TWI335088B - Light-emitting diode and method for fabrication thereof - Google Patents

Description

</ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; A transparent substrate of a light-extracting surface emits a light-emitting diode. More specifically, the present invention relates to a light-emitting diode which is excellent in energy-releasing properties and exhibits high luminance and a method for producing the same. [Prior Art] With the object of giving high brightness to the light-emitting diode, a method of increasing the light-emitting efficiency depending on the shape of the device has been used up to now. In a device structure having electrodes each formed on the first side and the back surface of the semiconductor light-emitting diode, for example, a method of imparting high brightness by a side profile has been proposed (for example, in contrast to JP-B SHO) 63-28508, U.S. Patent No. 6,229,160 and JP-A HEI 3-227078). φ A light-emitting diode (LED) capable of emitting red, orange, yellow or yellow-green visible light, which has been known so far as aluminum phosphide-gallium-indium ((AlxGai-X)YIn丨·ΥΡ; where 0SXS1 and 0 &lt; ^1) A compound semiconductor LED provided by the resulting light-emitting layer. In such an LED, the light-emitting portion provided by the light-emitting layer made of (AlxGai.x)YIni-YP (where 0SXS1 and 0_YS1) is generally opaque to the light emitted from the light-emitting layer and mechanically formed at A substrate without strength, such as gallium arsenide (GaAs). Recently, in order to obtain the visible light LED capable of displaying the highest possible brightness and to further enhance the mechanical strength of the device, the removal of the opaque substrate, such as Ga As, by -5-Λ (2) 1335088, A technique of forming a junction type LED of a back sheet which is made of a transparent material which is transmissive and has a mechanical strength superior to that of the prior art by an innovative means has been disclosed (for example, Japanese Patent No. 3230638, JP-A) HEI 6-302857, JP-A 2002-246640, Japanese Patent No. 2588849 and ^ JP-A SHO 58-34985). Then, for the purpose of obtaining a high-intensity visible light LED, a method of improving the luminous efficiency by the shape of the device has been adopted. As an example, in a device structure having electrodes each formed on a first side and a back side of a semiconductor light-emitting diode, a technique of relying on a side structure to enhance high brightness has been disclosed (for example, in comparison with the above-mentioned US patent case) No. 6,229,1 60 and JP-A SHO 5 8 -3 498 5 ). Conventional techniques have proposed several device configurations that have electrodes each formed on the first side and the back side of the semiconductor light-emitting diode, but have not investigated the discharge properties exhibited by the device when used with a large amount of current. . In particular, the light-emitting diode of the light-emitting diode containing the AlGalnP- and gallium nitride-based light-emitting layers which provide the two electrodes on the light-emitting surface of the light-emitting surface is inferior in structure to the device on which the electrode is disposed on the back surface because it is not disposed on the back surface. The upper electrode. It is known that insufficient release properties will result in an increase in the temperature of the luminescent layer, a decrease in luminescent efficiency and a decrease in brightness. The device structure using the transparent substrate AlGalnP light-emitting layer and forming the two electrodes on the light-emitting surface will be accompanied by a complicated shape, and the electrode arrangement cannot be optimized, and the side conditions and the back surface of the light-emitting layer and the device cannot obtain high brightness and sufficient energy dissipation (exoergic property) )The problem.

-6- &lt; S (3) (3)

1335088 Although junction LEDs already provide high-brightness LEDs, there is a need for LEDs that display higher brightness. The problems of the present invention have been raised. In the case of illuminating light having two electrodes on the light-emitting surface, it is an object of the present invention to provide a light-emitting diode which is superior in energy absorbing property and which exhibits high incidence and high luminance. Even from the conventional technology, it is clear that the side of the light-emitting diode is related to the light output of the diode. In the structure having the light-emitting surface on the upper side, when the inclination angle is increased for the purpose of the significant side shape effect, the inclination causes the back surface area to be small, and the energy dissipation property and the large-scale current property of the bottom are lowered. In order to make the light-emitting layer smaller and larger in order to improve the energy dissipation, the cost problem incurred in the case of the expensive light-emitting layer will be lost. When the luminescent layer is close to the back side, having two structures on one surface will not be assembled by a conventional wire bonding process. The inventor found that the structure and area of the back surface, the illuminating product, the shape of the side surface, and the roughening of the back surface must be made significant due to the results of the investigation of the shape and the back surface of the light-emitting diode. In order to accomplish the above object, the present invention is completed in accordance with the present invention. The first aspect of the present invention is a light-emitting diode having a substrate and a compound semiconductor. a light-emitting layer formed, wherein an optical product (A) of an upper electrode and a second electrode having a polarity different from the first electrode, and an area (B) of the light-emitting layer formed adjacent to the light-emitting surface are still present in view of the upper diode The light-efficiency profile and the surface of the knot-up of the large-thickness of the bright back surface of the raised angle of the Dart's angle are reviewed and invented. The relationship between the area (C) of the back surface of the light-emitting diode on the opposite side of the first electrode and the side on which the second electrode is formed on the surface which is transparent to the first surface and the surface of the light-emitting diode which is on the opposite side of the first electrode and the second electrode formation side satisfies the relationship of the formula (1).

