JP6833760B2 - 半導体発光素子の製造方法 - Google Patents
半導体発光素子の製造方法 Download PDFInfo
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- JP6833760B2 JP6833760B2 JP2018095304A JP2018095304A JP6833760B2 JP 6833760 B2 JP6833760 B2 JP 6833760B2 JP 2018095304 A JP2018095304 A JP 2018095304A JP 2018095304 A JP2018095304 A JP 2018095304A JP 6833760 B2 JP6833760 B2 JP 6833760B2
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- semiconductor
- light emitting
- semiconductor light
- epitaxial
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- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Description
10、210、510 成長基板
112、2112、5112 n型半導体層
114、2114、5114 活性層
116、2116、5116 p型半導体層
110、2110、5110 半導体エピタキシャル積層
120a、120b、2120a、2120b、5120b p型電極
20、220、520、60 第1搭載基板
135、2135、5135 第1接着層
130a、130b、2130a、2130b、130b’、5120a n型電極
140、2140 金属酸化物透明導電層
150、2150 反射層
201、2201、501 第1エピタキシャルユニット
202、2202、502、501’ 第2エピタキシャルユニット
230、2230、5230 第2接着層
5280 透明金属酸化物導電層
30、530 第2搭載基板
200、300、400、500、600 半導体発光素子
2123 パターン化犠牲層
130a’、5120b’ p型延伸電極
130a’’ n型延伸電極
134 導電孔
132、232 絶縁層
202’ 第3エピタキシャルユニット
125 金属導電接続構造
120b’、1310 p型電極パッド
120b’’、1320 n型電極パッド
40 第1透明構造
410 絶縁散乱層
411、412 開口
530’ 第2搭載基板ユニット
501’ 十字形エピタキシャルユニット
260、560 ハンダ
50’、20’ サブキャリア
5000、2000 発光装置
A’、B’ 対称面
D 方向
Claims (10)
- 半導体発光素子の製造方法であって、
第1基板を提供するステップと、
前記第1基板に第1半導体ユニット及び第2半導体ユニットを接着させるステップと、
フリップチップ方法で前記第2半導体ユニットを搭載基板に接続させるステップと、
前記第1基板と前記第2半導体ユニットを分離させるステップと、
前記第1基板を除去するステップとを含み、
前記第1半導体ユニットが第1幾何形状と第1面積を有し、前記第2半導体ユニットが第2幾何形状と第2面積を有し、
前記第1幾何形状と前記第2幾何形状が異なり、前記第1面積が前記第2面積より小さく、かつ、前記第1半導体ユニットの数と前記第2半導体ユニットの数が異なる、半導体発光素子の製造方法。 - 前記搭載基板の表面には、前記第2半導体ユニットと電気的に接続するパターン化導電接続構造を有する、請求項1に記載の半導体発光素子の製造方法。
- 半導体エピタキシャル積層を提供するステップをさらに含み、
エッチング方法で前記半導体エピタキシャル積層を前記第1半導体ユニットと前記第2半導体ユニットに分離する、請求項1に記載の半導体発光素子の製造方法。 - 前記第1基板上に第1接着層を形成する、請求項1に記載の半導体発光素子の製造方法。
- 前記第1接着層の材料は二酸化ケイ素を含む、請求項4に記載の半導体発光素子の製造方法。
- 前記第1接着層を除去するステップをさらに含む、請求項4に記載の半導体発光素子の製造方法。
- 化学気相成長又は物理気相成長技術によって、前記第1半導体ユニット及び前記第2半導体ユニットの側壁に絶縁層を蒸着形成するステップをさらに含む、請求項1に記載の半導体発光素子の製造方法。
- 前記絶縁層の材質は二酸化ケイ素、窒化ケイ素、酸化アルミニウム、窒化アルミニウム又はこれらの組み合わせを含む、請求項7に記載の半導体発光素子の製造方法。
- 前記搭載基板の材質はサファイア、酸化リチウムアルミニウム、酸化亜鉛、リン化ガリウム、ガラス、有機高分子基板又は窒化アルミニウムを含む、請求項1に記載の半導体発光素子の製造方法。
- 前記第2半導体ユニットの一方側において、前記第1接着層と対応する第2接着層を形成するステップをさらに含む、請求項4に記載の半導体発光素子の製造方法。
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Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013103079A1 (de) * | 2013-03-26 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
DE102014102029A1 (de) * | 2014-02-18 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement |
CN105336706A (zh) * | 2014-08-06 | 2016-02-17 | 晶能光电(江西)有限公司 | 一种高压led芯片的制备方法 |
