CN1251312C - 用于后端线互连结构的具有增强粘合力及低缺陷密度的低介电常数层间介电膜的制造方法 - Google Patents

用于后端线互连结构的具有增强粘合力及低缺陷密度的低介电常数层间介电膜的制造方法 Download PDF

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Publication number
CN1251312C
CN1251312C CNB028063457A CN02806345A CN1251312C CN 1251312 C CN1251312 C CN 1251312C CN B028063457 A CNB028063457 A CN B028063457A CN 02806345 A CN02806345 A CN 02806345A CN 1251312 C CN1251312 C CN 1251312C
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China
Prior art keywords
coupling agent
silane coupling
substrate
low
dielectric
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Expired - Fee Related
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CNB028063457A
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English (en)
Chinese (zh)
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CN1550036A (zh
Inventor
A·R·艾克特
J·C·海
J·C·海德里克
K－W·李
E·G·里尼格
E·E·西蒙伊
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laminated Bodies (AREA)
CNB028063457A 2001-02-21 2002-02-19 用于后端线互连结构的具有增强粘合力及低缺陷密度的低介电常数层间介电膜的制造方法 Expired - Fee Related CN1251312C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/789,422 2001-02-21
US09/789,422 US6455443B1 (en) 2001-02-21 2001-02-21 Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density

Publications (2)

Publication Number Publication Date
CN1550036A CN1550036A (zh) 2004-11-24
CN1251312C true CN1251312C (zh) 2006-04-12

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CNB028063457A Expired - Fee Related CN1251312C (zh) 2001-02-21 2002-02-19 用于后端线互连结构的具有增强粘合力及低缺陷密度的低介电常数层间介电膜的制造方法

Country Status (12)

Country Link
US (1) US6455443B1 (enExample)
EP (1) EP1390972B1 (enExample)
JP (1) JP3759108B2 (enExample)
KR (1) KR100516534B1 (enExample)
CN (1) CN1251312C (enExample)
AT (1) ATE333144T1 (enExample)
DE (1) DE60213086T2 (enExample)
ES (1) ES2262797T3 (enExample)
IL (1) IL157506A (enExample)
IN (1) IN2003DE01322A (enExample)
TW (1) TW561551B (enExample)
WO (1) WO2002069381A2 (enExample)

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Publication number Publication date
CN1550036A (zh) 2004-11-24
TW561551B (en) 2003-11-11
US6455443B1 (en) 2002-09-24
KR100516534B1 (ko) 2005-09-22
WO2002069381A2 (en) 2002-09-06
DE60213086D1 (de) 2006-08-24
EP1390972A2 (en) 2004-02-25
KR20030071841A (ko) 2003-09-06
IN2003DE01322A (enExample) 2005-05-27
IL157506A (en) 2007-06-03
JP3759108B2 (ja) 2006-03-22
DE60213086T2 (de) 2006-12-28
US20020160600A1 (en) 2002-10-31
WO2002069381A3 (en) 2003-12-18
EP1390972B1 (en) 2006-07-12
ES2262797T3 (es) 2006-12-01
IL157506A0 (en) 2004-03-28
ATE333144T1 (de) 2006-08-15
JP2004532514A (ja) 2004-10-21

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