ATE333144T1 - Verfahren zur herstellung von dielektrischen zwischenschichten mit niedriger dielektrizitätskonstante für beol- verbindungsleitungen mit verbesserter haftung und niedriger fehlerdichte - Google Patents

Verfahren zur herstellung von dielektrischen zwischenschichten mit niedriger dielektrizitätskonstante für beol- verbindungsleitungen mit verbesserter haftung und niedriger fehlerdichte

Info

Publication number
ATE333144T1
ATE333144T1 AT02721047T AT02721047T ATE333144T1 AT E333144 T1 ATE333144 T1 AT E333144T1 AT 02721047 T AT02721047 T AT 02721047T AT 02721047 T AT02721047 T AT 02721047T AT E333144 T1 ATE333144 T1 AT E333144T1
Authority
AT
Austria
Prior art keywords
low
improved adhesion
beol
intermediate layers
defect density
Prior art date
Application number
AT02721047T
Other languages
German (de)
English (en)
Inventor
Andrew Robert Eckert
John C Hay
Jeffrey Curtis Hedrick
Kang-Wook Lee
Eric Gerhard Liniger
Eva Erika Simonyi
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE333144T1 publication Critical patent/ATE333144T1/de

Links

Classifications

    • H10P14/6342—
    • H10P14/6334—
    • H10P14/6682—
    • H10W20/074—
    • H10P14/6686—
    • H10P14/6922—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
AT02721047T 2001-02-21 2002-02-19 Verfahren zur herstellung von dielektrischen zwischenschichten mit niedriger dielektrizitätskonstante für beol- verbindungsleitungen mit verbesserter haftung und niedriger fehlerdichte ATE333144T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/789,422 US6455443B1 (en) 2001-02-21 2001-02-21 Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density

Publications (1)

Publication Number Publication Date
ATE333144T1 true ATE333144T1 (de) 2006-08-15

Family

ID=25147596

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02721047T ATE333144T1 (de) 2001-02-21 2002-02-19 Verfahren zur herstellung von dielektrischen zwischenschichten mit niedriger dielektrizitätskonstante für beol- verbindungsleitungen mit verbesserter haftung und niedriger fehlerdichte

Country Status (12)

Country Link
US (1) US6455443B1 (enExample)
EP (1) EP1390972B1 (enExample)
JP (1) JP3759108B2 (enExample)
KR (1) KR100516534B1 (enExample)
CN (1) CN1251312C (enExample)
AT (1) ATE333144T1 (enExample)
DE (1) DE60213086T2 (enExample)
ES (1) ES2262797T3 (enExample)
IL (1) IL157506A (enExample)
IN (1) IN2003DE01322A (enExample)
TW (1) TW561551B (enExample)
WO (1) WO2002069381A2 (enExample)

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Also Published As

Publication number Publication date
CN1550036A (zh) 2004-11-24
JP2004532514A (ja) 2004-10-21
IN2003DE01322A (enExample) 2005-05-27
CN1251312C (zh) 2006-04-12
JP3759108B2 (ja) 2006-03-22
EP1390972A2 (en) 2004-02-25
IL157506A0 (en) 2004-03-28
WO2002069381A3 (en) 2003-12-18
DE60213086T2 (de) 2006-12-28
TW561551B (en) 2003-11-11
ES2262797T3 (es) 2006-12-01
KR20030071841A (ko) 2003-09-06
IL157506A (en) 2007-06-03
US6455443B1 (en) 2002-09-24
EP1390972B1 (en) 2006-07-12
US20020160600A1 (en) 2002-10-31
KR100516534B1 (ko) 2005-09-22
DE60213086D1 (de) 2006-08-24
WO2002069381A2 (en) 2002-09-06

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