GB201418810D0 (en) | 2014-10-22 | 2014-12-03 | Infiniled Ltd | Display |
GB201418772D0 (en) | 2014-10-22 | 2014-12-03 | Infiniled Ltd | Display |
CN105870288B (zh) * | 2016-04-27 | 2018-08-14 | 天津三安光电有限公司 | 发光二极管及其制作方法 |
CN105826355B (zh) * | 2016-05-03 | 2017-03-08 | 京东方科技集团股份有限公司 | 一种显示面板的制作方法 |
US10153401B2 (en) * | 2016-12-16 | 2018-12-11 | Intel Corporation | Passivated micro LED structures suitable for energy efficient displays |
US11056614B2 (en) * | 2017-01-10 | 2021-07-06 | PlayNitride Inc. | Micro light-emitting diode chip |
TWI607558B (zh) * | 2017-01-10 | 2017-12-01 | 錼創科技股份有限公司 | 微型發光二極體晶片 |
US10353243B2 (en) * | 2017-08-01 | 2019-07-16 | Innolux Corporation | Display device |
US11955574B2 (en) * | 2017-10-05 | 2024-04-09 | International Business Machines Corporation | Photovoltaic cell form ultra-small IOT device with multi-level voltage output |
JP6431631B1 (ja) * | 2018-02-28 | 2018-11-28 | 株式会社フィルネックス | 半導体素子の製造方法 |
CN109148652B (zh) * | 2018-08-23 | 2020-08-25 | 上海天马微电子有限公司 | 无机发光二极管显示面板及其制作方法和显示装置 |
US11664363B2 (en) * | 2018-10-17 | 2023-05-30 | Seoul Viosys Co., Ltd. | Light emitting device and method of manufacturing the same |
US10796928B1 (en) * | 2019-06-27 | 2020-10-06 | Advanced Semiconductor Engineering, Inc. | Wiring structure and method for manufacturing the same |
WO2021075728A1 (en) * | 2019-10-15 | 2021-04-22 | Samsung Electronics Co., Ltd. | Display module and manufacturing method thereof |
KR20220046739A (ko) * | 2020-10-07 | 2022-04-15 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
CN112993223B (zh) * | 2021-02-07 | 2022-04-12 | 西南科技大学 | 一种双层包覆结构的锂离子电池负极材料及其制备方法 |
JP7367743B2 (ja) | 2021-10-18 | 2023-10-24 | 信越半導体株式会社 | 接合型半導体ウェーハの製造方法 |
JP7450158B2 (ja) * | 2021-12-23 | 2024-03-15 | 日亜化学工業株式会社 | 発光装置の製造方法 |
WO2023243255A1 (ja) * | 2022-06-15 | 2023-12-21 | 信越半導体株式会社 | 接合型発光素子ウェーハの製造方法およびマイクロledの移載方法 |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5606572A (en) | 1994-03-24 | 1997-02-25 | Vixel Corporation | Integration of laser with photodiode for feedback control |
JP3906653B2 (ja) * | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 画像表示装置及びその製造方法 |
JP3906654B2 (ja) | 2000-07-18 | 2007-04-18 | ソニー株式会社 | 半導体発光素子及び半導体発光装置 |
US6888171B2 (en) * | 2000-12-22 | 2005-05-03 | Dallan Luming Science & Technology Group Co., Ltd. | Light emitting diode |
JP3748779B2 (ja) * | 2001-02-16 | 2006-02-22 | 松下電器産業株式会社 | 半導体素子の実装方法、及び熱可塑性若しくは熱硬化性のシート |
JP2002314053A (ja) * | 2001-04-19 | 2002-10-25 | Sony Corp | チップ部品の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
JP2003158296A (ja) | 2001-11-22 | 2003-05-30 | Sharp Corp | 窒化物半導体発光デバイスチップとその製造方法 |