A&gt;C&gt;B A second aspect of the invention includes the outline of the first aspect, wherein the luminescent layer has a composition of the formula (AlxGa^jOYlm.YP; wherein Osxsi, 〇&lt;Υ&lt;1' and the transparent substrate Having a heat transfer coefficient of 100 W/m'k or greater. A third aspect of the invention includes the outer profile of the first or second aspect, wherein the transparent substrate has a first side adjacent to the luminescent layer and is adjacent to the transparent a second side of the back side of the substrate, and wherein the first side has an angle of inclination that is less than an angle of inclination of the second side. A fourth aspect of the invention includes the outline of the third aspect, wherein the first side is vertical And the second aspect is skewed. A fifth aspect of the invention is a light emitting diode comprising a compound semiconductor layer equipped with a light emitting portion, the light emitting portion comprising a light having a composition of the formula (AlxGai.x) YIni-YP a layer; wherein OsXsi and 0 &lt;Y&lt;1, a transparent substrate having a compound semiconductor layer attached thereto, and a main light-emitting layer on which a first electrode and a second electrode having a polarity different from the first electrode are formed, wherein the Two electrode Forming on a compound semiconductor layer exposed on the opposite side of the first electrode and having a side surface including a first side substantially perpendicular to a light emitting layer emitting surface on an adjacent side of the light emitting layer and toward the light emitting The second side of the layer -8 - (· £ (5) (5) 1335088 is inclined away from the light-emitting surface on the side. The sixth aspect of the invention is a light-emitting diode comprising a compound semiconductor layer equipped with a light-emitting portion, The light-emitting portion contains a light-emitting layer having a composition of the formula (AlxGauhlm-YP; wherein 0SXS1 and 00&1; YS1, a transparent substrate having a compound semiconductor layer attached thereto, and a first electrode formed thereon and a polarity different from that of the first electrode a main light-emitting layer of the second electrode, wherein the second electrode is formed at a corner position on the compound semiconductor layer exposed on the opposite side of the first electrode and the transparent substrate has a side surface that includes substantially perpendicular to the light emission a first side surface of the light emitting layer light emitting surface on the adjacent side of the layer and a second side surface inclined to the light emitting surface on the far side of the light emitting layer. The seventh aspect of the present invention A profile of the third or fourth aspect, wherein the angle of inclination of the second side is 1 or more and 3 degrees or less. The eighth aspect of the invention includes the third or fourth aspect a profile in which the angle of inclination of the second side is 1 or more and 2 degrees or less. The ninth aspect of the invention includes the profile of the fifth or sixth aspect, wherein the second side is parallel An angle of between 55 and 80 degrees is formed between the surfaces of the light emitting surface. A tenth aspect of the invention includes the outer contour of the third or fourth aspect, wherein the first side has 50 μm or more and ΙΟΟμπι or more The length is small and the first side has a length of ΙΟΟμπι or more and 250 μm or less. An eleventh aspect of the invention includes the outer aspect of the fifth or sixth aspect, wherein the first side has a length of from 30 μm to ΙΟΟμπι. A twelfth aspect of the invention includes the -9-(6)(6) 1335088 profile of the first, fifth or sixth aspect, wherein the transparent substrate is made of gallium phosphide (GaP). A thirteenth aspect of the invention includes the outer aspect of the fifth or sixth aspect, wherein the transparent substrate is substantially an ?-type GaP single crystal and has a surface orientation of (100) or (111). A fourteenth aspect of the invention includes the above aspect of the fifth or sixth aspect, wherein the transparent substrate has a thickness of from 50 μm to 300 μm. A fifteenth aspect of the invention includes the outer aspect of the fifth or sixth aspect, wherein the transparent substrate is made of tantalum carbide (SiC). A sixteenth aspect of the invention includes the outer aspect of the first aspect, wherein the transparent substrate has a back surface of a rough surface that can astigmatize. A seventeenth aspect of the invention includes the outer aspect of the first aspect, wherein the transparent substrate has a back surface on which a metal film is formed. The eighteenth aspect of the invention includes the outline of the seventeenth aspect, wherein the metal film on the back surface of the transparent substrate contains a metal having a melting point of 400 T: or lower. A nineteenth aspect of the invention includes the outline of the seventeenth aspect, wherein the metal film is made of an AuSn alloy. A twentieth aspect of the invention includes the outline of the first aspect, wherein the light-emitting diode system is used with a power of 1.5 W or more and has a back surface area of 0.6 mm 2 or more. A twenty-first aspect of the invention includes the outline of the sixteenth aspect, wherein the transparent substrate is a GaP substrate, and the back surface thereof is obtained by treating the GaP substrate with hydrochloric acid. A twenty-second aspect of the invention includes the outline of the third aspect, wherein -10 (7) 1335088 the first and second sides of the transparent substrate are formed by a cutting method. A twenty-third aspect of the invention includes the fifth aspect, wherein the first electrode surrounds the semiconductor layer. A twenty-fourth aspect of the invention includes the sixth aspect, wherein the second electrode is on the inclined structure of the second side: The twenty-fifth aspect of the invention includes the fifth aspect, the first electrode has a lattice shape. A twenty-sixth aspect of the invention includes the fifth or fifth aspect, wherein the first electrode comprises an attenuating electrode (the pad el has a linear electrode having a width of 10 μm or less. The twenty-seventh aspect of the invention includes the fifth Or a profile, wherein the light-emitting portion comprises a GaP layer and the second electrical GaP layer. The twenty-eighth aspect of the invention includes a fifth or a fifth aspect, wherein the first electrode has an n-type polarity and the second polarity A twenty-ninth aspect of the invention includes the fifth or fifth aspect, wherein the inclined second side of the transparent substrate has a thick shape. The thirtieth aspect of the invention is that the light-emitting diode comprises the steps of: forming a (AlxGai_x) a light-emitting portion of the light-emitting layer of YIn; wherein the compound semiconductor layer of the light-emitting portion is connected to the first light-emitting surface of the transparent light-emitting substrate on the opposite side of the transparent substrate The cutting method (the outer contour of the dicing, the outer contour, the outer contour of the square, the outer ectrode of which six aspects) and the outer pole of the six aspects are formed on the outer electrode of the six aspects with p-type Six aspects of outreach. In the method of forming a body, the composition of the ι-γΡ is subsequently contained so that a second electrode attached to the pole and the polarity different from the first electrode of the -11 - (8) (8) 1335088 is formed in the compound semiconductor The exposed portion of the layer is such that the second electrode can be disposed on the opposite side of the first electrode, and the side of the transparent substrate is formed by a cutting process to form a first surface substantially perpendicular to the light emitting layer emitting surface on the adjacent side of the light emitting layer a side surface and a second side inclined to the light emitting surface on the side away from the light emitting layer. A thirtieth aspect of the invention resides in a method of producing a light-emitting diode comprising the steps of: forming a light-emitting portion comprising a light-emitting layer having a composition of the formula (AlxGai_x) YIni_YP: wherein 0SXS1 and 0 &lt; Υ &lt;1, The compound semiconductor layer containing the light-emitting portion is attached to the transparent substrate, the first electrode having the main light-emitting surface attached to the opposite side of the transparent substrate, and the second electrode having a polarity different from the first electrode are formed a corner position on the exposed portion of the compound semiconductor layer such that the second electrode is disposed on an opposite side of the first electrode, and a side surface of the transparent substrate is formed by a dicing method to form a light emitting layer substantially perpendicular to an adjacent side of the light emitting layer a first side of the surface and a second side that is inclined toward the light emitting surface on the side away from the light emitting layer. A thirty-second aspect of the invention includes the outer aspect of the thirtieth or thirty-first aspect, wherein the first side is formed by a scribe and break method. The thirtieth aspect of the invention includes the outer aspect of the thirtieth or thirty-first aspect, wherein the first side is formed by a cutting method. According to the above invention, since the transparent substrate light-emitting diode having the light-emitting layer made of the compound semiconductor has an optimized light-emitting layer area relationship with the back surface area of the transparent substrate and the side surface condition of the transparent substrate, it can be provided up to now. High brightness never achieved, showing high discharge performance and suitable for a large number of -12-(9) (9) 1335088 current LEDs. Further, according to the present invention, the transparent substrate light-emitting diode having the light-emitting layer of the compound semiconductor becomes optimized electrode deposition and wafer shape. According to the present invention, it has been possible to provide a light-emitting diode which has a light-emitting efficiency of a light-emitting portion which has been enhanced to the extent that it has not been hitherto, and which exhibits high luminance, suppresses operating voltage, and has high reliability. Various objects, features, and advantages of the invention will be apparent from the description of the appended claims. [Embodiment] The light-emitting diode of the present invention has a light-emitting layer made of a compound semiconductor. Although a conventional light-emitting layer, such as a GaAlAs-based, InGaN-based, and AlInGaP-based light-emitting layer, can be used as the above-mentioned light-emitting layer, in particular, an InGaN-based and AlInGaP-based light-emitting layer having a thin epitaxial layer. It is easy to manufacture. These light-emitting portions are effective for wavelengths in which the ultraviolet light extends to a wide range of the infrared wave band. The light-emitting diode of the present invention preferably has a light-emitting portion obtained by stacking a coating layer, a contact layer or the like in addition to the light-emitting layer. The light-emitting portion contemplated by the present invention is preferably composed of a compound semiconductor stacked structure containing a light-emitting layer made of (AlxGai-X)YIni.Yp (0SXS1, 〇&lt;Υ&lt;1). In this case, the light-emitting layer may be formed of any of a conductive type, an η-type, and a ρ-type (AlxGa χΚΙΐΜ-γΡ (0SXS1, 〇 &lt; YSl). Although the luminescent layer may be of any structure, Single quantum well (SQW) structure and multi-quantum well (MQW) structure, preferably having a function for obtaining superior to monochromatic products

-13- (10) (10)

1335088 The MQW structure of the light source. The (AlxGai_x)YIni-Yp 0&lt;Y&lt;1&gt;1 composition of the well layer forming the barrier layer and the (QW) structure is determined to form a quantum order of the intent of the illuminating wavelength in the well layer. In order to ensure high-intensity illumination, it is most advantageous for the light-emitting portion to be "entrained" in order to provide a radiation recombination, and the light-emitting portion preferably has a light-emitting layer and a coating comprising opposite sides of the opposite side of the pair. a so-called double heterogeneity of the layer (the cladding layer is preferably made of a higher width than the light-emitting layer formed by (AlxGa1.x) YIn1.YP (0&lt;X&lt;1&gt;0&lt;Y&lt;1) The refractive index of the semiconductor material is formed (AlQ4Ga〇.6) Q.5In〇.5P and can emit a light-emitting layer having about 570 yellow-green color, for example, the package (Al〇.7Ga〇.3)〇.5Inc ) .5P formation (Y· Hosokawa isometric, 22 1 (2000), 652-656). In the case of a cow adapted to moderately change the discontinuity between the two layers, the intermediate layer is preferably formed of a semiconductor material having a band gap between the barrier layer and the cladding layer. A method of forming a constituent layer of the light-emitting portion, a chemical vapor deposition (MOCVD) method, a molecular beam epitaxy, and a liquid crystal crystal (LPE) method. The light-emitting diode of the present invention is a so-called transparent substrate which provides a transparent substrate on the opposite side of the light-emitting surface. Therefore, a transparent substrate is applied to the light-emitting portion equipped with the light-emitting layer. The transparent quantum well (0&lt;Χ&lt;1, : is to form the desired i to the target [in the luminescent layer DH] structure in the carrier and the t-light layer. The ί ban can bring. Regarding the layer of the nanometer wavelength, the crystal is used to produce a layer of the coating layer. Herein: in the illuminating "reference metal" method: photodiode, the invention must demonstrate that the substrate is composed of -14-(11) (11) 1335088 having sufficient strength to mechanically support the illuminating portion, giving a large The width is given to a forbidden band of the emitted light that transmits the illuminating portion, and a material exhibiting transparency to the light wave is formed. For example, it may be a group III-V compound semiconductor crystal such as gallium phosphide (GaP), arsenic. Aluminum-gallium (AlGaAs) or gallium nitride (GaN), II-VI compound semiconductor crystals, such as zinc sulfide (ZnS) or zinc selenide (ZnSe), Group IV semiconductor crystals, such as hexagonal or cubic niobium carbide (SiC) In particular, it is preferable to use GaP and SiC among the various materials described above. GaP is produced in a single crystal form and is superior to workability. The heat transfer coefficient of GaP is 1 l〇. W/rn'k. Although GaP can be used as a principal plane for any general surface orientation, such as (111) plane and (100) plane, for the purpose of processing, it is preferred to be easily roughened (1 1 1 ) as the main plane. SiC, although weak The difficulty in processing is mass-produced in a single crystal form and shows a heat transfer coefficient of 1 67 W/m'k and, therefore, it is confirmed that it is the most suitable material in terms of heat radiation. The transparent substrate preferably has nearly 50 Micron or greater in thickness to support the illuminating portion with sufficient strength. It is further preferred to maintain the thickness above about 300 microns so that the subsequently bonded transparent substrate can be easily machined. In equipment (AlxGai-xhlnuP (0SXS1) , 0 &lt; YS1) The compound semiconductor LED of the light-emitting layer produced is most suitable for forming an η-type GaP single crystal transparent substrate having a thickness of 50 μm or more and about 300 μm or less. In the case where a transparent substrate made of (GaP) is bonded to the uppermost surface layer of the light-emitting portion, for example, a lattice factor is selected with the -15-(12) (12)

