JP3759108B2 - 接着性が増大した低欠陥密度のｂｅｏｌ相互接続用低誘電率レベル間誘電体被膜を製造する方法 - Google Patents

接着性が増大した低欠陥密度のｂｅｏｌ相互接続用低誘電率レベル間誘電体被膜を製造する方法 Download PDF

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JP3759108B2
JP3759108B2 JP2002568408A JP2002568408A JP3759108B2 JP 3759108 B2 JP3759108 B2 JP 3759108B2 JP 2002568408 A JP2002568408 A JP 2002568408A JP 2002568408 A JP2002568408 A JP 2002568408A JP 3759108 B2 JP3759108 B2 JP 3759108B2
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substrate
coupling agent
silane coupling
coating
applying
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JP2004532514A (ja
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エッカート、アンドルー、ロバート
ヘイ、ジョン、シー
ヘドリック、ジェフリー、カーティス
リー、カン−ウック
リニガー、エリック、ゲールハード
シモニー、エヴァ、エリカ
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International Business Machines Corp
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    • H10P14/6342—
    • H10P14/6334—
    • H10P14/6682—
    • H10W20/074—
    • H10P14/6686—
    • H10P14/6922—

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  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
JP2002568408A 2001-02-21 2002-02-19 接着性が増大した低欠陥密度のｂｅｏｌ相互接続用低誘電率レベル間誘電体被膜を製造する方法 Expired - Fee Related JP3759108B2 (ja)

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Application Number Priority Date Filing Date Title
US09/789,422 US6455443B1 (en) 2001-02-21 2001-02-21 Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density
PCT/US2002/004879 WO2002069381A2 (en) 2001-02-21 2002-02-19 Method of fabricating low-dielectric constant interlevel dielectric films for beol interconnects with enhanced adhesion and low-defect density

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JP2004532514A JP2004532514A (ja) 2004-10-21
JP3759108B2 true JP3759108B2 (ja) 2006-03-22

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US (1) US6455443B1 (enExample)
EP (1) EP1390972B1 (enExample)
JP (1) JP3759108B2 (enExample)
KR (1) KR100516534B1 (enExample)
CN (1) CN1251312C (enExample)
AT (1) ATE333144T1 (enExample)
DE (1) DE60213086T2 (enExample)
ES (1) ES2262797T3 (enExample)
IL (1) IL157506A (enExample)
IN (1) IN2003DE01322A (enExample)
TW (1) TW561551B (enExample)
WO (1) WO2002069381A2 (enExample)

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CN1550036A (zh) 2004-11-24
JP2004532514A (ja) 2004-10-21
IN2003DE01322A (enExample) 2005-05-27
CN1251312C (zh) 2006-04-12
EP1390972A2 (en) 2004-02-25
IL157506A0 (en) 2004-03-28
WO2002069381A3 (en) 2003-12-18
ATE333144T1 (de) 2006-08-15
DE60213086T2 (de) 2006-12-28
TW561551B (en) 2003-11-11
ES2262797T3 (es) 2006-12-01
KR20030071841A (ko) 2003-09-06
IL157506A (en) 2007-06-03
US6455443B1 (en) 2002-09-24
EP1390972B1 (en) 2006-07-12
US20020160600A1 (en) 2002-10-31
KR100516534B1 (ko) 2005-09-22
DE60213086D1 (de) 2006-08-24
WO2002069381A2 (en) 2002-09-06

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