JP3776824B2 (ja) * | 2002-04-05 | 2006-05-17 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
JP4005001B2 (ja) * | 2002-07-24 | 2007-11-07 | Tdk株式会社 | 機能性層を有する転写用機能性フィルム、その機能性層が付与された物体及びその製造方法 |
JP5022552B2 (ja) * | 2002-09-26 | 2012-09-12 | セイコーエプソン株式会社 | 電気光学装置の製造方法及び電気光学装置 |
US7180099B2 (en) * | 2002-11-11 | 2007-02-20 | Oki Data Corporation | Semiconductor apparatus with thin semiconductor film |
JP2004319538A (ja) | 2003-04-10 | 2004-11-11 | Seiko Epson Corp | 半導体装置の製造方法、集積回路、電子光学装置及び電子機器 |
US6913985B2 (en) * | 2003-06-20 | 2005-07-05 | Oki Data Corporation | Method of manufacturing a semiconductor device |
TWI223460B (en) * | 2003-09-23 | 2004-11-01 | United Epitaxy Co Ltd | Light emitting diodes in series connection and method of making the same |
FR2864970B1 (fr) * | 2004-01-09 | 2006-03-03 | Soitec Silicon On Insulator | Substrat a support a coefficient de dilatation thermique determine |
CN100350643C (zh) * | 2004-03-29 | 2007-11-21 | 晶元光电股份有限公司 | 具有欧姆金属凸块的有机粘结发光元件 |
JP2005302889A (ja) * | 2004-04-08 | 2005-10-27 | Sharp Corp | 半導体製造装置およびそれを用いた半導体装置の製造方法 |
JP2005347647A (ja) * | 2004-06-04 | 2005-12-15 | Sony Corp | 素子および素子転写方法 |
JP2006093466A (ja) | 2004-09-24 | 2006-04-06 | Toshiba Corp | 多波長半導体レーザ素子および多波長半導体レーザ装置 |
TWI320294B (en) * | 2005-02-23 | 2010-02-01 | Organic semiconductor light-emitting element and display device | |
CN100449806C (zh) * | 2005-04-12 | 2009-01-07 | 夏普株式会社 | 氮化物基半导体发光装置及其制造方法 |
JP4767035B2 (ja) * | 2005-04-12 | 2011-09-07 | シャープ株式会社 | 窒化物系半導体発光素子およびその製造方法 |
TWI260800B (en) * | 2005-05-12 | 2006-08-21 | Epitech Technology Corp | Structure of light-emitting diode and manufacturing method thereof |
KR100714589B1 (ko) | 2005-10-05 | 2007-05-07 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조 방법 |
FR2892594B1 (fr) * | 2005-10-21 | 2007-12-07 | Saint Gobain | Structure lumineuse comportant au moins une diode electroluminescente, sa fabrication et ses applications |
KR100640497B1 (ko) * | 2005-11-24 | 2006-11-01 | 삼성전기주식회사 | 수직 구조 질화갈륨계 발광다이오드 소자 |
TWI335088B (en) | 2005-12-22 | 2010-12-21 | Showa Denko Kk | Light-emitting diode and method for fabrication thereof |
US7777240B2 (en) * | 2006-10-17 | 2010-08-17 | Epistar Corporation | Optoelectronic device |
KR101519038B1 (ko) * | 2007-01-17 | 2015-05-11 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 프린팅기반 어셈블리에 의해 제조되는 광학 시스템 |
JP2008252069A (ja) * | 2007-03-06 | 2008-10-16 | Sanyo Electric Co Ltd | 半導体レーザ素子の製造方法および半導体レーザ素子 |
CN100508186C (zh) * | 2007-05-23 | 2009-07-01 | 广州南科集成电子有限公司 | 贴片式发光二极管及制造方法 |
JP5162979B2 (ja) * | 2007-06-28 | 2013-03-13 | 日亜化学工業株式会社 | 発光装置 |
