JP4879614B2 - 3−5族窒化物半導体基板の製造方法 - Google Patents
3−5族窒化物半導体基板の製造方法 Download PDFInfo
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- JP4879614B2 JP4879614B2 JP2006067012A JP2006067012A JP4879614B2 JP 4879614 B2 JP4879614 B2 JP 4879614B2 JP 2006067012 A JP2006067012 A JP 2006067012A JP 2006067012 A JP2006067012 A JP 2006067012A JP 4879614 B2 JP4879614 B2 JP 4879614B2
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- nitride semiconductor
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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Description
くとも1つを含む3−5族窒化物半導体基板の製造方法が提案される。
被覆率(%)=((d/2)2 ×π・P・100)/S
以上のようにして、下地基板1上に3−5族窒化物半導体層5を所定の厚みにエピタキシャル成長したならば(図1の(e))、3−5族窒化物半導体層5を下地基板1から分離し、3−5族窒化物半導体層5を自立基板として得る(図1の(f))。3−5族窒化物半導体層5を下地基板1から分離するための手段は特に限定されない。下地基板1と3−5族窒化物半導体層5との間には、成長マスク4の働きで谷部1Cに空間が出来ているため、両者を簡単に分離することができる。
下地基板として、サファイアのC面を鏡面研磨したサファイア基板を用いた。無機粒子として、球状のシリカ粒子(宇部日東化成(株)社製、ハイプレシカ(商品名)平均粒径3μm)を用い、これをエタノールに分散させた8重量%スラリーを用いた。該スラリーを停止しているスピナー上で該サファイア基板に塗布した後、500rpmで10秒間回転させ、続けて2500rpmで40秒間回転して該サファイア基板を乾燥させた。サファイア基板上のシリカ粒子の被覆率は87%であった。続いて、該サファイア基板を深さ0.35μmまでドライエッチングして、サファイア基板表面にシリカ粒子の形状に対応した凸部を形成した。
下地基板として、サファイアのC面を鏡面研磨したサファイア基板を用いた。無機粒子として球状のシリカ粒子(宇部日東化成(株)社製、ハイプレシカ(商品名)平均粒径1μm)を用い、これをエタノールに分散させた8重量%スラリーを用いた。該スラリーを停止しているスピナー上で該サファイア基板に塗布した後、500rpmで10秒間回転させ、続けて2500rpmで40秒間回転して該サファイア基板を乾燥させた。サファイア基板上のシリカ粒子の被覆率は83%であった。続いて、該サファイア基板を深さ0.21μmまでドライエッチングして、サファイア基板表面にシリカ粒子の形状に対応した凸部を形成した。
下地基板として、サファイアのC面を鏡面研磨したサファイア基板を用いた。無機粒子として、コロイダルシリカ(日本触媒(株)製、シーホスターKE−W50(商品名)、平均粒径550nm、水溶媒)に含まれている球状シリカ粒子を用いた。該サファイア基板をスピナー上にセットし、800rpmで回転させながら、16重量%に希釈したスラリーを滴下し、さらに8000rpmで40秒間回転して該サファイア基板を乾燥させた。サファイア基板上のシリカ粒子の被覆率は92%であった。続いて、該サファイア基板を深さ0.1μmまでドライエッチングして、サファイア基板表面にシリカ粒子の形状に対応した凸部を形成した。
続いて、サファイア基板上にシリカ粒子がついている状態で、蒸着にて二酸化珪素(SiO2 )膜をサファイア基板上に2000Å形成した。
下地基板であるサファイア基板の加工を行うことなく、実施例1と同様にして、加工していないサファイア基板上に3−5族窒化物半導体層のエピタキシャル成長を行った。最終的にアンドープGaN層を、20μmまで成長させた後、成長温度の1040℃から略室温までゆっくりと冷却しても、形成されたGaN層がサファイア基板からの剥離が生じることはなかった。さらに成長を続けて最終的にアンドープGaN層を、45μmまで成長させた後、成長温度の1040℃から略室温までゆっくりと冷却したところ、該GaN層がサファイア基板から剥離することはなく、サファイア基板とともに一緒に割れた。
1A 表面
1B 凸部
1C 谷部
2 無機粒子
3、13 被膜
4 成長マスク
5 3−5族窒化物半導体層
Claims (7)
- 3−5族窒化物半導体基板の製造方法において、無機粒子と媒体を含むスラリーをスピンコートにより塗布した後乾燥することにより下地基板上に配置された無機粒子をエッチングマスクとして該下地基板をドライエッチング処理して前記下地基板表面に前記無機粒子の形状に対応した凸部を形成した後、前記下地基板上にエピタキシャル成長マスク用の被膜を形成し、しかる後、前記凸部の上に残留している前記無機粒子を除去することによって前記凸部の各頂部において前記下地基板を露出させ、前記各頂部の下地基板露出面から3−5族窒化物半導体を成長させて3−5族窒化物半導体層を形成し、しかる後、応力を加えて機械的に分離する方法により該3−5族窒化物半導体層を前記下地基板から分離するようにしたことを特徴とする3−5族窒化物半導体基板の製造方法。