1335088 Light-emitting portion of the other III-V compound semiconductor composition layer compound semiconductor material to form the light-emitting portion at the highest position eliminates the function of the transparent substrate to be bonded to the light-emitting portion. The use of this material will result in the prevention of the luminescent layer being damaged by, for example, a period during which the compound that emits light of the desired wavelength is semi-stable. To achieve the purpose of sufficiently eliminating the stress applied to the illuminating portion at that time, the surface layer preferably has a thickness of 0.5 μm or more. The layer gives an improper thickness, and since the lattice coefficient is different from the luminescent layering, excessively exerting the ground-free stress on the uppermost surface layer on the luminescent layer. To avoid this unfortunate, the topmost layer of meters or less is suitable. In particular, when phosphide (GaP) is selected by (AlxGai.x) Ylni.yP (0SXS1, the light emitted from the luminescent layer emitted to the outside is selected as a square material, it is included as a group (Ga). A semiconducting device with phosphorus (P) and containing more Ga than P will form a strong bond when the uppermost surface layer of the light-emitting portion is formed. GaxP^x (〇·5&lt;X &lt;0.7), non-stoichiometric layer. The surface of the transparent substrate to be joined and the surface of the light emitting portion are surfaces formed of single crystals and the surfaces preferably have an orientation. The surface preferably has a (100) plane or (ie) a surface having (100) For the purpose of illuminating the surface or the (111) plane, the use of the III-V: surface layer with the base of the (100) or (111) plane will combine the stresses of the upper and lower layers. The upper surface of the bright substrate is bonded to the uppermost portion: the uppermost surface portion is inevitably provided with 20 micro 0&lt;1&lt;1) transparent base-forming elemental gallium: material to be specially formed, and the uppermost topmost table is identical Surface: 1 1) face. For some of the topmost layers will make it a table -16- (13) (13)

The 1335088 face is sufficient to form the uppermost layer of the light-emitting portion on the substrate. When a gallium arsenide (GaAs) single crystal having a (100) plane as a surface is used as a substrate, an uppermost layer of light having a (100) plane as a surface thereof can be formed. When the transparent substrate or the light-emitting portion to which the substrate is bonded is at the uppermost level, a particularly strong bonding is achieved by a root mean square 値 (rms) of 0.3 nm or more. The surface of this flatness can be obtained, for example, by a chemical mechanical honing (CMP) method using a fine powder containing cerium carbide (SiC) or a fine cerium (Ce) honing agent. When the chemically ground surface is further treated with an acid solution or an alkali solution, it will further improve the surface flatness and contribute to the removal of foreign matter and contaminants on the sticky surface during honing to obtain a clean surface. The transparent substrate or the uppermost layer of the light-emitting portion is joined at a vacuum of 1 x 1 CT 2 or more preferably 1 x 10 3 Pa or less. In particular, by interfacing the honed plane as described above, when a strong bond can be formed to bond the two surfaces to each other, the surface to be joined must be irradiated by an atomic beam or ion beam having electron volts or higher energy. And the wording "activation" means that the surface which is cleaned by removing the impurity layer and the contaminated layer on the surface containing the oxide film and carbon and is present on the transparent substrate or the light-emitting portion constituent layer. When either table is executed, the two surfaces will be joined in a strong and foolproof manner. When this is performed on the two surfaces, they will be able to engage with greater strength. For the irradiated species that prove to be effective in bringing strong joints, the (H) atom, the hydrogen molecule (H2) or the hydrogen ion (proton: H+) bundle may be cited as an example of the surface of the table. The smaller is by phase. In ί 50. Engaged. The surface is illuminated with hydrogen. By using -17-(14) (14) 1335088, by using an irradiation beam containing elements present in the surface region to be joined, a bond superior to strength can be obtained when gallium phosphide with zinc (Zn) is added ( GaP) When used for a transparent substrate, for example, the bonding is strongly formed by irradiating an atom or an ion beam which may contain gallium (Ga), phosphorus (P) or zinc (Zn) to a surface to be bonded. When the surface of the transparent substrate or the uppermost layer of the light-emitting portion has a high electrical resistance, illuminating the surface with a bundle of ions mainly contained will cause the surface to be charged. Since the joint will not be strongly formed when the surface is charged to cause electrical repulsion, it is preferred to activate the surface by utilizing the ion beam control to activate the surface superior to the conductivity. In the surface region of the transparent substrate or the light-emitting portion constituent layer, a blunt gas beam which does not cause a significant change in its composition, such as helium (He), neon (Ne), argon (Α〇 or 氪 (K〇, will be used) This leads to the stabilization of the activation of the surface. In particular, the use of an argon (Ar) atom (monoatomic molecule) beam proves to be beneficial for the surface to be activated quickly and conveniently. Helium (He) has a smaller atomic weight than argon (Ar), thus The bundle has the disadvantage of wasting time entraining during activation of the surface to be joined. Meanwhile, the use of a krypton (Kr) beam having an atomic mass greater than argon has damage that may cause the surface to be impacted. When the state overlaps the surface of the transparent substrate and the uppermost surface of the light-emitting portion, efforts to make mechanical pressure throughout the joint surface prove to be advantageous for strong bonding. Specifically, in the orthogonal (vertical) direction Applying a pressure in the range of 5 g/cm 2 to 100 g/cm 2 on the joint surface. This method can be used even if either or both of the transparent substrate and the uppermost layer of the light-emitting portion are warped The work eliminates warpage and causes bonding with uniform strength. -18- (15) (15) Ι 335Ό88 When the transparent substrate and any one or both surfaces of the uppermost layer of the light-emitting portion are kept below 1 ° C and preferably The transparent substrate and the light-emitting portion are bonded in a vacuum of less than 50 ° C and more preferably at room temperature in the above-mentioned preferred degree of vacuum. If they are joined in a high temperature environment exceeding about 500 ° C, An excessively high temperature will have a change in the characteristics of the luminescent layer formed by (AlxGa丨·χ)γΙη··(0SXS1, 〇&lt;Υ&lt;1) and which is incorporated into the luminescent portion and thus will disintegrate to emit light of a desired wavelength. Disadvantages of stable manufacture of a compound semiconductor LED. The present invention bonds a transparent substrate to an uppermost layer of a light-emitting portion to adjust the light-emitting portion to a mechanically supportable state, and subsequently removes a substrate for forming the light-emitting portion In order to improve the efficiency of emitting the emitted light to the outside, a high-brightness compound semiconductor LED structure is completed, particularly when the (AlxGa丨-X)YIn丨-YP (0&lt;X&lt;1,0&lt;YS1) light-emitting layer is inevitably absorbed. Light opaque material When used as a substrate, the method of removing the substrate in the above manner can promote stable fabrication of high-brightness LEDs. When a layer made of a material that absorbs light emitted from the luminescent layer, for example, a buffer layer, is inserted into the substrate. When the material is between the light-emitting portion, removal of the intervening layer of the bonded substrate proves to be advantageous for imparting high brightness to the LED. The substrate can be mechanically cut, honed or physically dry or chemically wet etched or by combining these It is removed by operation, especially by selective etching using etching differences between materials of different qualities, which can achieve selective removal of the substrate individually and with appropriate reproducibility and uniformity. The substrate is removed. The invention features a first electrode (n-type, for example) and a second electrode (p-type, for example) formed on the primary exit surface of the light-emitting diode. As used herein, the phrase "primary illuminating surface" means a surface that is seated on a surface of a light portion of the hair -19-(16) (16) 1335088 that is attached to the transparent substrate. The reason why the electrode of the present invention is constructed in this way is to impart high brightness. By adopting this structure, the need to feed current into the transparent substrate in the installation can be avoided. Therefore, the high brightness imparting is accomplished by the ability to mount a substrate having a high transmittance. The light-emitting diode according to the first specific example of the present invention and its preparation method will be described in detail below with reference to Figs. 1 to 5. Regarding the electrode, as shown in Fig. 2, a first electrode and a second electrode having a polarity different from that are formed on the light-emitting surface. These electrodes have a structure capable of receiving wiring work. The second electrode is formed by etching a portion of the stacked body from the surface to below the light-emitting layer and contacting the semiconductor layer or the conductive transparent substrate. This transparent substrate is bonded to the semiconductor layer 135 indicated by Fig. 14 of Fig. 4. The light-emitting diode according to the first specific example is characterized by the area (A) of the light-emitting surface, the area (B) of the light-emitting layer, and the back surface of the light-emitting diode (the surface on the opposite side to the side on which the transparent substrate electrode is formed) The area (C) has a specified relationship. The light-emitting diode generally has a periphery around the light-emitting region covering the transparent resin. However, since a transparent resin such as an epoxy resin has poor thermal conductivity, it is impossible to predict that the light-emitting region of the light-emitting diode can receive heat radiation. Most of the heat generated in the light-emitting diode is radiated via a package substrate adjacent to the back side of the light-emitting diode. The area of the back surface (C) is used as the energy dissipating surface, and the area (B) of the luminescent layer constitutes the heat generating surface and the area (A) of the upper surface of the device as the illuminating surface will have brightness and heat radiation.

