CN1251312C - 用于后端线互连结构的具有增强粘合力及低缺陷密度的低介电常数层间介电膜的制造方法 - Google Patents

用于后端线互连结构的具有增强粘合力及低缺陷密度的低介电常数层间介电膜的制造方法 Download PDF

Info

Publication number
CN1251312C
CN1251312C CNB028063457A CN02806345A CN1251312C CN 1251312 C CN1251312 C CN 1251312C CN B028063457 A CNB028063457 A CN B028063457A CN 02806345 A CN02806345 A CN 02806345A CN 1251312 C CN1251312 C CN 1251312C
Authority
CN
China
Prior art keywords
substrate
silane coupler
silane
low
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028063457A
Other languages
English (en)
Chinese (zh)
Other versions
CN1550036A (zh
Inventor
A·R·艾克特
J·C·海
J·C·海德里克
K－W·李
E·G·里尼格
E·E·西蒙伊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Core Usa Second LLC
GlobalFoundries Inc
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN1550036A publication Critical patent/CN1550036A/zh
Application granted granted Critical
Publication of CN1251312C publication Critical patent/CN1251312C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
CNB028063457A 2001-02-21 2002-02-19 用于后端线互连结构的具有增强粘合力及低缺陷密度的低介电常数层间介电膜的制造方法 Expired - Fee Related CN1251312C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/789,422 US6455443B1 (en) 2001-02-21 2001-02-21 Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density
US09/789,422 2001-02-21

Publications (2)

Publication Number Publication Date
CN1550036A CN1550036A (zh) 2004-11-24
CN1251312C true CN1251312C (zh) 2006-04-12

Family

ID=25147596

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028063457A Expired - Fee Related CN1251312C (zh) 2001-02-21 2002-02-19 用于后端线互连结构的具有增强粘合力及低缺陷密度的低介电常数层间介电膜的制造方法

Country Status (12)

Country Link
US (1) US6455443B1 (enExample)
EP (1) EP1390972B1 (enExample)
JP (1) JP3759108B2 (enExample)
KR (1) KR100516534B1 (enExample)
CN (1) CN1251312C (enExample)
AT (1) ATE333144T1 (enExample)
DE (1) DE60213086T2 (enExample)
ES (1) ES2262797T3 (enExample)
IL (1) IL157506A (enExample)
IN (1) IN2003DE01322A (enExample)
TW (1) TW561551B (enExample)
WO (1) WO2002069381A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105723245A (zh) * 2013-11-22 2016-06-29 通用电气公司 具有隔层的有机x射线检测器

