CN102117869B - 一种剥离发光二极管衬底的方法 - Google Patents
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Abstract
本发明公开了一种剥离发光二极管衬底的方法,通过对GaN外延层侧面进行腐蚀,形成孔洞型结构,配合外延生长的非填满型图形化蓝宝石衬底,使GaN外延层与蓝宝石衬底分离。本发明可以有效地降低GaN基外延生长中的位错密度,提高晶格质量,且能快速剥离蓝宝石衬底,具有成本低、不会造成GaN薄膜内伤、改善光电器件的性能、提高发光效率的优点。
Description
技术领域
本发明涉及一种剥离发光二极管衬底的方法,尤其是一种制作高亮度氮化镓基发光二极管过程中采用非激光剥离蓝宝石衬底的方法。
背景技术
发光二极管(英文为Light Emitting Diode,简称LED)是利用半导体的P-N结电致发光原理制成的一种半导体发光器件。LED具有无污染、亮度高、功耗小、寿命长、工作电压低、 易小型化等优点。自20世纪90年代氮化镓(GaN)基LED开发成功以来,随着研究的不断进展,其发光亮度也不断提高,应用领域也越来越广,用GaN基LED半导体灯替代现有的照明光源将成为势不可挡的趋势。然而半导体照明要进入千家万户,还有许多问题需要解决,其中最核心的就是生产成本和发光效率。
半导体发光二极管的几何结构包括两类:横向结构和垂直结构。以蓝宝石为生长衬底的横向结构的大功率氮化镓基半导体发光二极管的主要问题包括散热效率低,电流拥塞,电流密度低和生产成本高。为解决横向结构的大功率氮化镓基半导体发光二极管的散热问题,倒装焊技术被提出。但倒装焊技术工艺复杂,生产成本高,以SiC晶片为原始生长衬底的传统的垂直结构的氮化镓基半导体发光二极管的两个电极分别在生长衬底的两侧,具备优良的散热效率,电流分布均匀,电流拥塞改善,电流密度增大,充分利用发光层的材料等优点。以蓝宝石为原始生长衬底的传统的垂直结构的氮化镓基半导体发光二极管的两个电极分别在支持衬底的两侧,该发光二极管具备散热效率高,电流分布均匀,电流拥塞改善,电流密度增大充分利用发光层的材料,光取出效率提高等优点。蓝宝石是电绝缘材料,因此需要剥离生长衬底。日本的Nichia公司和德国的Osram公司分别推出了激光剥离蓝宝石衬底,制备垂直结构的LED芯片技术,通过这项技术有效解决了散热和出光问题,在N面上可以制备微结构,提高光提取效率,同时可以重复利用蓝宝石。采用激光剥离技术和键合技术相结合可以将GaN基LED外延层转移到其它高电导率的衬底上(如Si、Cu和Al等材料),从而消除蓝宝衬底对GaN基LED带来的不利影响,但是该技术存在如下问题:(1)激光剥离后容易造成氮化镓内裂,而导致漏电问题;(2)采用激光剥离蓝宝石衬底的工艺过程中产生的温度非常高,而且晶圆键合层距离蓝宝石衬底和GaN的界面仅几微米,因此键合层将受到影响(如重新熔化);(3)激光剥离技术与旧制程不兼容,机台设备昂贵。
发明内容
为解决上述发光二极管的所存在的问题,本发明旨在提供一种剥离发光二极管衬底的方法。本发明可以有效地降低GaN基外延生长中的位错密度,提高晶格质量,且能快速剥离蓝宝石衬底,具有成本低、不会造成GaN薄膜内伤、改善光电器件的性能、提高发光效率的优点。
一种剥离发光二极管衬底的方法,包含下列步骤:
1) 提供一蓝宝石衬底;
2) 在衬底表面上形成呈周期性分布的图形化结构;
3) 在图形化蓝宝石衬底上镀一阻挡层,采用研磨工艺使第一阻挡层表面与图形化蓝宝石衬底凸起表面齐平;
4)在图形化蓝宝石衬底上生长GaN外延层,GaN外延层与图形化蓝宝石衬底间存有第一孔洞结构,其中GaN外延层由N-GaN层、量子阱层、P-GaN层组成;
5)在P-GaN层上镀第二阻挡层并采用钻石刀切割出所定义尺寸的芯粒;
6)通过湿蚀刻,对GaN外延层侧面进行腐蚀,形成第二孔洞结构,并实现同时去除第二阻挡层的目的,使得第一孔洞结构扩大形成孔洞结构,这种上下交替的孔洞结构,配合外延生长的非填满型图形化蓝宝石衬底,从而分离GaN外延层与蓝宝石衬底。
优选地,本发明还包含下列步骤:在蓝宝石衬底上镀一过渡层;通过光罩、蚀刻,形成周期性分布的图形化过渡层;去除过渡层,在衬底表面上形成呈周期性分布的图形化结构。
本发明中的阻挡层选自SiO2、SiNX、TiO2或前述的任意组合之一;图形化蓝宝石衬底的形状为矩形或多边形;过渡层选自SiO2、SiNX、TiO2或前述的任意组合之一;研磨工艺可以选用化学研磨、机械研磨或化学机械研磨;湿蚀刻采用的蚀刻液选自HF、NH4F、CH3COOH、H2SO4、H2O2或前述的任意组合之一。