-20- (17) (17) 1335088 The most appropriate relationship. Although the relationship of C &gt; A &gt; B has been confirmed to be advantageous when considering the energy dissipating surface alone, high brightness imparting cannot be achieved when both the light-emitting surface and the light-emitting layer have a small area. Furthermore, the increased area of the expensive epitaxial layer that is removed will increase the cost. In order to obtain high luminance, the area (B) of the light-emitting layer and the area (A) of the light-emitting surface are maximized, and the side surface of the transparent substrate is formed as a sloped surface. The luminescent layer is located adjacent to the luminescent surface. The heat generated by the luminescent layer is released into the maximum area (Α) of the illuminating surface by diffusion to discharge the heat of the luminescent layer, smoothly conducts along the inside of the illuminating diode structure, and finally radiates to the surface as the emitting surface. back. Since it is necessary to promote the imparting of high brightness and enhance the heat radiation by tilting the side surface of the transparent substrate, it is advantageous to avoid setting the inclined surface to a transparent base close to the light emitting layer for the purpose of enlarging the light exit area (Α). Side of the material. The semiconductor close to the luminescent layer preferably has as large a volume as possible for the purpose of allowing thermal energy to diffuse easily. Thereby, the inclined surface is formed on the side of the transparent substrate near the back surface of the light-emitting layer. Since the inclined surface near the back surface touches the material having excellent energy dissipation property, even if the area (C) of the back surface of the light-emitting diode is slightly smaller than the area (α) of the light-emitting surface, the heat can be sufficiently dissipated and the heat is not determined by the rate. The degree of radiation. Conditions that are conducive to maintaining an area balance are shown below.