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6685983B2 (en) * 2001-03-14 2004-02-03 International Business Machines Corporation Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens
US6716771B2 (en) * 2002-04-09 2004-04-06 Intel Corporation Method for post-CMP conversion of a hydrophobic surface of a low-k dielectric layer to a hydrophilic surface
WO2004053205A2 (en) * 2002-07-22 2004-06-24 Massachusetts Institute Of Technolgoy Porous material formation by chemical vapor deposition onto colloidal crystal templates
US6974762B2 (en) * 2002-08-01 2005-12-13 Intel Corporation Adhesion of carbon doped oxides by silanization
JP2004274020A (ja) * 2002-09-24 2004-09-30 Rohm & Haas Electronic Materials Llc 電子デバイス製造
US7005390B2 (en) * 2002-10-09 2006-02-28 Intel Corporation Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
US20040137243A1 (en) * 2002-10-21 2004-07-15 Massachusetts Institute Of Technology Chemical vapor deposition of organosilicate thin films
US7248062B1 (en) 2002-11-04 2007-07-24 Kla-Tencor Technologies Corp. Contactless charge measurement of product wafers and control of corona generation and deposition
KR20040051097A (ko) * 2002-12-11 2004-06-18 패럴린코리아(주) 패럴린(parylene) 고분자 코팅의 접착력을 증진시키는전처리 방법 및 이를 응용한 장치
CN100334695C (zh) * 2003-01-02 2007-08-29 上海华虹（集团）有限公司 一种含硅低介电常数材料炉子固化工艺
TW200421483A (en) * 2003-03-17 2004-10-16 Semiconductor Leading Edge Tec Semiconductor device and method of manufacturing the same
US7164197B2 (en) * 2003-06-19 2007-01-16 3M Innovative Properties Company Dielectric composite material
US6825561B1 (en) 2003-06-19 2004-11-30 International Business Machines Corporation Structure and method for eliminating time dependent dielectric breakdown failure of low-k material
JP4106438B2 (ja) * 2003-06-20 2008-06-25 独立行政法人産業技術総合研究所 多層微細配線インターポーザおよびその製造方法
US6992003B2 (en) * 2003-09-11 2006-01-31 Freescale Semiconductor, Inc. Integration of ultra low K dielectric in a semiconductor fabrication process
US7056840B2 (en) * 2003-09-30 2006-06-06 International Business Machines Corp. Direct photo-patterning of nanoporous organosilicates, and method of use
US6903004B1 (en) 2003-12-16 2005-06-07 Freescale Semiconductor, Inc. Method of making a semiconductor device having a low K dielectric
US7309395B2 (en) * 2004-03-31 2007-12-18 Dielectric Systems, Inc. System for forming composite polymer dielectric film
US7094661B2 (en) * 2004-03-31 2006-08-22 Dielectric Systems, Inc. Single and dual damascene techniques utilizing composite polymer dielectric film
US6962871B2 (en) * 2004-03-31 2005-11-08 Dielectric Systems, Inc. Composite polymer dielectric film
US20060046044A1 (en) * 2004-08-24 2006-03-02 Lee Chung J Porous composite polymer dielectric film
EP1861857A4 (en) * 2004-12-07 2009-09-02 Multi Fineline Electronix Inc MINIATURE CIRCUITS AND INDUCTIVE COMPONENTS AND MANUFACTURING METHOD THEREFOR
US20060128163A1 (en) * 2004-12-14 2006-06-15 International Business Machines Corporation Surface treatment of post-rie-damaged p-osg and other damaged materials
US7446055B2 (en) * 2005-03-17 2008-11-04 Air Products And Chemicals, Inc. Aerosol misted deposition of low dielectric organosilicate films
US20060275547A1 (en) * 2005-06-01 2006-12-07 Lee Chung J Vapor Phase Deposition System and Method
US20060275616A1 (en) * 2005-06-03 2006-12-07 Clough Robert S Silane-based coupling agent
EP1915764A1 (en) * 2005-08-19 2008-04-30 Avx Limited Polymer based solid state capacitors and a method of manufacturing them
US7893703B2 (en) * 2005-08-19 2011-02-22 Kla-Tencor Technologies Corp. Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer
GB0517952D0 (en) * 2005-09-02 2005-10-12 Avx Ltd Method of forming anode bodies for solid state capacitors
JP4616154B2 (ja) * 2005-11-14 2011-01-19 富士通株式会社 半導体装置の製造方法
US7851138B2 (en) * 2007-07-19 2010-12-14 Hitachi Global Storage Technologies, Netherlands, B.V. Patterning a surface comprising silicon and carbon
US7760487B2 (en) * 2007-10-22 2010-07-20 Avx Corporation Doped ceramic powder for use in forming capacitor anodes
US7768773B2 (en) * 2008-01-22 2010-08-03 Avx Corporation Sintered anode pellet etched with an organic acid for use in an electrolytic capacitor
US7852615B2 (en) * 2008-01-22 2010-12-14 Avx Corporation Electrolytic capacitor anode treated with an organometallic compound
US7760488B2 (en) * 2008-01-22 2010-07-20 Avx Corporation Sintered anode pellet treated with a surfactant for use in an electrolytic capacitor
EP2277194A1 (en) * 2008-05-08 2011-01-26 Basf Se Layered structures comprising silicon carbide layers, a process for their manufacture and their use
US8203827B2 (en) * 2009-02-20 2012-06-19 Avx Corporation Anode for a solid electrolytic capacitor containing a non-metallic surface treatment
CN102487057B (zh) * 2010-12-03 2014-03-12 中芯国际集成电路制造(北京)有限公司 金属前介质层及其制造方法
TWI445626B (zh) * 2011-03-18 2014-07-21 Eternal Chemical Co Ltd 製造軟性元件的方法
CN103367107B (zh) * 2012-04-09 2016-04-20 中芯国际集成电路制造(上海)有限公司 改善表面结合力的方法
US20140162054A1 (en) * 2012-12-11 2014-06-12 Industrial Technology Research Institute Interposer layer for enhancing adhesive attraction of poly(p-xylylene) film to substrate
JP5967211B2 (ja) * 2013-04-04 2016-08-10 富士電機株式会社 半導体デバイスの製造方法
US9159556B2 (en) 2013-09-09 2015-10-13 GlobalFoundries, Inc. Alleviation of the corrosion pitting of chip pads
CN105418926B (zh) * 2014-09-12 2018-07-13 中国科学院上海高等研究院 一种含氟萘乙基硅树脂及其制备方法和应用
JP6540361B2 (ja) 2015-08-18 2019-07-10 富士通株式会社 半導体装置及びその製造方法
US9799593B1 (en) * 2016-04-01 2017-10-24 Intel Corporation Semiconductor package substrate having an interfacial layer
US10468243B2 (en) * 2017-11-22 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing semiconductor device and method of cleaning substrate
CN110965045A (zh) * 2018-09-29 2020-04-07 南京理工大学 一种利用Parylene微纳米薄膜对薄壁聚能切割索进行防护的方法
US11500290B2 (en) * 2018-11-13 2022-11-15 International Business Machines Corporation Adhesion promoters
CN110606970A (zh) * 2019-09-30 2019-12-24 福州大学 一种提升涂层与塑料粘结力的塑料表面预处理方法
JP7408010B2 (ja) * 2021-03-10 2024-01-04 三菱電機株式会社 異種材料接合体の製造方法、および異種材料接合体
CN118719508B (zh) * 2024-09-02 2024-12-27 上海派拉纶生物技术股份有限公司 一种含复配偶联剂的Parylene涂层及其制备方法和应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2193864B1 (enExample) * 1972-07-31 1974-12-27 Rhone Poulenc Sa
JPH0791509B2 (ja) * 1985-12-17 1995-10-04 住友化学工業株式会社 半導体用絶縁膜形成塗布液
US4950583A (en) * 1986-09-17 1990-08-21 Brewer Science Inc. Adhesion promoting product and process for treating an integrated circuit substrate therewith
US4732858A (en) * 1986-09-17 1988-03-22 Brewer Science, Inc. Adhesion promoting product and process for treating an integrated circuit substrate
DE69502709T2 (de) * 1994-10-18 1998-12-24 Philips Electronics N.V., Eindhoven Verfahren und herstellung einer dünnen silizium-oxid-schicht
US5760480A (en) * 1995-09-20 1998-06-02 Advanced Micro Devics, Inc. Low RC interconnection
JPH09143420A (ja) * 1995-09-21 1997-06-03 Asahi Glass Co Ltd 低誘電率樹脂組成物
US6071830A (en) * 1996-04-17 2000-06-06 Sony Corporation Method of forming insulating film
US5989998A (en) * 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105723245A (zh) * 2013-11-22 2016-06-29 通用电气公司 具有隔层的有机x射线检测器
CN105723245B (zh) * 2013-11-22 2019-04-09 通用电气公司 具有隔层的有机x射线检测器

