JP2021100120A - 半導体発光素子の製造方法 - Google Patents
半導体発光素子の製造方法 Download PDFInfo
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- JP2021100120A JP2021100120A JP2021015943A JP2021015943A JP2021100120A JP 2021100120 A JP2021100120 A JP 2021100120A JP 2021015943 A JP2021015943 A JP 2021015943A JP 2021015943 A JP2021015943 A JP 2021015943A JP 2021100120 A JP2021100120 A JP 2021100120A
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- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Abstract
Description
10、210、510 成長基板
112、2112、5112 n型半導体層
114、2114、5114 活性層
116、2116、5116 p型半導体層
110、2110、5110 半導体エピタキシャル積層
120a、120b、2120a、2120b、5120b p型電極
20、220、520、60 第1搭載基板
135、2135、5135 第1接着層
130a、130b、2130a、2130b、130b’、5120a n型電極
140、2140 金属酸化物透明導電層
150、2150 反射層
201、2201、501 第1エピタキシャルユニット
202、2202、502、501’ 第2エピタキシャルユニット
230、2230、5230 第2接着層
5280 透明金属酸化物導電層
30、530 第2搭載基板
200、300、400、500、600 半導体発光素子
2123 パターン化犠牲層
130a’、5120b’ p型延伸電極
130a’’ n型延伸電極
134 導電孔
132、232 絶縁層
202’ 第3エピタキシャルユニット
125 金属導電接続構造
120b’、1310 p型電極パッド
120b’’、1320 n型電極パッド
40 第1透明構造
410 絶縁散乱層
411、412 開口
530’ 第2搭載基板ユニット
501’ 十字形エピタキシャルユニット
260、560 ハンダ
50’、20’ サブキャリア
5000、2000 発光装置
A’、B’ 対称面
D 方向
Claims (10)
- 半導体発光素子の製造方法であって、
第1基板、複数個の第1半導体ユニット及び複数個の第2半導体ユニットを提供し、前記複数個の第1半導体ユニットが共同で前記第1基板上に第1領域を形成し、前記複数個の第2半導体ユニットが共同で前記第1基板上に第2領域を形成するステップと、
前記複数個の第2半導体ユニットを第2基板に転移させるステップと、
前記第1基板と前記複数個の第2半導体ユニットを分離させるステップとを含み、
前記第1領域と前記第2領域の面積及び幾何形状が何れも異なる、製造方法。 - 前記複数個の第1半導体ユニット及び前記複数個の第2半導体ユニットの数が異なる、請求項1に記載の製造方法。
- 前記複数個の第1半導体ユニット及び前記複数個の第2半導体ユニットの数が同じである、請求項2に記載の製造方法。
- 前記複数個の第1半導体ユニット及び前記複数個の第2半導体ユニットが第1接着層によって前記第1基板に固定される、請求項2に記載の製造方法。
- 前記第1接着層を照射するステップをさらに含む、請求項4に記載の製造方法。
- 前記複数個の第1半導体ユニットと前記複数個の第2半導体ユニットが互いに電気絶縁である、請求項1に記載の製造方法。
- 前記複数個の第2半導体ユニットがエピタキシャル構造である、請求項1に記載の製造方法。
- 前記複数個の第2半導体ユニットが第2接着層によって前記第2基板に固定される、請求項4に記載の製造方法。
- 前記第1接着層が前記複数個の第1半導体ユニットと前記複数個の第2半導体ユニットに対する接着力が異なる、請求項8に記載の製造方法。
- 前記第1接着層が前記複数個の第2半導体ユニットに対する接着力は、前記第2接着層が前記複数個の第2半導体ユニットに対する接着力より小さい、請求項8に記載の製造方法。
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