0.95xA&gt;C&gt;0.6xA

0.9xA&gt;B&gt;0.7xA

C&lt;B&gt;0.8xC .·. A &gt; C &gt; B -21 - (18) (18) 1335088 Luminous diodes operating at 〇·5 watts or more must have high energy dissipation and 1.5 A tile or larger large power operated light-emitting diode must have a higher level of energy dissipation. In the light-emitting diode used in such a large electric power as the above, the back surface preferably has an area of 0.6 mm 2 or more. As the size of the diode increases, the discharge effect exhibited by the LED will increase significantly. When the transparent substrate is formed of GaP, it is preferred to have a back surface treated with hydrochloric acid. In particular, this treatment proves to be advantageous by the method of surface orientation (111) plane. The feature of the light-emitting diode according to the first specific example is also the side profile. That is, in the ordinary case, it is characterized in that at least one side of the transparent substrate is inclined. The transparent substrate preferably has the first side 21 as illustrated in FIGS. 2 and 5. And the second side 22 . Then, the inclination angle of the first side surface 2 1 is smaller than the inclination angle of the second side surface 22. In this case, the first side 21 preferably has no (zero) tilt angle, i.e., the transparent substrate. The inclination angle of the second side surface 22 is represented by the inclination angle 20 with respect to the vertical line of the transparent substrate in Figs. 2 and 5. The inclination angle of the second side 22 is preferably in the range of 10 degrees or more and 30 degrees or less and more preferably in the range of 10 degrees or more and 20 degrees or less. The second side 22 may be an inclined surface having a fixed inclination angle, an inclined surface formed by a polygon having a plurality of inclination angles, or an inclined curved surface. When the second side 22 is formed of a plurality of polygonal angles, the angle of the second side 22 is represented by the arithmetic mean 所有 of all the inclination angles. In the case of a curved surface, the angle of the second side 22 is represented by a straight line angle -22-(19) 1335088 that joins the start and end points of the curved surface. The side angle of the transparent substrate takes into consideration the brightness and the extensibility. The first specific example of the formation of the transparent substrate is as described above. The photodiode is particularly superior to the properties exhibited by the high current region. Although the side angle of the through-material is advantageous in terms of light, the above range is most advantageous because the area of the back surface of the light-emitting diode is considered to increase the angle, which tends to increase the thermal impedance. The idea of enhancing the light extraction efficiency from the side of the oblique light-emitting diode is known in the disclosure of the previous document. In the light-emitting diode of the first specific example, the transparent base is formed as described above. The first side surface 2 1 and the second side surface 22 are arranged such that the first side surface 2 1 needs a smaller inclination angle than the second side surface 22 to enlarge the effect of the vicinity of the light-emitting layer and promote heat radiation and the first surface 22 Increasing the brightness. Regarding the length of the side, the length (L) of the first side 21 is more than 50 microns or more and 100 microns or less, and (M) of the second side 22 is preferably 100 microns or more and 250. Micron or less, and the ratio is preferably from 1 to 5. The first side 21 and the second side of the light-emitting diode transparent substrate may be formed by a dicing method. Alternatively, the transparent side may be By using, for example, wet etching The method of dry etching, scribing, and processing is formed. However, the cutting method superior to the shape control productivity proves to be most suitable. The back surface 23 of the transparent substrate of the light emitting diode can be formed in the energy dispersion: The corner of the invention base C), the material to be described is taken into a rough surface of the length of the M/L 5 22 substrate laser and the raw light -23-(20) (20) 1335088. The back side 23 of the light-emitting diode is attached to the surface of the assembled package. The connecting face is typically bonded to the package by using a silver paste having a high reflective force or is fixed to a highly reflective metal such as silver or aluminum by a transparent adhesive which can be seen to have an increased brightness of the light-emitting diode. The back side 23 formed by the rough surface that can scatter light will contribute to enhanced brightness because the side is less likely to emit light or can be scattered above the angle of reflection from which light can be emitted. Moreover, since the back side 23 formed by the rough surface capable of scattering light must be added to the surface area, it will also exhibit an energy dissipating surface effect which is said to promote heat dissipation toward the package side. In addition to the above structure, the transparent substrate back surface 23 of the light-emitting diode enables the metal film to be formed on the other. The metal film can impart a function of reflecting light and a function of increasing the thermal conductivity to the side of the light-emitting diode and widening the selection range of the package material. The metal film preferably contains a metal having a melting point of not more than 400 °C. The method of attaching the light-emitting diode transparent substrate to the package can employ soldering or a technique using conjugate bonding. This method is most suitable in terms of energy dissipation because the light-emitting diode and the package can be connected via metal using this method. Next, by attaching a metal to connect to the back surface 23 of the light-emitting diode, assembly of the light-emitting diode lamp can be facilitated. Considerations are generally made for the material of the package, and conditions that cause the connection to occur at temperatures not exceeding 400 °C prove to be advantageous. It has proven to be advantageous to use the AuSn alloy for the metal film '. The AuSn alloy was used in the form of a ruthenium metal because the AuSn alloy having a tin content of 20% by weight at the co-defect point had about 283. The melting point of (: is confirmed to be the most suitable material to be connected at a low temperature. -24- (21) 1335088 In addition to the above methods, any conventional technique for manufacturing a light-emitting diode for use in the manufacture of a light-emitting diode A light-emitting diode can be manufactured by a step method such as ohmic electrode formation, separation, inspection and evaluation, etc. Further, an illumination device such as a lamp can be manufactured by emitting light into the package. The specific substrate of the two embodiments of the light-emitting diode has a light-emitting surface of the nearly vertical light-emitting layer close to the first side of the light-emitting layer and a second side that is inclined away from the light-emitting layer side with respect to the light-emitting surface. Preferably, the light-emitting diode has such a structure that the light can be efficiently radiated from the light-emitting layer toward the transparent substrate side, and the light portion radiated from the light-emitting layer toward the transparent substrate side is reflected sideways and from the first The two sides are released. The first side and the second side effect will increase the probability of light emission. The second embodiment of the light emitting diode preferably limits the angle a formed by the surface of the second side light emitting surface to 55 degrees to 80 (cf. Fig. 11). When the angle falls within this range, the light reflected from the bottom of the transparent substrate is effectively released to the outside. The second embodiment of the light-emitting diode preferably has a falling to 1 The first side length D (thickness direction) of the 〇〇 micron range is limited to this range, which can increase the luminescent luminous efficiency of the present invention because the light reflected from the bottom of the transparent substrate will effectively illuminate the side surface portion and pass through the main The illuminating surface radiation. In the structure of the present invention, the first side is preferably a method for taking a part of the transparent portion of the dipole to be a part of the transparent side to the outside of the structure. The coplanar and parallelism of the side reaches the range of 3 μm. The shape of the first diode returned to the first lattice is -25- &lt; S' (22) (22) Ι 335 Ό 88. By providing this The first side of the lattice shape can improve the reliability of the light-emitting diode of the present invention because the shape can uniformly inject a current into the light-emitting layer. Next, the light-emitting diode of the second specific example enables the first electrode to Attenuated electrode Pad electrode) and a linear electrode having a width of not more than 1 μm. Since the structure is oriented to reduce the width of the electrode, a light-emitting diode of the present invention can be given high brightness, since the opening area of the light-emitting surface can be increased. Furthermore, by forming the shape of the first electrode into a crystal lattice, the reliability of the light-emitting diode of the present invention can be improved because the crystal lattice can uniformly inject a current into the light-emitting layer. The second specific example of the light-emitting diode Preferably, the electrode body is surrounded by a semiconductor layer around the second electrode, and the operating voltage is reduced in a direction in which the first electrode surrounds the four sides of the second electrode, because the current can easily flow to the four sides. The light emitting diode has the light emitting portion having a structure in which the GaP layer is broken and the second electrode is formed on the GaP layer. With this structure, the effect of lowering the operating voltage is achieved. By forming the second electrode on the GaP layer, fabrication of the desired ohmic contact and lower operating voltage is made possible. The second embodiment of the light-emitting diode preferably has a first electrode having a polarity and a second electrode having a Ρ-type polarity. Adopting this structure will result in enhanced brightness. Forming the first electrode with a Ρ-type polarity will cause current diffusion to deteriorate and reduce brightness. Nonetheless, the formation of the η-type polarity of the first electrode will result in a diffusion enhancement of the current -26-(23) 1335088 and achieve a high brightness imparted to the light-emitting diode. The light-emitting diode of the second specific example is preferably such that the inclined surface of the transparent substrate is formed into a rough surface. Applying the rough surface of the inclined surface will result in suppression of the total reflection force of the inclined surface. The rough surface can be obtained, for example, by chemical etching with phosphoric acid + hydrochloric acid. In the light-emitting diode of the second specific example, in addition to the above structure and similar to the light-emitting diode of the first specific example, a metal film is formed on the back surface 23 of the light-emitting diode transparent substrate. The light-emitting diode of the second specific example can be produced by a method which can be used to manufacture the light-emitting diode of the first specific example. In the present invention, the first side surface is preferably formed by a scribing method or a cutting method. By adopting the prior manufacturing method, the manufacturing cost can be reduced. Specifically, the process can produce a large number of light-emitting diodes and reduce manufacturing costs because it will avoid the necessity of leaving cutting chips after wafer separation. The latter method will bring an effect of increasing brightness. By adopting this method, the light-emitting efficiency can be increased by the first side surface and the brightness can be increased. The same mark, the second side is preferably formed by a cutting method. By adopting this method, the effect of increasing the yield can be brought about. The first side surface and the second side surface can be formed by a method such as wet etching, dry etching, scribing, and laser processing. Despite this, cutting methods superior to shape control and productivity have proven to be the most suitable. In addition to the above methods, any conventional technique for manufacturing a light-emitting diode can be used with respect to the method of manufacturing the light-emitting diode. The light-emitting diode can be fabricated by a method consisting of, for example, ohmic electrode formation, separation, inspection and evaluation, etc., -27-(24)(24)1335088. Furthermore, an illumination device such as a lamp can be manufactured by squeezing the light-emitting diode into the package. The light-emitting diode according to the third specific example of the present invention has the same structure as the second specific example of the present invention and can be manufactured by using the light-emitting diode method of the second specific example. Specifically, the third specific example is such that the transparent substrate forms a first side of the light-emitting surface of the nearly vertical light-emitting layer that is close to a portion of the light-emitting layer side and a second side that is inclined with respect to a portion of the light-emitting surface that is away from the light-emitting layer side. side. The light-emitting diode of the third specific example is further characterized by the second electrode having a corner portion of the compound semiconductor layer formed on the opposite side of the first electrode in the structure of the second specific example. The phrase "corner position of the compound semiconductor layer" used herein means, for example, a corner portion of four portions on the plane of the tetrahedral compound semiconductor. The present invention allows the second electrode to be formed at at least one of the corners of the four portions. By having the second electrode formed at the above position, the luminance of the light-emitting diode of the present invention can be imparted, because the portion of the light radiated from the light-emitting layer to the light-emitting surface can be emitted through the side surface of the compound semiconductor layer close to the second side. The second electrode may be formed at a position above the second side inclined structure. By having the second electrode formed at this position, the enhancement of brightness can be achieved because the light-emitting diode of the present invention can obtain the boosting port of the light-emitting efficiency of the inclined surface. Now, the light-emitting diodes specifically implemented by the present invention will be described below with reference to the accompanying drawings. In the following description, portions that appear in different figures and perform the same or equivalent functions will be denoted by like reference numerals and their description will not be repeated. -28-(25) (25) 1335088 In the following description, Example 1 and Example 2 are more clearly exemplifying the structure of the light-emitting diode according to the first specific example. The third embodiment and the fourth embodiment will more clearly exemplify the light-emitting diode structures according to the second specific example and the third specific example, respectively. Embodiment 1 : FIGS. 1 and 2 schematically illustrate a semiconductor light-emitting diode 10 manufactured in Embodiment 1. Fig. 1 is a plan view and Fig. 2 is a cross-sectional view taken along line II-II of Fig. 1. 3 is a cross-sectional view showing a layer structure of a semiconductor epitaxial stacked structure of the semiconductor light emitting diode 10 of Embodiment 1, and FIG. 4 is a view showing bonding of the substrate 14 to the semiconductor epitaxial stack of Embodiment 3. A cross-sectional view of the structure obtained from the structure. The semiconductor light-emitting diode 10 fabricated in Example 1 is a red light-emitting diode (LED) having an AlGalnP light-emitting portion 12. This is produced by bonding the formed epitaxial stacked structure to the GaAs semiconductor substrate 11 and the GaP substrate 14. The light-emitting diode 10 is fabricated by using an epitaxial wafer equipped with an epitaxial growth layer 13 which is sequentially stacked on a surface having a face inclined by 15° from the (100) plane. A semiconductor layer formed on a semiconductor substrate 11 formed of a -type GaAs single crystal. The Nie crystal growth layer 13 is an etch barrier layer 130A and an erbium-doped η-type GaAs formed by sequentially stacking a constituent semiconductor layer*, that is, a type 11_type (8 〇.5〇3〇.5) 0.5111 〇.5? The formed contact layer 131, the doped eleven 11-type (eight 1 ().7〇3〇.3) (».5111〇.5? formed by the lower cladding layer 132, 20 pairs of undoped sand (eight 1 〇 .2〇3〇.8)0.5111..5? and (8:1.7〇3..3)〇.5111〇.5? -29- (26) (26) 1335088 Forming the luminescent layer 1 33, The upper cladding layer 134 and the magnesium-doped ρ-type GaP layer 135 formed by doping magnesium p-type (Al〇.7Ga().3) Q 5InQ 5p are constructed. In the embodiment 1, the semiconductor layers 130A to 135 Using trimethylaluminum ((CH3)3A1), trimethylgallium ((CH3)3Ga) and trimethylindium ((CH3)3In) as a group III element, by low pressure metal organic chemical vapor deposition The method (MOCVD method) is individually stacked on the semiconductor substrate η to grow an epitaxial wafer. Regarding the raw material used for the doping table, biscyclopentadienyl magnesium (bis-(C5H5)2Mg) is used. The raw material of the hydrazine is dioxane (Si2H6). For the raw material of the group V component, phosphine (PH3) or hydrazine (AsH3) is used. The GaP layer 135 is grown under c and grown at 730 ° C to form the constituent compound semiconductor layers 13 0A to 134 of the epitaxial growth layer 13. The etch barrier layer 130A has a carrier concentration of about 2 x 1018 /cm ^ 3 and a concentration of about 0.2 μm The contact layer 131 has a carrier concentration of about 2 χ 10 18 /cm 3 and a layer thickness of about 0.2 μm. The η-type lower cladding layer 132 has a carrier concentration of about 8 χ 10 17 /cm 3 and about 2 μm. The layer thickness of the undoped light-emitting layer 133 has a layer thickness of 0.8 μm. The Ρ-type upper cladding layer 134 has a carrier concentration of about 2 x 1 〇 17 / cubic centimeter and a layer thickness of about 1 μm. The GaP layer 135 has a carrier concentration of about 3 x 10 1 /cm 3 and a layer thickness of about 9 μm. The p-type GaP layer 135 is mirror-polished by honing a region thereof to a depth of about 1 μm from the surface. Thereby, the mirror-polished 'the ρ-type GaP layer 135 will have a roughness of root mean square (rms) 値 0.18 nm. During this period, 14 b· to be applied to the P-type GaP layer 135 is prepared. Kb -30- (27) (27) 1335088 η-type GaP substrate 14 on a mirror-finished surface. For this supply The GaP substrate 14 was used, and ruthenium was added until the carrier concentration reached about 1 x 10 17 /cm 3 . A single crystal having a (111) surface orientation was used. This supply GaP substrate 14 has a diameter of 50 mm and a thickness of 250 microns. This GaP substrate 14 was obtained by honing and buffing with an rms 値 0.12 nm roughness before bonding to the p-type GaP layer 135. The GaP substrate 14 and the epitaxial wafer are transported into a common semiconductor material application device and the device is evacuated until a vacuum of 3 X 1 (Γ5). Next, the surface of the GaP substrate 14 and the epitaxial wafer The adhered contaminants are removed by exposure to an accelerated argon beam by treatment prior to bonding. Thereafter, they are bonded in a vacuum at room temperature. Next, from the bonded epitaxial wafer, An ammonia-based etchant selectively removes the semiconductor substrate 11. Thereafter, the etch stop layer 130A is removed with hydrochloric acid. The AuGeNi alloy is deposited on the contact surface 131 by vacuum evaporation until 0.2 micron. The thickness is formed to form an n-type ohmic electrode on the surface of the contact surface 131. The n-type ohmic electrode is formed by patterning using ordinary photolithography to form the first electrode 15. Thereafter, the electrode forming portion is removed The portion of the contact surface 131 is not. Next, the semiconductor layers 132 to 134 including the light-emitting layer 133 in the region for forming the germanium-electrode are selectively removed to expose the GaP layer 135. On the surface of the GaP layer 135 Deposited by vacuum evaporation The genus materials AuBe and Au until AuBe reaches a thickness of 0.2 μm and Au reaches a thickness of 〖micron to form a p-type ohmic electrode. At this time, the luminescent layer -31 - (28) (28) 1335088 133 has an area of 0.72 mm 2 . The metal material is further heat-treated at 450 ° C for 10 minutes to alloy them to form a first electrode 15 in the form of a low-impedance η-type ohmic electrode and a second electrode 16 in the form of a ρ-type ohmic electrode. Thereafter, gold is deposited on the surfaces of the first electrode and the second electrode by vacuum evaporation to a thickness of 1 μm to form a bonding pad 17 on the ohmic electrodes. Further, a thickness of 0.3 μm Si02 is formed. A protective film formed by the film covers a portion other than the pad 17. From the back surface 23' of the GaP substrate 14, a V-shaped groove is inserted by using a diamond wheel dicing machine until the inclined surface angle 20 reaches 15 degrees and the second The length of the side surface 22 is about 180 μm. The back surface 23 of the GaP substrate 14 is then roughened by hydrochloric acid. Next, by using a diamond wheel dicing machine at a distance of 1 mm from the first surface side. Cut into the crystal wafer to make The first side 12 is formed to be approximately perpendicular to the light-emitting layer 133 to form a length of about 80 μm. The contaminant layer and the contaminant generated by the cutting are removed by a mixture of sulfuric acid and hydrogen peroxide to manufacture a semiconductor light-emitting diode. 10. The back surface 23 of the semiconductor light-emitting diode 10 has an area of 0.8 mm 2 . The semiconductor light-emitting diode 10 thus fabricated is used as the LED chip 42 and as exemplified in FIGS. 8 and 9 A semiconductor light-emitting diode lamp (LED lamp) 1 is mounted. The LED lamp 1 is fixed by a silver paste and mounted on a mounting substrate 45, and the n-type ohmic electrode 15 of the LED chip 42 is wire-bonded to the gold wire, respectively. The n-electrode terminal 43 is set on the first surface of the mounting substrate 45 and the p-type ohmic electrode 16 is wire-bonded to, and then the joint portion is sealed with a common ring -32 - - 1335088 oxy-resin 41. Incidentally, aluminum nitride having good energy dissipation is used for the base body of the mounting substrate 45. When an electric current passes between the n-type and p-type ohmic electrodes 15 and 16 via the n-electrode terminal 43 and the p-electrode terminal 44 which are provided on the first surface of the mounting substrate 45, the LED lamp 1 will emit radiation 620 nm of red light at the main wavelength. The forward voltage (Vf) during the forward flow of 500 mA is about 2.4 volts, which reflects the excellent ohmic properties of the ohmic electrodes 15 and 16. When the forward current is set at 500 mA, the intensity of light emitted can reach 5 500 mcd, which reflects the structure of the light-emitting portion with high luminous efficiency and the fracture layer during the cutting of the epitaxial wafer. Removal will increase the light extraction efficiency to the outside. Example 2: A metal layer 24 having the same structure as that of Example 1 and having AuSn eutectic (melting point 283 ° C) formed on the back surface was produced as shown in Fig. 5. According to the same procedure as in the semiconductor light-emitting diode 1 of the first embodiment, the semiconductor light-emitting diode 10 of the second embodiment is used as the LED wafer 42 and the AuSn is used instead of the silver paste assembly to have the eighth and ninth drawings. A semiconductor light-emitting diode lamp (LED lamp) 1 of the structure to be exemplified. The semiconductor light-emitting diode lamp 1 manufactured using the semiconductor light-emitting diode 10 of Example 2 was evaluated in the same manner as in the first embodiment. The results are shown in Table 1 below. The forward voltage (Vf) during the forward flow of 500 mA is 2.4 volts. The light emission intensity will reach g! The brightness of J 6430 mcd reflects the fact that the light-emitting property is further enhanced and the silver paste is removed.