CN101345277B (zh) * | 2007-07-12 | 2011-08-24 | 台达电子工业股份有限公司 | 发光二极管装置的制造方法 |
JP2009059883A (ja) * | 2007-08-31 | 2009-03-19 | Toyoda Gosei Co Ltd | 発光装置 |
DE102008021402B4 (de) * | 2008-04-29 | 2023-08-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Oberflächenmontierbares Leuchtdioden-Modul und Verfahren zur Herstellung eines oberflächenmontierbaren Leuchtdioden-Moduls |
US20100001312A1 (en) * | 2008-07-01 | 2010-01-07 | Epistar Corporation | Light-emitting device and method for manufacturing the same |
JP5123269B2 (ja) * | 2008-09-30 | 2013-01-23 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法 |
JP2010114106A (ja) * | 2008-11-04 | 2010-05-20 | Canon Inc | 機能性領域の移設方法、ledアレイ、ledプリンタヘッド、及びledプリンタ |
JP5377985B2 (ja) * | 2009-01-13 | 2013-12-25 | 株式会社東芝 | 半導体発光素子 |
JP2010177390A (ja) * | 2009-01-29 | 2010-08-12 | Sony Corp | 素子の移載方法および表示装置の製造方法 |
JP5444798B2 (ja) * | 2009-04-10 | 2014-03-19 | ソニー株式会社 | 素子の移載方法 |
EP2430652B1 (en) * | 2009-05-12 | 2019-11-20 | The Board of Trustees of the University of Illionis | Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays |
CN101908534B (zh) * | 2009-06-08 | 2012-06-13 | 晶元光电股份有限公司 | 发光装置 |
TWI398966B (zh) * | 2009-06-08 | 2013-06-11 | Epistar Corp | 發光元件及其製造方法 |
US8173456B2 (en) * | 2009-07-05 | 2012-05-08 | Industrial Technology Research Institute | Method of manufacturing a light emitting diode element |
US8153475B1 (en) * | 2009-08-18 | 2012-04-10 | Sorra, Inc. | Back-end processes for substrates re-use |
US8334152B2 (en) * | 2009-12-18 | 2012-12-18 | Cooledge Lighting, Inc. | Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate |
US9165833B2 (en) | 2010-01-18 | 2015-10-20 | Semiconductor Components Industries, Llc | Method of forming a semiconductor die |
KR100999784B1 (ko) * | 2010-02-23 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
KR101423722B1 (ko) * | 2010-04-27 | 2014-08-01 | 서울바이오시스 주식회사 | 복수개의 발광셀들을 갖는 발광 소자 및 그것을 제조하는 방법 |
TWI427829B (zh) | 2010-07-26 | 2014-02-21 | Epistar Corp | 一種半導體光電元件及其製作方法 |
JP4836218B1 (ja) | 2010-07-30 | 2011-12-14 | Dowaエレクトロニクス株式会社 | 半導体素子と半導体素子の製造方法 |
CN102376826B (zh) * | 2010-08-06 | 2014-08-06 | 晶元光电股份有限公司 | 半导体光电元件及其制作方法 |
US9012948B2 (en) * | 2010-10-04 | 2015-04-21 | Epistar Corporation | Light-emitting element having a plurality of contact parts |
JP5739698B2 (ja) | 2011-03-22 | 2015-06-24 | スタンレー電気株式会社 | 半導体素子の製造方法 |
TWI489656B (zh) * | 2011-03-25 | 2015-06-21 | Samsung Electronics Co Ltd | 發光二極體、發光二極體之製造方法、發光二極體模組及發光二極體模組之製造方法 |
CN102214749A (zh) * | 2011-06-20 | 2011-10-12 | 云峰 | 一种垂直结构发光二极管及其薄膜与衬底剥离的方法 |
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