本发明通过在图形化的衬底上填充一阻挡层,形成填充式的图形化衬底,然后再在该衬底生长GaN外延层,由于填充有阻挡层的衬底表面无法生长GaN外延层,GaN外延层与图形化蓝宝石衬底间存有孔洞结构。通过湿蚀刻,对GaN外延层侧面进行腐蚀,并可达到一并去除第二阻挡层的目的,形成孔洞型结构,配合外延生长的非填满型图形化蓝宝石衬底,使GaN外延层与蓝宝石衬底分离。
本发明的有益效果是:本发明不但能有效地降低 GaN 基外延生长中的位错密度,改善晶格质量,且不会造成GaN薄膜内伤,可提升光电器件的性能,有效提高发光效率。
附图说明
图1~图8是本发明一种剥离发光二极管衬底的方法的工艺流程剖视图。
图中:
1 蓝宝石衬底
2 过渡层
3 阻挡层
4 外延层孔洞结构
5 N型GaN层
6 量子阱层
7 P型GaN层
8 保护层
9、10 蚀刻孔洞结构。
具体实施方式
以下结合实施例对本发明作进一步的描述。
下面结合附图和实施例对本发明做进一步说明。
如图1所示,在蓝宝石衬底1上镀SiO2过渡层2。
如图2所示,通过光罩、蚀刻,得呈周期性分布的矩形状图形化SiO2过渡层2。
如图3所示,去除第一阻挡层,形成图形化蓝宝石衬底1。
如图4所示,在蓝宝石衬底上镀SiO2阻挡层3并采用化学机械研磨工艺使SiO2阻挡层3表面与图形化蓝宝石衬底1凸起表面齐平。
如图5所示,在图形化蓝宝石衬底1上生长GaN外延层,使蓝宝石衬底形成非填满型图形化蓝宝石衬底,即GaN外延层与图形化蓝宝石衬底间存有孔洞结构4,其中GaN外延层由N-GaN层5、量子阱层6、P-GaN层7组成。
如图6所示,在P-GaN层7上镀SiNX保护层8并采用钻石刀切割出所定义尺寸的芯粒。
如图7和图8所示,通过湿蚀刻,对GaN外延层侧面进行腐蚀,形成孔洞型结构9和10,配合外延生长的非填满型图形化蓝宝石衬底,使GaN外延层与蓝宝石衬底分离;湿蚀刻采用的蚀刻液由HF、NH4F、CH3COOH、H2SO4、H2O2组成。
以上实施例仅供说明本发明之用,而非对本发明的限制,本技术领域的普通技术人员,在不脱离本发明的精神和范围的情况下,还可以作出各种变换或变化;因此,所有等同的技术方案均属本发明的保护范畴,由各权利要求限定。
Claims (7)
1.一种剥离发光二极管衬底的方法,包含下列步骤:
提供一蓝宝石衬底;
在衬底表面上形成呈周期性分布的图形化结构;
在图形化蓝宝石衬底上镀一阻挡层,采用研磨工艺使第一阻挡层表面与图形化蓝宝石衬底凸起表面齐平;
在图形化蓝宝石衬底上生长GaN外延层,GaN外延层与图形化蓝宝石衬底间存有第一孔洞结构,其中GaN外延层由N-GaN层、量子阱层、P-GaN层组成;
在P-GaN层上镀第二阻挡层并采用钻石刀切割出所定义尺寸的芯粒;
通过湿蚀刻,对GaN外延层侧面进行腐蚀,在N型GaN层与图形化蓝宝石衬底凸起表面的界面处形成第二孔洞结构,并实现同时去除第二阻挡层的目的,使得第一孔洞结构扩大形成孔洞结构,这种上下交替的孔洞结构,配合外延生长的非填满型图形化蓝宝石衬底,从而分离GaN外延层与蓝宝石衬底。
2.根据权利要求1中所述的一种剥离发光二极管衬底的方法,还包含下列步骤:
在蓝宝石衬底上形成一过渡层;
通过光罩、蚀刻,形成周期性分布的图形化过渡层;
去除过渡层,在衬底表面上形成呈周期性分布的图形化结构。
3.根据权利要求2中所述的剥离发光二极管衬底的方法,其特征在于所述过渡层选自SiO2、SiNX、TiO2或前述的任意组合之一。
4.根据权利要求1中所述的剥离发光二极管衬底的方法,其特征在于图形化蓝宝石衬底的形状为矩形或多边形。
5.根据权利要求1中所述的剥离发光二极管衬底的方法,其特征在于所述第一、第二阻挡层选自SiO2、SiNX、TiO2或前述的任意组合之一。
6.根据权利要求1中所述的剥离发光二极管衬底的方法,其特征在于研磨工艺可以选用化学研磨或机械研磨或化学机械研磨。
7.根据权利要求1中所述的剥离发光二极管衬底的方法,其特征在于湿蚀刻采用的蚀刻液选自HF、NH4F、CH3COOH、H2SO4、H2O2或前述的任意组合之一。
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CN111081531B (zh) * | 2019-10-30 | 2022-03-18 | 华灿光电(浙江)有限公司 | 外延层剥离方法 |
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