-33- (30) (30) 1335088 Absorption. Comparative Example 1 : A semiconductor light-emitting diode of Comparative Example 1 illustrated in Fig. 6 was produced by using a diamond wheel dicing machine similar to that of Example 1 while changing the outer shape of the side surface of the GaP substrate 14 by the following procedure. 10A. The first side 12 is nearly vertical and has a length of 10 microns and the second side has an angle of 30 degrees and a length of 300 microns. The area on the back is 0.5 square millimeters. The luminescent layer similar to Example 1 had an area of 0.72 square millimeters. According to the same procedure as in the semiconductor light-emitting diode 10 of the first embodiment, the semiconductor light-emitting diode 10A of the comparative example 1 is used as the LED wafer 42 to assemble the structure having the structures illustrated in FIGS. 8 and 9. Semiconductor light-emitting diode lamp (LED lamp). The same evaluation as in the case of Example 1 was carried out for the semiconductor light-emitting diode lamp using the semiconductor light-emitting diode 10A of Comparative Example 1. The results are shown in Table 1 below. The forward voltage (Vf) during the forward flow of 500 mA is 2.4 volts. The light-emitting intensity of the semiconductor light-emitting diode lamp of Comparative Example 1 was only 3290 mcd, because the semiconductor light-emitting diode 10A of Comparative Example 1 had a small-area back surface and revealed a defect of heat radiation. Comparative Example 2: A diamond wheel dicing machine similar to that of Example 1 was used to simultaneously change the profile of the side of the GaP substrate 14 by the following procedure (Fig. 7). Comparison of the inclined surface without tilt-34-(31) 1335088 The semiconductor light-emitting diode 1 of Example 2 is 〇B. The back has an area of 0.9 square millimeters. The luminescent layer similarly to Example 1 had an area of 0.72 square millimeters. According to the same procedure as in the semiconductor light-emitting diode 10 of the first embodiment, the semiconductor light-emitting diode 10B of the comparative example 2 is used as the LED wafer 42 to assemble the structure having the structures illustrated in FIGS. 8 and 9. Semiconductor light-emitting diode lamp (LED lamp). The same evaluation as in the case of Example 1 was carried out for the semiconductor light-emitting diode lamp using the semiconductor light-emitting diode 10B of Comparative Example 2. The results are shown in Table 1 below. The forward voltage (Vf) during the forward flow of 500 mA is 2.4 volts. The light emission intensity is only 4270 mcd, because the light-emitting efficiency is slightly lower because there is no inclined surface. Table 1 First side second side area (mm 2 ) 売 degree &lt; : mcd) Forward voltage (V) Tilt length Tilt length Luminous back IF = 100 IF = 500 IF = 100 IF = 500 angle (μm) Angle ( Micron) Layer mA mA mA mA Example 1 0 80 15 180 0.75 0.8 1150 5500 2 2.4 Example 2 0 80 15 180 0.75 0.8 1280 6430 2 2.4 Comparative Example 1 0 10 30 300 0.75 0.5 1190 3290 2 2.4 Comparative Example 2 0 250 0 - 0.75 0.9 860 4270 2 2.4

Embodiment 3: Another embodiment relating to the second specific example, the light-emitting diode according to Embodiment 3 will be described below with reference to the drawings.

