CN104798175A - 半导体发光元件及其制作方法 - Google Patents

半导体发光元件及其制作方法 Download PDF

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Publication number
CN104798175A
CN104798175A CN201380059691.6A CN201380059691A CN104798175A CN 104798175 A CN104798175 A CN 104798175A CN 201380059691 A CN201380059691 A CN 201380059691A CN 104798175 A CN104798175 A CN 104798175A
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substrate
emitting elements
semiconductor light
preparation
semiconductor
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CN104798175B (zh
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林俊宇
倪庆怀
陈怡名
徐子杰
邱新智
吕志强
林敬倍
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Epistar Corp
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Epistar Corp
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    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • H—ELECTRICITY
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    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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Abstract

一种半导体发光元件的制作方法及半导体发光元件。该方法包含：提供第一基板(20)；提供半导体外延叠层(110)；提供第一粘着层(135)连接第一基板(20)及半导体外延叠层(110)；图案化半导体外延叠层(110)为多个外延单元并使彼此自第一基板(20)上分离；提供第二基板(30)，具有一表面；转移上述多个第二外延单元至第二基板(30)的表面上；切割第一基板(20)以形成多个第一半导体发光元件以及切割第二基板(30)以形成多个第二半导体发光元件。多个外延单元包含多个第一外延单元(201)和多个第二外延单元(202)。每一第一外延单元(201)具有第一几何形状及第一面积，每一第二外延单元(202)具有第二几何形状及第二面积。第一几何形状与第二几何形状不相同或第一面积与第二面积不相同。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201380059691.6A 2012-11-12 2013-07-03 半导体发光元件及其制作方法 Active CN104798175B (zh)

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CN201710418059.6A CN107256860B (zh) 2012-11-12 2013-07-03 半导体发光元件及其制作方法
CN201380059691.6A CN104798175B (zh) 2012-11-12 2013-07-03 半导体发光元件及其制作方法

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CN201210451045.1A CN103811593B (zh) 2012-11-12 2012-11-12 半导体光电元件的制作方法
CN201210451045.1 2012-11-12
PCT/CN2013/078766 WO2014071745A1 (zh) 2012-11-12 2013-07-03 半导体发光元件及其制作方法
CN201380059691.6A CN104798175B (zh) 2012-11-12 2013-07-03 半导体发光元件及其制作方法

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CN201710418059.6A Active CN107256860B (zh) 2012-11-12 2013-07-03 半导体发光元件及其制作方法
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