- 3−5族窒化物半導体基板の製造方法において、無機粒子と媒体を含むスラリーをスピンコートにより塗布した後乾燥することにより下地基板上に配置された無機粒子をエッチングマスクとして該下地基板をドライエッチング処理して前記下地基板表面に前記無機粒子の形状に対応した凸部を形成した後、前記凸部の上に残留している各無機粒子を除去してから前記下地基板上にエピタキシャル成長マスク用の被膜を形成し、しかる後、前記凸部の頂部の被膜を除去して前記凸部の各頂部のみにおいて前記下地基板が露出するようにしたエピタキシャル成長マスクを形成し、前記各頂部の下地基板露出面から3−5族窒化物半導体を成長させて3−5族窒化物半導体層を形成し、しかる後、応力を加えて機械的に分離する方法により該3−5族窒化物半導体層を前記下地基板から分離するようにしたことを特徴とする3−5族窒化物半導体基板の製造方法。
- 前記3−5族窒化物半導体を成長させる工程で前記下地基板と前記3−5族窒化物半導体層との間にボイドを形成させるようにした請求項1又は2記載の3−5族窒化物半導体基板の製造方法。
- 前記無機粒子が、酸化物、窒化物、炭化物、硼化物、硫化物、セレン化物及び金属からなる群より選ばれる少なくとも1つを含む請求項1、2又は3記載の3−5族窒化物半導体基板の製造方法。
- 前記無機粒子が、シリカ、アルミナ、ジルコニア、チタニア、セリア、マグネシア、酸
化亜鉛、酸化スズおよびイットリウムアルミニウムガーネットの各々からなる群より選ばれる少なくとも1つである請求項4記載の3−5族窒化物半導体基板の製造方法。 - 前記無機粒子の形状が、球状、板状、針状又は不定形である請求項1、2、3、4又は5記載の3−5族窒化物半導体基板の製造方法。
- 前記3−5族窒化物半導体層と前記下地基板とを分離する前記工程が、前記3−5族窒化物半導体層を成長後、雰囲気温度を降下させることにより前記下地基板を自然剥離する工程を含む請求項1または2記載の3−5族窒化物半導体基板の製造方法。
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US12/224,984 US20090093122A1 (en) | 2006-03-13 | 2007-03-08 | Method For Producing Group III-V Nitride Semiconductor Substrate |
KR1020087023815A KR101286927B1 (ko) | 2006-03-13 | 2007-03-08 | 3-5족 질화물 반도체 기판의 제조 방법 |
CN2007800080860A CN101432850B (zh) | 2006-03-13 | 2007-03-08 | Ⅲ-ⅴ族氮化物半导体基板的制造方法 |
TW096107986A TWI435375B (zh) | 2006-03-13 | 2007-03-08 | Iii-v族氮化物半導體基板之製造方法 |
DE112007000578T DE112007000578T5 (de) | 2006-03-13 | 2007-03-08 | Verfahren zur Herstellung eines Substrats eines Nitridhalbleiters der Gruppe III-V |
GB0818662A GB2450652A (en) | 2006-03-13 | 2007-03-08 | Method for manufacturing group 3-5 nitride semiconductor substrate |
PCT/JP2007/055161 WO2007105782A1 (ja) | 2006-03-13 | 2007-03-08 | 3-5族窒化物半導体基板の製造方法 |
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KR100921789B1 (ko) * | 2007-10-24 | 2009-10-15 | 주식회사 실트론 | 화합물 반도체 기판 제조 방법 |
JP5232798B2 (ja) * | 2007-11-16 | 2013-07-10 | 株式会社アルバック | 基板処理方法 |
KR100956499B1 (ko) * | 2008-08-01 | 2010-05-07 | 주식회사 실트론 | 금속층을 가지는 화합물 반도체 기판, 그 제조 방법 및이를 이용한 화합물 반도체 소자 |
WO2010068460A2 (en) * | 2008-12-12 | 2010-06-17 | 3M Innovative Properties Company | Particle reflow etching |
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US11807764B2 (en) | 2018-07-10 | 2023-11-07 | Samsung Display Co., Ltd. | Ink compositions, production method thereof, and method of forming quantum dot polymer composite pattern using the same |
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CN101432850B (zh) | 2011-03-23 |
KR20080100466A (ko) | 2008-11-18 |
JP2007243090A (ja) | 2007-09-20 |
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TWI435375B (zh) | 2014-04-21 |
CN101432850A (zh) | 2009-05-13 |
WO2007105782A1 (ja) | 2007-09-20 |
KR101286927B1 (ko) | 2013-07-16 |
US20090093122A1 (en) | 2009-04-09 |
GB0818662D0 (en) | 2008-11-19 |
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