Figs. 11 and 11 illustrate a semiconductor light emitting diode 10' of the third embodiment. Fig. 1 is a plan view and Fig. 1 is a cross-sectional view taken along line XI-XI of Fig. 10. Figure 12 is a cross-sectional view showing the layer structure of the semiconductor epitaxial stacked structure of the semiconductor light-emitting diode of the semiconductor light-emitting diode of the third embodiment of the present invention, and Figure 13 is an illustration of the base layer of the semiconductor epitaxial stacked structure of the first embodiment. A cross-sectional view of the structure obtained by bonding the material 14 to the semiconductor epitaxial stacked structure of Example 12. The semiconductor light-emitting diode 10 of the third embodiment is a red light-emitting diode (LED) having an AiGaInP light-emitting portion 12 and bonded to a semiconductor substrate 11 and a GaP substrate 14 made of GaAs by an epitaxial stack structure. Made from above. The light-emitting diode 10 of Embodiment 3 is produced by using a Jia-crystal wafer equipped with an epitaxial growth layer 13 which is sequentially stacked on a surface having a slope of 15° from the (100) plane. The semiconductor layer on the semiconductor substrate 11 formed of the ytterbium-doped gamma-type Ga As single crystal is composed of a semiconductor layer. The epitaxial growth layer 13 is formed by sequentially stacking a component semiconductor layer, that is, a buffer layer 130B formed by doping η-type Ga As, and a yttrium-doped type (contact layer 131 formed by AlQ.5Ga〇.sU.sIno.5P, The underlying coating layer 132, 20 formed by erbium 11-type (eight 1 (). 70 &amp; (). 3) (). 5111 (). 5? is not miserable (A1 〇. 2 G a 〇 8). 51 η.. 5 P and (A1 〇. 7 G a 〇. 3) 〇. 51 η 〇. 5 P formed luminescent layer 133, magnesium-doped ρ-type (Alo^Gao.Oo.sIno The upper cladding layer 134 and the magnesium-doped p-type GaP layer 135 formed by .sp are constructed. In the embodiment 1, the semiconductor layers 13 0 to 135 are stacked to form the semiconductor of the epitaxial growth layer 13 of the embodiment 1. The same manner of the layers 130A to 135 is individually stacked by a low pressure metal organic chemical vapor deposition method (MOCVD method), thereby forming an epitaxial wafer for use in Example 3. The GaAs barrier layer 130B has about 2xl018/cubic The carrier concentration of the centimeters and the layer thickness of about 0.2 μm. The contact layer 131 has a carrier concentration of about 2 x 1018 /cm ^ 3 and a layer thickness of about 1.5 μm. The -36- (33) (33) 1335088 η-package The layer 132 has about 8 x 1017 / cubic centimeter Sub-concentration and layer thickness of about 1 micron. The undoped light-emitting layer 133 has a layer thickness of 0.8 micron. The P-cladding layer 134 has a carrier concentration of about 2 x 1017 / cubic centimeter and a layer thickness of about 1 micron. The GaP layer 135 has a carrier concentration of about 3 x 1018 / cubic centimeter and a layer thickness of about 9 microns. The p-type GaP layer 135 has a region that is honed to mirror finish to a depth of about 1 micrometer from the initial surface. By this mirror polishing, the p-type GaP layer 135 will have a roughness of 0.18 nm. During this period, η - to be mounted on the mirror-finished surface of the P-type GaP layer 135 is prepared. The GaP substrate 14 was prepared in the same manner as in the manufacture of the light-emitting diode 10 of Example 1. The GaP substrate 14 required for the production of the light-emitting diode 10 of Example 3 was prepared. And the epitaxial wafer system is transported into a common semiconductor material application device and the inside of the device is evacuated until a vacuum of 3 X 10_5. Thereafter, it is placed in a vacuum in a group that has been disposed of in order to avoid carbon contamination. The GaP substrate 14 inside the device is heated to a temperature of about 800 ° 同时 while the GaP is The surface of the material 14 is exposed to argon ions accelerated to an energy of 800 eV. As a result, a bonding layer 14 1 having a non-stoichiometric composition is formed on the surface of the GaP substrate 14. Then, formation of the bonding layer 141 stops argon. The ionizing radiation and cooling the GaP substrate 14 to room temperature. Next, the GaP substrate 14 and the first surface of the GaP layer 135 which are provided in the surface region by the bonding layer 141 composed of the non-stoichiometric composition are exposed to the argon beam neutralized by the electron collision for 3 minutes. After -37-(34)(34)1335088, the GaP layer 135 and the GaP substrate 14 are overlapped in a vacuum-maintaining mounting device and a load is applied to apply a pressure of 20 g/cm 2 on each surface, and The substrate and the layer were thus joined at room temperature (cf. Fig. 13). When the bonded wafer was taken out from the vacuum chamber of the mounting device and the interface was analyzed, it was found that a GaQ.6P〇.4 bonding layer 141 having a non-stoichiometric composition was formed in the interface. The bonding layer 141 has a thickness of about 3 nm, an oxygen atom concentration of 7 x 1018 /cm ^ 3 , a grade measured by a common SIMS method, and a carbon atom concentration of 9 x 1018 / cm ^ 3 . Next, an ammonia-based etchant selectively removes the semiconductor substrate 11 and the GaAs buffer layer 130B from the bonded epitaxial wafer. For the purpose of forming the ohmic electrode 15 on the contact surface 131, an AuGeNi alloy having a thickness of 0.5 μm is deposited by vacuum evaporation, Pt having a thickness of 0.2 μm is deposited, and Au having a thickness of 1 μm is deposited to fabricate n-type ohms. electrode. Next, the n-type ohmic electrode is patterned by ordinary photolithography to form the first electrode 15. Next, the semiconductor layers 131 to 134 in the region for forming the p-electrode are selectively removed to expose the GaP layer 135. On the surface of the GaP layer 135, AuBe and Au having thicknesses of 0.2 μm and 1 μm, respectively, were deposited by vacuum evaporation of the metal material to form a p-type ohmic electrode. Further, 'the electrodes are alloyed by performing heat treatment at 450 ° C for 1 minute to form a first electrode 15 in the form of a low-impedance η-type ohmic electrode and a second electrode 16 in the form of a Ρ-type ohmic electrode (Comparative Figure 10 and Figure 11). Next, from the back side of the GaP substrate 14, a V-shaped groove is inserted by using a diamond wheel-38-(35) 1335088 dicing machine to provide an angle of 70° (by the second side 143 and the parallel light-emitting surface) The angle α) formed by the surface gives the inclined surface and the size of 80 μm to the first side 42. Next, from the surface of the first surface, the wafer was cut at intervals of 3 50 μm to fabricate a wafer. The production of the semiconductor light-emitting diode (wafer) 10' is completed by etching and removing the contaminant generated by the fracture layer and the cut by a mixture of sulfuric acid and hydrogen peroxide. By using the semiconductor light-emitting diode 10 fabricated as described above as the LED wafer 42, a semiconductor light-emitting diode lamp (LED lamp) 1 is mounted as exemplified in Figs. The LED lamp 1 is fixed with a silver (Ag) paste and mounted on a mounting substrate 42, and the n-type ohmic electrode 15 of the LED wafer 42 is wire-bonded to the mounting by a gold wire 46, respectively. The n-electrode terminal 43 on the first surface of the substrate 45 and the p-type ohmic electrode 16 are wire-bonded to the p-electrode terminal 44, and then the joint portion is sealed with a common epoxy resin 41. Incidentally, aluminum nitride having good energy dissipation is used as the base material of the mounting substrate 45. The ohmic electrode 15 includes an attenuating electrode 15a and a linear electrode 15b*. The current passes through the n-type and p-type ohmic electrodes 15 and 16 via the n-electrode terminal 43 and the p-electrode terminal 44 which are provided on the surface of the mounting substrate 45. When in between, red light with a dominant wavelength of 62 nm will be emitted. The forward voltage (V f ) generated during the forward current flow of 2 mA is about 1.95 volts. This reflects the good ohmic properties of the ohmic electrodes 15 and 16. The forward current is set at 20 mA to produce a high luminance of 600 racd, which reflects the high-luminance efficiency of the light-emitting portion junction -39- (36) and the fracture layer during the dicing process. The removal efficiency is increased by the removal to the outside. Embodiment 4: Now, with respect to another specific embodiment of the third specific example, the light-emitting diode according to Embodiment 4 will be described below with reference to the drawings. The semiconductor light-emitting diode 1 of Embodiment 4 is a red light-emitting diode (LED) equipped with the AlGalnP light-emitting portion 12 and bonded to the epitaxial stacked structure on the semiconductor substrate 11 made of Ga As. The GaP substrate 14 is made (cf. Fig. 16 and Fig. 17). Fig. 16 is a plan view thereof and Fig. 17 is a sectional view taken along line XVII-XVII of Fig. 16. The semiconductor light-emitting diode 10 of Example 4 was fabricated by using the semiconductor epitaxial stack used in the light-emitting diode of Example 3 and was carried out in the same manner as in the procedure of Example 3. The light-emitting diode 10 of the fourth embodiment is constructed similarly to the light-emitting diode 10 of the third embodiment except that the second electrode 16 is formed at a corner position of the compound semiconductor layer on the opposite side of the first electrode 15, the electrode The 1 5 and 1 6 systems are configured in a manner. That is, the light-emitting diode 10 of the fourth embodiment is constructed such that the light-emitting surface of the side of the GaP substrate 14 as a transparent substrate forming the nearly vertical light-emitting layer 133 is close to the first side 142 of the side portion of the light-emitting layer 133 and away from The portion on the side of the light-emitting layer 133 is inclined to the second side surface 143 of the light-emitting surface, and the second side surface 143 is inclined toward the inner side of the semiconductor layer at an angle a. (37) 1335088 A semiconductor light-emitting diode lamp (LED lamp) 1 having a structure to be exemplified in FIGS. 14 and 15 is an LED light-emitting diode 10 as the LED chip 42 by using the semiconductor light-emitting diode 10 of the fourth embodiment. This was produced in the same manner as in the case of using the semiconductor light-emitting diode 10 of Example 3. When a current passes between the η-type and ρ-type ohmic electrodes via the η-electrode terminal 43 and the ρ-electrode terminal 44 provided on the surface of the mounting substrate 45, red light having a main wavelength of 62 nm is emitted. Light. The forward voltage (Vf) generated during the forward current flow of 20 milliamps reaches about 2.10 volts, which reflects the good ohmic properties of the ohmic electrodes 15 and 16. The forward current is set at 20 mA to produce a high luminance of 800 mcd, which reflects the structure of the light-emitting portion with high luminous efficiency and the removal of the fracture layer during cutting into the wafer to the external discharge. Increased efficiency. Comparative Example 3: The semiconductor light-emitting diode 10C of Comparative Example 3 exemplified in FIGS. 18 and 19 was fabricated by bonding a transparent substrate 14 to the semiconductor layer in the same manner as in Example 3 except The second side surface of the transparent substrate 14 is formed perpendicular to the light-emitting portion 13 as shown in Fig. 19. Incidentally, the n-type ohmic electrode 15c formed on the surface of the contact layer 131 does not form a mesh pattern as shown in Fig. 18, and the P-type ohmic electrode 16c formed on the surface of the GaP layer 135 is shaped such that it is formed. The surrounding portion is covered with a compound semiconductor layer. Comparing the semiconductor light-emitting diode of Example 3, a wafer having the same size as that of the tantalum-41-(38) (38) 1335088 diode of Example 3 was obtained. After the cutting, the fracture layer and the contaminants produced by the cutting are etched and removed using a mixture of sulfuric acid and hydrogen peroxide. The semiconductor light-emitting diode lamp (LED lamp) having the structure to be exemplified in FIGS. 14 and 15 follows the procedure of using the semiconductor light-emitting diode 10 of the third embodiment but uses the semiconductor light-emitting diode of the comparative example 3. The pole body 10C is assembled. Using the LED lamp of the semiconductor light-emitting diode 10C of Comparative Example 3, when the current passes through the η-electrode terminal 43 and the ρ-electrode terminal 44 placed on the surface of the mounting substrate 45, the η-type and p-type ohmic electrodes are passed. When between 15c and 16c, red light having a dominant wavelength of 620 nm will be emitted. The forward voltage (Vf) during the forward current flow of 20 milliamps reaches approximately 2.30 volts. When the forward current is set at 20 mA, the luminescence intensity generated is barely up to 200 mcd. Industrial Applicability The light-emitting diode of the present invention is characterized by being superior in energy dissipating property and exhibiting high brightness, and can be used together with large electric power due to superior energy dissipation. Further, the light-emitting diode of the present invention can emit light of red, orange, yellow or yellow-green. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a semiconductor light emitting diode 10 of the first embodiment. Figure 2 is a cross-sectional view taken along line II-II of Figure 1. -42- (39) (39) 1335088 Fig. 3 is a schematic cross-sectional view showing the structure of the semiconductor epitaxial stacked structure of Example 1. Fig. 4 is a schematic cross-sectional view showing the structure of a substrate bonded to the semiconductor epitaxial stacked structure of Example 3. Fig. 5 is a plan view showing a semiconductor light emitting diode 10 of the second embodiment. Fig. 6 is a plan view showing a comparison of the semiconductor light-emitting diode A of Comparative Example 1. Fig. 7 is a plan view showing a comparison of the semiconductor light-emitting diode B of Comparative Example 2. Fig. 8 is a plan view showing a semiconductor light-emitting diode bulb 1 using the semiconductor light-emitting diode 10 of the first embodiment as the LED wafer 42. Figure 9 is a cross-sectional view of the semiconductor light-emitting diode bulb 1 taken along line IX-IX of Figure 8. Fig. 10 is a plan view showing the semiconductor light-emitting diode of Example 3; Figure 11 is a cross-sectional view taken along line XI-XI of Figure 10. Fig. 12 is a cross-sectional view showing the layer structure of the semiconductor epitaxial stacked structure of the semiconductor light-emitting diode 10 of the third embodiment. Fig. 13 is a schematic cross-sectional view showing the structure of a GaP substrate 14 having a semiconductor crystal stacked structure bonded to Fig. 12. Fig. 14 is a plan view showing a semiconductor light-emitting diode bulb 1 using the semiconductor light-emitting diode of the third embodiment as the LED wafer 42. Figure 15 is a cross-sectional view taken along line XV-XV of Figure 14. -43- (40) (40) 1335088 Fig. 16 is a plan view showing the semiconductor light-emitting diode 10 of the fourth embodiment. Figure 17 is a cross-sectional view taken along line XVII-XVII of Figure 16. Fig. 18 is a plan view showing a comparison of the semiconductor light-emitting diode C of Comparative Example 3. Figure 19 is a cross-sectional view taken along line XIX-XIX of Figure 18. [Description of main component symbols] α: Angle formed by the surface of the second side and the parallel light-emitting surface D: First side length 1 : LED lamp 10 : Semiconductor light-emitting diode 10A: Semiconductor light-emitting diode 10B: Semiconductor light-emitting diode 2 Polar body 10C: semiconductor light-emitting diode 1 1 : semiconductor substrate 12 made of GaAs: AlGalnP light-emitting portion 13: epitaxial growth layer 1 4 : GaP substrate U: first electrode 15 &amp;: attenuating electrode 1 5b: linear Electrode 15C: n-type ohmic electrode - 44 - (41) Ι 335 Ό 88 1 6 : second electrode 16c: p - type ohmic electrode 1 7 : pad 20 : inclination angle 21 : first side 22 : second side 23 : back