Also Published As

Publication number Publication date
EP1390972B1 (en) 2006-07-12
IL157506A (en) 2007-06-03
WO2002069381A3 (en) 2003-12-18
JP2004532514A (ja) 2004-10-21
DE60213086T2 (de) 2006-12-28
US6455443B1 (en) 2002-09-24
IL157506A0 (en) 2004-03-28
ATE333144T1 (de) 2006-08-15
EP1390972A2 (en) 2004-02-25
KR20030071841A (ko) 2003-09-06
CN1550036A (zh) 2004-11-24
WO2002069381A2 (en) 2002-09-06
US20020160600A1 (en) 2002-10-31
JP3759108B2 (ja) 2006-03-22
ES2262797T3 (es) 2006-12-01
IN2003DE01322A (enExample) 2005-05-27
DE60213086D1 (de) 2006-08-24
KR100516534B1 (ko) 2005-09-22
TW561551B (en) 2003-11-11

Similar Documents

Publication Publication Date Title
CN1251312C (zh) 用于后端线互连结构的具有增强粘合力及低缺陷密度的低介电常数层间介电膜的制造方法
CN1181532C (zh) 制造半导体器件的方法
CN1839468B (zh) 使用甲硅烷基化剂修复低k介电材料的损伤
US20050095840A1 (en) Repairing damage to low-k dielectric materials using silylating agents
CN1376740A (zh) 硅基组合物、低介电常数膜、半导体器件以及制造低介电常数膜的方法
JPH07135185A (ja) 金属バイア形成方法
CN101079409A (zh) 互连结构及其制造方法
CN1404136A (zh) 增加低介电层涂布能力的方法
CN1624895A (zh) 在互连结构中低电阻通道接触的形成
CN1742363A (zh) 受损电介质材料和电介质膜的修复和恢复
CN101395713B (zh) 用于增强铜的电迁移抵抗性的涂布方法
CN1612336A (zh) 半导体装置及其制造方法
US7928536B2 (en) Roughness reducing film at interface, materials for forming roughness reducing film at interface, wiring layer and semiconductor device using the same, and method for manufacturing semiconductor device
CN1662620A (zh) 在芯片制造过程中密封多孔材料的方法及该方法所使用的化合物
CN101647106B (zh) 表面疏水化膜、表面疏水化膜形成材料、布线层、半导体装置及其制造方法
CN1163950C (zh) 增加半导体的介电材质的粘附性质的方法
CN1728375A (zh) 半导体装置及其制造方法
TWI225262B (en) A process for spin-on coating with an organic material having a low dielectric constant
CN1832117A (zh) 半导体元件的处理方法以及半导体元件的形成方法
CN100539114C (zh) 界面粗糙度降低膜、其原料、由其制得的布线层和半导体器件、制造半导体器件的方法
US20040188675A1 (en) Semiconductor device and method of manufacturing the same
CN100397591C (zh) 低介电常数材料层的制造方法
JP2006351877A (ja) 積層体の製造方法、半導体デバイスおよび半導体デバイスの製造方法
JP2004304177A (ja) 半導体装置および半導体装置の製造方法
JPWO1995018190A1 (ja) 半導体装置の絶縁膜および絶縁膜形成用塗布液ならびに絶縁膜の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20171130

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171130

Address after: American New York

Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20060412

Termination date: 20210219