B2 (ja) * 2005-01-07 2010-08-18 住友電気工業株式会社 Ｉｉｉ族窒化物基板の製造方法
EP1881094B8 (en) 2005-05-12 2014-08-27 Ricoh Company, Ltd. Process and apparatus for producing group iii element nitride crystal
KR101186233B1 (ko) * 2005-10-07 2012-09-27 삼성코닝정밀소재 주식회사 휨이 감소된 사파이어/질화갈륨 적층체
JP4192220B2 (ja) 2005-08-10 2008-12-10 株式会社リコー 結晶成長装置および製造方法
JP2007073761A (ja) 2005-09-07 2007-03-22 Sumitomo Electric Ind Ltd 窒化物半導体基板及び窒化物半導体基板の加工方法
US8101020B2 (en) 2005-10-14 2012-01-24 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
JP4720441B2 (ja) 2005-11-02 2011-07-13 日立電線株式会社 青色発光ダイオード用ＧａＮ基板
JP4631681B2 (ja) 2005-12-05 2011-02-16 日立電線株式会社 窒化物系半導体基板及び半導体装置
JP5270088B2 (ja) * 2005-12-15 2013-08-21 エルジー エレクトロニクス インコーポレイティド 垂直型発光素子及びその製造方法
JP4223540B2 (ja) 2006-01-20 2009-02-12 パナソニック株式会社 半導体発光素子、ｉｉｉ族窒化物半導体基板、及びその製造方法
JP4879614B2 (ja) 2006-03-13 2012-02-22 住友化学株式会社 ３−５族窒化物半導体基板の製造方法
US20070215034A1 (en) 2006-03-14 2007-09-20 Hirokazu Iwata Crystal preparing device, crystal preparing method, and crystal
JP4862442B2 (ja) 2006-03-15 2012-01-25 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板の製造方法及びｉｉｉ−ｖ族窒化物系デバイスの製造方法
JP4647525B2 (ja) 2006-03-20 2011-03-09 日本碍子株式会社 Ｉｉｉ族窒化物結晶の製造方法
KR100809033B1 (ko) 2006-05-19 2008-03-03 경희대학교 산학협력단 질화갈륨 자기 직립 기판의 제조방법
JP4816277B2 (ja) * 2006-06-14 2011-11-16 日立電線株式会社 窒化物半導体自立基板及び窒化物半導体発光素子
US7928447B2 (en) 2006-07-17 2011-04-19 Sumitomo Electric Industries, Ltd. GaN crystal substrate, fabricating method of GaN crystal substrate, and light-emitting device
KR101172364B1 (ko) * 2006-11-02 2012-08-08 삼성코닝정밀소재 주식회사 질화갈륨 단결정 기판 및 표면 가공방법
JP5125098B2 (ja) 2006-12-26 2013-01-23 信越半導体株式会社 窒化物半導体自立基板の製造方法
US7749325B2 (en) 2007-01-22 2010-07-06 Sumitomo Electric Industries, Ltd. Method of producing gallium nitride (GaN) independent substrate, method of producing GaN crystal body, and method of producing GaN substrate
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JP2008297191A (ja) * 2007-05-02 2008-12-11 Sumitomo Electric Ind Ltd 窒化ガリウム基板及び窒化ガリウム層の形成方法
JP5026946B2 (ja) * 2007-12-19 2012-09-19 古河電気工業株式会社 窒化物半導体単結晶基板製造方法
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JP2010077022A (ja) * 2009-11-30 2010-04-08 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物結晶基板およびその製造方法ならびにｉｉｉ族窒化物半導体デバイス
JP5195731B2 (ja) * 2009-12-11 2013-05-15 日立電線株式会社 窒化物系半導体基板及び半導体装置
JP5282978B2 (ja) * 2009-12-18 2013-09-04 日立電線株式会社 Ｉｉｉ族窒化物半導体基板
JP2011201759A (ja) * 2010-03-05 2011-10-13 Namiki Precision Jewel Co Ltd 多層膜付き単結晶基板、多層膜付き単結晶基板の製造方法および素子製造方法
JP5732684B2 (ja) * 2010-03-05 2015-06-10 並木精密宝石株式会社 単結晶基板、単結晶基板の製造方法、多層膜付き単結晶基板の製造方法および素子製造方法
JP5518566B2 (ja) * 2010-05-10 2014-06-11 信越半導体株式会社 窒化物半導体自立基板の製造方法
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EP3656895A1 (en) * 2012-01-11 2020-05-27 Osaka University Method for producing group iii nitride crystals
EP2815004B1 (de) * 2012-03-21 2018-01-10 Freiberger Compound Materials GmbH Verfahren zur herstellung von iii-n-einkristallen, und iii-n-einkristall
JP2015044707A (ja) * 2013-08-28 2015-03-12 住友電気工業株式会社 窒化ガリウム基板および半導体デバイス
WO2015114732A1 (ja) * 2014-01-28 2015-08-06 株式会社サイオクス 半導体基板の製造方法
WO2015159342A1 (ja) 2014-04-14 2015-10-22 株式会社サイオクス 窒化物半導体単結晶基板の製造方法
JP2015157760A (ja) * 2015-05-28 2015-09-03 株式会社リコー １３族窒化物結晶および１３族窒化物結晶基板
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Cited By (8)

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Publication number Priority date Publication date Assignee Title
EP1916321A1 (en) 2006-10-02 2008-04-30 Ricoh Company, Ltd. Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
US8337798B2 (en) 2006-10-02 2012-12-25 Ricoh Company, Ltd. Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
US8829530B2 (en) 2006-10-02 2014-09-09 Ricoh Company, Ltd. Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
US8129082B2 (en) 2007-03-06 2012-03-06 Ricoh Company, Ltd. Electrophotographic photoreceptor, image forming method using electrophotographic photoreceptor, image forming apparatus, and process cartridge for image forming apparatus
US7718002B2 (en) 2007-03-07 2010-05-18 Ricoh Company, Ltd. Crystal manufacturing apparatus
US9222199B2 (en) 2007-03-07 2015-12-29 Ricoh Company, Ltd. Crystal manufacturing apparatus
EP2055811A2 (en) 2007-10-24 2009-05-06 Sumitomo Electric Industries, Ltd. Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor
US8110484B1 (en) 2010-11-19 2012-02-07 Sumitomo Electric Industries, Ltd. Conductive nitride semiconductor substrate and method for producing the same

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