4 1 : Epoxy 42 : LED wafer 43 : η-electrode terminal 44 : ρ-electrode terminal 45 : mounting substrate 4 6 · gold wire 130 Α : etching barrier 1 3 0 Β : buffer layer

1 3 1 : contact layer 1 32 : lower cladding layer 133 : light-emitting layer 1 34 : upper cladding layer 1 35 : magnesium-doped p-type GaP layer 141 : bonding layer 142 : first side surface 143 : second side surface - 45 -

Claims (1)

1335088 X. Patent Application No. 95148554 Patent Application Revision of Chinese Patent Application Revision Amendment of September 21, 1999. 1. A light-emitting diode having a transparent substrate and a light-emitting layer made of a compound semiconductor, wherein The area (A) of the light-extracting surface of the first electrode and the second electrode having a polarity different from the first electrode, the area (B) of the light-emitting layer formed close to the light-emitting surface, and the The relationship between the area (C) of the back surface of the light-emitting diode on the opposite side of the one electrode and the second electrode forming side satisfies the relationship of Formula A &gt; C &gt; B. 2. The light-emitting diode according to claim 1, wherein the light-emitting layer has a composition of the formula (AlxGauhlm-YP; wherein 0SXS1, 0 &lt; YS1, and the transparent substrate has l〇〇W/mk or more The light-emitting diode of claim 1 or 2, wherein the transparent substrate has a first side surface adjacent to the light-emitting layer and a second side surface adjacent to the back surface of the transparent substrate, and wherein The first side has a tilt angle that is smaller than the tilt angle of the second side. 4. The light emitting diode of claim 3, wherein the first side is vertical and the second side is skewed. a light-emitting diode comprising a compound semiconductor layer equipped with a light-emitting portion. The light-emitting portion contains a light-emitting layer having a composition of the formula (AlxGa^jOYlnuP; wherein 0SXS1 and 〇&lt;YU, having a compound semiconductive 1335088 a transparent substrate of the bulk layer, and a main light-emitting surface on which the first electrode and the second electrode having a polarity different from the first electrode are formed, wherein the second electrode is formed on a side exposed on the opposite side of the first electrode a corner position on the semiconductor layer and the transparent substrate has a side surface including a first side surface substantially perpendicular to a light emitting layer emitting surface on an adjacent side of the light emitting layer and a first tilting surface toward a light emitting surface on a far side of the light emitting layer 6. The light-emitting diode according to item 3 of the patent application, wherein the inclination angle of the second side is 10 degrees or more and 30 degrees or less. 7. If the patent application scope is the third item The light emitting diode, wherein the second side has a tilt angle of 10 degrees or more and 20 degrees or less. 8. The light emitting diode according to claim 5, wherein the second side is An angle of between 5 5 and 80 degrees is formed between the surfaces of the light-emitting surface. 9 · The light-emitting diode of claim 3, wherein the first side has 5 〇 μηι or more and ΙΟΟμιη Or a length of the second side having a length of ΙΟΟμηι or more and 250 μηι or less. 10. The light-emitting diode of claim 5, wherein the first side has a range of 30 μm τι to ΙΟΟμηι Length. The light-emitting diode of the first or fifth aspect, wherein the transparent substrate is made of gallium phosphide (GaP). The light-emitting diode of claim 5, wherein the transparent substrate is substantially Is a η-type GaP single crystal and has a surface orientation of (100) or (1 1 1 ). 1 3 · A light-emitting diode according to item 5 of the patent application, wherein the transparent -2- 1335088 substrate has a The thickness of 50 μηι to 300 μηι. The light-emitting diode of claim 5, wherein the transparent substrate is made of tantalum carbide (SiC). 15. The light-emitting diode of claim 1, wherein the transparent substrate has a back surface of a rough surface that is astigmatizable. 16. The light-emitting diode of claim 1, wherein the transparent substrate has a back surface on which a metal film is formed. 17. The light-emitting diode of claim 16, wherein the metal film on the back surface of the transparent substrate contains a metal having a melting point of 4 〇〇 or lower. 18. The light-emitting diode of claim 16 wherein the metal film is made of an alloy. I9. The light-emitting diode of claim 1, wherein the light-emitting diode system is used with a power of 1.5 W or more and the back surface area is 0·6 mm 2 or more. The light-emitting diode of claim 15, wherein the transparent substrate is a GaP substrate, and the back surface thereof is obtained by treating the GaP substrate with hydrochloric acid. 21. The light-emitting diode of claim 3, wherein the first and second sides of the transparent substrate are formed by a dicing method. 22. The light-emitting diode of claim 5, wherein the second electrode is positioned above the inclined structure of the second side. 23. The light-emitting diode of claim 5, wherein the electrode of the -3- 1335088 has a lattice shape. 24. The light-emitting diode of claim 5, wherein the first electrode comprises a pad electrode and a linear electrode having a width of ΙΟμηι or less. 25. The light-emitting diode of claim 5, wherein the light-emitting portion comprises a GaP layer and the second electrode is formed on the GaP layer. 26. The light-emitting diode of claim 5, wherein the first electrode has an η-type polarity and the second electrode has a p-type polarity. 27. The light-emitting diode of claim 5, wherein the inclined second side of the transparent substrate has a roughness. 28. A method of producing a light-emitting diode comprising the steps of: forming a light-emitting portion comprising a light-emitting layer having a composition of the formula (AlxGa|_x) YIni-YP; wherein 0SXS1 and 00&lt;Yfl; subsequently containing the light-emitting portion a compound semiconductor layer is attached to the transparent substrate; a first electrode having a main light emitting surface attached to an opposite side of the transparent substrate and a second electrode having a polarity different from the first electrode are formed to be exposed on the compound semiconductor layer a corner position on a portion such that the second electrode is disposed on an opposite side of the first electrode; and a side of the transparent substrate is formed by a cutting process to form a first surface substantially perpendicular to a light emitting layer light emitting surface on an adjacent side of the light emitting layer a side surface and a second side inclined to the light emitting surface on the side away from the light emitting layer. 29. The method of producing a light-emitting diode according to claim 28, wherein the first side is formed by a scribe line breaking method. -4 - 1335088 3 0. The method of producing a light-emitting diode according to claim 28, wherein the first side is formed by a cutting method. -5-